arXiv subjects

H. -S. Goan

Publications and source records attributed to H. -S. Goan.

8 recordsLinked to original sources

arXiv2015

Quantum coherence in ultrastrong optomechanics

Ultrastrong light-matter interaction in an optomechanical system can result in nonlinear optical effects such as photon blockade. The system-bath couplings in such systems play an essential role in observing these effects. Here we study the quantum coherence of an optomechanical system with a dressed-state master equation approach. Our master equation includes photon-number-dependent terms that induce dephasing in this system. Cavity dephasing, second-order photon correlation, and two-cavity entanglement are studied with the dressed-state master equation.

quant-ph↗

arXiv2006

Spin-detection in a quantum electromechanical shuttle system

We study the electrical transport of a harmonically-bound, single-molecule endohedral fullerene shuttle operating in the Coulomb blockade regime, i.e. single electron shuttling. In particular we examine the dependance of the tunnel current on an ultra-small stationary force exerted on the shuttle. We derive a quantum master equation for the full shuttle system which includes the metallic contacts, the spatially dependent tunnel couplings to the shuttle, the electronic and motional degrees of freedom of the shuttle itself and a coupling of the shuttle's motion to a phonon bath. We analyse the resulting quantum master equation and find that, due to the exponential dependance of the tunnel probability on the shuttle-contact separation, the current is highly sensitive to very small forces. In particular we predict that the spin state of the endohedral electrons of the endohedral fullerene in a large magnetic gradient field can be distinguished from the resulting current signals within a few tens of nanoseconds. This effect could prove useful for the detection of the endohedral spin-state of individual paramagnetic molecules such as N@C60 and P@C60, or the detection of very small static forces acting on a molecular shuttle.

cond-mat.other↗

arXiv2005

Ion trap transducers for quantum electromechanical oscillators

An enduring challenge for contemporary physics is to experimentally observe and control quantum behavior in macroscopic systems. We show that a single trapped atomic ion could be used to probe the quantum nature of a mesoscopic mechanical oscillator precooled to 4K, and furthermore, to cool the oscillator with high efficiency to its quantum ground state. The proposed experiment could be performed using currently available technology.

quant-ph↗

arXiv2004

Global control and fast solid-state donor electron spin quantum computing

We propose a scheme for quantum information processing based on donor electron spins in semiconductors, with an architecture complementary to the original Kane proposal. We show that a naive implementation of electron spin qubits provides only modest improvement over the Kane scheme, however through the introduction of global gate control we are able to take full advantage of the fast electron evolution timescales. We estimate that the latent clock speed is 100-1000 times that of the nuclear spin quantum computer with the ratio $T_{2}/T_{ops}$ approaching the $10^{6}$ level.

quant-ph↗

arXiv2004

Parity measurement of one- and two-electron double well systems

We outline a scheme to accomplish measurements of a solid state double well system (DWS) with both one and two electrons in non-localised bases. We show that, for a single particle, measuring the local charge distribution at the midpoint of a DWS using an SET as a sensitive electrometer amounts to performing a projective measurement in the parity (symmetric/antisymmetric) eigenbasis. For two-electrons in a DWS, a similar configuration of SET results in close-to-projective measurement in the singlet/triplet basis. We analyse the sensitivity of the scheme to asymmetry in the SET position for some experimentally relevant parameter, and show that it is realisable in experiment.

cond-mat.mes-hall↗

arXiv2004

Voltage Control of Exchange Coupling in Phosphorus Doped Silicon

Motivated by applications to quantum computer architectures we study the change in the exchange interaction between neighbouring phosphorus donor electrons in silicon due to the application of voltage biases to surface control electrodes. These voltage biases create electro-static fields within the crystal substrate, perturbing the states of the donor electrons and thus altering the strength of the exchange interaction between them. We find that control gates of this kind can be used to either enhance, or reduce the strength of the interaction, by an amount that depends both on the magnitude and orientation of the donor separation.

cond-mat.mtrl-sci↗

arXiv2004

Effects of J-gate potential and interfaces on donor exchange coupling in the Kane quantum computer architecture

We calculate the electron exchange coupling for a phosphorus donor pair in silicon perturbed by a J-gate potential and the boundary effects of the silicon host geometry. In addition to the electron-electron exchange interaction we also calculate the contact hyperfine interaction between the donor nucleus and electron as a function of the varying experimental conditions. Donor separation, depth of the P nuclei below the silicon oxide layer and J-gate voltage become decisive factors in determining the strength of both the exchange coupling and the hyperfine interaction - both crucial components for qubit operations in the Kane quantum computer. These calculations were performed using an anisotropic effective-mass Hamiltonian approach. The behaviour of the donor exchange coupling as a function of the device parameters varied provides relevant information for the experimental design of these devices.

cond-mat.mtrl-sci↗

arXiv2003

Electron Exchange Coupling for Single Donor Solid-State Qubits

Inter-valley interference between degenerate conduction band minima has been shown to lead to oscillations in the exchange energy between neighbouring phosphorus donor electron states in silicon \cite{Koiller02,Koiller02A}. These same effects lead to an extreme sensitivity of the exchange energy on the relative orientation of the donor atoms, an issue of crucial importance in the construction silicon-based spin quantum computers. In this article we calculate the donor electron exchange coupling as a function of donor position incorporating the full Bloch structure of the Kohn-Luttinger electron wavefunctions. It is found that due to the rapidly oscillating nature of the terms they produce, the periodic part of the Bloch functions can be safely ignored in the Heitler-London integrals as was done by Koiller et. al. [Phys. Rev. Lett. 88,027903(2002),Phys. Rev. B. 66,115201(2002)], significantly reducing the complexity of calculations. We address issues of fabrication and calculate the expected exchange coupling between neighbouring donors that have been implanted into the silicon substrate using an 15keV ion beam in the so-called 'top down' fabrication scheme for a Kane solid-state quantum computer. In addition we calculate the exchange coupling as a function of the voltage bias on control gates used to manipulate the electron wavefunctions and implement quantum logic operations in the Kane proposal, and find that these gate biases can be used to both increase and decrease the magnitude of the exchange coupling between neighbouring donor electrons. The zero-bias results reconfirm those previously obtained by Koiller.

cond-mat↗