Microwave Loss in Low-Temperature ICPCVD Silicon Nitride: Dependence on Precursor Ratio and RF Substrate Bias
Low-loss dielectric films are an important component of superconducting circuits with applications ranging from quantum information to superconducting detectors for astrophysics. In millimeter-wave detector circuits, dielectric loss can be the limiting factor on efficiency and resonator performance. Some advantageous detector fabrication architectures require dielectric deposition at temperatures substantially lower than those conventionally used to achieve low dielectric loss. In this work, we characterize silicon nitride (SiN$_x$) films deposited by inductively coupled plasma chemical vapor deposition (ICPCVD) at $150\,^{\circ}\mathrm{C}$ for use in temperature-constrained superconducting detector fabrication. We measure the dielectric loss tangent of these films at $\sim 4-7$ GHz using superconducting niobium microstrip resonators and extract the loss by fitting the temperature-dependent resonant frequency to a two-level-system model. We vary the N$_2$/SiH$_4$ precursor-flow ratio between dielectric depositions and find a clear trend of decreasing loss with decreasing N$_2$/SiH$_4$. We additionally find that applying an RF substrate bias during deposition reduces the loss compared to films deposited without bias. These results identify precursor ratio and substrate bias as practical process parameters for improving low-temperature SiN$_x$ for superconducting detector circuits.