arXiv subjects

H. -G. Moser

Publications and source records attributed to H. -G. Moser.

4 recordsLinked to original sources

arXiv2014

Study of B^0 -> rho^0 rho^0 decays, implications for the CKM angle phi_2 and search for other B^0 decay modes with a four-pion final state

We present a study of the branching fraction of the decay B^0->rho0rho0 and the fraction of longitudinally polarized rho0 mesons in this decay. The results are obtained from the final data sample containing 772 million BBbar pairs collected at the Y(4S) resonance with the Belle detector at the KEKB asymmetric-energy e+e- collider. We find 166 +- 59 B^0 -> rho0 rho0 events (including systematic uncertainties), corresponding to a branching fraction of B(B^0->rho0rho0) = (1.02 +- 0.30 (stat) +- 0.15 (syst)) x 10^{-6} with a significance of 3.4 standard deviations and a longitudinal polarization fraction fL = 0.21^{+0.18}_{-0.22} (stat) +- 0.15 (syst). We use the longitudinal polarization fraction to determine the Cabibbo-Kobayashi-Maskawa matrix angle phi_2 = (84.9 +- 13.5) degrees through an isospin analysis in the B->rhorho system. We furthermore find 149 +- 49 B^0->f0rho0 events, corresponding to B(B^0->f0rho0) x B(f0->pi+pi-) = (0.78 +- 0.22 (stat) +- 0.11 (syst)) x 10^{-6}, with a significance of 3.1 standard deviations. We find no other significant contribution with the same final state, and set upper limits at 90% confidence level on the (product) branching fractions, B(B^0->pi+pi-pi+pi-)<11.2 x 10^{-6}, B(B^0->rho0pi+pi-)<12.0 x 10^{-6}, B(B^0->f0pi+pi-) x B(f0->pi+pi-) <3.0 x 10^{-6} and B(B^0->f0f0) x B(f0->pi+pi-)^{2} < 0.2 x 10^{-6}.

hep-ex↗

arXiv2013

Measurement of the CP Violation Parameters in B0 -> pi+ pi- Decays

We present a measurement of the time-dependent charge-parity (CP) violation parameters in B0 -> pi+ pi- decays. The results are obtained from the final data sample containing 772 million BBbar pairs collected at the Upsilon(4S) resonance with the Belle detector at the KEKB asymmetric-energy e+e- collider. We obtain the CP violation parameters Acp = +0.33 +/- 0.06 (stat) +/- 0.03 (syst) and Scp = -0.64 +/- 0.08 (stat) +/- 0.03 (syst), where Acp and Scp represent the direct and mixing-induced CP asymmetry, respectively. Using an isospin analysis including results from other Belle measurements, we find 23.8 < phi2 < 66.8 degrees is disfavored at the 1 sigma level, where phi2 is one of the three interior angles of the CKM unitarity triangle related to B_{u,d} decays.

hep-ex↗

arXiv2013

Development of active edge pixel sensors and four-side buttable modules using vertical integration technologies

We present an R&D activity focused on the development of novel modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The modules consist of n-in-p pixel sensors, 100 or 200 $μ$m thick, produced at VTT (Finland) with an active edge technology, which considerably reduces the dead area at the periphery of the device. The sensors are interconnected with solder bump-bonding to the ATLAS FE-I3 and FE-I4 read-out chips, and characterized with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements will be discussed for devices before and after irradiation up to a fluence of $5\times 10^{15}$ \neqcm. We will also report on the R&D activity to obtain Inter Chip Vias (ICVs) on the ATLAS read-out chip in collaboration with the Fraunhofer Institute EMFT. This step is meant to prove the feasibility of the signal transport to the newly created readout pads on the backside of the chips allowing for four side buttable devices without the presently used cantilever for wire bonding. The read-out chips with ICVs will be interconnected to thin pixel sensors, 75 $μ$m and 150 $μ$m thick, with the Solid Liquid Interdiffusion (SLID) technology, which is an alternative to the standard solder bump-bonding.

physics.ins-det↗

arXiv2011

Characterization of Thin Pixel Sensor Modules Interconnected with SLID Technology Irradiated to a Fluence of 2$\cdot 10^{15}$\,n$_{\mathrm{eq}}$/cm$^2$

A new module concept for future ATLAS pixel detector upgrades is presented, where thin n-in-p silicon sensors are connected to the front-end chip exploiting the novel Solid Liquid Interdiffusion technique (SLID) and the signals are read out via Inter Chip Vias (ICV) etched through the front-end. This should serve as a proof of principle for future four-side buttable pixel assemblies for the ATLAS upgrades, without the cantilever presently needed in the chip for the wire bonding. The SLID interconnection, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It is characterized by a very thin eutectic Cu-Sn alloy and allows for stacking of different layers of chips on top of the first one, without destroying the pre-existing bonds. This paves the way for vertical integration technologies. Results of the characterization of the first pixel modules interconnected through SLID as well as of one sample irradiated to $2\cdot10^{15}$\,\neqcm{} are discussed. Additionally, the etching of ICV into the front-end wafers was started. ICVs will be used to route the signals vertically through the front-end chip, to newly created pads on the backside. In the EMFT approach the chip wafer is thinned to (50--60)\,$μ$m.

physics.ins-det↗