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Hüseyin Çelik

Publications and source records attributed to Hüseyin Çelik.

2 recordsLinked to original sources

Platform and Framework for Time-Resolved Nanoscale Thermal Transport Measurements in STEM

Understanding heat transport at the nanometer scale is critical for semiconductor devices, quantum materials, and thermal management of nanostructures, yet direct local measurements of thermal conductivity and heat capacity remain scarce. We developed a laser-excitation system integrated into a scanning transmission electron microscope (STEM) for nanoscale thermal transport measurements using ultra-high-resolution electron energy-loss spectroscopy (EELS). A fiber-coupled laser is introduced via a modified aperture mechanism, enabling flexible holder geometries and large tilt angles without optical elements in the polepiece gap. Synchronization of pulsed laser excitation with an externally gated direct electron detector provides temporal resolution about 50 ns at <10 meV energy resolution. Local temperatures are determined via the principle of detailed balance, and thermal transport parameters are extracted by fitting a forward-time central-space heat diffusion model including radiative losses. For amorphous carbon films, we obtain a thermal conductivity of 1.24 $\frac{W}{m\cdot K}$ and a heat capacity of 821 $\frac{J}{kg\cdot K}$, consistent with literature. This framework enables time-resolved nanoscale measurements of thermal transport in materials and devices.

cond-mat.mtrl-sci↗

Imaging Localized Variable Capacitance During Switching Processes in Silicon Diodes by Time-Resolved Electron Holography

Interference Gating or iGate is a unique method for ultrafast time-resolved electron holography in a transmission electron microscope enabling a spatiotemporal resolution in the nm and ns regime with a minimal technological effort. Here, iGate is used for the first image-based investigation of the local dynamics of the projected electric potential in the area of the space charge region of two different general purpose silicon diodes during switching between unbiased and reverse biased condition with a temporal resolution of 25ns at a repetition rate of 3MHz. The obtained results for a focus-ion-beam-prepared ultrafast UG1A rectifier diode, which shows a decreasing capacitance with increasing reverse bias are in good agreement with an electric characterization of the macroscopic device as well as with theoretical expectations. For a severely modified 1N4007 device, however, time-resolved electron holography revealed a MOSCAP-like behavior with a rising capacitance in the area of the space charge region during the switching into reverse biased condition. Remarkably, a different behavior, dominated by the effective capacitance of the electrical setup, can be observed in the vacuum region outside both devices within the same measurements, clearly showing the benefits of localized dynamic potentiometry.

physics.app-ph↗