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Héctor González-Herrero

Publications and source records attributed to Héctor González-Herrero.

4 recordsLinked to original sources

Disorder-induced symmetry breaking in moiré bands of marginally twisted bilayer MoS$_2$

Twisted transition-metal dichalcogenides host highly tunable moiré potentials, flat bands, and correlated electronic phases, yet the role of disorder in shaping these emergent properties remains largely unresolved. Using scanning tunneling spectroscopy, we investigate the impact of electrostatic disorder on the electronic structure of marginally twisted ($θ\approx 0.95^\circ$) bilayer MoS$_2$. Differences of 15 meV in the onset energies of the valence and conduction bands between MX- and XM-stacked regions are observed and are unexpected based on symmetry considerations. We further observe spatially correlated disorder in the band onset energy that is consistent with a background random charge density of a few $10^{11}\,\mathrm{cm}^{-2}$. Continuum model calculations for twisted MoS$_2$ reveal dramatic changes in the low-energy moiré bands in response to an electric displacement field, in quantitative agreement with experiment. Moreover, the calculated local density of states including disorder broadening reproduces the experimental observations only when structural relaxation is taken into account. These results highlight the critical role of electrostatic disorder in determining the electronic structure of moiré materials at the nanoscale.

cond-mat.mtrl-sci↗

Atomically sharp 1D interfaces in 2D lateral heterostructures of VSe$_2$-NbSe$_2$ monolayers

Van der Waals heterostructures have emerged as an ideal platform for creating engineered artificial electronic states. While vertical heterostructures have been extensively studied, realizing high-quality lateral heterostructures with atomically sharp interfaces remains a major experimental challenge. Here, we advance a one-pot two-step molecular beam lateral epitaxy approach and successfully synthesize atomically well-defined 1T-VSe$_2$ -- 1H-NbSe$_2$ lateral heterostructures. We demonstrate the formation of defect-free lateral heterostructures and characterize their electronic structure using scanning tunnelling microscopy and spectroscopy together with density functional theory calculations. We find additional electronic states at the one-dimensional interface as well as signatures of Kondo resonances in a side-coupled geometry. Our experiments explore the full potential of lateral heterostructures for realizing exotic electronic states in low-dimensional systems for further studies of artificial designer quantum materials.

cond-mat.mes-hall↗

Atomic-scale visualization of multiferroicity in monolayer NiI$_2$

Progress in layered van der Waals materials has resulted in the discovery of ferromagnetic and ferroelectric materials down to the monolayer limit. Recently, evidence of the first purely two-dimensional multiferroic material was reported in monolayer NiI$_2$. However, probing multiferroicity with scattering-based and optical bulk techniques is challenging on 2D materials, and experiments on the atomic scale are needed to fully characterize the multiferroic order at the monolayer limit. Here, we use scanning tunneling microscopy (STM) supported by theoretical calculations based on density functional theory (DFT) to probe and characterize the multiferroic order in monolayer NiI$_2$. We demonstrate that the type-II multiferroic order displayed by NiI$_2$, arising from the combination of a magnetic spin spiral order and a strong spin-orbit coupling, allows probing the multiferroic order in the STM experiments. Moreover, we directly probe the magnetoelectric coupling of NiI$_2$ by external electric field manipulation of the multiferroic domains. Our findings establish a novel point of view to analyse magnetoelectric effects at the microscopic level, paving the way towards engineering new multiferroic orders in van der Waals materials and their heterostructures.

cond-mat.mtrl-sci↗

Atomic scale control and visualization of topological quantum phase transition in π-conjugated polymers driven by their length

Quantum phase transitions, which are driven by quantum fluctuations, mark a frontier between distinct quantum phases of matter. However, our understanding and control of such phenomena is still limited. Here we report an atomic scale control of quantum phase transition between two different topological quantum classes of a well-defined π-conjugated polymer controlled by their length. We reveal that a pseudo Jahn-Teller effect is the driving mechanism of the phase transition, being activated above a certain polymer chain length. In addition, our theoretical calculations indicate the presence of long-time coherent fluctuations at finite temperature between the two quantum phases of the polymer near the phase transition. This work may pave new ways to achieve atomic scale control of quantum phase transitions, in particular in organic matter.

cond-mat.mes-hall↗