arXiv subjects

H. Reichlova

Publications and source records attributed to H. Reichlova.

At least 19 recordsLinked to original sources

arXiv2025

Spin-to-charge-current conversion in altermagnetic candidate RuO$_2$ probed by terahertz emission spectroscopy

Using the THz emission spectroscopy, we investigate ultrafast spin-to-charge current conversion in epitaxial thin films of the altermagnetic candidate RuO$_2$. We perform a quantitative analysis of competing effects that can contribute to the measured anisotropic THz emission. These include the anisotropic inverse spin splitter and spin Hall effects in RuO$_2$, the anisotropic conductivity of RuO$_2$, and the birefringence of the TiO$_2$ substrate. We observe that the leading contribution to the measured signals comes from the anisotropic inverse spin Hall effect, with an average spin-Hall angle of $2.4\times 10^{-3}$ at room temperature. In comparison, a possible contribution from the altermagnetic inverse spin-splitter effect is found to be approximately $2-4\times 10^{-4}$. Our work stresses the importance of carefully disentangling spin-dependent phenomena that can be generated by the unconventional altermagnetic order, from the effects of the relativistic spin-orbit coupling.

cond-mat.mes-hall↗

arXiv2025

Altermagnetic spintronics

The research landscape of magnetism has been recently enriched by the discovery of altermagnetism. It is an unconventional phase of matter characterized by a d-wave (or higher even-parity-wave) collinear compensated spin ordering, which enables strongly spin-polarized currents in the absence of magnetization, and features fast spin dynamics. Simultaneously, on the applied magnetism front, spintronic memories based on conventional ferromagnets are currently turning from a niche to a mass produced integrated-circuit technology as they start to complement semiconductors on advanced-node microprocessor chips. Our review connects these two rapidly developing science and technology fields by discussing how the unique signatures of altermagnetism can impact the functionality and scalability of future spintronic devices. As a reference, we first briefly recall the merits and physical limitations of the present ferromagnetic spintronic technology, and of proof-of-concept spintronic devices based on conventional collinear antiferromagnets and non-collinear compensated magnets. The main part of the review then focuses on physical concepts of the altermagnetic spintronics, and its potential interplay with ferroelectricity or superconductivity. We conclude with an outlook on the nascent experimental research of altermagnetic spintronics, and on the role of relativistic phenomena.

cond-mat.mtrl-sci↗

arXiv2025

Chiral anomaly in the Weyl semimetal TaRhTe$_4$

TaRhTe$_4$ is a type-IIWeyl semimetal, exhibiting fourWeyl points in proximity to the Fermi level. In this article, we report our results of a systematic study of longitudinal magnetoresistance in TaRhTe$_4$. Our findings indicate that magnetoresistance becomes negative only when the magnetic field is applied parallel to the electric field. By rotating E (as well as B), we show that its origin is consistent with the prediction of the chiral anomaly, while the current jetting effect and weak localization could be excluded. The negative magnetoresistance persists up to room temperature, suggesting that TaRhTe4 exhibits distinctive properties within the family of Weyl semimetals.

cond-mat.str-el↗

arXiv2024

Large Nernst effect in Te-based van der Waals materials

Layered van der Waals tellurides reveal topologically non-trivial properties that give rise to unconventional magneto-transport phenomena. Additionally, their semimetallic character with high mobility makes them promising candidates for large magneto-thermoelectric effects. Remarkable studies on the very large and unconventional Nernst effect in WTe$_2$ have been reported, raising questions about whether this property is shared across the entire family of van der Waals tellurides. In this study, systematic measurements of the Nernst effect in telluride van der Waals Weyl semimetals are presented. Large linear Nernst coefficients in WTe$_2$ and MoTe$_2$ are identified, and moderate Nernst coefficients with non-linear behavior in magnetic fields are observed in W$_{0.65}$Mo$_{0.35}$Te$_2$, TaIrTe$_4$, and TaRhTe$_4$. Within this sample set, a correlation between the dominant linear-in-magnetic-field component of the Nernst coefficient and mobility is established, aligning with the established Nernst scaling framework, though with a different scaling factor compared to existing literature. This enhancement might be caused by the shared favorable electronic band structure of this family of materials. Conversely, the non-linear component of the Nernst effect in a magnetic field could not be correlated with mobility. This non-linear term is almost absent in the binary compounds, suggesting a multiband origin and strong compensation between electron-like and hole-like carriers. This comprehensive study highlights the potential of van der Waals tellurides for thermoelectric conversion.

cond-mat.mtrl-sci↗

arXiv2023

Crystal growth, characterization and electronic band structure of TiSeS

Layered semimetallic van der Waals materials TiSe2 has attracted a lot of attention because of interplay of a charge density wave (CDW) state and superconductivity. Its sister compound TiS2, being isovalent to TiSe2 and having the same crystal structure, shows a semiconducting behavior. The natural rises what happens at the transition point in TiSe2-xSx, which is expected for x close to 1. Here we report the growth and characterization of TiSeS single crystals and the study of the electronic structure using density functional theory (DFT) and angle-resolved photoemission (ARPES). We show that TiSeS single crystals have the same morphology as TiSe2. Transport measurements reveal a metallic state, no evidence of CDW was found. DFT calculations suggest that the electronic band structure in TiSeS is similar to that of TiSe2, but the electron and hole pockets in TiSeS are much smaller. The ARPES results are in good agreement with the calculations.

cond-mat.str-el↗

arXiv2022

Short-range antiferromagnetic interaction and spin-phonon coupling in La2CoMnO6 double perovskite

Weak antiferromagnetic (AF) interaction in the ferromagnetic (FM) partially ordered La2CoMnO6 (LCMO) was detected by Raman spectroscopy by monitoring spin-phonon coupling. Because of the sensibility to probe short-range disorder and lattice modifications, the Raman spectroscopy showed to be an useful tool to indicate less remarkable magnetic transitions in LCMO compound. Apart from the expected spin-phonon coupling due to the long-range FM superexchange (Tc~230 K), phonons parameters pointed out an additional spin-phonon coupling related to the short-range AF interaction at Tc~135 K, which was not detected from the magnetic bulk response. These results reinforce the Raman spectroscopy as a powerful technique to detect antisite disorder into A2B'B"O6 magnetic double perovskites, whose magnetic properties are driven by superexchange interactions.

cond-mat.mtrl-sci↗

arXiv2022

Atomic Layer Deposition of Yttrium Iron Garnet Thin Films for 3D Magnetic Structures

A wide variety of new phenomena such as novel magnetization configurations have been predicted to occur in three dimensional magnetic nanostructures. However, the fabrication of such structures is often challenging due to the specific shapes required, such as magnetic tubes and spirals. Furthermore, the materials currently used to assemble these structures are predominantly magnetic metals that do not allow to study the magnetic response of the system separately from the electronic one. In the field of spintronics, the prototypical material used for such experiments is the ferrimagnetic insulator yttrium iron garnet (Y$_3$Fe$_5$O$_{12}$, YIG). YIG is one of the best materials especially for magnonic studies due to its low Gilbert damping. Here, we report the first successful fabrication of YIG thin films via atomic layer deposition. To that end we utilize a supercycle approach based on the combination of sub-nanometer thin layers of the binary systems Fe$_2$O$_3$ and Y$_2$O$_3$ in the correct atomic ratio on Y$_3$Al$_5$O$_{12}$ substrates with a subsequent annealing step. Our process is robust against typical growth-related deviations, ensuring a good reproducibility. The ALD-YIG thin films exhibit a good crystalline quality as well as magnetic properties comparable to other deposition techniques. One of the outstanding characteristics of atomic layer deposition is its ability to conformally coat arbitrarily-shaped substrates. ALD hence is the ideal deposition technique to grant an extensive freedom in choosing the shape of the magnetic system. The atomic layer deposition of YIG enables the fabrication of novel three dimensional magnetic nanostructures, which in turn can be utilized for experimentally investigating the phenomena predicted in those structures.

cond-mat.mtrl-sci↗

arXiv2018

Magnetic anisotropy in antiferromagnetic hexagonal MnTe

Antiferromagnetic hexagonal MnTe is a promising material for spintronic devices relying on the control of antiferromagnetic domain orientations. Here we report on neutron diffraction, magnetotransport, and magnetometry experiments on semiconducting epitaxial MnTe thin films together with density functional theory (DFT) calculations of the magnetic anisotropies. The easy axes of the magnetic moments within the hexagonal basal plane are determined to be along $\left<1\bar100\right>$ directions. The spin-flop transition and concomitant repopulation of domains in strong magnetic fields is observed. Using epitaxially induced strain the onset of the spin-flop transition changes from $\sim2$~T to $\sim0.5$~T for films grown on InP and SrF$_2$ substrates, respectively.

cond-mat.mtrl-sci↗

arXiv2018

Electrically induced and detected Néel vector reversal in a collinear antiferromagnet

Electrical detection of the 180 deg spin reversal, which is the basis of the operation of ferromagnetic memories, is among the outstanding challenges in the research of antiferromagnetic spintronics. Analogous effects to the ferromagnetic giant or tunneling magnetoresistance have not yet been realized in antiferromagnetic multilayers. Anomalous Hall effect (AHE), which has been recently employed for spin reversal detection in non-collinear antiferromagnets, is limited to materials that crystalize in ferromagnetic symmetry groups. Here we demonstrate electrical detection of the 180 deg Néel vector reversal in CuMnAs which comprises two collinear spin sublattices and belongs to an antiferromagnetic symmetry group with no net magnetic moment. We detect the spin reversal by measuring a second-order magnetotransport coefficient whose presence is allowed in systems with broken space inversion symmetry. The phenomenology of the non-linear transport effect we observe in CuMnAs is consistent with a microscopic scenario combining anisotropic magneto-resistance (AMR) with a transient tilt of the Néel vector due to a current-induced, staggered spin-orbit field. We use the same staggered spin-orbit field, but of a higher amplitude, for the electrical switching between reversed antiferromagnetic states which are stable and show no sign of decay over 25 hour probing times.

cond-mat.mtrl-sci↗

arXiv2016

Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks

We investigate the thickness and temperature dependence of a series of Ni0:8Fe0:2/Ir0:2Mn0:8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet (tFM/tAFM) in order to explore the exchange coupling strengths in tunneling anisotropic magnetoresistance (TAMR) devices. Specific values of tFM/tAFM lead to four distinct scenarios with specific electric responses to moderate magnetic fields. The characteristic dependence of the measured TAMR signal on applied voltage allows us to confirm its persistence up to room temperature despite an overlapped contribution by a thermal magnetic noise.

cond-mat.mes-hall↗

arXiv2015

Optical investigation of magneto-structural phase transition in FeRh

Magneto-structural phase transition in FeRh epitaxial layers was studied optically. It is shown that the transition between the low-temperature antiferromagnetic phase and the high-temperature ferromagnetic phase is accompanied by a rather large change of the optical response in the visible and near infrared spectral ranges. This phenomenon was used to measure the phase transition temperature in FeRh films with thicknesses from 6 to 100 nm and it was observed that the hysteretic transition region broadens significantly in the thinner films.

cond-mat.mtrl-sci↗

arXiv2015

Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable alternative to ferromagnets. So far, experimental research has focused on bistable memories in antiferromagnetic metals. In the present work we demonstrate a multiple-stable memory device in epitaxial manganese telluride (MnTe) which is an antiferromagnetic counterpart of common II-VI semiconductors. Favorable micromagnetic characteristics of MnTe allow us to demonstrate a smoothly varying antiferromagnetic anisotropic magnetoresistance (AMR) with a harmonic angular dependence on the applied magnetic field, analogous to ferromagnets. The continuously varying AMR provides means for the electrical read-out of multiple-stable antiferromagnetic memory states which we set by heat-assisted magneto-recording and by changing the angle of the writing field. We explore the dependence of the magnitude of the zero-field read-out signal on the strength of the writing field and demonstrate the robustness of the antiferromagnetic memory states against strong magnetic field perturbations. We ascribe the multiple-stability in our antiferromagnetic memory to different distributions of domains with the Néel vector aligned along one of the three $c$-plane magnetic easy axes in the hexagonal MnTe film. The domain redistribution is controlled during the heat-assisted recording by the strength and angle of the writing field and freezes when sufficiently below the Néel temperature.

cond-mat.mtrl-sci↗

arXiv2014

Role of rare-earth ionic radii on the spin-phonon coupling in multiferroic ordered double perovskites

In this paper we investigated the influence of the rare-earth ionic radii on the spin-phonon coupling in RE2NiMnO6 double perovskites by Raman spectroscopy. Spin-phonon in dense Nd2NiMnO6 and Gd2NiMnO6 ceramics were investigated by Raman spectroscopy at low temperatures. The magnitude of the coupling observed in comparison with other isostructural compounds shows that it is not influenced by the rare-earth ionic radius, as well as the deviation of the position of the stretching phonon in the ferromagnetic phase with relation to the anharmonic contributions follows a power law.

cond-mat.mtrl-sci↗

arXiv2013

Spin-phonon coupling in Gd(Co1/2Mn1/2)O3 perovskite

We have investigated the temperature-dependent Raman-active phonons and the magnetic properties of Gd(Co1/2Mn1/2)O3 perovskite ceramics in the temperature range from 40 K to 300 K. The samples crystallized in an orthorhombic distorted simple perovskite, whose symmetry belongs to the Pnma space group. The data reveals spin-phonon coupling near the ferromagnetic transition occurring at around 120 K. The correlation of the Raman and magnetization data suggests that the structural order influences the magnitude of the spin-phonon coupling.

cond-mat.mtrl-sci↗

arXiv2012

Influence of Magnetic Anisotropy on Laser-induced Precession of Magnetization in Ferromagnetic Semiconductor (Ga,Mn)As

The laser-induced precession of magnetization in (Ga,Mn)As samples with different magnetic anisotropy was studied by the time-resolved magneto-optical method. We observed that the dependence of the precession amplitude on the external magnetic field depends strongly on the magnetic anisotropy of (Ga,Mn)As and we explain this phenomenon in terms of competing cubic and uniaxial anisotropies. We also show that the corresponding anisotropy fields can be deduced from the magnetic field dependence of the precession frequency.

cond-mat.mtrl-sci↗

arXiv2012

Establishing micromagnetic parameters of ferromagnetic semiconductor (Ga,Mn)As

(Ga,Mn)As is at the forefront of research exploring the synergy of magnetism with the physics and technology of semiconductors, and has led to discoveries of new spin-dependent phenomena and functionalities applicable to a wide range of material systems. Its recognition and utility as an ideal model material for spintronics research has been undermined by the large scatter in reported semiconducting doping trends and micromagnetic parameters. In this paper we establish these basic material characteristics by individually optimizing the highly non-equilibrium synthesis for each Mn-doping level and by simultaneously determining all micromagnetic parameters from one set of magneto-optical pump-and-probe measurements. Our (Ga,Mn)As thin-film epilayers, spannig the wide range of accessible dopings, have sharp thermodynamic Curie point singularities typical of uniform magnetic systems. The materials show systematic trends of increasing magnetization, carrier density, and Curie temperature (reaching 188 K) with increasing doping, and monotonous doping dependence of the Gilbert damping constant of ~0.1-0.01 and the spin stiffness of ~2-3 meVnm^2. These results render (Ga,Mn)As well controlled degenerate semiconductor with basic magnetic characteristics comparable to common band ferromagnets.

cond-mat.mtrl-sci↗

arXiv2012

Direct measurement of the three dimensional magnetization vector trajectory in GaMnAs by a magneto-optical pump-and-probe method

We report on a quantitative experimental determination of the three-dimensional magnetization vector trajectory in GaMnAs by means of the static and time-resolved pump-and-probe magneto-optical measurements. The experiments are performed in a normal incidence geometry and the time evolution of the magnetization vector is obtained without any numerical modeling of magnetization dynamics. Our experimental method utilizes different polarization dependences of the polar Kerr effect and magnetic linear dichroism to disentangle the pump-induced out-of-plane and in-plane motions of magnetization, respectively. We demonstrate that the method is sensitive enough to allow for the determination of small angle excitations of the magnetization in GaMnAs. The method is readily applicable to other magnetic materials with sufficiently strong circular and linear magneto-optical effects.

cond-mat.mtrl-sci↗

arXiv2011

Electrical measurement of antiferromagnetic moments in exchange-coupled IrMn/NiFe stacks

We employ the recently discovered antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled to NiFe. Experiments performed by common laboratory tools for magnetization and electrical transport measurements allow us to directly link the broadening of the NiFe hysteresis loop and its shift (exchange bias) to the rotation and pinning of antiferromagnetic moments in IrMn. At higher temperatures, the broadened loops show zero shift which correlates with the observation of fully rotating antiferromagnetic moments inside the IrMn film. The onset of exchange bias at lower temperatures is linked to a partial rotation between distinct metastable states and pinning of the IrMn antiferromagnetic moments in these states. The observation complements common pictures of exchange bias and reveals the presence of an electrically measurable memory effect in an antiferromagnet.

cond-mat.mtrl-sci↗