arXiv subjects

H. Linke

Publications and source records attributed to H. Linke.

At least 19 recordsLinked to original sources

arXiv2021

Prospects for single-molecule electrostatic detection in molecular motor gliding motility assays

Molecular motor gliding motility assays based on myosin/actin or kinesin/microtubules are of interest for nanotechnology applications ranging from cargo-trafficking in lab-on-a-chip devices to novel biocomputation strategies. Prototype systems are typically monitored by expensive and bulky fluorescence microscopy systems and the development of integrated, direct electric detection of single filaments would strongly benefit applications and scale-up. We present estimates for the viability of such a detector by calculating the electrostatic potential change generated at a carbon nanotube transistor by a motile actin filament or microtubule under realistic gliding assay conditions. We combine this with detection limits based on previous state-of-the-art experiments using carbon nanotube transistors to detect catalysis by a bound lysozyme molecule and melting of a bound short-strand DNA molecule. Our results show that detection should be possible for both actin and microtubules using existing low ionic strength buffers given good device design, e.g., by raising the transistor slightly above the guiding channel floor. We perform studies as a function of buffer ionic strength, height of the transistor above the guiding channel floor, presence/absence of the casein surface passivation layer for microtubule assays and the linear charge density of the actin filaments/microtubules. We show that detection of microtubules is a more likely prospect given their smaller height of travel above the surface, higher negative charge density and the casein passivation, and may possibly be achieved with the nanoscale transistor sitting directly on the guiding channel floor.

cond-mat.mes-hall↗

arXiv2018

Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors

We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control in previous horizontal wrap-gated nanowire transistors that arise because the gate is defined by wet etching. In the method presented here gate-length control is limited by the resolution of the electron-beam-lithography process. We demonstrate the versatility of our approach by fabricating a device with an independent bottom gate, top gate, and gate-all-around structure as well as a device with three independent gate-all-around structures with 300 nm, 200 nm, and 150 nm gate length. Our method enables us to achieve sub-threshold swings as low as 38 mV/dec at 77 K for a 150 nm gate length.

physics.app-ph↗

arXiv2015

InAs nanowire transistors with multiple, independent wrap-gate segments

We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabrication steps. This is in contrast to the vertical orientation, where a significant subset of the fabrication steps needs to be repeated for each additional gate. We show that cross-talk between adjacent wrap-gate segments is negligible despite separations less than 200 nm. We also demonstrate the ability to make multiple wrap-gate transistors on a single nanowire using the exact same process. The excellent scalability potential of horizontal wrap-gate nanowire transistors makes them highly favourable for the development of advanced nanowire devices and possible integration with vertical wrap-gate nanowire transistors in 3D nanowire network architectures.

cond-mat.mes-hall↗

arXiv2014

Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors

We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices.

cond-mat.mes-hall↗

arXiv2013

Experimental verification of reciprocity relations in quantum thermoelectric transport

Symmetry relations are manifestations of fundamental principles and constitute cornerstones of modern physics. An example are the Onsager relations between coefficients connecting thermodynamic fluxes and forces, central to transport theory and experiments. Initially formulated for classical systems, these reciprocity relations are also fulfilled in quantum conductors. Surprisingly, novel relations have been predicted specifically for thermoelectric transport. However, whereas these thermoelectric reciprocity relations have to date not been verified, they have been predicted to be sensitive to inelastic scattering, always present at finite temperature. The question whether the relations exist in practice is important for thermoelectricity: whereas their existence may simplify the theory of complex thermoelectric materials, their absence has been shown to enable, in principle, higher thermoelectric energy conversion efficiency for a given material quality. Here we experimentally verify the thermoelectric reciprocity relations in a four-terminal mesoscopic device where each terminal can be electrically and thermally biased, individually. The linear response thermoelectric coefficients are found to be symmetric under simultaneous reversal of magnetic field and exchange of injection and emission contacts. Intriguingly, we also observe the breakdown of the reciprocity relations as a function of increasing thermal bias. Our measurements thus clearly establish the existence of the thermoelectric reciprocity relations, as well as the possibility to control their breakdown with the potential to enhance thermoelectric performance

cond-mat.mes-hall↗

arXiv2012

Is it the boundaries or disorder that dominates electron transport in semiconductor `billiards'?

Semiconductor billiards are often considered as ideal systems for studying dynamical chaos in the quantum mechanical limit. In the traditional picture, once the electron's mean free path, as determined by the mobility, becomes larger than the device, disorder is negligible and electron trajectories are shaped by specular reflection from the billiard walls alone. Experimental insight into the electron dynamics is normally obtained by magnetoconductance measurements. A number of recent experimental studies have shown these measurements to be largely independent of the billiards exact shape, and highly dependent on sample-to-sample variations in disorder. In this paper, we discuss these more recent findings within the full historical context of work on semiconductor billiards, and offer strong evidence that small-angle scattering at the sub-100 nm length-scale dominates transport in these devices, with important implications for the role these devices can play for experimental tests of ideas in quantum chaos.

cond-mat.mes-hall↗

arXiv2011

Lineshape of the thermopower of quantum dots

Quantum dots are an important model system for thermoelectric phenomena, and may be used to enhance the thermal-to-electric energy conversion efficiency in functional materials. It is therefore important to obtain a detailed understanding of a quantum-dot's thermopower as a function of the Fermi energy. However, so far it has proven difficult to take effects of co-tunnelling into account in the interpretation of experimental data. Here we show that a single-electron tunnelling model, using knowledge of the dot's electrical conductance which in fact includes all-order co-tunneling effects, predicts the thermopower of quantum dots as a function of the relevant energy scales, in very good agreement with experiment.

cond-mat.mes-hall↗

arXiv2011

Mesoscopic Thermovoltage Measurement Design

Quantitative thermoelectric measurements in the mesoscopic regime require accurate knowledge of temperature, thermovoltage, and device energy scales. We consider the effect of a finite load resistance on thermovoltage measurements of InAs/InP heterostructure nanowires. Load resistance and ac attenuation distort the measured thermovoltage therefore complicating the evaluation of device performance. Understanding these effects improves experimental design and data interpretation.

cond-mat.mes-hall↗

arXiv2011

Probing the Sensitivity of Electron Wave Interference to Disorder-Induced Scattering in Solid-State Devices

The study of electron motion in semiconductor billiards has elucidated our understanding of quantum interference and quantum chaos. The central assumption is that ionized donors generate only minor perturbations to the electron trajectories, which are determined by scattering from billiard walls. We use magnetoconductance fluctuations as a probe of the quantum interference and show that these fluctuations change radically when the scattering landscape is modified by thermally-induced charge displacement between donor sites. Our results challenge the accepted understanding of quantum interference effects in nanostructures.

cond-mat.mes-hall↗

arXiv2010

Signatures of Wigner Localization in Epitaxially Grown Nanowires

It was predicted by Wigner in 1934 that the electron gas will undergo a transition to a crystallized state when its density is very low. Whereas significant progress has been made towards the detection of electronic Wigner states, their clear and direct experimental verification still remains a challenge. Here we address signatures of Wigner molecule formation in the transport properties of InSb nanowire quantum dot systems, where a few electrons may form localized states depending on the size of the dot (i.e. the electron density). By a configuration interaction approach combined with an appropriate transport formalism, we are able to predict the transport properties of these systems, in excellent agreement with experimental data. We identify specific signatures of Wigner state formation, such as the strong suppression of the antiferromagnetic coupling, and are able to detect the onset of Wigner localization, both experimentally and theoretically, by studying different dot sizes.

cond-mat.mes-hall↗

arXiv2009

Measuring Temperature Gradients over Nanometer Length Scales

When a quantum dot is subjected to a thermal gradient, the temperature of electrons entering the dot can be determined from the dot's thermocurrent if the conductance spectrum and background temperature are known. We demonstrate this technique by measuring the temperature difference across a 15 nm quantum dot embedded in a nanowire. This technique can be used when the dot's energy states are separated by many kT and will enable future quantitative investigations of electron-phonon interaction, nonlinear thermoelectric effects, and the effciency of thermoelectric energy conversion in quantum dots.

cond-mat.mtrl-sci↗

arXiv2008

Enhanced Zeeman splitting in Ga0.25In0.75As quantum point contacts

The strength of the Zeeman splitting induced by an applied magnetic field is an important factor for the realization of spin-resolved transport in mesoscopic devices. We measure the Zeeman splitting for a quantum point contact etched into a Ga0.25In0.75As quantum well, with the field oriented parallel to the transport direction. We observe an enhancement of the Lande g-factor from |g*|=3.8 +/- 0.2 for the third subband to |g*|=5.8 +/- 0.6 for the first subband, six times larger than in GaAs. We report subband spacings in excess of 10 meV, which facilitates quantum transport at higher temperatures.

cond-mat.mes-hall↗

arXiv2007

Effect of time delay on feedback control of a flashing ratchet

It was recently shown that the use of feedback control can improve the performance of a flashing ratchet. We investigate the effect of a time delay in the implementation of feedback control in a closed-loop collective flashing ratchet, using Langevin dynamics simulations. Surprisingly, for a large ensemble, a well-chosen delay time improves the ratchet performance by allowing the system to synchronize into a quasi-periodic stable mode of oscillation that reproduces the optimal average velocity for a periodically flashing ratchet. For a small ensemble, on the other hand, finite delay times significantly reduce the benefit of feedback control for the time-averaged velocity, because the relevance of information decays on a time scale set by the diffusion time of the particles. Based on these results, we establish that experimental use of feedback control is realistic.

cond-mat.stat-mech↗

arXiv2007

Quantum-dot thermometry

We present a method for the measurement of a temperature differential across a single quantum dot that has transmission resonances that are separated in energy by much more than the thermal energy. We determine numerically that the method is accurate to within a few percent across a wide range of parameters. The proposed method measures the temperature of the electrons that enter the quantum dot and will be useful in experiments that aim to test theory which predicts quantum dots are highly-efficient thermoelectrics.

cond-mat.mtrl-sci↗

arXiv2006

Concept study for a high-efficiency nanowire-based thermoelectric

Materials capable of highly efficient, direct thermal-to-electric energy conversion would have substantial economic potential. Theory predicts that thermoelectric efficiencies approaching the Carnot limit can be achieved at low temperatures in one-dimensional conductors that contain an energy filter such as a double-barrier resonant tunneling structure. The recent advances in growth techniques suggest that such devices can now be realized in heterostructured, semiconductor nanowires. Here we propose specific structural parameters for InAs/InP nanowires that may allow the experimental observation of near-Carnot efficient thermoelectric energy conversion in a single nanowire at low temperature.

cond-mat.mtrl-sci↗

arXiv2005

Self-propelled film-boiling liquids

We report that liquids perform self-propelled motion when they are placed in contact with hot surfaces with asymmetric (ratchet-like) topology. The pumping effect is observed when the liquid is in the film-boiling regime, for many liquids and over a wide temperature range. We propose that liquid motion is driven by a viscous force exerted by vapor flow between the solid and the liquid.

physics.flu-dyn↗

arXiv2005

Nonlinear Effects on Quantum Interference in Electron Billiards

Magnetoconductance fluctuations are used to study the effect of an applied bias on an electron billiard. At lower bias, nonlinear effects can be well described by electron heating alone, while at higher bias (V > 2mV, ~5% of the electron Fermi energy) non-equilibrium effects become significant. At high bias, we also observe that the spectral content of the MCF is sensitive to the nonequilibrium effects. Spectral behavior is consistent with a fractal scaling of the conductance fluctuations with magnetic field, resulting in the first observation of fractal conductance fluctuations outside of the linear regime of transport.

cond-mat.mes-hall↗

arXiv2005

Experimental investigation of the breakdown of the Onsager-Casimir relations

We use magnetoconductance fluctuation measurements of phase-coherent semiconductor billiards to quantify the contributions to the nonlinear electric conductance that are asymmetric under reversal of magnetic field. We experimentally determine that the average asymmetric contribution is linear in magnetic field (for magnetic flux much larger than one flux quantum) and that its magnitude depends on billiard geometry. In addition, we find an unexpected asymmetry in the power spectrum characteristics of the magnetoconductance with respect to reversal of magnetic field and bias voltage.

cond-mat.mes-hall↗