arXiv subjects

H. T. He

Publications and source records attributed to H. T. He.

10 recordsLinked to original sources

arXiv2021

Magnetically tunable Shubnikov-de Hass oscillations in MnBi2Te4

Shubnikov-de Hass oscillations are directly observed in undoped antiferromagnetic topological insulator MnBi2Te4. With increasing magnetic fields, the oscillation period decreases gradually in the magnetic transition from canted antiferromagnetism to ferromagnetism and then saturates in high magnetic fields, indicating the field-induced evolution of the band structure. From the analysis of the high-field oscillations, a nontrivial Berry phase and a small effective mass are extracted, in agreement with the predicted Weyl semimetal phase in ferromagnetic MnBi2Te4. Furthermore, rotating the magnetization of MnBi2Te4 can lead to a splitting of the high-field oscillations, which suggests the enhanced asymmetry of the Weyl cones in tilted fields. Therefore, the observation of these magnetically tunable quantum oscillations clearly demonstrates the indispensable role of field in tuning the band structure or physical properties of MnBi2Te4.

cond-mat.mtrl-sci↗

arXiv2021

Improved limits on solar axions and bosonic dark matter from the CDEX-1B experiment using the profile likelihood ratio method

We present the improved constraints on couplings of solar axions and more generic bosonic dark matter particles using 737.1 kg-days of data from the CDEX-1B experiment. The CDEX-1B experiment, located at the China Jinping Underground Laboratory, primarily aims at the direct detection of weakly interacting massive particles using a p-type point-contact germanium detector. We adopt the profile likelihood ratio method for analysis of data in the presence of backgrounds. An energy threshold of 160 eV was achieved, much better than the 475 eV of CDEX-1A with an exposure of 335.6 kg-days. This significantly improves the sensitivity for the bosonic dark matter below 0.8 keV among germanium detectors. Limits are also placed on the coupling $g_{Ae} < 2.48 \times 10^{-11}$ from Compton, bremsstrahlung, atomic-recombination and de-excitation channels and $g^{eff}_{AN} \times g_{Ae} < 4.14 \times 10^{-17}$ from a $^{57}$Fe M1 transition at 90\% confidence level.

hep-ex↗

arXiv2020

Surface-induced linear magnetoresistance in antiferromagnetic topological insulator MnBi2Te4

Through a thorough magneto-transport study of antiferromagnetic topological insulator MnBi2Te4 (MBT) thick films, a positive linear magnetoresistance (LMR) with a two-dimensional (2D) character is found in high perpendicular magnetic fields and temperatures up to at least 260 K. The nonlinear Hall effect further reveals the existence of high-mobility surface states in addition to the bulk states in MBT. We ascribe the 2D LMR to the high-mobility surface states of MBT, thus unveiling a transport signature of surface states in thick MBT films. A suppression of LMR near the Neel temperature of MBT is also noticed, which might suggest the gap opening of surface states due to the paramagnetic-antiferromagnetic phase transition of MBT. Besides these, the failure of the disorder and quantum LMR model in explaining the observed LMR indicates new physics must be invoked to understand this phenomenon.

cond-mat.mtrl-sci↗

arXiv2020

Direct Detection Constraints on Dark Photons with CDEX-10 Experiment at the China Jinping Underground Laboratory

We report constraints on the dark photon effective kinetic mixing parameter ($κ$) with data taken from two ${p}$-type point-contact germanium detectors of the CDEX-10 experiment at the China Jinping Underground Laboratory. The 90\% confidence level upper limits on $κ$ of solar dark photon from 205.4 kg-day exposure are derived, probing new parameter space with masses (${m_V}$) from 10 to 300 eV/${c^2}$ in direct detection experiments. Considering dark photon as the cosmological dark matter, limits at 90\% confidence level with ${m_V}$ from 0.1 to 4.0 keV/${c^2}$ are set from 449.6 kg-day data, with a minimum of ${\rm{κ=1.3 \times 10^{-15}}}$ at ${\rm{m_V=200\ eV/c^2}}$.

hep-ex↗

arXiv2019

Anisotropic Landau level splitting and Lifshitz transition induced magnetoresistance enhancement in ZrTe5 crystals

Magneto-transport study has been performed in ZrTe5 single crystals. The observed Shubnikov-de Hass quantum oscillation at low temperature clearly demonstrates the existence of a nontrivial band with small effective mass in ZrTe5. Furthermore, we also revealed the 3D anisotropic nature of high-field Landau level splitting in ZrTe5, very different from the 2D behavior measured in previous transport studies. Besides these, an abnormal large enhancement of magnetoresistance appears at high temperatures, which is believed to arise from the Lifshitz transition induced two-carrier transport in ZrTe5. Our study provides more understanding of the physical properties of ZrTe5 and sheds light on potential application of ZrTe5 in spintronics.

cond-mat.mtrl-sci↗

arXiv2019

Surface-induced positive planar Hall effect in topological Kondo insulator SmB6 microribbons

Whether the surface states in SmB6 are topological is still a critical issue in the field of topological Kondo insulators. In the magneto-transport study of single crystalline SmB6 microribbons, we have revealed a positive planar Hall effect (PHE), the amplitude of which increases dramatically with decreasing temperatures but saturates below 5 K. This positive PHE is ascribed to the surface states of SmB6 and expected to arise from the anisotropy in lifting the topological protection from back-scattering by the in-plane magnetic field, thus suggesting the topological nature of surface states in SmB6. On the contrary, a negative PHE is observed for the bulk states at high temperatures, which is almost three orders of magnitudes weaker than the surface-induced positive PHE.

cond-mat.mes-hall↗

arXiv2010

Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator

Epitaxial growth of topological insulator Bi2Se3 thin films on nominally flat and vicinal Si(111) substrates is studied. In order to achieve planner growth front and better quality epifilms, a two-step growth method is adopted for the van der Waal epitaxy of Bi2Se3 to proceed. By employing vicinal Si(111) substrate surfaces, the in-pane growth rate anisotropy of Bi2Se3 is explored to achieve single crystalline Bi2Se3 epifilms, in which threading defects and twins are effectively suppressed. Optimization of the growth parameters has resulted in vicinal Bi2Se3 films showing a carrier mobility of ~ 2000 cm2V-1s-1 and the background doping of ~ 3 x 1018 cm-3 of the as-grown layers. Such samples not only show relatively high magnetoresistance but also a linear dependence on magnetic field.

cond-mat.mtrl-sci↗

arXiv2010

Origin and the role of device physics in the magnetic field effect in organic semiconductor devices

A small magnetic field (~30 mT) can effectively modulate the electroluminescence, conductance and/or photocurrent of organic semiconductor based devices, up to 10% at room temperature. This organic magnetic field effect (OMFE) is one of the most unusual phenomena of both organic electronics and, more basically, magnetism, since all device components are nonmagnetic. However, in spite of latest surge of research interest, its underlying mechanism is still hotly debated. Here we experimentally identify that the magnetic field induced increase of intersystem crossing rate (between either excitons or polaron pairs), and decrease of triplet exciton-polaron quenching rate are responsible for the observed OMFEs. The diversity of observed OMFE results, such as sign change and operating condition dependence, originates from the difference of devices physics.

cond-mat.mtrl-sci↗

arXiv2006

Spin photocurrent, its spectra dependence, and current-induced spin polarization in an InGaAs/InAlAs two-dimensional electron gas

Converse effect of spin photocurrent and current induced spin polarization are experimentally demonstrated in the same two-dimensional electron gas system with Rashba spin splitting. Their consistency with the strength of the Rashba coupling as measured from beating of the Shubnikov-de Haas oscillations reveals a unified picture for the spin photocurrent, current-induced spin polarization and spin orbit coupling. In addition, the observed spectral inversion of the spin photocurrent indicates the system with dominating structure inversion asymmetry.

cond-mat.mes-hall↗

arXiv2003

Limit cycle induced frequency locking in self-sustained current oscillations of superlattices

The ac response of self-sustained current oscillations (SSCOs) in GaAs/AlAs superlattices (SLs) is derived based on the deformation of a limit cycle under an external ac driving force. Frequency locking into an integer fraction of the ac frequency is obtained in a periodic response in which a limit cycle deforms either with or without a topological change. This frequency locking is robust against the ac bias because a limit cycle can adjust itself. The results are verified both numerically and experimentally, indicating that SSCOs in SLs can be understood within the framework of the general concepts and principles of nonlinear physics.

cond-mat.mes-hall↗