arXiv subjects

H. Aubin

Publications and source records attributed to H. Aubin.

At least 19 recordsLinked to original sources

arXiv2025

Evidence for atomic-scale vibron-mediated electron bunching

Due to the Coulomb blockade effect, electrons rarely bunch during transport, a phenomenon observed only in a few specially engineered mesoscopic configurations. In this work, we introduce an atomically resolved shot-noise study to demonstrate the possibility of electron bunching through vibrational coupling which takes place in an atomically sized nano-electro-mechanical system. Using tunnelling spectroscopy, we observe signatures of vibron-assisted tunnelling on an Fe impurity in Bi$_2$Se$_3$. Notably, simultaneous shot-noise measurements at the centre of the vibrating impurity reveal super-Poissonian noise. In the absence of alternative sources of super-Poissonian noise, this implies vibronic-coupling-induced bunching of electrons during the tunnelling process through the impurity, as theoretically predicted decades ago. As a future outlook, if coherence between electrons can be implemented, vibron-mediated electron bunching at single atomic sites may be exploited as a local injection source of $N$-paired electrons.

cond-mat.str-el↗

arXiv2025

Twist-Angle-Controlled Anomalous Gating in Bilayer Graphene/BN Heterostructures

Anomalous gating effects-such as gate ineffectiveness and pronounced hysteresis-have been observed in graphene-based systems encapsulated in boron nitride (BN) and linked to a possible ferroelectric state. However, their origin, stability, and reproducibility remain under debate. Here, we present charge transport experiments in dual-gated, dynamically rotatable van der Waals heterostructures based on bilayer graphene encapsulated in BN. Remarkably, the angular degree of freedom acts as an ON/OFF switch for the anomalous gating response. We show that the angular alignment between the two BN layers -- not the presence of a moir\'e superlattice with graphene -- is the key parameter governing these effects. The relevant alignment between the two BN layers, to observe the anomalous gating effect at room temperature, lies between 15 deg and 45 deg, with no evidence of the expected 60 deg periodicity. Both gate ineffectiveness and hysteresis are highly sensitive to small angular changes, which we classify into three distinct regimes. Our results clarify the conditions necessary to reproduce these phenomena and pave the way for theoretical investigation of their microscopic origins.

cond-mat.mes-hall↗

arXiv2022

Atomic scale visualization of the p-d hybridization in III-V semiconductors doped with transition metal impurities

p-d hybridization of transition metal impurities in a semiconductor host is the mechanism that couples valence-band electrons and localized spins. We use scanning tunneling microscopy and spectroscopy combined with density functional theory to probe at the atomic scale hybridization of Cr single impurities with GaAs host. Combining spatial density of states mapping and in-gap states spectroscopy of the Cr substituted at the surface of the semiconductor, we give a detailed picture of the spatial extension and the electronic structure of the strongly anisotropic wave function of Cr on GaAs(110). First principles calculations allow to identify electronic character and origin of each states and show that the main resonance peaks and the wave function with "drop-eyes" lobes experimentally observed for 3d metal impurities in III-V semiconductor are direct local evidences of the p-d hybridization.

cond-mat.mtrl-sci↗

arXiv2017

Double Fe-impurity charge state in the topological insulator Bi$_2$Se$_3$

The influence of individual impurities of Fe on the electronic properties of topological insulator Bi$_2$Se$_3$ is studied by Scanning Tunneling Microscopy. The microscope tip is used in order to remotely charge/discharge Fe impurities. The charging process is shown to depend on the impurity location in the crystallographic unit cell, on the presence of other Fe impurities in the close vicinity, as well as on the overall doping level of the crystal. We present a qualitative explanation of the observed phenomena in terms of tip-induced local band bending. Our observations evidence that the specific impurity neighborhood and the position of the Fermi energy with respect to the Dirac point and bulk bands have both to be taken into account when considering the electron scattering on the disorder in topological insulators.

cond-mat.mes-hall↗

arXiv2015

Effects of electron-phonon interactions on the electron tunneling spectrum of PbS quantum dots

We present a tunnel spectroscopy study of single PbS Quantum Dots (QDs) as function of temperature and gate voltage. Three distinct signatures of strong electron-phonon coupling are observed in the Electron Tunneling Spectrum (ETS) of these QDs. In the shell-filling regime, the $8\times$ degeneracy of the electronic levels is lifted by the Coulomb interactions and allows the observation of phonon sub-bands that result from the emission of optical phonons. At low bias, a gap is observed in the ETS that cannot be closed with the gate voltage, which is a distinguishing feature of the Franck-Condon (FC) blockade. From the data, a Huang-Rhys factor in the range $S\sim 1.7 - 2.5$ is obtained. Finally, in the shell tunneling regime, the optical phonons appear in the inelastic ETS $d^2I/dV^2$.

cond-mat.mes-hall↗

arXiv2014

Verwey transition in single magnetite nanoparticles

We present a tunnel spectroscopy study of the electronic spectrum of single magnetite \chemform{Fe_3O_4} nanoparticles trapped between nanometer-spaced electrodes. The Verwey transition is clearly identified in the current voltage-characteristics where we find that the transition temperature is electric field dependent. The data show the presence of localized states at high energy, $\varepsilon \sim 0.6eV$, which can be attributed to polaron states. At low energy, the density of states (DOS) is suppressed at the approach of the Verwey transition. Below the Verwey transition, a gap, $Δ\sim 300meV$, is observed in the spectrum. In contrast, no gap is observed in the high temperature phase, implying that electronic transport in this phase is possibly due to polaron hopping with activated mobility.

cond-mat.mes-hall↗

arXiv2012

Electric-field-driven phase transition in vanadium dioxide

We report on local probe measurements of current-voltage and electrostatic force-voltage characteristics of electric-field-induced insulator to metal transition in VO2 thin film. In conducting AFM mode, switching from the insulating to metallic state occurs for electric-field threshold E~6.5\times10^7 Vm-1 at 300K. Upon lifting the tip above the sample surface, we find that the transition can also be observed through a change in electrostatic force and in tunneling current. In this noncontact regime, the transition is characterized by random telegraphic noise. These results show that electric field alone is sufficient to induce the transition; however, the electronic current provides a positive feedback effect that amplifies the phenomena.

cond-mat.str-el↗

arXiv2011

Electron cotunneling transport in gold nanocrystal arrays

We describe current-voltage characteristics I(V) of alkyl-ligated gold nanocrystals $\sim 5 nm$ arrays in long screening length limit. Arrays with different alkyl ligand lengths have been prepared to tune the electronic tunnel coupling between the nanocrystals. For long ligands, electronic diffusion occurs through sequential tunneling and follows activated laws, as function of temperature $σ\propto e^{-T_0/T}$ and as function of electric field $I \propto e^{-\mathcal{E}_0/\mathcal{E}}$. For better conducting arrays, i.e. with small ligands, the transport properties crossover to the cotunneling regime and follows Efros-Shklovskii laws as function of temperature $σ\propto e^{-(T_{ES}/T)^{1/2}}$ and as function of electric field $I \propto e^{-(\mathcal{E}_{ES}/\mathcal{E})^{1/2}}$. The data shows that electronic transport in nanocrystal arrays can be tuned from the sequential tunneling to the cotunneling regime by increasing the tunnel barrier transparency.

cond-mat.str-el↗

arXiv2009

Nernst effect as a probe of superconducting fluctuations in disordered thin films

In amorphous superconducting thin films of $Nb_{0.15}Si_{0.85}$ and $InO_x$, a finite Nernst coefficient can be detected in a wide range of temperature and magnetic field. Due to the negligible contribution of normal quasi-particles, superconducting fluctuations easily dominate the Nernst response in the entire range of study. In the vicinity of the critical temperature and in the zero-field limit, the magnitude of the signal is in quantitative agreement with what is theoretically expected for the Gaussian fluctuations of the superconducting order parameter. Even at higher temperatures and finite magnetic field, the Nernst coefficient is set by the size of superconducting fluctuations. The Nernst coefficient emerges as a direct probe of the ghost critical field, the normal-state mirror of the upper critical field. Moreover, upon leaving the normal state with fluctuating Cooper pairs, we show that the temperature evolution of the Nernst coefficient is different whether the system enters a vortex solid, a vortex liquid or a phase-fluctuating superconducting regime.

cond-mat.supr-con↗

arXiv2008

Thickness-tuned Superconductor-to-Insulator Transitions under magnetic field in a-NbSi

We have studied the thickness-induced superconductor-to-insulator transition in the presence of a magnetic field for a-NbSi thin films. Analyzing the critical behavior of this system within the "dirty boson model", we have found a critical exponents product of $ν_d z$ > 0.4. The corresponding phase diagram in the (H,d) plane is inferred. This small exponent product as well as the non-universal value of the critical resistance found at the transition call for further investigations in order to thoroughly understand these transitions.

cond-mat.supr-con↗

arXiv2007

Nernst effect in the phase-fluctuating superconductor InO$_x$

We present a study of the Nernst effect in amorphous 2D superconductor InO$_x$, whose low carrier density implies low phase rigidity and strong superconducting phase fluctuations. Instead of presenting the abrupt jump expected at a BCS transition, the Nernst signal evolves continuously through the superconducting transition as previously observed in underdoped cuprates. This contrasts with the case of Nb$_{0.15}$Si$_{0.85}$, where the Nernst signal due to vortices below T$_{c}$ and by Gaussian fluctuations above are clearly distinct. The behavior of the ghost critical field in InO$_x$ points to a correlation length which does not diverge at $T_c$, a temperature below which the amplitude fluctuations freeze, but phase fluctuations survive.

cond-mat.supr-con↗

arXiv2007

A length scale for the superconducting Nernst signal above T$_{c}$ in Nb$_{0.15}$Si$_{0.85}$

We present a study of the Nernst effect in amorphous superconducting thin films of Nb$_{0.15}$Si$_{0.85}$. The field dependence of the Nernst coefficient above T$_{c}$ displays two distinct regimes separated by a field scale set by the Ginzburg-Landau correlation length. A single function $F(ξ)$, with the correlation length as its unique argument set either by the zero-field correlation length (in the low magnetic field limit) or by the magnetic length (in the opposite limit), describes the Nernst coefficient. We conclude that the Nernst signal observed on a wide temperature ($30 \times T_c$) and field ($4 \times B_{c2}$) range is exclusively generated by short-lived Cooper pairs.

cond-mat.supr-con↗

arXiv2006

Observation of the Nernst signal generated by fluctuating Cooper pairs

Long-range order is destroyed in a superconductor warmed above its critical temperature (Tc). However, amplitude fluctuations of the superconducting order parameter survive and lead to a number of well established phenomena such as paraconductivity : an excess of charge conductivity due to the presence of short-lived Cooper pairs in the normal state. According to an untested theory, these pairs generate a transverse thermoelectric (Nernst) signal. In amorphous superconducting films, the lifetime of Cooper pairs exceeds the elastic lifetime of quasi-particles in a wide temperature range above Tc; consequently, the Cooper pairs Nernst signal dominate the response of the normal electrons well above Tc. In two dimensions, the magnitude of the expected signal depends only on universal constants and the superconducting coherence length, so the theory can be unambiguously tested. Here, we report on the observation of a Nernst signal in such a superconductor traced deep into the normal state. Since the amplitude of this signal is in excellent agreement with the theoretical prediction, the result provides the first unambiguous case for a Nernst effect produced by short-lived Cooper pairs.

cond-mat.supr-con↗

arXiv2006

Magnetic field-induced quantum superconductor-insulator transition in $Nb_{0.15}Si_{0.85}$

A study of magnetic-field tuned superconductor-insulator transitions in amorphous $Nb_{0.15}Si_{0.85}$ thin films shows that quantum superconductor-insulator transitions are characterized by an unambiguous signature -- a kink in the temperature profile of the critical magnetic field. Using this criterion, we show that the nature of the magnetic-field tuned superconductor-insulator transition depends on the orientation of the field with respect to the film. For perpendicular magnetic field, the transition is controlled by quantum fluctuations with indications for the existence of a Bose insulator; while for parallel magnetic field, the transition is classical, driven by the breaking of Cooper pairs at the temperature dependent critical field $H_{c2}$.

cond-mat.supr-con↗

arXiv2005

Thermal transport in the hidden-order state of URu$_{2}$Si$_{2}$

We present a study of thermal conductivity in the normal state of the heavy-fermion superconductor URu$_{2}$Si$_{2}$. Ordering at 18K leads to a steep increase in thermal conductivity and (in contrast with all other cases of magnetic ordering in heavy-fermion compounds) to an enhancement of the Lorenz number. By linking this observation to several other previously reported features, we conclude that most of the carriers disappear in the ordered state and this leads to a drastic increase in both phononic and electronic mean-free-path.

cond-mat.str-el↗

arXiv1998

Evidence for field-induced excitations in low-temperature thermal conductivity of Bi_2Sr_2CaCu_2O_8

The thermal conductivity ,$κ$, of Bi_2Sr_2CaCu_2O_8 was studied as a function of magnetic field. Above 5 K, after an initial decrease, $κ(H)$ presents a kink followed by a plateau, as recently reported by Krishana et al.. By contrast, below 1K, the thermal conductivity was found to \emph{increase} with increasing field. This behavior is indicative of a finite density of states and is not compatible with the existence of a field-induced fully gapped $d_{x^{2}-y^{2}}+id_{xy}$ state which was recently proposed to describe the plateau regime. Our low-temperature results are in agreement with recent works predicting a field-induced enhancement of thermal conductivity by Doppler shift of quasi-particle spectrum.

cond-mat.supr-con↗

arXiv1997

Comment on ``Plateaus Observed in the Field profile of Thermal Conductivity in the Superconductor Bi_2Sr_2CaCu_2O_8''

We studied the thermal conductivity of a Bi_2Sr_2CaCu_2O_8 single crystal as a function of a magnetic field ramped up and down and then reversed. As recently discovered by Krishana et al., we observed a field-independent thermal conductivity above a threshold field. However, our measurements show that the magnitude of background thermal conductivity depends on the field profile in the sample. This is incompatible with the interpretation put forward by Krishana and co-workers.

cond-mat.supr-con↗

arXiv1996

Angular position of nodes in the superconducting gap of YBCO

The thermal conductivity of a YBCO single crystal has been studied as a function of the relative orientation of the crystal axes and a magnetic field rotating in the Cu-O planes. Measurements were carried out at several temperatures below T_c and at a fixed field of 30 kOe. A four-fold symmetry characteristic of a superconducting gap with nodes at odd multiples of 45 degrees in k-space was resolved. Experiments were performed to exclude a possible macroscopic origin for such a four-fold symmetry such as sample shape or anisotropic pinning. Our results impose an upper limit of 10% on the weight of the s-wave component of the essentially d-wave superconducting order parameter of YBCO.

cond-mat.supr-con↗