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H. F. Yu

Publications and source records attributed to H. F. Yu.

6 recordsLinked to original sources

High-order topological pumping on a superconducting quantum processor

High-order topological phases of matter refer to the systems of $n$-dimensional bulk with the topology of $m$-th order, exhibiting $(n-m)$-dimensional boundary modes and can be characterized by topological pumping. Here, we experimentally demonstrate two types of second-order topological pumps, forming four 0-dimensional corner localized states on a 4$\times$4 square lattice array of 16 superconducting qubits. The initial ground state of the system for half-filling, as a product of four identical entangled 4-qubit states, is prepared using an adiabatic scheme. During the pumping procedure, we adiabatically modulate the superlattice Bose-Hubbard Hamiltonian by precisely controlling both the hopping strengths and on-site potentials. At the half pumping period, the system evolves to a corner-localized state in a quadrupole configuration. The robustness of the second-order topological pump is also investigated by introducing different on-site disorder. Our work studies the topological properties of high-order topological phases from the dynamical transport picture using superconducting qubits, which would inspire further research on high-order topological phases.

quant-ph

Two-level approximation of transmons in quantum quench experiments

Quantum quench is a typical protocol in the study of nonequilibrium dynamics of quantum many-body systems. Recently, a number of experiments with superconducting transmon qubits are reported, in which the spin and hard-core boson models with two energy levels on individual sites are used. The transmons are a multilevel system and the coupled qubits are governed by the Bose-Hubbard model. How well they can be approximated by a two-level system has been discussed and analysed in different ways for specific experiments in the literature. Here, we numerically investigate the accuracy and validity of the two-level approximation for the multilevel transmons based on the concept of Loschmidt echo. Using this method, we are able to calculate the fidelity decay (i.e., the time-dependent overlap of evolving wave functions) due to the state leakage to transmon high energy levels. We present the results for different system Hamiltonians with various initial states, qubit coupling strength, and external driving, and for two kinds of quantum quench experiments with time reversal and time evolution in one direction. We show quantitatively the extent to which the fidelity decays with time for changing coupling strength (or on-site interaction over coupling strength) and filled particle number or locations in the initial states under specific system Hamiltonians, which may serve as a way for assessing the two-level approximation of transmons. Finally, we compare our results with the reported experiments using transmon qubits.

quant-ph

Probing Operator Spreading via Floquet Engineering in a Superconducting Circuit

Operator spreading, often characterized by out-of-time-order correlators (OTOCs), is one of the central concepts in quantum many-body physics. However, measuring OTOCs is experimentally challenging due to the requirement of reversing the time evolution of systems. Here we apply Floquet engineering to investigate operator spreading in a superconducting 10-qubit chain. Floquet engineering provides an effective way to tune the coupling strength between nearby qubits, which is used to demonstrate quantum walks with tunable couplings, reversed time evolution, and the measurement of OTOCs. A clear light-cone-like operator propagation is observed in the system with multiple excitations, and has a nearly equal velocity as the single-particle quantum walk. For the butterfly operator that is nonlocal (local) under the Jordan-Wigner transformation, the OTOCs show distinct behaviors with (without) a signature of information scrambling in the near integrable system.

quant-ph

Fabrication of Nb/Al2O3/Nb Josephson Junctions using in situ Magnetron Sputtering and Atomic Layer Deposition

Atomic layer deposition (ALD) provides a promising approach for deposition of ultrathin low-defect-density tunnel barriers, and it has been implemented in a high-vacuum magnetron sputtering system for in situ deposition of ALD-Al2O3 tunnel barriers in superconductor-insulator-superconductor (SIS) Josephson junctions. A smooth ALD-Al2O3 barrier layer was grown on a Al-wetted Nb bottom electrode and was followed with a top Nb electrode growth using sputtering. Preliminary low temperature measurements of current-voltage characteristics (IVC) of the Josephson junctions made from these trilayers confirmed the integrity of the ALD-Al2O3 barrier layer. However, the IcRN product of the junctions is much smaller than the value expected from the Ambegaokar-Baratoff formula suggesting a significant pair-breaking mechanism at the interfaces.

cond-mat.mtrl-sci

Quantum Phase Diffusion in a Small Underdamped Josephson Junction

Quantum phase diffusion in a small underdamped Nb/AlO$_x$/Nb junction ($\sim$ 0.4 $\mu$m$^2$) is demonstrated in a wide temperature range of 25-140 mK where macroscopic quantum tunneling (MQT) is the dominant escape mechanism. We propose a two-step transition model to describe the switching process in which the escape rate out of the potential well and the transition rate from phase diffusion to the running state are considered. The transition rate extracted from the experimental switching current distribution follows the predicted Arrhenius law in the thermal regime but is greatly enhanced when MQT becomes dominant.

cond-mat.supr-con

Quantum and classical resonant escapes of a strongly-driven Josephson junction

The properties of phase escape in a dc SQUID at 25 mK, which is well below quantum-to-classical crossover temperature $T_{cr}$, in the presence of strong resonant ac driving have been investigated. The SQUID contains two Nb/Al-AlO$_{x} $/Nb tunnel junctions with Josephson inductance much larger than the loop inductance so it can be viewed as a single junction having adjustable critical current. We find that with increasing microwave power $W$ and at certain frequencies $\nu $ and $\nu $/2, the single primary peak in the switching current distribution, \textrm{which is the result of macroscopic quantum tunneling of the phase across the junction}, first shifts toward lower bias current $I$ and then a resonant peak develops. These results are explained by quantum resonant phase escape involving single and two photons with microwave-suppressed potential barrier. As $W$ further increases, the primary peak gradually disappears and the resonant peak grows into a single one while shifting further to lower $I$. At certain $W$, a second resonant peak appears, which can locate at very low $I$ depending on the value of $\nu $. Analysis based on the classical equation of motion shows that such resonant peak can arise from the resonant escape of the phase particle with extremely large oscillation amplitude resulting from bifurcation of the nonlinear system. Our experimental result and theoretical analysis demonstrate that at $T\ll T_{cr}$, escape of the phase particle could be dominated by classical process, such as dynamical bifurcation of nonlinear systems under strong ac driving.

cond-mat.supr-con