Quantum Study of Dispersion-Corrected Electronic and Optical Properties of syn- and anti- B18H22 Clusters with/without Sulfur Doping for Tunable Optoelectronics
This study presents a detailed quantum chemical investigation of the electronic and excited-state properties of syn- and anti-isomers of the borane cluster B18H22 and their sulfur-doped derivatives. Using the PB86/def2-SVP level of theory with dispersion corrections, the research examines how sulfur substitution and non-covalent interactions influence cluster stability, electronic structure, spectra, and optoelectronic potential. Comparative analysis of the syn- and anti-isomers reveals the impact of molecular conformation on frontier molecular orbitals and related energetic and photophysical properties. Sulfur doping is shown to enhance charge delocalization, stabilize excited states, and improve thermal stability, which form key factors for tunable laser applications. The inclusion of advanced dispersion correction methods proves essential for accurately capturing many-body interactions that govern electronic behavior. By elucidating the interplay between structural features, substitution patterns, and computational modeling, the work provides valuable insights into structure-property relationships critical for designing borane-based materials with tailored optoelectronic and thermal characteristics. In addition to doping and dispersion effects, functionals' effects were examined through comparison amidst various ones with different asymptotic exchange on excitation and gap energies. In summary, the computational methodology combined good DFT/Basis/dispersion set to accurately predict geometries, IR/UV spectra, NMR chemical shifts, dipole moments, polarizability and excited-state properties, thereby offering a comprehensive theoretical understanding of syn-, anti- isomers of B18H22 and its sulfur doped variants.