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H. Cheraghchi

Publications and source records attributed to H. Cheraghchi.

3 recordsLinked to original sources

Floquet states and optical conductivity of an irradiated two dimensional topological insulator

We study the topology of the Floquet states and time-averaged optical conductivity of the lattice model of a thin topological insulator subject to a circularly polarized light using the extended Kubo formalism. Two driving regimes, the off-resonant and on-resonant, and two models for the occupation of the Floquet states, the ideal and mean-energy occupation, are considered. In the ideal occupation, the real part of DC optical Hall conductivity is shown to be quantized while it is not quantized for the mean energy distribution. The optical transitions in the Floquet band structure depend strongly on the occupation and also the optical weight which consequently affect all components of optical conductivity. At high frequency regime, we present an analytical calculation of the effective Hamiltonian and also its phase diagram which depends on the tunneling energy between two surfaces. The topology of the system shows rich phases when it is irradiated by a weak on-resonant drive giving rise to emergence of anomalous edge states.

cond-mat.mes-hall

Electric Circuit Simulation of Floquet Topological Insulators

We present a method for simulating any non-interacting and time-periodic tight-binding Hamiltonian in Fourier space using electric circuits made of inductors and capacitors. We first map the time-periodic Hamiltonian to a Floquet Hamiltonian, which converts the time dimension into a Floquet dimension. In electric circuits, this Floquet dimension is simulated as an extra spatial dimension without any time dependency in the electrical elements. The number of replicas needed in the Floquet Hamiltonian depends on the frequency and strength of the drive. We also demonstrate that we can detect the topological edge states (including the anomalous edge states in the dynamical gap) in an electric circuit by measuring the two-point impedance between the nodes. Our method paves a simple and promising way to explore and control Floquet topological phases in electric circuits.

cond-mat.mes-hall

Localization-delocalization transition in a one-dimensional system with long-range correlated off-diagonal disorder

The localization behavior of the one-dimensional Anderson model with correlated and uncorrelated purely off-diagonal disorder is studied. Using the transfer matrix method, we derive an analytical expression for the localization length at the band center in terms of the pair correlation function. It is proved that for long-range correlated hopping disorder, a localization-delocalization transition occurs at the critical Hurst exponent H_c= 1/2 when the variance of the logarithm of hopping "σ_{\ln(t)}" is kept fixed with the system size N. Based on numerical calculations, finite size scaling relations are postulated for the localization length near the band center (E \neq 0) in terms of the system parameters: E,N,H, and σ_{\ln(t)}.

cond-mat.dis-nn