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H. Kumigashira

Publications and source records attributed to H. Kumigashira.

At least 73 records · Page 4Linked to original sources

Te 5p orbitals bring three-dimensional electronic structure to two-dimensional Ir0.95Pt0.05Te2

We have studied the nature of the three-dimensional multi-band electronic structure in the twodimensional triangular lattice Ir1-xPtxTe2 (x=0.05) superconductor using angle-resolved photoemission spectroscopy (ARPES), x-ray photoemission spectroscopy (XPS) and band structure calculation. ARPES results clearly show a cylindrical (almost two-dimensional) Fermi surface around the zone center. Near the zone boundary, the cylindrical Fermi surface is truncated into several pieces in a complicated manner with strong three-dimensionality. The XPS result and the band structure calculation indicate that the strong Te 5p-Te 5p hybridization between the IrTe2 triangular lattice layers is responsible for the three-dimensionality of the Fermi surfaces and the intervening of the Fermi surfaces observed by ARPES.

cond-mat.supr-con↗

Spectroscopic studies on the electronic and magnetic states of Co-doped perovskite manganite Pr0.8Ca0.2Mn1-yCoyO3 thin films

We have investigated the electronic and magnetic properties of Co-doped Pr0.8Ca0.2MnO3 thin films using various spectroscopic techniques. X-ray absorption and hard x-ray photoemission spectroscopy revealed that the substituted Co ions are in the divalent state, resulting in hole doping on the Mn atoms. Studies of element-selective magnetic properties by x-ray magnetic circular dichroism found a large orbital magnetic moment for the Co ions. These spectroscopic studies reveal that the substituted Co ions play several roles of hole doping for Mn, ferromagnetic superexchange coupling between the Co2+ and Mn4+ ions, and orbital magnetism of the Co2+ ions. Competition among these complex interactions produces the unique electronic and magnetic behaviors including enhanced coercivity of the Co-doped Pr0.8Ca0.2MnO3.

cond-mat.str-el↗

Pseudogap formation above the superconducting dome in iron-pnictides

The nature of the pseudogap in high transition temperature (high-Tc) superconducting cuprates has been a major issue in condensed matter physics. It is still unclear whether the high-Tc superconductivity can be universally associated with the pseudogap formation. Here we provide direct evidence of the existence of the pseudogap phase via angle-resolved photoemission spectroscopy in another family of high-Tc superconductor, iron-pnictides. Our results reveal a composition dependent pseudogap formation in the multi-band electronic structure of BaFe2(As1-xPx)2. The pseudogap develops well above the magnetostructural transition for low x, persists above the nonmagnetic superconducting dome for optimal x and is destroyed for x ~ 0.6, thus showing a notable similarity with cuprates. In addition, the pseudogap formation is accompanied by inequivalent energy shifts in xz/yz orbitals of iron atoms, indicative of a peculiar iron orbital ordering which breaks the four-fold rotational symmetry.

cond-mat.supr-con↗

Absence of Superconductivity in the "hole-doped" Fe pnictide Ba(Fe$_{1-x}$Mn$_{x}$)$_{2}$As$_{2}$: Photoemission and X-ray Absorption Spectroscopy Studies

We have studied the electronic structure of Ba(Fe$_{1-x}$Mn$_{x}$)$_{2}$As$_{2}$ ($x$=0.08), which fails to become a superconductor in spite of the formal hole doping like Ba$_{1-x}$K$_{x}$Fe$_{2}$As$_{2}$, by photoemission spectroscopy and X-ray absorption spectroscopy (XAS). With decreasing temperature, a transition from the paramagnetic phase to the antiferromagnetic phase was clearly observed by angle-resolved photoemission spectroscopy. XAS results indicated that the substituted Mn atoms form a strongly hybridized ground state. Resonance-photoemission spectra at the Mn $L_{3}$ edge revealed that the Mn 3d partial density of states is distributed over a wide energy range of 2-13 eV below the Fermi level ($E_F$), with little contribution around $E_F$. This indicates that the dopant Mn 3$d$ states are localized in spite of the strong Mn 3d-As $4p$ hybridization and split into the occupied and unoccupied parts due to the on-site Coulomb and exchange interaction. The absence of superconductivity in Ba(Fe$_{1-x}$Mn$_{x}$)$_{2}$As$_{2}$ can thus be ascribed both to the absence of carrier doping in the FeAs plane, and to the strong stabilizaiton of the antiferromagnetic order by the Mn impurities.

cond-mat.supr-con↗

Electronic structure of hole-doped delafossite oxides CuCr_{1-x}Mg_{x}O_{2}

We report the detailed electronic structure of a hole-doped delafossite oxide CuCr_{1-x}Mg_{x}O_{2} (0 <= x <= 0.03) studied by photoemission spectroscopy (PES), soft x-ray absorption spectroscopy (XAS), and band-structure calculations within the local-density approximation +U (LDA+U) scheme. Cr/Cu 3p-3d resonant PES reveals that the near-Fermi-level leading structure has primarily the Cr 3d character with a minor contribution from the Cu 3d through Cu 3d-O 2p-Cr 3d hybridization, having good agreement with the band-structure calculations. This indicates that a doped hole will have primarily the Cr 3d character. Cr 2p PES and L-edge XAS spectra exhibit typical Cr^{3+} features for all x, while the Cu L-edge XAS spectra exhibited a systematic change with x. This indicates now that the Cu valence is monovalent at x=0 and the doped hole should have Cu 3d character. Nevertheless, we surprisingly observed two types of charge-transfer satellites that should be attributed to Cu^{+} (3d^{10}) and Cu^{2+} (3d^{9}) like initial states in Cu 2p-3d resonant PES spectrum for at x=0, while Cu 2p PES spectra with no doubt shows the Cu^{+} character even for the lightly doped samples. We propose that these contradictory results can be understood by introducing no only the Cu 4s state, but also finite Cu 3d,4s-Cr 3d charge transfer via O 2p states in the ground-state electronic configuration.

cond-mat.str-el↗

Importance of both spin and orbital fluctuations in BaFe2(As1-xPx)2 : Evidence from superconducting gap anisotropy

In the iron pnictide superconductors, two distinct unconventional mechanisms of superconductivity have been put forth: One is mediated by spin fluctuations leading to the s+- state with sign change of superconducting gap between the hole and electron bands, and the other is orbital fluctuations which favor the s++ state without sign reversal. Here we report direct observation of peculiar momentum-dependent anisotropy in the superconducting gap from angle-resolved photoemission spectroscopy (ARPES) in BaFe2(As1-xPx)2 (Tc=30 K). The large anisotropy found only in the electron Fermi surface (FS) and the nearly isotropic gap on the entire hole FSs are together consistent with modified s+- gap with nodal loops, which can be theoretically reproduced by considering both spin and orbital fluctuations whose competition generates the gap modulation. This indicates that these two fluctuations are nearly equally important to the high-Tc superconductivity in this system.

cond-mat.supr-con↗

Strongly spin-orbit coupled two-dimensional electron gas emerging near the surface of polar semiconductors

We investigate the two-dimensional (2D) highly spin-polarized electron accumulation layers commonly appearing near the surface of n-type polar semiconductors BiTeX (X = I, Br, and Cl) by angular-resolved photoemission spectroscopy. Due to the polarity and the strong spin-orbit interaction built in the bulk atomic configurations, the quantized conduction-band subbands show giant Rashba-type spin-splitting. The characteristic 2D confinement effect is clearly observed also in the valence-bands down to the binding energy of 4 eV. The X-dependent Rashba spin-orbit coupling is directly estimated from the observed spin-split subbands, which roughly scales with the inverse of the band-gap size in BiTeX.

cond-mat.mtrl-sci↗

Self-Energy Effects on the Low- to High-Energy Electronic Structure of SrVO3

The correlated electronic structure of SrVO3 has been investigated by angle-resolved photoemission spectroscopy using in-situ prepared thin films. Pronounced features of band renormalization have been observed: a sharp kink ~60 meV below the Fermi level (EF) and a broad so-called "high-energy kink" ~0.3 eV below EF as in the high-Tc cuprates although SrVO3 does not show magnetic fluctuations. We have deduced the self-energy in a wide energy range by applying the Kramers-Kronig relation to the observed spectra. The obtained self-energy clearly shows a large energy scale of ~0.7 eV which is attributed to electron-electron interaction and gives rise to the ~0.3 eV "kink" in the band dispersion as well as the incoherent peak ~1.5eV below EF. The present analysis enables us to obtain consistent picture both for the incoherent spectra and the band renormalization.

cond-mat.str-el↗

Orientation dependence of the Schottky barrier height for La$_0.6$Sr$_0.4$MnO$_3$/SrTiO$_3$ heterojunctions

The authors report on the crystallographic orientation dependence of the Schottky properties for heterojunctions between a half-metallic ferromagnet La$_0.6$Sr$_0.4$MnO$_3$ (LSMO) and Nb-doped SrTiO3 semiconductor. The Schottky barrier height determined by in situ photoemission measurements is independent for the substrate orientations (001) and (110), while the magnetic properties of LSMO (110) films are more enhanced than for (001) films. These results suggest that the performance of magnetic devices based on ferromagnetic manganite is improved by using (110)-oriented substrates.

cond-mat.mtrl-sci↗

Madelung potentials and covalency effect in strained La$_{1-x}$Sr$_x$MnO$_3$ thin films studied by core-level photoemission spectroscopy

We have investigated the shifts of the core-level photoemission spectra of La$_{0.6}$Sr$_{0.4}$MnO$_3$ thin films grown on three kinds of substrates, SrTiO$_3$, (LaAlO$_3$)$_{0.3}$-(SrAl$_{0.5}$Ta$_{0.5}$O$_3$)$_{0.7}$, and LaAlO$_3$. The experimental shifts of the La 4d and Sr 3d core levels are almost the same as the calculation, which we attribute to the absence of covalency effects on the Madelung potentials at these atomic sites due to the nearly ionic character of these atoms. On the other hand, the experimental shifts of the O $1s$ and Mn $2p$ core levels are negligibly small, in disagreement with the calculation. We consider that this is due to the strong covalent character of the Mn-O bonds.

cond-mat.str-el↗

Systematic tight-binding analysis of ARPES spectra of transition-metal oxides

We have performed systematic tight-binding (TB) analyses of the angle-resolved photoemission spectroscopy (ARPES) spectra of transition-metal (TM) oxides A$M$O$_3$ ($M=$ Ti, V, Mn, and Fe) with the perovskite-type structure and compared the obtained parameters with those obtained from configuration-interaction (CI) cluster-model analyses of photoemission spectra. The values of $ε_d-ε_p$ from ARPES are found to be similar to the charge-transfer energy $Δ$ from O $2p$ orbitals to empty TM 3d orbitals and much larger than $Δ-U/2$ ($U$: on-site Coulomb energy) expected for Mott-Hubbard-type compounds including SrVO$_3$. $ε_d-ε_p$ values from {\it ab initio} band-structure calculations show similar behaviors to those from ARPES. The values of the $p-d$ transfer integrals to describe the global electronic structure are found to be similar in all the estimates, whereas additional narrowing beyond the TB description occurs in the ARPES spectra of the $d$ band.

cond-mat.str-el↗

Bulk-like d band of SrVO3 under a self-protective cap layer

We have performed a detailed angel-resolved photoemission spectroscopy study of in-situ prepared SrVO3 thin films. Naturally capped by a ``transparent'' protective layer, contributions from surface states centered at ~ -1.5 eV are dramatically reduced, enabling us to study the bulk V 3d states. We have observed a clear band dispersion not only in the coherent quasiparticle part but also in the incoherent part, which are reproduced by dynamical mean-field theory calculations and the spectral weight of the incoherent part is stronger within the Fermi surface.

cond-mat.str-el↗

Origin of Metallic States at Heterointerface between Band Insulators LaAlO$_3$ and SrTiO$_3$

We have studied the electronic structure at the heterointerface between the band insulators LaAlO$_3$ and SrTiO$_3$ using $in situ$ photoemission spectroscopy. Our experimental results clearly reveal the formation of a notched structure on the SrTiO$_3$ side due to band bending at the metallic LaAlO$_3$/TiO$_2$-SrTiO$_3$ interface. The structure, however, is absent at the insulating LaAlO$_3$/SrO-SrTiO$_3$ interface. The present results indicate that the metallic states originate not from the charge transfer through the interface on a short-range scale but from the accumulation of carriers on a long-range scale.

cond-mat.mtrl-sci↗

Effects of electron-phonon coupling in angle-resolved photoemission spectra of SrTiO3

We have studied the O 2p valence-band structure of Nb-doped SrTiO3, in which a dilute concentration of electrons are doped into the d0 band insulator, by angle-resolved photoemission spectroscopy (ARPES) measurements. We found that ARPES spectra at the valence band maxima at the M [k = (pi/a, pi/a, 0)]and R [k = (pi/a, pi/a, pi/a)] points start from ~ 3.3 eV below the Fermi level (EF), consistent with the indirect band gap of 3.3 eV and the EF position at the bottom of the conduction band. The peak position of the ARPES spectra were, however, shifted toward higher binding energies by ~ 500 meV from the 3.3 eV threshold. Because the bands at M and R have pure O 2p character, we attribute this ~ 500 meV shift to strong coupling of the oxygen p hole with optical phonons in analogy with the peak shifts observed for d-electron photoemission spectra in various transition-metal oxides.

cond-mat.mtrl-sci↗

In-situ photoemission study of Pr_{1-x}Ca_xMnO_3 epitaxial thin films with suppressed charge fluctuations

We have performed an {\it in-situ} photoemission study of Pr_{1-x}Ca_xMnO_3 (PCMO) thin films grown on LaAlO_3 (001) substrates and observed the effect of epitaxial strain on the electronic structure. We found that the chemical potential shifted monotonically with doping, unlike bulk PCMO, implying the disappearance of incommensurate charge fluctuations of bulk PCMO. In the valence-band spectra, we found a doping-induced energy shift toward the Fermi level (E_F) but there was no spectral weight transfer, which was observed in bulk PCMO. The gap at E_F was clearly seen in the experimental band dispersions determined by angle-resolved photoemission spectroscopy and could not be explained by the metallic band structure of the C-type antiferromagnetic state, probably due to localization of electrons along the ferromagnetic chain direction or due to another type of spin-orbital ordering.

cond-mat.str-el↗

Gradual Disappearance of the Fermi Surface near the Metal-Insulator Transition in La$_{1-x}$Sr$_{x}$MnO$_{3}$

We report the first observation of changes in the electronic structure of La$_{1-x}$Sr$_{x}$MnO$_{3}$ (LSMO) across the filling-control metal-insulator (MI) transition by means of in situ angle-resolved photoemission spectroscopy (ARPES) of epitaxial thin films. The Fermi surface gradually disappears near the MI transition by transferring the spectral weight from the coherent band near the Fermi level ($E_{F}$) to the lower Hubbard band, whereas a pseudogap behavior also exists in the ARPES spectra in the close vicinity of $E_{F}$ for the metallic LSMO. These results indicate that the spectral weight transfer derived from strong electron-electron interaction dominates the gap formation in LSMO associated with the filling-control MI transition.

cond-mat.str-el↗

Photoemission study of TiO2/VO2 interfaces

We have measured photoemission spectra of two kinds of TiO$_2$-capped VO$_2$ thin films, namely, that with rutile-type TiO$_2$ (r-TiO$_2$/VO$_2$) and that with amorphous TiO$_2$ (a-TiO$_2$/VO$_2$) capping layers. Below the Metal-insulator transition temperature of the VO$_2$ thin films, $\sim 300$ K, metallic states were not observed for the interfaces with TiO$_2$, in contrast with the interfaces between the band insulator SrTiO$_3$ and the Mott insulator LaTiO$_3$ in spite of the fact that both TiO$_2$ and SrTiO$_3$ are band insulators with $d^0$ electronic configurations and both VO$_2$ and LaTiO$_3$ are Mott insulators with $d^1$ electronic configurations. We discuss possible origins of this difference and suggest the importance of the polarity discontinuity of the interfaces. Stronger incoherent part was observed in r-TiO$_2$/VO$_2$ than in a-TiO$_2$/VO$_2$, suggesting Ti-V atomic diffusion due to the higher deposition temperature for r-TiO$_2$/VO$_2$.

cond-mat.str-el↗

Chemical potential shift and spectral weight transfer in Pr$_{1-x}$Ca$_x$MnO$_3$ revealed by photoemission spectroscopy

We have studied the chemical potential shift and changes in the electronic density of states near the Fermi level ($E_F$) as a function of carrier concentration in Pr$_{1-x}$Ca$_x$MnO$_3$ (PCMO, $0.2 \le x \le 0.65$) through the measurements of photoemission spectra. The results showed that the chemical potential shift was suppressed for $x \agt 0.3$, where the charge exchange (CE)-type antiferromagnetic charge-ordered state appears at low temperatures. We consider this observation to be related to charge self-organization such as stripe formation on a microscopic scale in this composition range. Together with the previous observation of monotonous chemical potential shift in La$_{1-x}$Sr$_x$MnO$_3$, we conclude that the tendency toward the charge self-organization increases with decreasing bandwidth. In the valence band, spectral weight of the Mn 3$d$ $e_g$ electrons in PCMO was transferred from $\sim$ 1 eV below $E_F$ to the region near $E_F$ with hole doping, leading to a finite intensity at $E_F$ even in the paramagnetic insulating phase for $x \agt 0.3$, probably related with the tendency toward charge self-organization. The finite intensity at $E_F$ in spite of the insulating transport behavior is consistent with fluctuations involving ferromagnetic metallic states.

cond-mat.str-el↗