arXiv subjects

Gwenael Atcheson

Publications and source records attributed to Gwenael Atcheson.

5 recordsLinked to original sources

arXiv2023

Quasi-static magnetization dynamics in a compensated ferrimagnetic half-metal -- Mn$_2$Ru$_x$Ga

Exploring anisotropy and diverse magnetization dynamics in specimens with vanishing magnetic moments presents a significant challenge using traditional magnetometry, as the low resolution of existing techniques hinders the ability to obtain accurate results. In this study, we delve deeper into the examination of magnetic anisotropy and quasi-static magnetization dynamics in \mrg\,(MRG) thin films, as an example of a compensated ferrimagnetic half-metal, by employing anomalous Hall effect measurements within a tetragonal crystal lattice system. Our research proposes an innovative approach to accurately determine the complete set of anisotropy constants of these MRG thin films. To achieve this, we perform anomalous Hall voltage curve fitting, using torque models under the macrospin approximation, which allow us to obtain out-of-plane anisotropy constants $K_1=4.0\times10^4$ J m$^{-3}$ ($K_1/M=0.655$\,T) and $K_2=2.54\times10^4$ J m$^{-3}$ ($K_2/M=0.416$\,T), along with a weaker in-plane anisotropy constant $K_3=3.48\times10^3$ J m$^{-3}$ ($K_3/M=0.057$\,T). By additionally employing first-order reversal curves (FORC) and classical Preisach hysteresis (hysterons) models, we are able to validate the efficacy of the macrospin model in capturing the magnetic behavior of MRG thin films. Furthermore, our investigation substantiates that the complex quasi-static magnetization dynamics of MRG thin films can be effectively modelled using a combination of hysteronic and torque models. This approach facilitates the exploration of both linear and non-linear quasi-static magnetization dynamics, in the presence of external magnetic field and/or current-induced effective fields, generated by the spin-orbit torque and spin transfer torque mechanisms.

cond-mat.mtrl-sci↗

arXiv2021

Single-pulse all-optical switching in amorphous Dy$_x$Co$_{1-x}\text{ }$ and Tb$_x$Co$_{1-x}$

Repeated uniform switching of the magnetization of thin films of ferrimagnetic amorphous Gd$_{x}$(FeCo)$_{1-x}$ in response to single fast laser pulses is well established. Here we report unusual toggle switching in thin films of sperimagnetic amorphous Dy$_x$Co$_{1-x}$ and Tb$_x$Co$_{1-x}$ with $\it{x} \simeq$ 0.25 irradiated with single 200 fs pulses of 800 nm laser light. The samples have strong local random anisotropy due to the non-S state rare earth. The compensation temperature of the films is $\le$ 180 K and their Curie temperature is $\simeq$ 500 K. They are mostly switched by the first pulse, and subsequent pulses lead to partial re-switching of a decreasing amount of the irradiated area, with a granular structure of submicron regions of switched and unswitched material. Individual switched domains about 700 nm in size are observed around the edge of the irradiated spots where the fluence is at the threshold for switching. Results are discussed in terms of a random anisotropy model where the ratio of local anisotropy to exchange is temperature dependent and close to the threshold for strong pinning.

cond-mat.mtrl-sci↗

arXiv2021

Stability of Mn2RuxGa-based Multilayer Stacks

Perpendicular heterostructures based on a ferrimagnetic Mn2RuxGa (MRG) layer and a ferromagnetic Co/Pt multilayer were examined to understand the effects of different spacer layers (V, Mo, Hf, HfOx and TiN) on the interfaces with the magnetic electrodes, after annealing at 350 C. Loss of perpendicular anisotropy in MRG is strongly correlated with a reduction in the substrate-induced tetragonality due to relaxation of the crystal structure. In the absence of diffusion, strain and chemical ordering within MRG are correlated. The limited solubility of both Hf and Mo in MRG is a source of additional valence electrons, which results in an increase in compensation temperature Tcomp. This also stabilises perpendicular anisotropy, compensating for changes in strain and defect density. The reduction in squareness of the MRG hysteresis loop measured by anomalous Hall effect is <10 %, making it useful in active devices. Furthermore, a CoPt3 phase with (2 2 0) texture in the perpendicular Co/Pt free layer promoted by a Mo spacer layer is the only one that retains its perpendicular anisotropy on annealing.

cond-mat.mtrl-sci↗

arXiv2020

Magnetic reversal and pinning in a perpendicular zero moment half-metal

Compensated ferrimagnets are promising materials for fast spintronic applications based on domain wall motion as they combine the favourable properties of ferromagnets and antiferromagnets. They inherit from antiferromagnets immunity to external fields, fast spin dynamics and rapid domain wall motion. From ferromagnets they inherit straightforward ways to read out the magnetic state, especially in compensated half metals, where electrons flow in only one spin channel. Here, we investigate domain structure in compensated half-metallic Mn2Ru0.5Ga films and assess their potential in domain wall motion-based spin-electronic devices. Our focus is on understanding and reducing domain wall pinning in unpatterned epitaxial thin films. Two modes of magnetic reversal, driven by nucleation or domain wall motion, are identified for different thin film deposition temperatures $(T_{dep})$. The magnetic aftereffect is analysed to extract activation volumes $(V^*)$, activation energies $(E_A)$, and their variation $(ΔE_A)$. The latter is decisive for the magnetic reversal regime, where domain wall motion dominated reversal (weak pinning) is found for $ΔE_A<0.2$ eV and nucleation dominated reversal (strong pinning) for $ΔE_A>0.5$ eV. A minimum $ΔE_A=28$ meV is found for $T_{dep}=290°$C. Prominent pinning sites are visualized by analysing virgin domain patterns after thermal demagnetization. In the sample investigated they have spacings of order 300 nm, which gives an upper limit of the track-width of spin-torque domain-wall motion-based devices.

cond-mat.mtrl-sci↗

arXiv2018

Magnetocrystalline anisotropy and exchange probed by high-field anomalous Hall effect in fully-compensated half-metallic Mn2RuxGa thin films

Magnetotransport is investigated in thin films of the half-metallic ferrimagnet Mn$_2$Ru$_x$Ga in pulsed magnetic fields of up to 58 T. A non-vanishing Hall signal is observed over a broad temperature range, spanning the compensation temperature 155 K, where the net magnetic moment is strictly zero, the anomalous Hall conductivity is 6673 $Ω^{-1}.m^{-1}$ and the coercivity exceeds 9 T. Molecular field modelling is used to determine the intra- and inter-sublattice exchange constants and from the spin-flop transition we infer the anisotropy of the electrically active sublattice to be 216 kJ/m$^3$ and predict the magnetic resonances frequencies. Exchange and anisotropy are comparable and hard-axis applied magnetic fields result in a tilting of the magnetic moments from their collinear ground state. Our analysis is applicable to collinear ferrimagnetic half-metal systems.

cond-mat.mtrl-sci↗