arXiv subjects

H. Q. Xu

Publications and source records attributed to H. Q. Xu.

90 records · Page 5Linked to original sources

arXiv2014

Parity independence of the zero-bias conductance peak in a nanowire based topological superconductor-quantum dot hybrid device

We explore the signatures of Majorana fermions in a nanowire based topological superconductor-quantum dot-topological superconductor hybrid device by charge transport measurements. The device is made from an epitaxially grown InSb nanowire with two superconductor Nb contacts on a Si/SiO$_2$ substrate. At low temperatures, a quantum dot is formed in the segment of the InSb nanowire between the two Nb contacts and the two Nb contacted segments of the InSb nanowire show superconductivity due to the proximity effect. At zero magnetic field, well defined Coulomb diamonds and the Kondo effect are observed in the charge stability diagram measurements in the Coulomb blockade regime of the quantum dot. Under the application of a finite, sufficiently strong magnetic field, a zero-bias conductance peak structure is observed in the same Coulomb blockade regime. It is found that the zero-bias conductance peak is present in many consecutive Coulomb diamonds, irrespective of the even-odd parity of the quasi-particle occupation number in the quantum dot. In addition, we find that the zero-bias conductance peak is in most cases accompanied by two differential conductance peaks, forming a triple-peak structure, and the separation between the two side peaks in bias voltage shows oscillations closely correlated to the background Coulomb conductance oscillations of the device. The observed zero-bias conductance peak and the associated triple-peak structure are in line with the signatures of Majorana fermion physics in a nanowire based topological superconductor-quantum dot-topological superconductor system, in which the two Majorana bound states adjacent to the quantum dot are hybridized into a pair of quasi-particle states with finite energies and the other two Majorana bound states remain as the zero-energy modes located at the two ends of the entire InSb nanowire.

cond-mat.supr-con↗

arXiv2013

Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates

Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The transmission electron microscopy studies evidenced the substantial accumulation of Mn inside the catalyzing Ga droplets at the top of the nanowires. Optical and transport measurements revealed that the limit of Mn content for self-catalysed growth of GaAs nanowires corresponds to the doping level, i.e., is much lower than the Mn/Ga flux ratio (about 3%) used during the MBE growth. The resistivity measurements of individual nanowires confirmed that they are conductive, in accordance with the photoluminescence measurements which showed the presence of Mn2+ acceptors located at Ga sites of the GaAs host lattice of the nanowires. An anomalous temperature dependence of the photoluminescence related to excitons was demonstrated for Mn-doped GaAs nanowires.

cond-mat.mtrl-sci↗

arXiv2013

Quantized conductance and its correlation to the supercurrent in a nanowire connected to superconductors

We report conductance and supercurrent of InAs nanowires coupled to Al-superconducting electrodes with short channel lengths and good Ohmic contacts. The nanowires are suspended 15\,nm above a local gate electrode. The charge density in the nanowires can be controlled by a small change in the gate voltage. For large negative gate voltages, the number of conducting channels is reduced gradually and we observe a stepwise decrease of both conductance and critical current before the conductance vanishes completely.

cond-mat.mes-hall↗

arXiv2013

Superconductor-Nanowire Devices from Tunneling to the Multichannel Regime: Zero-Bias Oscillations and Magnetoconductance Crossover

We present transport measurements in superconductor-nanowire devices with a gated constriction forming a quantum point contact. Zero-bias features in tunneling spectroscopy appear at finite magnetic fields, and oscillate in amplitude and split away from zero bias as a function of magnetic field and gate voltage. A crossover in magnetoconductance is observed: Magnetic fields above ~ 0.5 T enhance conductance in the low-conductance (tunneling) regime but suppress conductance in the high-conductance (multichannel) regime. We consider these results in the context of Majorana zero modes as well as alternatives, including Kondo effect and analogs of 0.7 structure in a disordered nanowire.

cond-mat.mes-hall↗

arXiv2012

Observation of Majorana Fermions in a Nb-InSb Nanowire-Nb Hybrid Quantum Device

We report on the observation of excitation of Majorana fermions in a Nb-InSb nanowire quantum dot-Nb hybrid system. The InSb nanowire quantum dot is formed between the two Nb contacts by weak Schottky barriers and is thus in the regime of strong couplings to the contacts. Due to the proximity effect, the InSb nanowire segments covered by superconductor Nb contacts turn to superconductors with a superconducting energy gap $Δ^*$. Under an applied magnetic field larger than a critical value for which the Zeeman energy in the InSb nanowire is $E_z\sim Δ^*$, the entire InSb nanowire is found to be in a nontrivial topological superconductor phase, supporting a pair of Majorana fermions, and Cooper pairs can transport between the superconductor Nb contacts via the Majorana fermion states. This transport process will be suppressed when the applied magnetic field becomes larger than a second critical value at which the transition to a trivial topological superconductor phase occurs in the system. This physical scenario has been observed in our experiment. We have found that the measured zero-bias conductance for our hybrid device shows a conductance plateau in a range of the applied magnetic field in quasi-particle Coulomb blockade regions.

cond-mat.mes-hall↗

arXiv2012

Supercurrent and multiple Andreev reflections in an InSb nanowire Josephson junction

Epitaxially grown, high quality semiconductor InSb nanowires are emerging material systems for the development of high performance nanoelectronics and quantum information processing and communication devices, and for the studies of new physical phenomena in solid state systems. Here, we report on measurements of a superconductor-normal conductor-superconductor junction device fabricated from an InSb nanowire with aluminum based superconducting contacts. The measurements show a proximity induced supercurrent flowing through the InSb nanowire segment, with a critical current tunable by a gate, in the current bias configuration and multiple Andreev reflection characteristics in the voltage bias configuration. The temperature dependence and the magnetic field dependence of the critical current and the multiple Andreev reflection characteristics of the junction are also studied. Furthermore, we extract the excess current from the measurements and study its temperature and magnetic field dependences. The successful observation of the superconductivity in the InSb nanowire based Josephson junction device indicates that InSb nanowires provide an excellent material system for creating and observing novel physical phenomena such as Majorana fermions in solid state systems.

cond-mat.mes-hall↗

arXiv2011

Lineshape of the thermopower of quantum dots

Quantum dots are an important model system for thermoelectric phenomena, and may be used to enhance the thermal-to-electric energy conversion efficiency in functional materials. It is therefore important to obtain a detailed understanding of a quantum-dot's thermopower as a function of the Fermi energy. However, so far it has proven difficult to take effects of co-tunnelling into account in the interpretation of experimental data. Here we show that a single-electron tunnelling model, using knowledge of the dot's electrical conductance which in fact includes all-order co-tunneling effects, predicts the thermopower of quantum dots as a function of the relevant energy scales, in very good agreement with experiment.

cond-mat.mes-hall↗

arXiv2011

Valley-dependent Brewster angles and Goos-Hanchen effect in strained graphene

We demonstrate theoretically how local strains in graphene can be tailored to generate a valley polarized current. By suitable engineering of local strain profiles, we find that electrons in opposite valleys (K or K') show different Brewster-like angles and Goos-Hänchen shifts, exhibiting a close analogy with light propagating behavior. In a strain-induced waveguide, electrons in K and K' valleys have different group velocities, which can be used to construct a valley filter in graphene without the need for any external fields.

cond-mat.mes-hall↗

arXiv2011

Signatures of Wigner Localization in Epitaxially Grown Nanowires

It was predicted by Wigner in 1934 that the electron gas will undergo a transition to a crystallized state when its density is very low. Whereas significant progress has been made towards the detection of electronic Wigner states, their clear and direct experimental verification still remains a challenge. Here we address signatures of Wigner molecule formation in the transport properties of InSb nanowire quantum dot systems, where a few electrons may form localized states depending on the size of the dot (i.e. the electron density). By a configuration interaction approach combined with an appropriate transport formalism, we are able to predict the transport properties of these systems, in excellent agreement with experimental data. We identify specific signatures of Wigner state formation, such as the strong suppression of the antiferromagnetic coupling, and are able to detect the onset of Wigner localization, both experimentally and theoretically, by studying different dot sizes.

cond-mat.mes-hall↗

arXiv2010

Strain in Semiconductor Core-Shell Nanowires

We compute strain distributions in core-shell nanowires of zinc blende structure. We use both continuum elasticity theory and an atomistic model, and consider both finite and infinite wires. The atomistic valence force-field (VFF) model has only few assumptions. But it is less computationally efficient than the finite-element (FEM) continuum elasticity model. The generic properties of the strain distributions in core-shell nanowires obtained based on the two models agree well. This agreement indicates that although the calculations based on the VFF model are computationally feasible in many cases, the continuum elasticity theory suffices to describe the strain distributions in large core-shell nanowire structures. We find that the obtained strain distributions for infinite wires are excellent approximations to the strain distributions in finite wires, except in the regions close to the ends. Thus, our most computationally efficient model, the finite-element continuum elasticity model developed for infinite wires, is sufficient, unless edge effects are important. We give a comprehensive discussion of strain profiles. We find that the hydrostatic strain in the core is dominated by the axial strain-component, $\varepsilon_{\z \z}$. We also find that although the individual strain components have a complex structure, the hydrostatic strain shows a much simpler structure. All in-plane strain components are of similar magnitude. The non-planar off-diagonal strain-components ($\varepsilon_{\x \z}$ and $\varepsilon_{\y \z}$) are small but nonvanishing. Thus the material is not only stretched and compressed but also warped. The models used can be extended for study of wurtzite nanowire structures, as well as nanowires with multiple shells.

cond-mat.mes-hall↗

arXiv2010

Strain distributions in lattice-mismatched semiconductor core-shell nanowires

The authors study the elastic deformation field in lattice-mismatched core-shell nanowires with single and multiple shells. The authors consider infinite wires with a hexagonal cross section under the assumption of translational symmetry. The strain distributions are found by minimizing the elastic energy per unit cell using the finite element method. The authors find that the trace of the strain is discontinuous with a simple, almost piecewise variation between core and shell, whereas the individual components of the strain can exhibit complex variations.

cond-mat.mes-hall↗

arXiv2010

Correlation-induced conductance suppression at level degeneracy in a quantum dot

The large, level-dependent g-factors in an InSb nanowire quantum dot allow for the occurrence of a variety of level crossings in the dot. While we observe the standard conductance enhancement in the Coulomb blockade region for aligned levels with different spins due to the Kondo effect, a vanishing of the conductance is found at the alignment of levels with equal spins. This conductance suppression appears as a canyon cutting through the web of direct tunneling lines and an enclosed Coulomb blockade region. In the center of the Coulomb blockade region, we observe the predicted correlation-induced resonance, which now turns out to be part of a larger scenario. Our findings are supported by numerical and analytical calculations.

cond-mat.mes-hall↗

arXiv2009

Catching the zitterbewegung

We demonstrate how the zitterbewegung charge oscillations can be detected through a charge conductance measurement in a three-terminal junction. By tuning the spin-orbit interaction strength or an external magnetic field the zitterbewegung period can be modulated, translating into complementary conductance oscillations in the two outgoing leads of the junction. The proposed experimental setup is within the reach of demonstrated technology and material parameters, and enables the observation of the so far elusive zitterbewegung phenomenon.

cond-mat.mes-hall↗

arXiv2008

Spin-3/2 physics of semiconductor hole nanowires: Valence-band mixing and tunable interplay between bulk-material and orbital bound-state spin splittings

We present a detailed theoretical study of the electronic spectrum and Zeeman splitting in hole quantum wires. The spin-3/2 character of the topmost bulk-valence-band states results in a strong variation of subband-edge g factors between different subbands. We elucidate the interplay between quantum confinement and heavy-hole - light-hole mixing and identify a certain robustness displayed by low-lying hole-wire subband edges with respect to changes in the shape or strength of the wire potential. The ability to address individual subband edges in, e.g., transport or optical experiments enables the study of holes states with nonstandard spin polarization, which do not exist in spin-1/2 systems. Changing the aspect ratio of hole wires with rectangular cross-section turns out to strongly affect the g factor of subband edges, providing an opportunity for versatile in-situ tuning of hole-spin properties with possible application in spintronics. The relative importance of cubic crystal symmetry is discussed, as well as the spin splitting away from zone-center subband edges.

cond-mat.mes-hall↗

arXiv2008

Lande-like formula for the g factors of hole-nanowire subband edges

We have analyzed theoretically the Zeeman splitting of hole-quantum-wire subband edges. As is typical for any bound state, their g factor depends on both an intrinsic g factor of the material and an additional contribution arising from a finite bound-state orbital angular momentum. We discuss the quantum-confinement-induced interplay between bulk-material and orbital effects, which is nontrivial due to the presence of strong spin-orbit coupling. A compact analytical formula is provided that elucidates this interplay and can be useful for predicting Zeeman splitting in generic hole-wire geometries.

cond-mat.mes-hall↗

arXiv2008

Spin current diode based on an electron waveguide with spin-orbit interaction

We propose a spin current diode which can work even in a small applied bias condition (the linear-response regime). The prototypal device consists of a hornlike electron waveguide with Rashba spin-orbit interaction, which is connected to two leads with different widths. It is demonstrated that when electrons are incident from the narrow lead, the generated spin conductance fluctuates around a constant value in a wide range of incident energy. When the transport direction is reversed, the spin conductance is suppressed strongly. Such a remarkable difference arises from spin-flipped transitions caused by the spin-orbit interaction.

cond-mat.mes-hall↗

arXiv2006

Spin Hall effect and zitterbewegung in an electron waveguide

We study spin-resolved probability distributions for electrons in a multichannel waveguide in the presence of a spin-orbit interaction. For a spin-polarized electron injection, a zitterbewegung pattern is predicted in the probability distribution of electrons in the waveguide. For a spin-unpolarized injection, the spin-resolved electron probability in the waveguide shows spin accumulations. In addition to the spin Hall phenomenon, namely accumulations of opposite spins at the lateral edges of the waveguide, we predict the existence of a regular stripe pattern of spin accumulations in the internal region of the waveguide. We show that the predicted zitterbewegung and spin Hall effect stem from the same mechanism and are formed from coherent states of electrons in the waveguide.

cond-mat.mes-hall↗

arXiv2004

Unified treatment of fluorescence and Raman scattering processes near metal surfaces

We present a general model study of surface-enhanced resonant Raman scattering and fluorescence focusing on the interplay between electromagnetic effects and the molecular dynamics. Our model molecule is placed close to two Ag nanoparticles, and has two electronic levels. A Franck-Condon mechanism provides electron-vibration coupling. Using realistic parameter values for the molecule we find that an electromagnetic enhancement by 10 orders of magnitude can yield Raman cross-sections $σ_{R}$ of the order $10^{-14} \unit{cm^2}$. We also discuss the dependence of $σ_{R}$ on incident laser intensity.

cond-mat.other↗