arXiv subjects

H. J. Trodahl

Publications and source records attributed to H. J. Trodahl.

31 records · Page 2Linked to original sources

arXiv2008

Raman spectroscopy of (K,Na)NbO3 and ((K,Na)1-xLix)NbO3

A Raman scattering spectroscopy study is reported through all four phases of a (K0.5Na0.5)NbO3 crystal and ((K0.5Na0.5)1-xLix)NbO3 for x=0.02 and 0.03. The transitions among the ferroelectric phases in the Li-free crystal are homogeneous and strongly hysteretic, with no evidence of a mixed-phase region between the rhombohedral and orthorhombic phases. The Raman pattern in the lowest-temperature phase in the Li-doped material differs significantly from that found for x=0 and suggest a structural phase boundary exists at for a Li concentration of less than 2%.

cond-mat.mtrl-sci↗

arXiv2008

Near-Zero Moment Ferromagnetism in the Semiconductor SmN

The magnetic behaviour of SmN has been investigated in stoichiometric polycrystalline films. All samples show ferromagnetic order with Curie temperature (T_c) of 27 +/- 3 K, evidenced by the occurrence of hysteresis below T_c. The ferromagnetic state is characterised by a very small moment and a large coercive field, exceeding even the maximum applied field of 6 T below about 15 K. The residual magnetisation at 2 K, measured after cooling in the maximum field, is 0.035 mu_B per Sm. Such a remarkably small moment results from a near cancellation of the spin and orbital contributions for Sm3+ in SmN. Coupling to an applied field is therefore weak, explaining the huge coercive field . The susceptibility in the paramagnetic phase shows temperature-independent Van Vleck and Curie-Weiss contributions. The Van Vleck contribution is in quantitative agreement with the field-induced admixture of the J=7/2 excited state and the 5/2 ground state. The Curie-Weiss contribution returns a Curie temperature that agrees with the onset of ferromagnetic hysteresis, and a conventional paramagnetic moment with an effective moment of 0.4 mu_B per Sm ion, in agreement with expectations for the crystal-field modified effective moment on the Sm3+ ions.

cond-mat.str-el↗

arXiv2008

Comparison between experiment and calculated band structures for DyN and SmN

We investigate the electronic band structure of two of the rare-earth nitrides, DyN and SmN. Resistivity measurements imply that both materials have a semiconducting ground state, and both show resistivity anomalies coinciding with the magnetic transition, despite the different magnetic states in DyN and SmN. X-ray absorption and emission measurements are in excellent agreement with LSDA+U calculations, although for SmN the calculations predict a zero band gap.

cond-mat.str-el↗

arXiv2008

Imaging a 1-electron InAs quantum dot in an InAs/InP nanowire

Nanowire heterostructures define high-quality few-electron quantum dots for nanoelectronics, spintronics and quantum information processing. We use a cooled scanning probe microscope (SPM) to image and control an InAs quantum dot in an InAs/InP nanowire, using the tip as a movable gate. Images of dot conductance vs. tip position at T = 4.2 K show concentric rings as electrons are added, starting with the first electron. The SPM can locate a dot along a nanowire and individually tune its charge, abilities that will be very useful for the control of coupled nanowire dots.

cond-mat.mes-hall↗

arXiv2008

Nonvolatile ferroelectric control of ferromagnetism in (Ga,Mn)As

There is currently much interest in materials and structures that provide coupled ferroelectric and ferromagnetic responses, with a long-term goal of developing new memories and spintronic logic elements. Within the field there is a focus on composites coupled by magnetostrictive and piezoelectric strain transmitted across ferromagnetic-ferroelectric interfaces, but substrate clamping limits the response in the supported multilayer configuration favoured for devices. This constraint is avoided in a ferroelectric-ferromagnetic bilayer in which the magnetic response is modulated by the electric field of the poled ferroelectric. Here, we report the realization of such a device using a diluted magnetic semiconductor (DMS) channel and a polymer ferroelectric gate. Polarization reversal of the gate by a single voltage pulse results in a persistent modulation of the Curie temperature as large as 5%. The device demonstrates direct and quantitatively understood electric-fieldmediated coupling in a multiferroic bilayer and may provide new routes to nanostructured DMS materials and devices via ferroelectric domain nanopatterning. The successful implementation of a polymer-ferroelectric gate fieldeffect transistor (FeFET) with a DMS channel adds a new functionality to semiconductor spintronics and may be of importance for future low-voltage spintronics devices and memory structures.

cond-mat.mtrl-sci↗

arXiv2007

Ferromagnetic redshift of the optical gap in GdN

We report measurements of the optical gap in a GdN film at temperatures from 300 to 6K, covering both the paramagnetic and ferromagnetic phases. The gap is 1.31eV in the paramagnetic phase and red-shifts to 0.9eV in the spin-split bands below the Curie temperature. The paramagnetic gap is larger than was suggested by very early experiments, and has permitted us to refine a (LSDA+U)-computed band structure. The band structure was computed in the full translation symmetry of the ferromagnetic ground state, assigning the paramagnetic-state gap as the average of the majority- and minority-spin gaps in the ferromagnetic state. That procedure has been further tested by a band structure in a 32-atom supercell with randomly-oriented spins. After fitting only the paramagnetic gap the refined band structure then reproduces our measured gaps in both phases by direct transitions at the X point.

cond-mat.str-el↗

arXiv2004

Quantitative study of molecular N_2 trapped in disordered GaN:O films

The structure of disordered GaN:O films grown by ion-assisted deposition is investigated using x-ray absorption near-edge spectroscopy and Raman spectroscopy. It is found that between 4 and 21 % of the nitrogen in the films is in the form of molecular N_2 that interacts only weakly with the surrounding matrix. The anion to cation ratio in the GaN:O host remains close to unity, and there is a close correlation between the N_2 fraction, the level of oxygen impurities, and the absence of short-range order in the GaN:O matrix.

cond-mat.mtrl-sci↗

arXiv2004

Stabilization of amorphous GaN by oxygen

Ion assisted deposition (IAD) has been investigated for the growth of GaN, and the resulting films studied by x-ray diffraction and absorption spectroscopy and by transmission electron microscopy. IAD grown stoichiometric GaN consists of random-stacked quasicrystals of some 3 nm diameter. Amorphous material is formed only by incorporation of 15% or more oxygen, which we attribute to the presence of non-tetrahedral bonds centered on oxygen. The ionic favourability of heteropolar bonds and its strikingly simple constraint to even-membered rings is the likely cause of the instability of stoichiometric a-GaN.

cond-mat.mtrl-sci↗

arXiv2003

The effect of Cu substitution on the A1g mode of La(0.7)Sr(0.3)MnO3 manganites

We report on the first Raman data of Cu substituted La(1-y)Sr(y)Mn(1-x)Cu(x)O3 (0 < x < 0.10 and 0.17 < y < 0.3, accordingly in order to have the same Mn(4+)/[Mn(4+)+Mn(3+)] ratio), collected in the frequency range 100-900 cm-1 and at room temperature, with parallel and crossed polarizations of the incident and scattered light. Spectra were fitted with a Drude-Lorentz model, and peaks at 190-220 and 430 cm-1, together with two broad structures centered at near 500 and 670 cm-1, have been found. We also have observed that the A1g mode is substantially shifted with increasing Cu substitution. The A1g phonon shift is a linear function of the tolerance factor t and the rhombohedral angle, thus following the structural changes of the MnO6 octahedra in the system.

cond-mat.mtrl-sci↗

arXiv2002

Vortex dynamics and states of artificially layered superconducting films with correlated defects

Linear resistances and $IV$-characteristics have been measured over a wide range in the parameter space of the mixed phase of multilayered a-TaGe/Ge films. Three films with varying interlayer coupling and correlated defects oriented at an angle $\approx 25$ from the film normal were investigated. Experimental data were analyzed within vortex glass models and a second order phase transition from a resistive vortex liquid to a pinned glass phase. Various vortex phases including changes from three to two dimensional behavior depending on anisotropy have been identified. Careful analysis of $IV$-characteristics in the glass phases revealed a distinctive $T$ and $H$-dependence of the glass exponent $μ$. The vortex dynamics in the Bose-glass phase does not follow the predicted behavior for excitations of vortex kinks or loops.

cond-mat.supr-con↗

arXiv2001

Gap Anisotropy, Spin Fluctuations and Normal-State Properties of the Electron Doped Superconductor Sr0.9La0.1CuO2

We report the results from a thermopower and a Cu nuclear magnetic resonance (NMR) study of the infinite CuO2 layer electron doped high temperature superconducting cuprate (HTSC), Sr0.9La0.1CuO2. We find that the temperature dependence of the thermopower, S(T), is different from that observed in the hole doped HTSC. In particular, we find that dS(T)/dT is positive above ~120 K. However, we show that S(T) can still be described by the same model developed for the hole doped HTSC and hence S(T) is not anomalous and does not imply phonon mediated pairing as has previously been suggested. The Cu NMR data reveal a Knight shift and spin lattice relaxation rate below Tc that are inconsistent with isotropic s-wave pairing. The Cu spin lattice relaxation rate in the normal state, however, is Curie-Weiss like and is comparable to that of the optimally and overdoped hole doped HTSC, La2-xSrxCuO4. The magnitude of the Knight shift indicates that the density of states at the Fermi level is anomalously small when compared with the hole doped HTSC with the same Tc, indicating that the size of the density of states at the Fermi level is of little importance in the HTSC. We find no evidence of the normal state pseudogap that is observed in the hole doped HTSC and which was recently reported to exist in the electron doped HTSC, Nd1.85Ce0.15CuO4, from infrared reflectance measurements.

cond-mat.supr-con↗

arXiv2001

Vortex dynamics in layered superconductors with correlated defects: influence of interlayer coupling

We report a detailed study of the vortex dynamics and vortex phase diagrams of two amorphous Ta_0.3Ge_0.7/Ge multilayered films with intrinsic coplanar defects, but different interlayer coupling. A pinned Bose-glass phase in the more weakly coupled sample exists only below a cross-over field H* in striking contrast to the strongly coupled film. Above H* the flux lines are thought to break up into pancake vortices and the cross-over field is significantly increased when the field is aligned along the extended defects. The two films show different vortex creep excitations in the Bose-glass phase.

cond-mat.supr-con↗

arXiv1999

On the 590cm-1 B1g feature in underdoped Bi2Sr2CaCu2O8+delta

Raman scattering studies have been performed on underdoped Bi2Sr2CaCu2O8+delta. In single crystals underdoped by oxygen removal, a 590 cm-1 peak is observed in the B1g spectrum. The feature is observed to soften in frequency by 3.8% with isotopic exchange for 16-O by 18-O. In contrast, the 590cm-1 peak is not observed in crystals underdoped by Y substitution which suggests that it correspond to a disorder induced vibrational mode. We have also found that underdoping leads to a depletion of low energy spectral weight from regions of the Fermi surface located near the Brillouin zone axes.

cond-mat.supr-con↗