arXiv subjects

Gyanendra Panchal

Publications and source records attributed to Gyanendra Panchal.

5 recordsLinked to original sources

arXiv2026

Designing dislocation-driven polar vortex networks in twisted perovskites

Twisting two atomic layers produces a geometric moire pattern, but bonding-induced interfacial reconstruction fundamentally transforms this into an ordered dislocation network - a distinction obscured in weakly-bonded van der Waals systems. Although in-plane topological vortex nanostructures arising from twisting-induced lateral strain modulation have been linked to periodic moire patterns in freestanding perovskite layers and 2D bilayers, their coupling to the interfacial dislocation network in twisted layers remains unresolved. Here we demonstrate that twisting freestanding SrTiO3 layers undergo interfacial reconstruction into a network of screw dislocations, accompanied by the emergence of in-plane topological vortices. Unlike in previous reports, these vortices are associated with the periodicity of the dislocation network rather than with geometric moire patterns. Four-dimensional scanning transmission electron microscopy (4D-STEM) reveals long-range ordered vortex-antivortex arrays with nearly continuous polarisation rotation. A machine-learning interatomic potential, trained on first-principles calculations, together with phase-field modelling, confirms that competing strains within the dislocation network stabilize polar vortex-antivortex pairs and drive the emergence of an electronic superlattice with a well-defined periodicity. Our results establish twist-controlled dislocation networks as a new and versatile route to designing local polar and electronic structures in oxide materials.

cond-mat.mtrl-sci↗

arXiv2022

Light-induced giant and persistent changes in the converse magnetoelastic effects in Ni/BaTiO3 multiferroic heterostructure

Magnetoelastic and magnetoelectric coupling in the artificial multiferroic heterostructures facilitate valuable features for device applications such as magnetic field sensors and electric write magnetic-read memory devices. In a ferromagnetic/ferroelectric heterostructures, the strain mediated coupling exploits piezoelectricity/electrostriction in ferroelectric phase and magnetostriction/piezomagnetism in ferromagnetic phase. Such verity of these combined effect can be manipulated by an external perturbation, such as electric field, temperature or magnetic field. Here, we demonstrate the remote-controlled tunability of these effects under the visible, coherent and polarized light. The combined surface and bulk magnetic study of domain-correlated Ni/BaTiO3 heterostructure reveals that the system is strong sensitive about the light illumination via the combined effect of converse piezoelectric, magnetoelastic coupling and converse magnetostriction. Well-defined ferroelastic domain structure is fully transferred from a tetragonal ferroelectric to magnetostrictive layer via interface strain transfer during the film growth. The visible light illumination is used to manipulate the original ferromagnetic microstructure by the light-induced domain wall motion in ferroelectric, consequently the domain wall motion in the ferromagnetic layer. Our findings mimic the attractive remote-controlled ferroelectric random-access memory write and magnetic random-access memory read application scenarios, hence, can be proven as a novel perspective for room temperature device applications.

cond-mat.mtrl-sci↗

arXiv2022

Strain and electric field control of magnetic and electrical transport properties in a magneto-elastically coupled Fe3O4/BaTiO3(001) heterostructure

We present a study of the control of electric field induced strain on the magnetic and electrical transport properties in a magneto-elastically coupled artificial multiferroic Fe3O4/BaTiO3 heterostructure. In this Fe3O4/BaTiO3 heterostructure, the Fe3O4 thin film is epitaxially grown in the form of bilateral domains, analogous to a-c stripe domains of the underlying BaTiO3(001) substrate. By in-situ electric field dependent magnetization measurements, we demonstrate the extrinsic control of the magnetic anisotropy and the characteristic Verwey metal-insulator transition of the epitaxial Fe3O4 thin film in a wide temperature range between 20-300 K, via strain mediated converse magnetoelectric coupling. In addition, we observe strain induced modulations in the magnetic and electrical transport properties of the Fe3O4 thin film across the thermally driven intrinsic ferroelectric and structural phase transitions of the BaTiO3 substrate. In-situ electric field dependent Raman measurements reveal that the electric field does not significantly modify the anti-phase boundary defects in the Fe3O4 thin film once it is thermodynamically stable after deposition and that the modification of the magnetic properties is mainly caused by strain induced lattice distortions and magnetic anisotropy. These results provide a framework to realize electrical control of the magnetization in a classical highly correlated transition metal oxide.

cond-mat.mtrl-sci↗

arXiv2020

Synthesis and characterization of vertically aligned La0.7Sr0.3MnO3:NiO nanocomposite thin films for spintronic applications

The microstructures and interfaces of two-phase vertically aligned nanocomposite (VAN) thin films play a key role in the design of spintronic device architectures and their multifunctional properties. Here, we show how the microstructures in self-assembled VAN thin films of La0.7Sr0.3MnO3:NiO (LSMO:NiO) can be effectively tuned from nano-granular to nano-columnar, and to nano-maze by controlling the number of laser shots from the two constituent phase targets in the pulsed laser deposition (PLD) film growth. The observed microstructural induced strain is found to significantly enhance the magnetoresistance in a very broad temperature range between 10-240 K and to modulate the in-plane exchange bias (EB), with the largest EB value observed in the maximally strained heterostructures. Most interestingly, a unique perpendicular exchange bias (PEB) effect is also observed for these heterostructures with an enhanced PEB field of up to 230 Oe. X-ray magnetic circular dichroism and training effect measurements demonstrate that the observed EB is disorder-induced and arises due to the pinning of NiO uncompensated moments at the disordered interface which is ferromagnetically coupled with LSMO. Furthermore, systematic changes in the electronic structure across the vertical interface related to a variation of the Mn3+/Mn4+ content arise as a consequence of out-of-plane tensile strain.

cond-mat.str-el↗

arXiv2018

Interfacial spin glass mediated unusual spontaneous exchange bias effect in epitaxial self-assembled La0.7Sr0.3MnO3:NiO nanocomposite thin films

Zero field cooled spontaneous exchange bias (SEB) is observed in epitaxial La0.7Sr0.3MnO3 (LSMO):NiO self-assembled nanocomposite thin films grown on (001) SrTiO3 single crystal substrate by pulsed laser deposition. SEB is displayed by the novel asymmetry in the hysteresis loop of the composite film along with the field cooled conventional exchange bias (CEB) effect. The training effect shows that exchange bias relaxation is disorder mediated. It is revealed from DC magnetization results that such nanocomposite film divulges spin glass like behaviour, which is arising due to competing ferromagnetic and antiferromagnetic inteactions at the assorted interfaces of ferromagnetic LSMO and antiferromagnetic NiO. Also corroborated by x-ray magnetic circular dichroism (XMCD) measurements, we conclude that SEB is mainly originating due to ferromagnetic coupling of unstable interfacial antiferromagnetic spin due to NiO with the ferromagnetic LSMO at the disordered interface. These results of self-assembled thin films provide a useful input to realize and understand microscopic origin of SEB for device application.

cond-mat.mtrl-sci↗