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H. Bouchiat

Publications and source records attributed to H. Bouchiat.

At least 19 recordsLinked to original sources

Quantum Coherent Transport of 1D ballistic states in second order topological insulator Bi$_4$Br$_4$

We investigate quantum transport in micrometer-sized single crystals of Bi$_4$Br$_4$, a material predicted to be a second-order topological insulator. 1D topological states with long phase coherence times are revealed via the modulation of quantum interference with magnetic field and gate voltage. In particular, we demonstrate the existence of Aharonov-Bohm interference between 1D ballistic states several micrometers long, that we identify as phase-coherent hinge modes on neighboring step edges at the crystal surface. These Aharonov-Bohm oscillations are made possible by a disordered phase-coherent contact region, the existence of which is confirmed by scanning transmission electron microscopy combined with energy-dispersive X-ray spectroscopy (STEM-EDX) of FIB lamellae. Their coherent nature modulates the transmission of the 1D edge states, leading to weak antilocalization and universal conductance fluctuations with surprisingly large characteristic fields and a strongly anisotropic behavior. These complementary experimental results provide a comprehensive, coherent description of quantum transport in Bi$_4$Br$_4$, and establish the material as a second-order topological insulator with topologically protected 1D ballistic states.

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Chern junctions in Moir\'e-Patterned Graphene/PbI2

Expanding the moire material library continues to unlock novel quantum phases and emergent electronic behaviors. Here, we introduce PbI2 into the moire family and investigate the magnetotransport properties of moire superlattice in a hexagonal boron nitride/graphene/PbI2 heterostructures. In the high-field quantum Hall regime, we observe robust dissipationless transport at the charge neutrality point, indicative of incompressible states at filling factor vh = 0. Additionally, a fractional conductance plateau at 2/3 e2/h emerges, which we attribute to a Chern junction between domains with distinct Chern numbers originating from moire-modulated and conventional integer quantum Hall states. The moire Hofstadter spectrum displays an unconventional flavor sequence, likely influenced by proximity-induced spin-orbit coupling from the PbI2 layer. We also see coherent electronic interference along lines with Chern number vm = -2. These observations provide compelling evidence for the formation of moire domains that nontrivially interrupt incompressible quantum Hall states, reflecting the strong moire potential in the BN/graphene/PbI2 superlattice. We suggest that the moire Hofstadter spectrum coupled with the proximity-induced spin-orbit interaction from PbI2 gives rise to a high magnetic field topological insulator phase explaining ballistic transport at the charge neutrality point in the graphene monolayer.

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Probing the topological protection of edge states in multilayer tungsten ditelluride with the superconducting proximity effect

The topology of WTe2, a transition metal dichalcogenide with large spin-orbit interactions, is thought to combine type II Weyl semimetal and second-order topological insulator (SOTI) character. The SOTI character should endow WTe2 multilayer crystals with topologically protected helical states at its hinges, and, indeed, 1D states have been detected thanks to Josephson interferometry. However, the immunity to backscattering conferred to those states by their helical nature has so far not been tested. To probe the topological protection of WTe2 edge states, we have fabricated Superconducting Quantum Interference Devices (SQUIDs) in which the supercurrent through a junction on the crystal edge interferes with the supercurrent through a junction in the bulk of the crystal. We find behaviors ranging from a Symmetric SQUID pattern to asymmetric SQUID patterns, including one in which the modulation by magnetic field reveals a sawtooth-like supercurrent versus phase relation for the edge junction, demonstrating that the supercurrent at the edge is carried by ballistic channels over 600 nm, a tell-tale sign of the SOTI character of WTe2.

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Long-lived Andreev states as evidence for protected hinge modes in a bismuth nanoring Josephson junction

Second-order topological insulators are characterized by helical, non-spin-degenerate, one-dimensional states running along opposite crystal hinges, with no backscattering. Injecting superconducting pairs therefore entails splitting Cooper pairs into two families of helical Andreev states of opposite helicity, one at each hinge. Here we provide evidence for such separation via the measurement and analysis of switching supercurrent statistics of a crystalline nanoring of bismuth. Using a phenomenological model of two helical Andreev hinge modes, we find that pairs relax at a rate comparable to individual quasiparticles, in contrast with the much faster pair relaxation of non-topological systems. This constitutes a unique tell-tale sign of the spatial separation of topological helical hinges.

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Paramagnetic singularities of the orbital magnetism in graphene with a moiré potential

The recent detection of the singular diamagnetism of Dirac electrons in a single graphene layer paved a new way of probing 2D quantum materials through the measurement of equilibrium orbital currents which cannot be accessed in usual transport experiments. Among the theoretical predictions is an intriguing orbital paramagnetism at saddle points of the dispersion relation. Here we present magnetisation measurements in graphene monolayers aligned on hexagonal boron nitride (hBN)crystals. Beside the sharp diamagnetic McClure response at the Dirac point, we detect extra diamagnetic singularities at the satellite Dirac points (sDP) of the moiré lattice. Surrounding these diamagnetic satellite peaks, we also observe paramagnetic peaks located at the chemical potential of the saddle points of the Graphene moiré band structure and relate them to the presence of van Hove logarithmic singularities in the density of states. These findings reveal the long ago predicted anomalous paramagnetic orbital response in 2D systems when the Fermi energy is tuned to the vicinity of saddle points.

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Detection of graphene's divergent orbital diamagnetism at the Dirac point

The electronic properties of graphene have been intensively investigated over the last decade, and signatures of the remarkable features of its linear Dirac spectrum have been displayed using transport and spectroscopy experiments. In contrast, the orbital magnetism of graphene, which is one of the most fundamental signature of the characteristic Berry phase of graphene's electronic wave functions, has not yet been measured in a single flake. In particular, the striking prediction of a divergent diamagnetic response at zero doping calls for an experimental test. Using a highly sensitive Giant Magnetoresistance sensor (GMR) we have measured the gate voltage-dependent magnetization of a single graphene monolayer encapsulated between boron nitride crystals. The signal exhibits a diamagnetic peak at the Dirac point whose magnetic field and temperature dependences agree with theoretical predictions starting from the work of Mc Clure \cite{McClure1956}. Our measurements open a new field of investigation of orbital currents in graphene and 2D topological materials, offering a new means to monitor Berry phase singularities and explore correlated states generated by combined effects of Coulomb interactions, strain or moiré potentials.

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Collapse of the Josephson emission in a carbon nanotube junction in the Kondo regime

We probe the high frequency emission of a carbon nanotube based Josephson junction and compare it to its DC Josephson current. The AC emission is probed by coupling the carbon nanotube to an on-chip detector (a Superconductor-Insulator-Superconductor junction), via a coplanar waveguide resonator. The measurement of the photo-assisted current of the detector gives direct access to the signal emitted by the carbon nanotube. We focus on the gate regions that exhibit Kondo features in the normal state and demonstrate that when the DC supercurrent is enhanced by the Kondo effect, the AC Josephson effect is strongly reduced. This result is compared to NRG theory and is attributed to a transition between the singlet ground state and the doublet excited state which is enabled only when the junction is driven out-of-equilibrium by a voltage bias.

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Coupled pair of one and two dimensional magneto-plasmons on electrons on helium

Electrons on the liquid helium surface form an extremely clean two dimensional system where different plasmon-excitations can coexist. Under a magnetic field time reversal symmetry is broken and all the bulk magneto-plasmons become gaped at frequencies below cyclotron resonance while chiral one dimensional edge magneto-plasmons appear at the system perimeter. We theoretically show that the presence of a homogeneous density gradient in the electron gas leads to the formation of a delocalized magneto-plasmon mode in the same frequency range as the lowest frequency edge-magnetoplasmon mode. We experimentally confirm its existence by measuring the corresponding resonance peak in frequency dependence of the admittance of the electron gas. This allows to realize a prototype system to investigate the coupling between a chiral one-dimensional mode and a single delocalized bulk mode. Such a model system can be important for the understanding of transport properties of topological materials where states of different dimensionality can coexist.

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Spin-orbit-enhanced robustness of supercurrent in graphene/WS$_2$ Josephson junctions

We demonstrate enhanced robustness of the supercurrent through graphene-based Josephson junctions in which strong spin-orbit interactions (SOIs) are induced. We compare the persistence of a supercurrent at high magnetic fields between Josephson junctions with graphene on hexagonal boron-nitride and graphene on WS$_2$, where strong SOIs are induced via the proximity effect. We find that in the shortest junctions both systems display signatures of induced superconductivity, characterized by a suppressed differential resistance at a low current, in magnetic fields up to 1 T. In longer junctions however, only graphene on WS$_2$ exhibits induced superconductivity features in such high magnetic fields, and they even persist up to 7 T. We argue that these robust superconducting signatures arise from quasi-ballistic edge states stabilized by the strong SOIs induced in graphene by WS$_2$.

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Long- to short-junction crossover and field-reentrant critical current in Al/Ag-nanowires/Al Josephson junctions

We have probed the superconducting proximity effect through long high-quality monocrystalline Ag nanowires, by realizing Josephson junctions of different lengths, with different superconducting materials. Thanks to the high number of junctions probed, both the contact resistance and electron diffusion constant could be determined, enabling a comparison of the measured critical current to theoretical expectation, over the entire regime from short to long diffusive junction. Although the length dependence of the critical current is as expected, the amplitude of the $R_{N}I_c$ product is smaller than predicted by theory. We also address the magnetic field dependence of the critical current. The quasi-gaussian decay of the critical current with field expected of a long narrow junction is observed for all superconducting contacts we used except for aluminum. We present the striking non-monotonous effect of field on the critical current of junctions with aluminum contacts, and analyze it in terms of improved quasiparticle thermalization by a magnetic field.

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Coupling between Rydberg states and Landau levels of electrons trapped on liquid helium

We investigate the coupling between Rydberg states of electrons trapped on a liquid Helium surface and Landau levels induced by a perpendicular magnetic field. We show that this realises a prototype quantum system equivalent to an atom in a cavity, where their coupling strength can be tuned by a parallel magnetic field. We determine experimentally the renormalisation of the atomic transition energies induced by the coupling to the cavity, which can be seen as an analogue of the Lamb shift. When the coupling is sufficiently strong the transition between the ground and first excited Rydberg states splits into two resonances corresponding to dressed states with vacuum and one photon in the cavity. Our results are in quantitative agreement with the energy shifts predicted by the effective atom in a cavity model where all parameters are known with high accuracy.

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Spin-Orbit Interaction Induced in Graphene by Transition-Metal Dichalcogenides

We report a systematic study on strong enhancement of spin-orbit interaction (SOI) in graphene driven by transition-metal dichalcogenides (TMDs). Low temperature magnetotoransport measurements of graphene proximitized to different TMDs (monolayer and bulk WSe$_2$, WS$_2$ and monolayer MoS$_2$) all exhibit weak antilocalization peaks, a signature of strong SOI induced in graphene. The amplitudes of the induced SOI are different for different materials and thickness, and we find that monolayer WSe$_2$ and WS$_2$ can induce much stronger SOI than bulk ones and also monolayer MoS$_2$. The estimated spin-orbit (SO) scattering strength for the former reaches $\sim$ 10 meV whereas for the latter it is around 1 meV or less. We also discuss the symmetry and type of the induced SOI in detail, especially focusing on the identification of intrinsic and valley-Zeeman (VZ) SOI via the dominant spin relaxation mechanism. Our findings offer insight on the possible realization of the quantum spin Hall (QSH) state in graphene.

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Microwave signature of robust topological Andreev-level crossings in superconducting proximitized crystalline Bi nanowires

Demonstrating the topological protection of Andreev states in Josephson junctions is an experimental challenge. In particular the telltale $4π$ periodicity expected for the current phase relation of topological Josephson junctions has remained elusive, because of fast parity breaking processes. It was predicted that low temperature ac susceptibility measurements related to the current thermal noise could reveal the topological protection of quantum Spin Hall edge states \cite{Fu2009}, by probing their low energy Andreev spectrum.% of QSH-based Josephson junctions. We have performed such a microwave probing of the Andreev spectrum of a phase biased Josephson junction built around a bismuth nanowire, which was previously shown to host one-dimensional ballistic edge states. We find absorption peaks at the Andreev level crossings, whose temperature and frequency dependences point to protected topological crossings with an accuracy limited by the electronic temperature of our experiment.

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0-Pi quantum transition in a carbon nanotube Josephson junction: Universal phase dependence and orbital degeneracy

In a quantum dot hybrid superconducting junction, the behavior of the supercurrent is dominated by Coulomb blockade physics, which determines the magnetic state of the dot. In particular, in a single level quantum dot singly occupied, the sign of the supercurrent can be reversed, giving rise to a pi-junction. This 0-pi transition, corresponding to a singlet-doublet transition, is then driven by the gate voltage or by the superconducting phase in the case of strong competition between the superconducting proximity effect and Kondo correlations. In a two-level quantum dot, such as a clean carbon nanotube, 0-pi transitions exist as well but, because more cotunneling processes are allowed, are not necessarily associated to a magnetic state transition of the dot. In this proceeding, after a review of 0-pi transitions in Josephson junctions, we present measurements of current-phase relation in a clean carbon nanotube quantum dot, in the single and two-level regimes. In the single level regime, close to orbital degeneracy and in a regime of strong competition between local electronic correlations and superconducting proximity effect, we find that the phase diagram of the phase-dependent transition is a universal characteristic of a discontinuous level-crossing quantum transition at zero temperature. In the case where the two levels are involved, the nanotube Josephson current exhibits a continuous 0-pi transition, independent of the superconducting phase, revealing a different physical mechanism of the transition.

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Emission Noise and High Frequency Cut-Off of the Kondo Effect in a Quantum Dot

By coupling on chip a carbon nanotube to a quantum noise detector, a superconductor-insulator-superconductor junction, via a resonant circuit, we measure the emission noise of a carbon nanotube quantum dot in the Kondo regime. The signature of the Kondo effect in the current noise is measured for different ratios of the Kondo temperature over the measured frequency and for different asymmetries of the coupling to the contacts, and compared to finite frequency quantum noise calculations. Our results point towards the existence of a high frequency cut-off of the electronic emission noise associated with the Kondo resonance. This cut-off frequency is of the order of a few times the Kondo temperature when the electronic system is close to equilibrium, which is the case for a strongly asymmetric coupling. On the other hand, this cut-off is shifted to lower frequency in a symmetric coupling situation, where the bias voltage drives the Kondo state out-of-equilibrium. We then attribute the low frequency cut-off to voltage induced spin relaxation.

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Room temperature magneto-optic effect in silicon light-emitting diodes

In weakly spin-orbit coupled materials, the spin-selective nature of recombination can give rise to large magnetic-field effects, for example on electro-luminescence from molecular semiconductors. While silicon has weak spin-orbit coupling, observing spin-dependent recombination through magneto-electroluminescence is challenging due to the inefficiency of emission due to silicon's indirect band-gap, and to the difficulty in separating spin-dependent phenomena from classical magneto-resistance effects. Here we overcome these challenges to measure magneto-electroluminescence in silicon light-emitting diodes fabricated via gas immersion laser doping. These devices allow us to achieve efficient emission while retaining a well-defined geometry thus suppressing classical magnetoresistance effects to a few percent. We find that electroluminescence can be enhanced by up to 300\% near room temperature in a seven Tesla magnetic field showing that the control of the spin degree of freedom can have a strong impact on the efficiency of silicon LEDs.

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Full range of proximity effect probed with Superconductor/Graphene/Superconductor junctions

The high tunability of the density of states of graphene makes it an ideal probe of quantum transport in different regimes. In particular, the supercurrent that can flow through a non-superconducting (N) material connected to two superconducting electrodes, crucially depends on the lenghth of the N relative to the superconducting coherence length. Using graphene as the N material we have investigated the full range of the superconducting proximity effect, from short to long diffusive junctions. By combining several S/graphene/S samples with different contacts and lengths, and measuring their gate-dependent critical currents ($ I_c $) and normal state resistance $ R_N $, we compare the product $eR_NI_c$ to the relevant energies, the Thouless energy in long junctions and the superconducting gap of the contacts in short junctions, over three orders of magnitude of Thouless energy. The experimental variations strikingly follow a universal law, close to the predictions of the proximity effect both in the long and short junction regime, as well as in the crossover region, thereby revealing the interplay of the different energy scales. Differences in the numerical coefficients reveal the crucial role played by the interfacial barrier between graphene and the superconducting electrodes, which reduces the supercurrent in both short and long junctions. Surprisingly the reduction of supercurrent is independent of the gate voltage and of the nature of the electrodes. A reduced induced gap and Thouless energy are extracted, revealing the role played by the dwell time in the barrier in the short junction, and an effective increased diffusion time in the long junction. We compare our results to the theoretical predictions of Usadel equations and numerical simulations which better reproduce experiments with imperfect NS interfaces.

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Signature of gate-tunable magnetism in graphene grafted with Pt-porphyrins

Inducing magnetism in graphene holds great promises, such as controlling the exchange interaction with a gate electrode and generating exotic magnetic phases. Coating graphene with magnetic molecules or atoms has so far mostly lead to decreased graphene mobility. In the present work, we show that Pt-porphyrins adsorbed on graphene lead to an enhanced mobility and to gate-dependent magnetism. We report that porphyrins can be donor or acceptor, depending on graphene s initial doping. The porphyrins transfer charge and ionize around the charged impurities on graphene, decreasing the graphene doping and increasing its mobility. In addition, ionized porphyrins carry a magnetic moment. Using the sensitivity of mesoscopic transport to magnetism, in particular the superconducting proximity effect and conductance fluctuations, we explore the magnetic order induced in graphene by the interacting magnetic moments of the ionized porphyrins. Among the signatures of magnetism, we find two-terminal-magnetoresistance fluctuations with an odd component, a tell-tale sign of time reversal symmetry breaking at zero field, that does not exist in uncoated graphene sample. When graphene is connected to superconducting electrodes, the induced magnetism leads to a gate-voltage-dependent suppression of the supercurrent, modified magnetic interference patterns, and gate-voltage-dependent magnetic hysteresis. The magnetic signatures are greatest for long superconductor graphene superconductor junctions and for samples with the highest initial doping, compatible with a greater number of ionized and thus magnetic porphyrins. Our findings suggest that long-range magnetism is induced through graphene by the ionized porphyrins magnetic moment. This magnetic interaction is controlled by the density of carriers in graphene, a tunability that could be exploited in spintronic applications.

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