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H. S. Chang

Publications and source records attributed to H. S. Chang.

2 recordsLinked to original sources

Phase transition in Random Circuit Sampling

Undesired coupling to the surrounding environment destroys long-range correlations on quantum processors and hinders the coherent evolution in the nominally available computational space. This incoherent noise is an outstanding challenge to fully leverage the computation power of near-term quantum processors. It has been shown that benchmarking Random Circuit Sampling (RCS) with Cross-Entropy Benchmarking (XEB) can provide a reliable estimate of the effective size of the Hilbert space coherently available. The extent to which the presence of noise can trivialize the outputs of a given quantum algorithm, i.e. making it spoofable by a classical computation, is an unanswered question. Here, by implementing an RCS algorithm we demonstrate experimentally that there are two phase transitions observable with XEB, which we explain theoretically with a statistical model. The first is a dynamical transition as a function of the number of cycles and is the continuation of the anti-concentration point in the noiseless case. The second is a quantum phase transition controlled by the error per cycle; to identify it analytically and experimentally, we create a weak link model which allows varying the strength of noise versus coherent evolution. Furthermore, by presenting an RCS experiment with 67 qubits at 32 cycles, we demonstrate that the computational cost of our experiment is beyond the capabilities of existing classical supercomputers, even when accounting for the inevitable presence of noise. Our experimental and theoretical work establishes the existence of transitions to a stable computationally complex phase that is reachable with current quantum processors.

quant-ph

A single-molecule approach to ZnO defect studies: single photons and single defects

Investigations that probe defects one at a time offer a unique opportunity to observe properties and dynamics that are washed out of ensemble measurements. Here we present confocal fluorescence measurements of individual defects in Al-doped ZnO nanoparticles and undoped ZnO sputtered films that are excited with sub-bandgap energy light. Photon correlation measurements yield both antibunching and bunching, indicative of single-photon emission from isolated defects that possess a metastable shelving state. The single-photon emission is in the range 560 - 720 nm and typically exhibits two broad spectral peaks separated by approximately 150 meV. The excited state lifetimes range from 1 - 13 ns, consistent with the finite-size and surface effects of nanoparticles and small grains. We also observe discrete jumps in the fluorescence intensity between a bright state and a dark state. The dwell times in each state are exponentially distributed and the average dwell time in the bright (dark) state does (may) depend on the power of the exciting laser. Taken together, our measurements demonstrate the utility of a single-molecule approach to semiconductor defect studies and highlight ZnO as a potential host material for single-defect based applications.

cond-mat.mtrl-sci