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H. Y. Liu

Publications and source records attributed to H. Y. Liu.

29 records · Page 2Linked to original sources

Photoinduced two-step insulator-metal transition in Ti4O7 by ultrafast time-resolved optical reflectivity

We report on systematic investigation of hot carrier dynamics in Ti4O7 by ultrafast time-resolved optical reflectivity. We find the transient indication for its two-step insulator-metal (I-M) transition, in which two phase transitions occur from long-range order bipolaron low-temperature insulating (LI) phase to disordered bipolaron high-temperature insulating (HI) phase at Tc1 and to free carrier metallic (M) phase at Tc2. Our results reveal that photoexcitation can effectively lower down both Tc1 and Tc2 with pump fluence increasing, allowing a light-control of I-M transition. We address a phase diagram that provides a framework for the photoinduced I-M transition and helps the potential use of Ti4O7 for photoelectric and thermoelectric devices.

cond-mat.str-el↗

Extreme timescale core-level spectroscopy with tailored XUV pulses

A new approach for few-femtosecond time-resolved photoelectron spectroscopy in condensed matter that balances the combined needs for both temporal and energy resolution is demonstrated. Here, the method is designed to investigate a prototypical Mott insulator, tantalum disulphide (1T-TaS2), which transforms from its charge-density-wave ordered Mott insulating state to a conducting state in a matter of femtoseconds. The signature to be observed through the phase transition is a charge-density-wave induced splitting of the Ta 4f core-levels, which can be resolved with sub-eV spectral resolution. Combining this spectral resolution with few-femtosecond time resolution enables the collapse of the charge ordered Mott state to be clocked. Precise knowledge of the sub-20-femtosecond dynamics will provide new insight into the physical mechanism behind the collapse and may reveal Mott physics on the timescale of electronic hopping.

physics.optics↗

Transient transition from free carrier metallic state to exciton insulating state in GaAs by ultrafast photoexcitation

We present systematic studies of the transient dynamics of GaAs by ultrafast time-resolved optical reflectivity. In photo excited non-equilibrium states, we found a sign reverse in transient reflectivity spectra $ΔR/R$ (t $>$ 0), from positive around room temperature to negative at cryogenic temperatures. The former corresponds to a transient free carrier metallic state, while the latter is attributed to an exciton insulating state, in which the transient electronic properties is mostly dominated by excitons, resulting in a transient metal-insulator transition (MIT). Two transition temperatures (T$_1$ and T$_2$) are well identified by analysing the intensity change of the time-resolved optical spectra. We found that photoexcited MIT starts emerging at T$_1$ as high as $\sim$ 230 K, in terms of a negative dip feature at 0.4 ps, and becomes stabilized below T$_2$ associated with a negative constant after 40 ps in spectra. Our results address a phase diagram that provides a framework for MIT through temperature and photoexcitation, and shed light on the understanding of light-semiconductor interaction and exciton physics.

cond-mat.str-el↗

THz-Frequency Modulation of the Hubbard U in an Organic Mott Insulator

We use midinfrared pulses with stable carrier-envelope phase offset to drive molecular vibrations in the charge transfer salt ET-F2TCNQ, a prototypical one-dimensional Mott insulator. We find that the Mott gap, which is probed resonantly with 10 fs laser pulses, oscillates with the pump field. This observation reveals that molecular excitations can coherently perturb the electronic on-site interactions (Hubbard U) by changing the local orbital wave function. The gap oscillates at twice the frequency of the vibrational mode, indicating that the molecular distortions couple quadratically to the local charge density.

cond-mat.str-el↗

Mechanism for femtosecond laser-induced periodic subwavelength structures on solid surface: surface two-plasmon resonance

We present that surface two-plasmon resonance (STPR) in electron plasma sheet produced by femtosecond laser irradiating metal surface is the self-formation mechanism of periodic subwavelength ripple structures. Peaks of overdense electrons formed by resonant two-plasmon wave pull bound ions out of the metal surface and thus the wave pattern of STPR is "carved" on the surface by Coulomb ablation (removal) resulting from the strong electrostatic field induced by charge separation. To confirm the STPR model, we have performed analogical carving experiments by two laser beams with perpendicular polarizations. The results explicitly show that two wave patterns of STPR are independently carved on the exposure area of target surface. The time-scale of ablation dynamics and the electron temperature in ultrafast interaction are also verified by time-resolved spectroscopy experiment and numerical simulation, respectively. The present model can self-consistently explain the formation of subwavelength ripple structures even with spatial periods shorter than half of the laser wavelength, shedding light on the understanding of ultrafast laser-solid interaction.

cond-mat.other↗

Optically induced coherent transport far above Tc in underdoped YBa2Cu3O6+x

We report on a photo-induced transient state of YBa2Cu2O6+x in which transport perpendicular to the Cu-O planes becomes highly coherent. This effect is achieved by excitation with mid-infrared optical pulses, tuned to the resonant frequency of apical oxygen vibrations, which modulate both lattice and electronic properties. Below the superconducting transition temperature Tc, the equilibrium signatures of superconducting interlayer coupling are enhanced. Most strikingly, the optical excitation induces a new reflectivity edge at higher frequency than the equilibrium Josephson plasma resonance, with a concomitant enhancement of the low frequency imaginary conductivity. Above Tc, the incoherent equilibrium conductivity becomes highly coherent, with the appearance of a reflectivity edge and a positive imaginary conductivity that increases with decreasing frequency. These features are observed up to room temperature in YBa2Cu2O6.45 and YBa2Cu2O6.5. The data above Tc can be fitted by hypothesizing that the light re-establishes a transient superconducting state over only a fraction of the solid, with a lifetime of a few picoseconds. Non-superconducting transport could also explain these observations, although one would have to assume transient carrier mobilities near 10^4 cm^2/(V.sec) at 100 K, with a density of charge carriers similar to the below Tc superfluid density. Our results are indicative of highly unconventional non-equilibrium physics and open new prospects for optical control of complex solids.

cond-mat.supr-con↗

Possible observation of parametrically amplified coherent phasons in K0.3MoO3 using time-resolved extreme-ultraviolet ARPES

We use time- and angle-resolved photoemission spectroscopy (tr-ARPES) in the Extreme Ultraviolet (EUV) to measure the time- and momentum-dependent electronic structure of photo-excited K0.3MoO3. Prompt depletion of the Charge Density Wave (CDW) condensate launches coherent oscillations of the amplitude mode, observed as a 1.7-THz-frequency modulation of the bonding band position. In contrast, the anti-bonding band oscillates at about half this frequency. We attribute these oscillations to coherent excitation of phasons via parametric amplification of phase fluctuations.

cond-mat.str-el↗

Effect of the GaAsP shell on optical properties of self-catalyzed GaAs nanowires grown on silicon

We realize growth of self-catalyzed core-shell GaAs/GaAsP nanowires (NWs) on Si substrates using molecular-beam epitaxy. Transmission electron microscopy (TEM) of single GaAs/GaAsP NWs confirms their high crystal quality and shows domination of the zinc-blende phase. This is further confirmed in optics of single NWs, studied using cw and time-resolved photoluminescence (PL). A detailed comparison with uncapped GaAs NWs emphasizes the effect of the GaAsP capping in suppressing the non-radiative surface states: significant PL enhancement in the core-shell structures exceeding 2000 times at 10K is observed; in uncapped NWs PL is quenched at 60K whereas single core-shell GaAs/GaAsP NWs exhibit bright emission even at room temperature. From analysis of the PL temperature dependence in both types of NW we are able to determine the main carrier escape mechanisms leading to the PL quench.

cond-mat.mtrl-sci↗

Vacancy-tuned paramagnetic/ferromagnetic martensitic transformation in Mn-poor Mn_{1-x}CoGe alloys

It is shown that a temperature window between the Curie temperatures of martensite and austenite phases around the room temperature can be obtained by a vacancy-tuning strategy in Mn-poor Mn1-xCoGe alloys (0 <= x <= 0.050). Based on this, a martensitic transformation from paramagnetic austenite to ferromagnetic martensite with a large magnetization difference can be realized in this window. This gives rise to a magnetic-field-induced martensitic transformation and a large magnetocaloric effect in the Mn1-xCoGe system. The decrease of the transformation temperature and of the thermal hysteresis of the transformation, as well as the stable Curie temperatures of martensite and austenite, are discussed on the basis of the Mn-poor Co-vacancy structure and the corresponding valence-electron concentration.

cond-mat.mtrl-sci↗

Fast optical preparation, control and read-out of single quantum dot spin

We propose and demonstrate the sequential initialization, optical control, and read-out of a single spin trapped in a semiconductor quantum dot. Hole spin preparation is achieved through ionization of a resonantly excited electron-hole pair. Optical control is observed as a coherent Rabi rotation between the hole and charged exciton states, which is conditional on the initial hole spin state. The spin-selective creation of the charged exciton provides a photocurrent read-out of the hole spin state.

cond-mat.mes-hall↗

Two qubit conditional quantum logic operation in a single self-assembled quantum dot

The four-level exciton/biexciton system of a single semiconductor quantum dot acts as a two qubit register. We experimentally demonstrate an exciton-biexciton Rabi rotation conditional on the initial exciton spin in a single InGaAs/GaAs dot. This forms the basis of an optically gated two-qubit controlled-rotation (CROT) quantum logic operation where an arbitrary exciton spin is selected as the target qubit using the polarization of the control laser.

cond-mat.mes-hall↗