arXiv subjects

H. C. Xu

Publications and source records attributed to H. C. Xu.

25 records · Page 2Linked to original sources

arXiv2014

Electronic structure of the BaTi$_2$As$_2$O parent compound of the titanium based oxypnictide superconductor

The electronic structure of BaTi2As2O, a parent compound of the newly discovered titanium-based oxypnictide superconductors, is studied by angle-resolved photoemission spectroscopy. The electronic structure shows multi-orbital nature and possible three-dimensional character. An anomalous temperature-dependent spectral weight redistribution and broad lineshape indicate the incoherent nature of the spectral function. At the density-wave-like transition temperature around 200 K, a partial gap opens at the Fermi patches. These findings suggest that BaTi2As2O is likely a charge density wave material in the strong interaction regime.

cond-mat.supr-con↗

arXiv2013

Enhanced superconductivity and evidence for novel pairing in single-layer FeSe on SrTiO3 thin film under large tensile strain

Single-layer FeSe films with extremely expanded in-plane lattice constant of 3.99A are fabricated by epitaxially growing FeSe/Nb:SrTiO3/KTaO3 heterostructures, and studied by in situ angle-resolved photoemission spectroscopy. Two elliptical electron pockets at the Brillion zone corner are resolved with negligible hybridization between them, indicating the symmetry of the low energy electronic structure remains intact as a free-standing single-layer FeSe, although it is on a substrate. The superconducting gap closes at a record high temperature of 70K for the iron based superconductors. Intriguingly, the superconducting gap distribution is anisotropic but nodeless around the electron pockets, with minima at the crossings of the two pockets. Our results put strong constraints on the current theories, and support the coexistence of both even and odd parity spin-singlet pairing channels as classified by the lattice symmetry.

cond-mat.supr-con↗

arXiv2013

The unique electronic structure of Ca10(Pt4As8)(Fe2-xPtxAs2)5 with metallic Pt4As8 layers

We studied the low-lying electronic structure of the newly discovered iron-platinum-arsenide superconductor, Ca10(Pt4As8)(Fe2-xPtxAs2)5 (Tc=22 K) with angle-resolved photoemission spectroscopy. We found that the Pt4As8 layer contributes to a small electron-like Fermi surface, indicative of metallic charge reservoir layers that are rare for iron based superconductors. Moreover, the electronic structure of the FeAs-layers resembles those of other prototype iron pnictides to a large extent. However, there is only dxy-orbital originated hole-like Fermi surface near the zone center, which is rather unique for an iron pnictide superconductor with relatively high superconducting transition temperature; and the dxz and dyz originated bands are not degenerate at the zone center. Furthermore, all bands near the Fermi energy show negligible kz dependence, indicating the strong two-dimensional nature of this material. Our results indicate this material possesses rather unique electronic structure, which enriches our current knowledge of iron based superconductors.

cond-mat.supr-con↗

arXiv2013

Direct observation of the bandwidth control Mott transition in the NiS$_{2-x}$Se$_x$ multiband system

The bulk electronic structure of NiS$_{2-x}$Se$_x$ is studied across the bandwidth-control Mott transition (BCMT) by soft X-ray angle-resolved photoemission spectroscopy. The microscopic picture of the BCMT in this multiband non-half-filled system is revealed for the first time. We show that Se doping does not alter the Fermi surface volume. When approaching the insulating phase with decreasing Se concentration, we observed that the Fermi velocity continuously decreases. Meanwhile, the coherent quasiparticle weight continuously decreases and is transferred to higher binding energies, until it suddenly disappears across the Mott transition. In the insulating phase, there is still finite spectral weight at the Fermi energy, but it is incoherent and dispersionless due to strong correlations. Our results provide a direct observation of BCMT, and unveil its distinct characters in a multiband non-half-filled system.

cond-mat.str-el↗

arXiv2013

An ARPES Study of the Electronic Structure of the Quantum Spin Liquid EtMe3Sb[Pd(dmit)2]2

The electronic structure of a quantum spin liquid compound, EtMe3Sb[Pd(dmit)2]2, has been studied with angle-resolved photoemission spectroscopy, together with two other Pd(dmit)2 salts in the valence bond solid or antiferromagnetic state. We have resolved several bands that have negligible dispersions and fit well to the calculated energy levels of an isolated [Pd(dmit)2]2 dimer. EtMe3Sb[Pd(dmit)2]2 being a Mott insulator, its lower Hubbard band is identified, and there is a small gap of ~ 50 meV between this band and the chemical potential. Moreover, the spectral features exhibit polaronic behavior with anomalously broad linewidth. Compared with existing theories, our results suggest that strong electron-boson interactions, together with smaller hopping and on-site Coulomb interaction terms have to be considered for a realistic modeling of the organic quantum spin liquid systems like the Pd(dmit)2 salt.

cond-mat.str-el↗

arXiv2013

The origin of the dead-layer at the La0.67Sr0.33MnO3/SrTiO3 interface and dead-layer reduction via interfacial engineering

Transition metal oxide hetero-structure has great potential for multifunctional devices. However, the degraded physical properties at interface, known as dead-layer behavior, present a main obstacle for device applications. Here we present the systematic study of the dead-layer behavior in La0.67Sr0.33MnO3 thin film grown on SrTiO3 substrate with ozone assisted molecular beam epitaxy. We found that the evolution of electric and magnetic properties as a function of thickness shows a remarkable resemblance to the phase diagram as a function of doping for bulk materials, providing compelling evidences of the hole depletion in near interface layers that causes dead-layer. Detailed electronic and surface structure studies indicate that the hole depletion is due to the intrinsic oxygen vacancy formation. Furthermore, we show that oxygen vacancies are partly caused by interfacial electric dipolar field, and thus by doping-engineering at the single-atomic-layer level, we demonstrate the dead-layer reduction in films with higher interfacial hole concentration.

cond-mat.mtrl-sci↗

arXiv2013

Interface-induced superconductivity and strain-dependent spin density wave in FeSe/SrTiO3 thin films

The record of superconducting transition temperature(Tc) has long been 56K for the iron-based high temperature superconductors(Fe-HTS's). Recently, in single layer FeSe films grown on SrTiO3 substrate, signs for a new 65K Tc record are reported. Here with in-situ photoemission measurements, we substantiate the presence of the spin density wave(SDW) in FeSe films, a key ingredient of Fe-HTS that was missed in FeSe before, which weakens with increased thickness or reduced strain. We demonstrate that the superconductivity occurs when the electrons transferred from the oxygen-vacant substrate suppress the otherwise most pronounced SDW in single layer FeSe. Besides providing a comprehensive understanding of FeSe films and directions to further enhance its Tc, we establish the phase diagram of FeSe vs. lattice constant that contains all the essential physics of Fe-HTS's. With the simplest structure, cleanest composition and single tuning parameter, it is ideal for testing theories of Fe-HTS's.

cond-mat.supr-con↗