arXiv subjects

H. Kumigashira

Publications and source records attributed to H. Kumigashira.

At least 19 recordsLinked to original sources

arXiv2026

Electronic phase separation and emergence of a nondimerized insulating phase in VO$_2$ $(110)_{\mathit{R}}$ ultrathin films

Using in situ photoemission spectroscopy and x-ray absorption spectroscopy, we investigated the thickness dependence of the electronic structure and V-V dimerization in VO$_2$/TiO$_2$ (110) ultrathin films, in which the one-dimensional V-V chains along the $c_{\mathit{R}}$ axis lie in the film plane. In VO$_2$ $(110)_{\mathit{R}}$ films, the reduction in dimensionality along the surface-normal direction is not expected to impose a geometric constraint on V-V dimerization, unlike in VO$_2$ $(001)_{\mathit{R}}$ films. Nevertheless, the characteristic spectral changes associated with the temperature-driven metal-insulator transition observed in thick films persist down to 1.5 nm, whereas at 1 nm an insulating electronic phase is observed without V-V dimerization. This behavior is highly similar to that reported for VO$_2$ $(001)_{\mathit{R}}$, suggesting that the enhancement of Mott instability resulting from reduced dimensionality is a common and essential driving force for the emergence of the nondimerized insulating phase in VO$_2$ ultrathin films. Meanwhile, unlike in VO$_2$ $(001)_{\mathit{R}}$, the nondimerized insulating phase in VO$_2$ $(110)_{\mathit{R}}$ coexists with the phase exhibiting the temperature-driven metal-insulator transition. Its fraction increases exponentially with decreasing thickness and becomes dominant at 1 nm. The corresponding effective critical thickness is estimated to be 2.2 nm. These results imply that the geometric orientation of the V-V chains dictates the spatial evolution of electronic phase separation via strain-mediated phase competition.

cond-mat.str-el↗

arXiv2026

Origin of multiple skyrmion phases in EuAl4

The Dzyaloshinskii-Moriya (DM) interaction has been considered essential for skyrmion formation, however, the discovery of skyrmion lattices (SkLs) in nominally centrosymmetric materials where the DM interaction is forbidden, such as Eu(Ga$_{1-x}$Al$_x$)$_4$, has challenged this established view. Recent structural investigations of Eu(Ga$_{1-x}$Al$_x$)$_4$ have further complicated this issue by revealing that the charge-density wave breaks local symmetry, theoretically allowing DM interaction. This raises a fundamental question: are the complex magnetic phases driven by the DM interaction or by alternative mechanisms? Here, using soft-x-ray angle-resolved photoemission spectroscopy, we determine the three-dimensional bulk electronic structure of Eu(Ga$_{1-x}$Al$_x$)$_4$, and elucidate the electronic origins of its rich magnetic orders. We directly observe an x-dependent Lifshitz transition leading to the emergence of a Fermi-surface pocket. Importantly, multiple nesting vectors derived from this pocket match the symmetries and periodicities of the multiple SkLs. Moreover, these nesting vectors can also account for other magnetic orders, such as the zero-field helical magnetism, suggesting a common electronic origin of the complex magnetic phases. These findings suggest that competing nesting-induced Ruderman-Kittel-Kasuya-Yosida interactions and their engineering can generate and control various SkLs and related topological spin textures.

cond-mat.str-el↗

arXiv2026

Spin-degenerate bulk bands and topological surface states associated with Dirac nodal lines in RuO2

Altermagnets are a novel platform to realize exotic electromagnetic properties distinct from those of conventional ferromagnets and antiferromagnets. We report results of micro-focused angle-resolved photoemission spectroscopy (ARPES) on RuO2, in which its altermagnetic nature has been under fierce debate in connection with crystal-orientation-dependent spintronic functionalities. By elucidating the band structure of the (100), (110) and (101) surfaces of a bulk single crystal using micro-ARPES, we found that, irrespective of the surface orientation, the experimental band structures show a good agreement with the bulk-band calculations for the nonmagnetic phase, but display a severe disagreement with those for the antiferromagnetic phase. Moreover, spin-resolved ARPES signifies a negligible spin polarization in the bulk bands, suggesting the absence of antiferromagnetism and altermagnetic spin splitting. In addition, we identified a nearly flat surface band and a dispersive one near the Fermi level at the (100)/(110) and (101) surfaces, respectively. Our first-principles calculations and analysis of Berry phase attribute these states to the topological surface bands emerging from the bulk Dirac nodal lines around the Fermi level. Our results indicate that such topological surface/interface states must be considered to understand the spintronic functionalities of RuO2, and may provide new insights into its catalytic characteristics.

cond-mat.mtrl-sci↗

arXiv2025

Translational symmetry breaking in the electronic nematic phase of BaFe2As2

The microscopic origin of the nematicity, namely, four-fold rotational symmetry breaking in iron-based superconductors has been controversial since its discovery. In particular, its relationship with the stripe-type spin-density-wave order and the orthorhombic lattice distortion in the antiferromagnetic orthorhombic (AFO) phase, which exists at temperatures below the electronic nematic phase, has been highly debated. Here, we report on the temperature evolution of angle-resolved photoemission spectra of the parent compound BaFe2As2, ranging from the AFO to nematic to paramagnetic phases. The Dirac cone feature, which is formed in the AFO phase, is found to persist in the nematic phase, suggesting that an antiferroic order of the same periodicity as the AFO phase persists in the nematic phase. Considering the relatively shallow d_xy orbital in BaFe2As2, we propose that an antiferro-orbital order involving the d_xy and other orbitals takes place in the nematic phase.

cond-mat.supr-con↗

arXiv2025

Interface-induced collective phase transition in VO2-based bilayers studied by layer selective spectroscopy

We investigated the origin of collective electronic phase transitions induced at the heterointerface between monoclinic insulating VO2 and rutile metallic electron-doped VO2 layers using in situ soft x-ray photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS) on nanoscale VO2/V0.99W0.01O2 (001)R bilayers. Thanks to the surface sensitivity of PES and XAS, we determined the changes in the electronic structure and V-V dimerization in each constituent layer separately. The layer selective observation of the electronic and crystal structures in the upper VO2 layer of the bilayer indicates that the monoclinic insulating phase VO2 layer undergoes a transition to the rutile metallic phase by forming the heterointerface. Detailed temperature-dependent measurements reveal that the rutile metallic phase VO2 undergoes a transition to the monoclinic insulating phase with a decrease in temperature, as in the case of a VO2 single-layer film. Furthermore, during the temperature-induced phase transition in the VO2 layer, the spectra are well described by an in-plane phase separation of the rutile metallic and monoclinic insulating phases. These results suggest that the interface-induced transition from the monoclinic insulating to the rutile metallic phase in the VO2 layer of bilayers occurs as a collective phase transition derived from the static energy balance between the interfacial energy and the bulk free energies of the constituent layers.

cond-mat.str-el↗

arXiv2025

Electronic structure dimensionality of the quantum-critical ferromagnet YbNi$_4$P$_2$

YbNi$_4$P$_2$ is the first known ferromagnetic metal showing a second-order quantum phase transition. Current theoretical understanding rules out second order ferromagnetic quantum criticality in centrosymmetric 2D and 3D metals. Thus, studying the electronic structure of YbNi$_4$P$_2$ is of prime fundamental importance. Using angle-resolved photoemission spectroscopy, we experimentally prove the existence of 1D Fermi surface contours. In addition, our results demonstrate that part of the electronic structure of YbNi$_4$P$_2$ is made of states of higher dimensionality, thereby bringing into question the fact that ferromagnetic quantum criticality in centrosymmetric crystals, is exclusively found in 1D systems. Our experimental data show that the electronic structure of YbNi$_4$P$_2$ is a playground of mixed dimensionality, electron correlations, strong hybridization and spin-orbit coupling, all of them providing new insights in understanding the origin of ferromagnetic quantum criticality.

cond-mat.str-el↗

arXiv2025

Out-of-phase Plasmon Excitations in the Trilayer Cuprate Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10+δ}$

Within a homologous series of cuprate superconductors, variations in the stacking of CuO$_2$ layers influence the collective charge dynamics through the long-range Coulomb interactions. We use O $K$-edge resonant inelastic x-ray scattering to reveal plasmon excitations in the optimally-doped trilayer Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10+δ}$. The observed plasmon exhibits nearly $q_z$-independent dispersion and a large excitation gap of approximately 300 meV. This mode is primarily ascribed to the $ω_{-}$ mode, where the charge density on the outer CuO$_2$ sheets oscillates out of phase while the density in the inner sheet remains unaltered at $q_z=0$. The intensity of the acoustic $ω_3$ mode is relatively weak and becomes vanishingly small near $(q_x, q_y)=(0, 0)$. This result highlights a qualitative change in the eigenmode of the dominant low-energy plasmon with the number of CuO$_2$ layers.

cond-mat.str-el↗

arXiv2023

Antiferromagnetic topological insulator with selectively gapped Dirac cones

Antiferromagnetic (AF) topological materials offer a fertile ground to explore a variety of quantum phenomena such as axion magnetoelectric dynamics and chiral Majorana fermions. To realize such intriguing states, it is essential to establish a direct link between electronic states and topology in the AF phase, whereas this has been challenging because of the lack of a suitable materials platform. Here we report the experimental realization of the AF topological-insulator phase in NdBi. By using micro-focused angle-resolved photoemission spectroscopy, we discovered contrasting surface electronic states for two types of AF domains; the surface having the out-of-plane component in the AF-ordering vector displays Dirac-cone states with a gigantic energy gap, whereas the surface parallel to the AF-ordering vector hosts gapless Dirac states despite the time-reversal-symmetry breaking. The present results establish an essential role of combined symmetry to protect massless Dirac fermions under the presence of AF order and widen opportunities to realize exotic phenomena utilizing AF topological materials.

cond-mat.mes-hall↗

arXiv2023

180$^\circ$-twisted bilayer ReSe$_2$ as an artificial noncentrosymmetric semiconductor

We have fabricated a 180$^\circ$-twisted bilayer ReSe$_2$ by stacking two centrosymmetric monolayer ReSe$_2$ flakes in opposite directions, which is expected to lose spatial inversion symmetry. By the second harmonic generation and angle-resolved photoemission spectroscopy, we successfully observed spatial inversion symmetry breaking and emergent band dispersions. The band calculation shows the finite lifting of spin degeneracy (~50 meV) distinct from natural monolayer and bilayer ReSe$_2$. Our results demonstrate that the spin-momentum locked state, which leads to spintronic functions and Berry-curvature-related phenomena, can be realized even with the stacking of centrosymmetric monolayers.

cond-mat.mes-hall↗

arXiv2023

Unconventional anomalous Hall effect in epitaxially stabilized orthorhombic Ru$^{3+}$ perovskite thin films

Complex oxides are mesmerizing material systems to realize multiple physical properties and functionalities by integrating different elements in a single compound. However, owing to the chemical instability, not all the combinations of elements can be materialized despite the intriguing potential expected from their magnetic and electronic properties. In this study, we demonstrate an epitaxial stabilization of orthorhombic Ru$^{3+}$ perovskite oxides: LaRuO$_3$ and NdRuO$_3$, and their magnetotransport properties that reflect the difference between non-magnetic La$^{3+}$ and magnetic Nd$^{3+}$. Above all, an unconventional anomalous Hall effect accompanied by an inflection point in magnetoresistance is observed around 1.3 T below 1 K for NdRuO$_3$, which is ascribed to topological Hall effect possibly due to a non-coplanar spin texture on Nd$^{3+}$ sublattice. These studies not only serve a new testbed for the interplay between spin-orbit coupling and Coulomb interaction but also open a new avenue to explore topological emergent phenomena in well-studied perovskite oxides.

cond-mat.mtrl-sci↗

arXiv2023

Oxygen on-site Coulomb energy in Pr$_{1.3-x}$La$_{0.7}$Ce$_x$CuO$_{4}$ and Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ and its relation with Heisenberg exchange

We study the electronic structure of electron-doped Pr$_{1.3-x}$La$_{0.7}$Ce$_{x}$CuO$_{4}$ (PLCCO ; $T_{c}$ = 27 K, x = 0.1) and hole-doped Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ (Bi2212 ; $T_{c}$ = 90 K) cuprate superconductors using x-ray absorption spectroscopy (XAS) and resonant photoemission spectroscopy (Res-PES). From Res-PES across the O K-edge and Cu L-edge, we identify the O 2p and Cu 3d partial density of states (PDOS) and their correlation satellites which originate in two-hole Auger final states. Using the Cini-Sawatzky method, analysis of the experimental O 2p PDOS shows an oxygen on-site Coulomb energy for PLCCO to be $U_{p}$ = 3.3$\pm$0.5 eV and for Bi2212, $U_{p}$ = 5.6$\pm$0.5 eV, while the copper on-site Coulomb correlation energy, $U_{d}$ = 6.5$\pm$0.5 eV for Bi2212. The expression for the Heisenberg exchange interaction $J$ in terms of the electronic parameters $U_{d}$, $U_{p}$, charge-transfer energy $Δ$ and Cu-O hopping $t_{pd}$ obtained from a simple Cu$_2$O cluster model is used to carry out an optimization analysis consistent with $J$ known from scattering experiments. The analysis also provides the effective one band on-site Coulomb correlation energy $\tilde{U}$ and the effective hopping $\tilde{t}$. PLCCO and Bi2212 are shown to exhibit very similar values of $\tilde{U}$/$\tilde{t}$ $\sim$9-10, confirming the strongly correlated nature of the singlet ground state in the effective one-band model for both the materials.

cond-mat.str-el↗

arXiv2023

Novel supercell compounds of layered Bi-Rh-O with $p$-type metallic conduction materialized as a thin film form

Layered oxides have been intensively studied due to their high degree of freedom in designing various electromagnetic properties and functionalities. While Bi-based layered supercell (LSC) compounds [Bi$_n$O$_{n+δ}$]-[$M$O$_2$] ($M$ = Mn, Mn/Al, Mn/Fe, or Mn/Ni; $n=2, 3$) are a group of prospective candidates, all of the reported compounds are insulators. Here, we report on the synthesis of two novel metallic LSC compounds [Bi$_{n}$O$_{n+δ}$]-[RhO$_2$] ($n=2, 3$) by pulsed laser deposition and subsequent annealing. With tuning the thickness of the sublattice from Bi$_2$O$_{2+δ}$ to Bi$_3$O$_{3+δ}$, a dimensionality-dependent electrical transport is revealed from a conventional metallic transport in $n=2$ to a localized transport in $n=3$. Our successful growth will be an important step for further exploring novel layered oxide compounds.

cond-mat.mtrl-sci↗

arXiv2022

Electronic phase diagram of Cr-doped VO2 epitaxial films studied by in situ photoemission spectroscopy

Through in situ photoemission spectroscopy (PES), we investigated the changes in the electronic structure of Cr-doped VO2 films coherently grown on TiO2 (001) substrates. The electronic phase diagram of CrxV1-xO2 is drawn by a combination of electric and spectroscopic measurements. The phase diagram is similar to that of bulk CrxV1-xO2, while the temperature of metal-insulator transition (TMIT) is significantly suppressed by the epitaxial strain effect. In the range of x = 0-0.04, where TMIT remains unchanged as a function of x, the PES spectra show dramatic change across TMIT, demonstrating the characteristic spectral changes associated with the Peierls phenomenon. In contrast, for x > 0.04, the TMIT linearly increases, and the metal-insulator transition (MIT) may disappear at x = 0.08-0.12. The PES spectra at x = 0.08 exhibit pseudogap behavior near the Fermi level, whereas the characteristic temperature-induced change remains almost intact, suggesting the existence of local V-V dimerization. The suppression of V-V dimerization with increasing x was confirmed by polarization-dependent x-ray absorption spectroscopy. These spectroscopic investigations reveal that the energy gap and V 3d states are essentially unchanged with 0 $\le$ x $\le$ 0.08 despite the suppression of V-V dimerization. The invariance of the energy gap with respect to x suggests that the MIT in CrxV1-xO2 arises primarily from the strong electron correlations, namely the Peierls-assisted Mott transition. Meanwhile, the pseudogap at x = 0.08 eventually evolves to a full gap (Mott gap) at x = 0.12, which is consistent with the disappearance of the temperature-dependent MIT in the electronic phase diagram. These results demonstrate that a Mott insulating phase without V-V dimerization is stabilized at x > 0.08 as a result of the superiority of Mott instability over the Peierls one.

cond-mat.str-el↗

arXiv2022

Modulation of magnetic property of double-perovskite La2MnCoO6 films by controlling B-antisite disorder

The predicted physical properties of double perovskites have usually been compromised by their intrinsic B-antisite (AS) disorder effect, but the relationship between them is still unclear for the La2MnCoO6 (LMCO) system. This study focuses on controlling the AS disorder and quantitatively reveals correlations with magnetic and electronic states in epitaxial LMCO films grown on (111) SrTiO3 substrates. The AS fraction was precisely controlled by tuning the growth conditions as evaluated from saturation magnetization and x-ray reflection profiles. The saturation magnetization at 5 K decreased linearly from 6 uB per formula unit by 50% as the AS fraction increased from 0 (perfectly ordered) to 0.5 (fully disordered). The x-ray absorption spectroscopy revealed that valence states of Mn and Co were 4+ (3d^3) and 2+ (3d^7), respectively, regardless of AS fraction. A local-spin-moment model is proposed to explain the net magnetizations with and without AS disorder and Mn/Co valence states, suggesting that only the rearrangement of local spin moment of Co at the antisite plays a key role in tuning the magnetism in this LMCO system.

cond-mat.mtrl-sci↗

arXiv2021

Superconducting gap and pseudogap in the surface states of the iron-based superconductor PrFeAsO$_{1-y}$ studied by angle-resolved photoemission spectroscopy

In order to study the possible superconductivity at the polar surfaces of 1111-type iron-based superconductors, which is doped with a large amount of holes in spite of the electron doping in bulk materials, we have performed angle-resolved photoemission spectroscopy (ARPES) studies on superconducting PrFeAsO$_{1-y}$~crystals. We have indeed observed the opening of a superconducting gap on surface-derived hole pockets as well as on a bulk-derived hole pocket. The superconducting gap is found to open on the surface-derived hole pockets below the bulk $T_c$, which suggests that the surface superconductivity is possibly induced by proximity effect from the bulk. We have also observed the opening of a large pseudogap on the surface-derived hole pockets, which is similar to the pseudogap in 122-type bulk superconductors doped with a smaller amount of holes. This suggests that the opening of a large pseudogap is a characteristic property of hole-doped iron-based superconductors.

cond-mat.supr-con↗

arXiv2021

Extended superconducting dome of electron-doped cuprates after protect annealing revealed by ARPES

The electron-doped cuprates are usually characterized by a more robust antiferromagnetic phase and a much narrower superconducting (SC) dome than those of the hole-doped counterparts. Recently, bulk single crystals of Pr1.3-xLa0.7CexCuO4-δ (PLCCO) prepared by the protect annealing method have been studied extensively and revealed many intriguing properties that were different from those obtained from samples annealed by the conventional methods. Here, we report on a systematic angle-resolved photoemission spectroscopy study of PLCCO single crystals after protect annealing. The results indicate that the actual electron concentration (nFS ) estimated from the Fermi-surface area is significantly larger than the Ce concentration x and the new nFS-based SC dome of PLCCO is more extended towards the overdoped side than the x-based SC dome derived for samples prepared using the conventional annealing method.

cond-mat.supr-con↗

arXiv2020

Electronic structure of a 3x3-ordered silicon layer on Al(111)

Electronic structure of the 3x3 ordered-phase of a silicon (Si) layer on Al(111) has been studied by angle resolved photoemission spectroscopy (ARPES) technique using synchrotron radiation and modeled by a trial atomic model. A closed Fermi surface originating from linearly dispersing band is identified. A band structure calculation of a trial atomic model of the honeycomb silicene on Al(111) implies that the metallic band originates from the Al-Si hybrid state that has the Dirac cone-like dispersion curves. The Si layer on Al(111) can be a model system of Xene to realize the massless electronic system through the overlayer-substrate interaction.

cond-mat.mtrl-sci↗

arXiv2020

Thickness dependence of electronic and crystal structures in VO$_2$ ultrathin films: suppression of the collaborative Mott-Peierls transition

Through ${in~situ}$ photoemission spectroscopy, we investigated the change in the electronic and crystal structures of dimensionality-controlled VO$_2$ films coherently grown on TiO$_2$(001) substrates. In the nanostructured films, the balance between the instabilities of a bandlike Peierls transition and a Mott transition is controlled as a function of thickness. The characteristic spectral change associated with temperature-driven metal-insulator transition in VO$_2$ thick films holds down to 1.5 nm (roughly corresponding to five V atoms along the [001] direction), whereas VO$_2$ films of less than 1.0 nm exhibit insulating nature without V-V dimerization. These results suggest that the delicate balance between a Mott instability and a bandlike Peierls instability is modulated at a scale of a few nanometers by the dimensional crossover effects and confinement effects, which consequently induce the complicated electronic phase diagram of ultrathin VO$_2$ films.

cond-mat.str-el↗