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Gwan Yeong Jung

Publications and source records attributed to Gwan Yeong Jung.

12 recordsLinked to original sources

Activating Basal Planes in Transition Metal Dichalcogenides for CO2 Reduction to CO through Alloying

Transition metal dichalcogenides (TMDCs) have emerged as highly tunable platforms for electrocatalysis, particularly for the CO2 reduction reaction (CO2RR). While TMDC edge sites exhibit catalytic activity, the basal plane is typically inert, severely limiting the overall active site density. In this work, we show that sulfur vacancies activate the basal plane of 1H-TMDCs, while concurrent solid-solution alloying provides a mechanism to broadly tune intermediate adsorption energies. We evaluate a library of quasi-binary TMDC sulfide alloys comprising V, Nb, Ta, Mo, and W, screening them by stability, defect energetics, and competitive selectivity to identify the most effective catalysts for CO2RR. Electronic-structure analysis reveals that a d-band center closer to the Fermi energy weakens intermediate binding by leaving key bonding states unoccupied above the Fermi energy. Our calculations identify (Nb,Ta)S2 as a promising catalyst with low sulfur vacancy formation energies, near-optimal CO2RR intermediate binding, and selectivity against the hydrogen evolution reaction. Overall, this work establishes a rational design framework for TMDC alloy catalysts through the simultaneous use of defect engineering and alloying.

cond-mat.mtrl-sci↗

Twist-induced Out-of-plane Ferroelectricity in Bilayer Hafnia

Ferroelectric HfO2 is a promising candidate for next-generation memory devices due to its CMOS compatibility and ability to retain polarization at nanometer scales. However, the polar orthorhombic phase (Pca2_1) responsible for ferroelectricity is metastable and requires extrinsic stabilization, which makes it challenging for integration with silicon. We predict that bilayer 1T-HfO2 can exhibit robust and switchable out-of-plane (OOP) polarization arising from stacking-induced symmetry breaking. Using first-principles density functional theory, we predict that monolayer 1T-HfO2 can be cleaved from the (111) surface of cubic hafnia, and the monolayer is dynamically stable. When two aligned monolayers are twisted to form a moiré superlattice, it breaks the interlayer symmetry and allows the emergence of bistable OOP polarization. At a twist angle of 7.34o, the system exhibits a net polarization of ~16 μC/cm2. This sizeable polarization is due to the large polar displacements concentrated in AB stacking domains. Importantly, this polarization can be reversibly switched via interlayer sliding with a low energy barrier (~8 meV/formula unit) and comparable low coercive field (~0.2 V/nm), offering electric-field tunability. These findings establish twisted bilayer 1T-HfO2 as a scalable and robust 2D ferroelectric platform, enabling new pathways for integrating ferroelectric functionality into atomically thin memory and logic devices.

cond-mat.mtrl-sci↗

Hole-doping reduces the coercive field in ferroelectric hafnia

Ferroelectric hafnia (HfO2) holds promise for next-generation memory and logic applications because of its CMOS compatibility. However, the high coercive field required for polarization switching in HfO2 remains a critical challenge for efficient device operations. Using first-principles calculations and phenomenological modeling, we predict that hole doping can reduce the coercive field from 8 MV/cm in undoped hafnia to 6 MV/cm in hafnia doped with 0.2 holes per formula unit (f.u.). In the absence of doping, the reversal of polarization of the Pca21 phase is preferred through the non-polar, tetragonal P42/nmc phase. This switching pathway involves the coupling of three hard distortion modes that render undoped hafnia as an improper ferroelectric. The overall energy barrier through this pathway remains unchanged (80 meV/f.u.) upon hole doping. However, the introduction of holes hardens the polar distortion mode that connects the polar Pca21 phase to the non polar, orthorhombic Pbcm phase, and reduces the energy barrier from 180 meV/f.u. in undoped hafnia to 80 meV/f.u. at 0.2 holes/f.u.. The activation of the latter switching pathway through the Pbcm phase can lead to a reversal in the polarization direction. Overall, hole doping makes the switching pathway through the Pbcm phase competitive, and renders hafnia as a proper ferroelectric with a lower coercive field.

cond-mat.mtrl-sci↗

Design Rules and Discovery of Face-Sharing Hexagonal Perovskites

Hexagonal perovskites with face-sharing octahedral connectivity are an underexplored class of materials. We propose quantitative design principles for stabilizing face-sharing ABX3 hexagonal perovskites based on a comparative analysis of oxides and sulfides. By mapping structural preferences across a phase-space defined by an electronegativity-corrected tolerance factor and the Shannon radius of the A-site cations, we identify distinct thresholds that separate hexagonal phases from competing cubic polymorphs having corner-sharing octahedral connectivity. Our analysis reveals that sulfides differ significantly from oxides due to the increased covalency of the transition metal-sulfur bonds, which enables broader compositional flexibility. Applying these principles, we predict a set of thermodynamically formable ABO3 and ABS3 compounds that are likely to adopt face-sharing octahedral connectivity. These findings establish a predictive framework for designing hexagonal perovskites, highlighting sulfides as promising candidates for obtaining quasi-one-dimensional materials having transition-metal cations for novel ferroic phenomena.

cond-mat.mtrl-sci↗

Sub-nm2 ferroelectric domains via charged 180 degree walls in ZrO2

Flat phonon bands in fluorite ferroelectrics (HfO2 or ZrO2) shrink polar domains laterally to an irreducible half-unit-cell width (0.27 nm) within which the vertical arrangement of dipoles is expected to remain uniform. We report on the direct observation of nonuniform and nearly discrete vertical arrangements of dipoles in ZrO2 thin films consisting of closely spaced head-to-head (HH) and tail-to-tail (TT) charged 180 degree walls, each exhibiting a distinct bulk-like structure. These charged domain walls (CDWs) further compress the irreducibly narrow, laterally stacked domains vertically to a thickness of 1-2.75 nm, yielding in-plane domains with sub-nm2 footprints-among the smallest ever reported for any ferroelectric material. The HH and TT walls form due to their flat longitudinal optical (LO) polar bands and are electrostatically stabilized by bound-charge compensation via interstitial oxygen atoms, which act as natural structural defects at the HH walls. Moreover, these walls are predicted to be conducting and to exhibit ultralow propagation barriers, with HH walls (1.6 meV) being far more mobile than TT walls (22.3 meV), indicating strong potential for low-voltage, domain-wall-based nanoelectronics.

cond-mat.mtrl-sci↗

Emergent Atomic Scale Polarisation Vortices in BaTiS3

Topological defects, such as vortices and skyrmions in magnetic and dipolar systems, can give rise to properties that are not observed in typical magnets and dielectrics. Here, we report the discovery of long-range ordered periodic dipole arrays of atomic-scale vortices and antivortices in the unconventional charge-density-wave (CDW) phase of BaTiS3, a quasi-1D chalcogenide. Synchrotron X-ray diffraction (XRD) reveals the presence of a multi-q ordering in BaTiS3 that confines vortex-vortex-antivortex polarisation triplets to the a-b plane with alternating handedness along the c-axis. The multi-q displacive distortions are characterised by three distinctive off-centre TiS6 configurations, whose ratios are independently confirmed by 47/49Ti solid-state nuclear magnetic resonance (SSNMR). Using first-principles calculations and phenomenological modelling, we show that the dipolar vortex unit cell in BaTiS3 arises from the coupling between multiple lattice instabilities arising from flat, soft phonon bands. This mechanism contrasts with classical dipolar textures in ferroelectric heterostructures that emerge from the competition between electrostatic and strain energies. The observation of dipolar vortices in BaTiS3 brings the ultimate scaling limit for real-space dipolar topological structures down to about a nanometre and unveils the intimate connection between crystal symmetry and real-space topology. Our work sets up zero-filling semiconducting materials with competing structural instabilities as a playground for realising and understanding quantum polarisation topologies.

cond-mat.mtrl-sci↗

Design Principles and Identification of Birefringent Materials

Birefringence ($Δn$) is the dependence of the refractive index of a material on the polarization of light travelling through it. Birefringent materials are used as polarizers, waveplates, and for novel light-matter coupling. While several birefringent materials exist, only a handful of them show large $Δn$ > 0.3, and are primarily limited to the infrared region. The variation of $Δn$ across diverse materials classes and strategies to achieve highly birefringent materials with transparency covering different regions of the electromagnetic spectrum are missing. We have calculated the $Δn$ of 967 non-cubic, formable crystals having vastly different structures, polyhedral connectivity and chemical compositions. From this set of compounds, we have screened highly birefringent crystals ($Δn$ greater than 0.3) having transparency in different regions of the electromagnetic spectrum. The screened compounds belong to several families such as A3'MN3, AMO2, AN3, and A'N6 (A = Li, Na, K; A'= Ca, Sr, Ba; M = V, Nb, Ta). By analyzing the electronic structures of these compounds, we have distilled rules to enable the design of crystals with large $Δn$.

cond-mat.mtrl-sci↗

Towards Atomic-Scale Control over Structural Modulations in Quasi-1D Chalcogenides for Colossal Optical Anisotropy

Optically anisotropic materials are sought after for tailoring the polarization of light. Recently, colossal optical anisotropy was reported in a quasi-one-dimensional chalcogenide, Sr1.125TiS3. Compared to SrTiS3, the excess Sr in Sr1.125TiS3 leads to periodic structural modulations and introduces additional electrons that undergo charge ordering on select Ti atoms to form a highly polarizable cloud oriented along the c-axis, hence, resulting in the colossolal optical anisotropy. Here, further enhancement of the colossal optical anisotropy to 2.5 in Sr1.143TiS3 is reported through control over the periodicity of the atomic-scale modulations. The role of structural modulations in tuning the optical properties in a series of SrxTiS3 compounds has been investigated using DFT calculations. The structural modulations arise from various stacking sequences of face-sharing TiS6 octahedra and twist-distorted trigonal prisms, and are found to be thermodynamically stable for x larger than 1 but smaller than 1.5. As x increases, an indirect-to-direct band gap transition is predicted for x equal to and larger than 1.143 along with an increased occupancy of Ti-dz2 states. Together, these two factors result in a theoretically predicted maximum birefriengence of 2.5 for Sr1.143TiS3. Single crystals of Sr1.143TiS3 were grown using a molten-salt flux method. Atomic-scale observations using scanning transmission electron microscopy confirm the feasibility of synthesizing SrxTiS3 with varied modulation periodicities. Overall, these findings demonstrate compositonal tunability of optical properties in SrxTiS3 compounds, and potentially in other hexagonal perovskites having structural modulations.

cond-mat.mtrl-sci↗

Strain-driven stabilization of a room-temperature chiral multiferroic with coupled ferroaxial and ferroelectric order

Noncollinear ferroic materials are sought after as testbeds to explore the intimate connections between topology and symmetry, which result in electronic, optical and magnetic functionalities not observed in collinear ferroic materials. For example, ferroaxial materials have ordered rotational structural distortions that break mirror symmetry and induce chirality. When ferroaxial order is coupled with ferroelectricity arising from a broken inversion symmetry, it offers the prospect of electric-field-control of the ferroaxial distortions and opens up new tunable functionalities. However, chiral multiferroics, especially ones stable at room temperature, are rare. We report the discovery of a strain-stabilized, room-temperature chiral multiferroic phase in single crystals of BaTiS$_3$, a quasi-one-dimensional (1D) hexagonal chalcogenide. Using first-principles calculations, we predict the stabilization of this multiferroic phase having $P6_3$ space group for biaxial tensile strains exceeding 1.5% applied on the basal ab-plane of the room temperature $P6_3cm$ phase of BaTiS$_3$. The chiral multiferroic phase is characterized by rotational distortions of select TiS$_6$ octahedra around the long $c$-axis and polar displacement of Ti atoms along the $c$-axis. We used an innovative approach using focused ion beam milling to make appropriately strained samples of BaTiS$_3$. The ferroaxial and ferroelectric distortions, and their domains in $P6_3$-BaTiS$_3$ were directly resolved using atomic resolution scanning transmission electron microscopy. Landau-based phenomenological modeling predicts a strong coupling between the ferroelectric and the ferroaxial order making $P6_3$-BaTiS$_3$ an attractive test bed for achieving electric-field control of chirality-related phenomena such as circular photo-galvanic current and the Rashba effect.

cond-mat.mtrl-sci↗

Colossal optical anisotropy from atomic-scale modulations

In modern optics, materials with large birefringence (Δn, where n is the refractive index) are sought after for polarization control (e.g. in wave plates, polarizing beam splitters, etc.), nonlinear optics and quantum optics (e.g. for phase matching and production of entangled photons), micromanipulation, and as a platform for unconventional light-matter coupling, such as Dyakonov-like surface polaritons and hyperbolic phonon polaritons. Layered "van der Waals" materials, with strong intra-layer bonding and weak inter-layer bonding, can feature some of the largest optical anisotropy; however, their use in most optical systems is limited because their optic axis is out of the plane of the layers and the layers are weakly attached, making the anisotropy hard to access. Here, we demonstrate that a bulk crystal with subtle periodic modulations in its structure -- Sr9/8TiS3 -- is transparent and positive-uniaxial, with extraordinary index n_e = 4.5 and ordinary index n_o = 2.4 in the mid- to far-infrared. The excess Sr, compared to stoichiometric SrTiS3, results in the formation of TiS6 trigonal-prismatic units that break the infinite chains of face-shared TiS6 octahedra in SrTiS3 into periodic blocks of five TiS6 octahedral units. The additional electrons introduced by the excess Sr subsequently occupy the TiS6 octahedral blocks to form highly oriented and polarizable electron clouds, which selectively boost the extraordinary index n_e and result in record birefringence (Δn > 2.1 with low loss). The connection between subtle structural modulations and large changes in refractive index suggests new categories of anisotropic materials and also tunable optical materials with large refractive-index modulation and low optical losses.

physics.optics↗

Unconventional Charge-density-wave Order in a Dilute d-band Semiconductor

Electron-lattice coupling effects in low dimensional materials give rise to charge density wave (CDW) order and phase transitions. These phenomena are critical ingredients for superconductivity and predominantly occur in metallic model systems such as doped cuprates, transition metal dichalcogenides, and more recently, in Kagome lattice materials. However, CDW in semiconducting systems, specifically at the limit of low carrier concentration region, is uncommon. Here, we combine electrical transport, synchrotron X-ray diffraction and optical spectroscopy to discover CDW order in a quasi-one-dimensional (1D), dilute d-band semiconductor, BaTiS3, which suggests the existence of strong electron-phonon coupling. The CDW state further undergoes an unusual transition featuring a sharp increase in carrier mobility. Our work establishes BaTiS3 as a unique platform to study the CDW physics in the dilute filling limit to explore novel electronic phases.

cond-mat.mtrl-sci↗

Orientation Controlled Anisotropy in Single Crystals of Quasi-1D BaTiS3

Low-dimensional materials with chain-like (one-dimensional) or layered (twodimensional) structures are of significant interest due to their anisotropic electrical, optical, thermal properties. One material with chain-like structure, BaTiS3 (BTS), was recently shown to possess giant in-plane optical anisotropy and glass-like thermal conductivity. To understand the origin of these effects, it is necessary to fully characterize the optical, thermal, and electronic anisotropy of BTS. To this end, BTS crystals with different orientations (aand c-axis orientations) were grown by chemical vapor transport. X-ray absorption spectroscopy (XAS) was used to characterize the local structure and electronic anisotropy of BTS. Fourier transform infrared (FTIR) reflection/transmission spectra show a large inplane optical anisotropy in the a-oriented crystals, while the c-axis oriented crystals were nearly isotropic in-plane. BTS platelet crystals are promising uniaxial materials for IR optics with their optic axis parallel to the c-axis. The thermal conductivity measurements revealed a thermal anisotropy of ~4.5 between the c- and a-axis. Time-domain Brillouin scattering showed that the longitudinal sound speed along the two axes is nearly the same suggesting that the thermal anisotropy is a result of different phonon scattering rates.

cond-mat.mtrl-sci↗