arXiv subjects

H. Ikuta

Publications and source records attributed to H. Ikuta.

At least 19 recordsLinked to original sources

arXiv2022

Inter- to Intra-Layer Resistivity Anisotropy of NdFeAs(O,H) with Various Hydrogen Concentrations

With molecular beam epitaxy and topotactic chemical reaction, we prepared NdFeAs(O,H) epitaxial thin films with various hydrogen concentrations on 5° vicinal cut MgO substrates. By measuring the resistivities along the longitudinal and transversal directions, the ab plane and the c axis resistivities (\{rho}_ab and \{rho}_c) were obtained. The resistivity anisotropy γ_\{rho}=\{rho}_c \ \{rho}_ab of NdFeAs(O,H) with various hydrogen concentrations was compared with that of NdFeAs(O,F). At the H concentrations which led to superconducting transition temperatures Tc over 40 K, γ_\r{ho} recorded ~100-150 at 50 K. On the other hand, a low γ_\{rho} value of 9 was observed with the mostly doped sample. The exponent \{beta} of the ab plane resistivity obtained by fitting a power law expression \{rho}_{ab}(T)=\{rho}_0+AT^\{beta} to the data was close to unity down to low temperature in the vicinity where the second antiferromagnetic phase locates, which may be related to the quantum critical point discussed at the over-doped side of the phase diagram.

cond-mat.supr-con↗

arXiv2022

Hall coefficient in amorphous alloys: critical behavior and quantitative test of quantum corrections due to weak localization and electron-electron interactions

Here, we present the measurements of $R_H$ in a series of $Ti_xSi_{100-x}$ amorphous reaching the critical concentration, $x_c\approx9-9.5$. For $x\geq17$, the Hall coefficient displays the behavior predicted by the perturbation theory, $R_H^{-1}\left(T\right)=R_H^{-1}\left(0\right)+bT^{1/2}$, which extends up to the temperature 150 K. The temperature dependence gets stronger in alloys with lower $x$; $R_H\left(0\right)$ diverges at $x_c$ displaying critical behavior. We used the combined conductivity and Hall coefficient data for alloys with high Ti content to test the theories of quantum corrections to conductivity. We found that the correction due to weak localization is dominated by the electron-phonon scattering with the rate varying with temperature as $τ_{ep}^{-1}=A_{ep}T^2$. The extracted parameter $A_{ep}$ is in good agreement with the theory that considers the incomplete drag of impurities by lattice vibrations. The spin-orbit scattering time extracted from the weak localization correction was found to be two orders of magnitude larger than the time given by the standard estimate $τ_{so}\approxτ\left(\hbar c/e^2Z\right)^4$. The theory of the EEI quantum correction was tested using the Hall coefficient and specific heat data for Ti-Si and $\left(Ag_{0.5}Cu_{0.5}\right)_{100-x}Ge_x$ amorphous alloys, which allowed us to estimate all microscopic parameters needed by the theory. We found that, within the accuracy of our measurements, the EEI theory works exactly for alloys that follow the free electron model [$\left(Ag_{0.5}Cu_{0.5}\right)_{100-x}Ge_x$ with $x\le50$.] The deviation from the theory observed in all Ti-Si alloys and in Ag-Cu-Ge alloys with $x\geq60$ can be qualitatively explained by weakening of the electron screening in the systems.

cond-mat.mes-hall↗

arXiv2022

Critical behavior of the specific heat in Ti-Si amorphous alloys at the metal-insulator transition

In this paper, we report the measurements of specific heat of an amorphous $Ti_{9.5}Si_{90.5}$ alloy located very close to the critical point of the metal-insulator transition. In the presence of a magnetic field, the specific heat is dominated by the Schottky anomaly caused by magnetic moments associated with the dangling bonds in the matrix of amorphous Si. Subtraction of this contribution exposes the behavior of the electronic specific heat coefficient $γ$. The coefficient is temperature-independent above 2 K and is, in order of magnitude, close to the value expected in the absence of electron-electron interactions. In the temperature range 0.4-1.5 K, the coefficient $γ$ shows an anomalous downturn, which can be approximated by the dependence $γ\left(T\right)=γ_0ln{(T/T_0)}$, with $T_0\approx0.2$ K . In a companion paper, we found that the Hall coefficient in Ti-Si alloys is affected by the electron-electron interaction up to much higher temperature of 150 K and also varies critically across the metal-insulator transition. We compare our results with theoretical predictions for three models, which can potentially explain the anomalous behavior of the specific heat: generalized non-linear $σ$ model, Coulomb glass, and many-body localization.

cond-mat.dis-nn↗

arXiv2019

p-Wave Superconductivity in Iron-based Superconductors

The possibility of p-wave pairing in superconductors has been proposed more than five decades ago, but has not yet been convincingly demonstrated. One difficulty is that some p-wave states are thermodynamically indistinguishable from s-wave, while others are very similar to d-wave states. Here we studied the self-field critical current of NdFeAs(O,F) thin films in order to extract absolute values of the London penetration depth, the superconducting energy gap, and the relative jump in specific heat at the superconducting transition temperature, and find that all the deduced physical parameters strongly indicate that NdFeAs(O,F) is a bulk p-wave superconductor. Further investigation revealed that single atomic layer FeSe also shows p-wave pairing. In an attempt to generalize these findings, we re-examined the whole inventory of superfluid density measurements in iron-based superconductors show quite generally that most of the iron-based superconductors are p-wave superconductors.

cond-mat.supr-con↗

arXiv2019

Density wave probes cuprate quantum phase transition

In cuprates, the strong correlations in proximity to the antiferromagnetic Mott insulating state give rise to an array of unconventional phenomena beyond high temperature superconductivity. Developing a complete description of the ground state evolution is crucial to decoding the complex phase diagram. Here we use the structure of broken translational symmetry, namely $d$-form factor charge modulations in (Bi,Pb)$_2$(Sr,La)$_2$CuO$_{6+δ}$, as a probe of the ground state reorganization that occurs at the transition from truncated Fermi arcs to a large Fermi surface. We use real space imaging of nanoscale electronic inhomogeneity as a tool to access a range of dopings within each sample, and we definitively validate the spectral gap $Δ$ as a proxy for local hole doping. From the $Δ$-dependence of the charge modulation wavevector, we discover a commensurate to incommensurate transition that is coincident with the Fermi surface transition from arcs to large hole pocket, demonstrating the qualitatively distinct nature of the electronic correlations governing the two sides of this quantum phase transition. Furthermore, the doping dependence of the incommensurate wavevector on the overdoped side is at odds with a simple Fermi surface driven instability.

cond-mat.supr-con↗

arXiv2019

Vortex glass-liquid transition and activated flux motion in an epitaxial, super-conducting NdFeAs(O,F) thin film

An epitaxial NdFeAs(O,F) thin film of 90 nm thickness grown by molecular beam epitaxy on MgO single crystal with Tc = 44.2 K has been investigated regarding a possible vortex glass-liquid tran-sition. The voltage-current characteristics show excellent scalability according to the vortex-glass model with a static critical exponent ν of around 1.35 and a temperature-dependent dynamic exponent z increasing from 7.8 to 9.0 for the investigated temperature range. The large and non-constant z values are discussed in the frame of 3D vortex glass, thermally activated flux motion, and inhomogeneity broadening.

cond-mat.supr-con↗

arXiv2018

Effect of $α$-particle irradiation on a NdFeAs(O,F) thin film

The effect of $α$-particle irradiation on a NdFeAs(O,F) thin film has been investigated to determine how the introduction of defects affects basic superconducting properties, including the critical temperature $T_c$ and the upper critical field $H_{c2}$, and properties more of interest for applications, like the critical current density $J_c$ and the related pinning landscape. The irradiation-induced suppression of the film $T_c$ is significantly smaller than on a similarly damaged single crystal. Moreover $H_{c2}$ behaves differently, depending on the field orientation: for H//c the $H_{c2}$ slope monotonically increases with increasing disorder, whereas for H//ab it remains constant at low dose and it increases only when the sample is highly disordered. This suggests that a much higher damage level is necessary to drive the NdFeAs(O,F) thin film into the dirty limit. Despite the increase in the low temperature $H_{c2}$, the effects on the $J_c$(H//c) performances are moderate in the measured temperature and field ranges, with a shifting of the pinning force maximum from 4.5 T to 6 T after an irradiation of $2\times10^{15} cm^{-2}$. On the contrary, $J_c$(H//ab) is always suppressed. The analysis demonstrates that irradiation does introduce point defects acting as pinning centres proportionally to the irradiation fluence but also suppresses the effectiveness of c-axis correlated pinning present in the pristine sample. We estimate that significant performance improvements may be possible at high field or at temperatures below 10 K. The suppression of the $J_c$(H//ab) performance is not related to a decrease of the $J_c$ anisotropy as found in other superconductors. Instead it is due to the presence of point defects that decrease the efficiency of the ab-plane intrinsic pinning typical of materials with a layered structure.

cond-mat.supr-con↗

arXiv2017

Selective mass enhancement close to the quantum critical point in BaFe$_2$(As$_{1-x}$P$_x$)$_2$

A quantum critical point (QCP) is currently being conjectured for the BaFe$_2$(As$_{1-x}$P$_x$)$_2$ system at the critical value $x_{\rm c} \approx$ 0.3. In the proximity of a QCP, all thermodynamic and transport properties are expected to scale with a single characteristic energy, given by the quantum fluctuations. Such an universal behavior has not, however, been found in the superconducting upper critical field $H_{\rm c2}$. Here we report $H_{\rm c2}$-data for epitaxial thin films extracted from the electrical resistance measured in very high magnetic fields up to 67 Tesla. Using a multi-band analysis we find that $H_{\rm c2}$ is sensitive to the QCP, implying a significant charge carrier effective mass enhancement at the doping-induced QCP that is essentially band-dependent. Our results point to two qualitatively different groups of electrons in BaFe$_2$(As$_{1-x}$P$_x$)$_2$. The first one (possibly associated to hot spots or whole Fermi sheets) has a strong mass enhancement at the QCP, and the second one is insensitive to the QCP. The observed duality could also be present in many other quantum critical systems.

cond-mat.supr-con↗

arXiv2016

Intrinsic and extrinsic pinning in NdFeAs(O,F): vortex trapping and lock-in by the layered structure

The Fe-based superconductors (FBS) present a large variety of compounds whose properties are affected to different extents by their crystal structures. Amongst them, the $\it{RE}$FeAs(O,F) ($\it{RE}$1111, where $\it{RE}$ is a rare earth element) is the family with the highest critical temperature $T_c$ but also with a large anisotropy and Josephson vortices as demonstrated in the flux-flow regime in Sm1111 ($T_c$ $\sim$ 55 K). Here we focus our attention on the pinning properties of the lower-$T_c$ Nd1111 in the flux-creep regime. We demonstrate that for H//c critical current density $J_c$ at high temperatures is dominated by point-defect pinning centres, whereas at low temperatures surface pinning by planar defects parallel to the $\it{c}$-axis and vortex shearing prevail. When the field approaches the $\it{ab}$-planes, two different regimes are observed at low temperatures as a consequence of the transition between 3D-Abrikosov and 2D-Josephson vortices: one is determined by the formation of a vortex staircase structure and one by lock-in of the vortices parallel to the layers. This is the first study on FBS showing this behaviour in a full temperature, field, and angular range and it demonstrates that, despite the lower $T_c$ and anisotropy of Nd1111 with respect to Sm1111, this compound is substantially affected by intrinsic pinning generating a strong $\it{ab}$-peak in $J_c$.

cond-mat.supr-con↗

arXiv2015

Unusually high critical current of clean P-doped BaFe2As2 single crystalline thin film

Microstructura lly clean, isov alently P-doped BaFe2As2 (Ba-122) single crystalline thin films have been prepared on MgO (001) substrates by molecular beam epitaxy. These films show a superconducting transition temperature (Tc) of over 30 K although P content is around 0.22, which is lower than the optimal one for single crystals (i.e., 0.33). The enhanced Tc at this doping level is attributed to the in-plane tensile strain. The strained film shows high transport self-field critical current densities (Jc) of over 6 MA/cm2 at 4.2 K, which are among the highest for Fe based superconductors (FeSCs). In-field Jc exceeds 0.1 MA/cm2 at m0H = 35 T for H||ab and m0H = 18 T for H||c at 4.2 K, respectively, in spite of moderate upper critical fields compared to other FeSCs with similar Tc. Structural investigations reveal no defects or misoriented grains pointing to strong pinning centers. We relate this unexpected high Jc to a strong enhancement of the vortex core energy at optimal Tc, driven by in-plane strain and doping. These unusually high Jc make P-doped Ba-122 very favorable for high-field magnet applications.

cond-mat.supr-con↗

arXiv2014

Fermi Surface and Pseudogap Evolution in a Cuprate Superconductor

The unclear relationship between cuprate superconductivity and the pseudogap state remains an impediment to understanding the high transition temperature (Tc) superconducting mechanism. Here we employ magnetic-field-dependent scanning tunneling microscopy to provide phase-sensitive proof that d-wave superconductivity coexists with the pseudogap on the antinodal Fermi surface of an overdoped cuprate. Furthermore, by tracking the hole doping (p) dependence of the quasiparticle interference pattern within a single Bi-based cuprate family, we observe a Fermi surface reconstruction slightly below optimal doping, indicating a zero-field quantum phase transition in notable proximity to the maximum superconducting Tc. Surprisingly, this major reorganization of the system's underlying electronic structure has no effect on the smoothly evolving pseudogap.

cond-mat.supr-con↗

arXiv2012

Probing electronic order via coupling to low energy phonons in superconducting Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+δ}$

We report high-resolution inelastic x-ray scattering measurements of the acoustic phonons in the single-layer cuprate $Bi_{2}Sr_{2-x)La_{x}CuO_{6+δ}$. These measurements reveal anomalous broadening of the longitudinal acoustic phonon near the (1/4,1/4,0) wavevector. The observed wavevector and its doping dependence indicate the coupling of the phonons to an underlying electronic density wave state. In addition, a comparison of the scattered intensities for x-ray energy-gain and x-ray energy-loss indicates that both time-reversal and inversion symmetries are broken in the material. Upon cooling, the effects of symmetry breaking are enhanced in the pseudogap state.

cond-mat.supr-con↗

arXiv2011

Epitaxial growth of FeSe$_{0.5}$Te$_{0.5}$ thin films on CaF$_2$ substrates with high critical current density

In-situ epitaxial growth of FeSe$_{0.5}$Te$_{0.5}$ thin films is demonstrated on a non-oxide substrate CaF$_2$. Structural analysis reveals that compressive stress is moderately added to 36-nm thick FeSe$_{0.5}$Te$_{0.5}$, which pushes up the critical temperature above 15 K, showing higher values than that of bulk crystals. Critical current density at $T$ = 4.5 K reaches 5.9 x 10$^4$ Acm$^{-2}$ at $μ_0H$ = 10 T, and 4.2 x 10$^4$ Acm$^{-2}$ at $μ_0H$ = 14 T. These results indicate that fluoride substrates have high potential for the growth of iron-based superconductors in comparison with popular oxide substrates.

cond-mat.supr-con↗

arXiv2010

Three energy scales characterizing the competing pseudogap state, the incoherent, and the coherent superconducting state in high-Tc cuprates

We have studied the momentum dependence of the energy gap of Bi2(Sr,R)2CuOy by angleresolved photoemission spectroscopy (ARPES), particularly focusing on the difference between R=La and Eu. By comparing the gap function and characteristic temperatures between the two sets of samples, we show that there exist three distinct energy scales, Δpg, Δsc0, and Δeff sc0, which correspond to T* (pseudogap temperature), Tonset (onset temperature of fluctuating superconductivity), and Tc (critical temperature of coherent superconductivity). The results not only support the existence of a pseudogap state below T* that competes with superconductivity but also the duality of competition and superconducting fluctuation at momenta around the antinode below Tonset.

cond-mat.supr-con↗

arXiv2010

Enhancement of superconducting fluctuation under the coexistence of a competing pseudogap state in Bi2Sr2-xRxCuOy

The onset temperature of superconducting fluctuation Tonset of Bi2Sr2-xRxCuOy (R=La and Eu) was studied by measuring the Nernst effect. We found that Tonset has a x and R dependence that is quite different from both the pseudogap temperature T* and the critical temperature Tc. Our results support the picture that the incoherent superconductivity, which has been observed below Tonset, is qualitatively different from the pseudogap phenomenon that is characterized by T*. The experimentally obtained phase diagram indicates that the pseudogap state suppresses Tc and enhances superconducting fluctuation while having only small influence on Tonset.

cond-mat.supr-con↗

arXiv2010

Magnetic and Electronic Raman Scattering at the Nodal Spin-Density-Wave Transition in BaFe2As2

Two magnon excitations and the nodal spin density wave (SDW) gap were observed in BaFe2As2 by Raman scattering. Below the SDW transition temperature (TSDW) nodal SDW gap opens together with new excitations in reconstructed electronic states. The two-magnon peak remains above TSDW and moreover the energy increases a little. The change from the long-range ordered state to the short-range correlated state is compared to the cuprate superconductors.

cond-mat.supr-con↗

arXiv2010

In-situ growth of superconducting NdFeAs(O,F) thin films by Molecular Beam Epitaxy

The recently discovered high temperature superconductor F-doped LaFeAsO and related compounds represent a new class of superconductors with the highest transition temperature (Tc) apart from the cuprates. The studies ongoing worldwide are revealing that these Fe-based superconductors are forming a unique class of materials that are interesting from the viewpoint of applications. To exploit the high potential of the Fe-based superconductors for device applications, it is indispensable to establish a process that enables the growth of high quality thin films. Efforts of thin film preparation started soon after the discovery of Fe-based superconductors, but none of the earlier attempts had succeeded in an in-situ growth of a superconducting film of LnFeAs(O,F) (Ln=lanthanide), which exhibits the highest Tc to date among the Fe-based superconductors. Here, we report on the successful growth of NdFeAs(O,F) thin films on GaAs substrates, which showed well-defined superconducting transitions up to 48 K without the need of an ex-situ heat treatment.

cond-mat.supr-con↗

arXiv2009

Epitaxial Growth of NdFeAsO Thin Films by Molecular Beam Epitaxy

Epitaxial films of NdFeAsO were grown on GaAs substrates by molecular beam epitaxy (MBE). All elements including oxygen were supplied from solid sources using Knudsen cells. The x-ray diffraction pattern of the film prepared with the optimum growth condition showed no indication of impurity phases. Only (00l) peaks were observed, indicating that NdFeAsO was grown with the c-axis perpendicular to the substrate. The window of optimum growth condition was very narrow, but the NdFeAsO phase was grown with a very good reproducibility. Despite the absence of any appreciable secondary phase, the resistivity showed an increase with decreasing temperature.

cond-mat.supr-con↗