arXiv subjects

H. B. Weber

Publications and source records attributed to H. B. Weber.

14 recordsLinked to original sources

arXiv2025

Monolithic 4H-SiC nanomechanical resonators with high intrinsic quality factors

We present an extensive study of 4H-SiC nanomechanical resonators electrochemically etched out of a monocrystalline wafer. Combining piezo-driven interferometric determination of the mechanical spectra with scanning-laser-Doppler vibrometry, an unambiguous assignment of resonance peaks to flexural and torsional modes is achieved. The investigation of multiple harmonic eigenmodes of singly and doubly clamped resonators with varying geometry allows for a comprehensive characterization. Excellent intrinsic mechanical quality factors up to $2\times10^5$ are found at room temperature, approaching the thermoelastic limit at eigenfrquencies exceeding 10 MHz. Mechanical stress is essentially absent. Young's modulus in agreement with literature. These findings are robust under post-processing treatments, in particular atomic layer etching and high-temperature thermal annealing. The resulting on-chip high-quality mechanical resonators represent a valuable technological element for a broad range of applications. In particular, the monolithic architecture meets the requirements of spin-based photonic quantum technologies on the upcoming SiC platform.

cond-mat.mes-hall↗

arXiv2025

Quantum enhanced electric field mapping within semiconductor devices

Semiconductor components based on silicon carbide (SiC) are a key component for high-power electronics. Their behavior is determined by the interplay of charges and electric fields, which is typically described by modeling and simulations that are calibrated by nonlocal electric properties. So far, there are no experimental methods that allow for the 3D mapping of both the electric field and the concentrations of free charge carriers inside an electronic device. To fulfill this information gap, we propose an operando method that utilizes single silicon vacancy (VSi) centers in 4H-SiC. The VSi centers are at various positions in the intrinsic region of a pin-diode. To monitor the local static electric field, we perform Stark shift measurements based on photoluminescence excitation (PLE), which allows us to infer the expansion of the depletion zone and therefore to determine the local concentration of dopants. Besides this, we show that our measurements allow us to additionally obtain the local concentration of free charge carriers. The method presented here therefore paves the way for a new quantum-enhanced electronic device technology, capable of mapping the interplay of mobile charges and electric fields in a working semiconductor device with nanometer precision.

quant-ph↗

arXiv2014

Terahertz response of patterned epitaxial graphene

We study the interaction between polarized terahertz (THz) radiation and micro-structured large-area graphene in transmission geometry. In order to efficiently couple the radiation into the two-dimensional material, a lateral periodic patterning of a closed graphene sheet by intercalation doping into stripes is chosen, yielding unequal transmittance of the radiation polarized parallel and perpendicular to the stripes. Indeed, a polarization contrast up to 20% is observed. The effect even increases up to 50% when removing graphene stripes in analogy to a wire grid polarizer. The polarization dependence is analyzed in a large frequency range from < 80 GHz to 3 THz, including the plasmon-polariton resonance. The results are in excellent agreement with theoretical calculations based on the electronic energy spectrum of graphene and the electrodynamics of the patterned structure.

cond-mat.mes-hall↗

arXiv2014

Current Noise in Single-Molecule Junctions Induced by Electronic-Vibrational Coupling

The influence of multiple vibrational modes on current fluctuations in electron transport through single-molecule junctions is investigated. Our analysis is based on a generic model of a molecular junction, which comprises a single electronic state on the molecular bridge coupled to multiple vibrational modes and fermionic leads, and employs a master equation approach. The results reveal that in molecular junctions with multiple vibrational modes already weak to moderate electronic-vibrational coupling may result in high noise levels, especially at the onset of resonant transport, in accordance with experimental findings of Secker et al..[1] The underlying mechanisms are analyzed in some detail. [1] D. Secker et al., Phys. Rev. Lett. 106, 136807 (2011).

cond-mat.mes-hall↗

arXiv2013

Ultra-fast transistor-based detectors for precise timing of near infrared and THz signals

A whole class of two-color experiments involves intense, short Terahertz radiation pulses. A fast detector that is sensitive and able to resolve both near-infrared and Terahertz pulses at the same time is highly desirable. Here we present the first detector of this kind. The detector element is a GaAs-based field effect transistor operated at room temperature. THz detection is successfully demonstrated at frequencies up to 4.9 THz. The THz detection time constant is shorter than 30 ps, the optical time constant is 150 ps. This detector is ideally suited for precise, simultaneous resolution of optical and THz pulses and for pulse characterization of high-power THz pulses up to tens of kW peak power levels. The dynamic range of the detector was as large as 65 $\pm$ 3 dB/$\sqrt{Hz}$, enabling applications in a large variety of experiments and setups, also including table-top systems.

physics.optics↗

arXiv2011

The quasi-free-standing nature of graphene on H-saturated SiC(0001)

We report on an investigation of quasi-free-standing graphene on 6H-SiC(0001) which was prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption spectroscopy we prove that the SiC(0001) surface is saturated with hydrogen. Raman spectra demonstrate the conversion of the buffer layer into graphene which exhibits a slight tensile strain and short range defects. The layers are hole doped (p = 5.0-6.5 x 10^12 cm^(-2)) with a carrier mobility of 3,100 cm^2/Vs at room temperature. Compared to graphene on the buffer layer a strongly reduced temperature dependence of the mobility is observed for graphene on H-terminated SiC(0001)which justifies the term "quasi-free-standing".

cond-mat.mtrl-sci↗

arXiv2004

Evidence for crossed Andreev reflection in superconductor-ferromagnet hybrid structures

We have measured the non-local resistance of aluminum-iron spin-valve structures fabricated by e-beam lithography and shadow evaporation. The sample geometry consists of an aluminum bar with two or more ferromagnetic wires forming point contacts to the aluminum at varying distances from each other. In the normal state of aluminum, we observe a spin-valve signal which allows us to control the relative orientation of the magnetizations of the ferromagnetic contacts. In the superconducting state, at low temperatures and excitation voltages well below the gap, we observe a spin-dependent non-local resistance which decays on a smaller length scale than the normal-state spin-valve signal. The sign, magnitude and decay length of this signal is consistent with predictions made for crossed Andreev reflection (CAR).

cond-mat.mes-hall↗

arXiv2004

Dimensionality effects on non-equilibrium electronic transport in Cu nanobridges

We report on non-equilibrium electronic transport through normal-metal (Cu) nanobridges coupled to large reservoirs at low temperatures. We observe a logarithmic temperature dependence of the zero-bias conductance, as well as a universal scaling behavior of the differential conductance. Our results are explained by electron-electron interactions in diffusive metals in the zero-dimensional limit.

cond-mat.mes-hall↗

arXiv2002

Low-temperature Conductance Measurements On Single Molecules

An experimental protocol which allows to perform conductance spectroscopy on organic molecules at low temperatures (T~30 K) has been developed. This extends the method of mechanically controlled break junctions which has recently demonstrated to be suitable to contact single molecules at room temperature. The conductance data obtained at low T with a conjugated sample molecule show a highly improved data quality with a higher stability, narrower linewidth and substantially reduced noise. Thus the comparability of experimental data with other measurements as well as with theoretical simulations is considerably improved.

cond-mat.mes-hall↗

arXiv2002

Contacting single bundles of carbon nanotubes with alternating electric fields

Single bundles of carbon nanotubes have been selectively deposited from suspensions onto sub-micron electrodes with alternating electric fields. We explore the resulting contacts using several solvents and delineate the differences between Au and Ag as electrode materials. Alignment of the bundles between electrodes occurs at frequencies above 1 kHz. Control over the number of trapped bundles is achieved by choosing an electrode material which interacts strongly with the chemical functional groups of the carbon nanotubes, with superior contacts being formed with Ag electrodes.

cond-mat.mes-hall↗

arXiv2001

Driving current through single organic molecules

We investigate electronic transport through two types of conjugated molecules. Mechanically controlled break-junctions are used to couple thiol endgroups of single molecules to two gold electrodes. Current-voltage characteristics (IVs) of the metal-molecule-metal system are observed. These IVs reproduce the spatial symmetry of the molecules with respect to the direction of current flow. We hereby unambigously detect an intrinsic property of the molecule, and are able to distinguish the influence of both the molecule and the contact to the metal electrodes on the transport properties of the compound system.

cond-mat.mes-hall↗

arXiv2001

Non-equilibrium electronic transport and interaction in short metallic nanobridges

We have observed interaction effects in the differential conductance $G$ of short, disordered metal bridges in a well-controlled non-equilibrium situation, where the distribution function has a double Fermi step. A logarithmic scaling law is found both for the temperature and for the voltage dependence of $G$ in all samples. The absence of magnetic field dependence and the low dimensionality of our samples allow us to distinguish between several possible interaction effects, proposed recently in nanoscopic samples. The universal scaling curve is explained quantitatively by the theory of electron-electron interaction in diffusive metals, adapted to the present case, where the sample size is smaller than the thermal diffusion length.

cond-mat.mes-hall↗

arXiv2000

Zero-bias transport anomaly in metallic nanobridges: Magnetic field dependence and universal conductance fluctuations

We present data of transport measurements through a metallic nanobridge exhibiting diffusive electron transport. A logarithmic temperature dependence and a zero-bias anomaly in the differential conductance are observed, independent of magnetic field. The data can be described by a single scaling law. The theory of electron-electron interaction in disordered systems, adapted to the case of finite-size systems in non-equilibrium, yields quantitative agreement with experiment. Measurements of universal conductance functuations support the assumptions of the theory about the electronic phase coherence.

cond-mat.mes-hall↗

arXiv2000

Conductance oscillations in mesoscopic rings: microscopic versus macroscopic picture

The phase of Aharonov-Bohm oscillations in mesoscopic metal rings in the presence of a magnetic field can be modulated by application of a DC-bias current I_DC. We address the question of how a variation of I_DC and hence of the microscopic phases of the electronic wave functions results in the macroscopic phase of the conductance oscillations. Whereas the first one can be varied continuously the latter has to be quantized for a ring in two-wire configuration by virtue of the Onsager symmetry relations. We observe a correlation between a phase flip by +/- pi and the amplitude of the oscillations.

cond-mat.mes-hall↗