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Hai-Ping Cheng

Publications and source records attributed to Hai-Ping Cheng.

At least 55 records · Page 3Linked to original sources

Three Jahn-Teller states of matter in the spin-crossover system Mn(taa)

Three high-spin phases recently discovered in the spin-crossover system Mn(taa) are identified through analysis by a combination of first-principles calculations and Monte Carlo simulation as a low-temperature Jahn-Teller ordered (solid) phase, an intermediate-temperature dynamically correlated (liquid) phase, and an uncorrelated (gas) phase. In particular, the Jahn-Teller liquid phase arises from competition between mixing with low-spin impurities, which drive the disorder, and inter-molecular strain interactions. The latter are a key factor in both the spin-crossover phase transition and the magnetoelectric coupling. Jahn-Teller liquids may exist in other spin-crossover materials and materials that have multiple equivalent Jahn-Teller axes.

cond-mat.mtrl-sci↗

Theoretical Prediction of Magnetic Exchange Coupling Constants from Broken-Symmetry Coupled Cluster Calculations

Exchange coupling constants ($J$) are fundamental to the understanding of spin spectra of magnetic systems. Here we investigate the broken-symmetry (BS) approaches of Noodleman and Yamaguchi in conjunction with coupled cluster (CC) methods to obtain exchange couplings. $J$ values calculated from CC in this fashion converge smoothly towards the FCI result with increasing level of CC excitation. We compare this BS-CC scheme to the complementary EOM-CC approach on a selection of bridged molecular cases and give results from a few other methodologies for context.

physics.chem-ph↗

Exploring the magnetic properties of the largest single molecule magnets

The giant $\{ \mathrm{Mn}_{70} \}$ and $\{ \mathrm{Mn}_{84} \}$ wheels are the largest nuclearity single-molecule magnets synthesized to date and understanding their magnetic properties poses a challenge to theory. Starting from first principles calculations, we explore the magnetic properties and excitations in these wheels using effective spin Hamiltonians. We find that the unusual geometry of the superexchange pathways leads to weakly coupled $\{ \mathrm{Mn}_{7} \}$ subunits carrying an effective $S=2$ spin. The spectrum exhibits a hierarchy of energy scales and massive degeneracies, with the lowest energy excitations arising from Heisenberg-ring-like excitations of the $\{ \mathrm{Mn}_{7} \}$ subunits around the wheel, at energies consistent with the observed temperature dependence of the magnetic susceptibility. We further suggest an important role for weak longer-range couplings in selecting the precise spin ground-state of the $\mathrm{Mn}$ wheels out of the nearly degenerate ground-state band.

physics.chem-ph↗

Analysis of exchange interactions in dimers of Mn3 single-molecule magnets, and their sensitivity to external pressure

In light of the potential use of single-molecule magnets (SMMs) in emerging quantum information science initiatives, we report first-principles calculations of the magnetic exchange interactions in [$\mathrm{Mn}_{3}$]$_{2}$ dimers of $\mathrm{Mn}_3$ SMMs, connected by covalently-attached organic linkers, that have been synthesized and studied experimentally by magnetochemistry and EPR spectroscopy. Energy evaluations calibrated to experimental results give the sign and order of magnitude of the exchange coupling constant ($J_{12}$) between the two $\mathrm{Mn}_{3}$ units that match with fits of magnetic susceptibility data and EPR spectra. Downfolding into the $\mathrm{Mn}$ $d$-orbital basis, Wannier function analysis has shown that magnetic interactions can be channeled by ligand groups that are bonded by van der Waals interaction and/or by the linkers via covalent bonding of specific systems, and effective tight-binding Hamiltonians are obtained. We call this long-range coupling that involves a group of atoms a collective exchange. Orbital projected spin density of states and alternative Wannier transformations support this observation. To assess the sensitivity of $J_{12}$ to external pressure, stress-strain curves have been investigated for both hydrostatic and uniaxial pressure, which have revealed a switch of $J_{12}$ from ferromagnetic to antiferromagnetic with increasing pressure.

cond-mat.mtrl-sci↗

Decoherence in Molecular Electron Spin Qubits: Insights from Quantum Many-Body Simulations

Quantum states are described by wave functions whose phases cannot be directly measured, but which play a vital role in quantum effects such as interference and entanglement. The loss of the relative phase information, termed decoherence, arises from the interactions between a quantum system and its environment. Decoherence is perhaps the biggest obstacle on the path to reliable quantum computing. Here we show that decoherence occurs even in an isolated molecule although not all phase information is lost via a theoretical study of a central electron spin qubit interacting with nearby nuclear spins in prototypical magnetic molecules. The residual coherence, which is molecule-dependent, provides a microscopic rationalization for the nuclear spin diffusion barrier proposed to explain experiments. The contribution of nearby molecules to the decoherence has a non-trivial dependence on separation, peaking at intermediate distances. Molecules that are far away only affect the long-time behavior. Because the residual coherence is simple to calculate and correlates well with the coherence time, it can be used as a descriptor for coherence in magnetic molecules. This work will help establish design principles for enhancing coherence in molecular spin qubits and serve to motivate further theoretical work.

physics.chem-ph↗

Self-Consistent Effective Hamiltonian Theory for Fermionic Many Body Systems

Using a separable many-body variational wavefunction, we formulate a self-consistent effective Hamiltonian theory for fermionic many-body system. The theory is applied to the two-dimensional Hubbard model as an example to demonstrate its capability and computational effectiveness. Most remarkably for the Hubbard model in 2-d, a highly unconventional quadruple-fermion non-Cooper-pair order parameter is discovered.

cond-mat.str-el↗

DFT Calculations of Temperature-Dependent NQR Parameters in α-paradichlorobenzene and β-HMX

A method for first principles predictions of observed temperature-dependent NQR spectra is presented using density functional theory (DFT) and the isobaric T-dependent NQR frequencies of 35Cl and 14N nuclei are computed for the two molecular crystals (1) alpha-paradichlorobenzene, and (2) the nitroamine high explosive beta-HMX (beta-octahydro-1,3,5,7-tetranitro-1,3,5,7-tetrazocine) over a range of 200 K and up to room temperature. Notably, the method requires no supposition of a form for the intermolecular potentials or wave functions, requires no particular insight as to the nature of the internal motions or of the chemical bonds present, and does not depend on the crystal structure, making the method amenable to any periodic solid for which experimentally determined structural data are available. For each substance, unit cells of various volume are prepared using experimentally determined atomic positions and cell parameters. In each of the prepared volume-corrected cells, a molecular dynamics (MD) simulation generates a set of perturbed atomic positions, the collection of which is intended to represent the system at a given T,V. For each configuration of atoms generated along the MD trajectory, the electric field gradient (EFG) tensors are computed at the site of each quadrupolar nucleus. The rotational displacements of the moving EFG principal axes from their equilibrium directions are used to apply a dynamic correction to the DFT-computed static-lattice NQR frequencies, resulting in first-principles DFT predictions of T-dependent NQR spectra at constant pressure. Because the V-dependence from thermal expansion and the T-dependence due to internal motions are simultaneously considered, the NQR's notoriously model-dependent temperature coefficients are computed entirely ab-initio.

cond-mat.mtrl-sci↗

DFT+DMFT calculations of the complex band and tunneling behavior for the transition metal monoxides MnO, FeO, CoO and NiO

We report complex band structure (CBS) calculations for the four late transition metal monoxides, MnO, FeO, CoO and NiO, in their paramagnetic phase. The CBS is obtained from density functional theory plus dynamical mean field theory (DMFT) calculations to take into account correlation effects. The so-called $β$ parameters, governing the exponential decay of the transmission probability in the non-resonant tunneling regime of these oxides, are extracted from the CBS. Different model constructions are examined in the DMFT part of the calculation. The calculated $β$ parameters provide theoretical estimation for the decay length in the evanescent channel, which would be useful for tunnel junction applications of these materials.

cond-mat.str-el↗

Multi-Control Over Graphene-Molecule Hetereo-Junctions

The vertical configuration is a powerful tool recently developed experimentally to investigate field effects in quasi 2D systems. Prototype graphene-based vertical tunneling transistors can achieve an extraordinary control over current density utilizing gate voltages. In this work we study theoretically vertical tunneling junctions that consist of a monolayer of photo-switchable aryl-azobenzene molecules of sandwiched between two sheets of graphene. Azobenzene molecules transform between {\it trans} and {\it cis} conformations upon photoexcitation, thus adding a second knob that enhances control over physical properties of the junction. Using first-principles methods within the density functional framework, we perform simulations with the inclusion of field effects for both {\it trans} and {\it cis} configurations. We find that the interference of interface states resulting from molecule-graphene interactions at the Fermi energy introduces a dual-peak pattern in the transmission functions and dominates the transport properties of gate junctions, shedding new light on interfacial processes.

cond-mat.mes-hall↗

Tunneling Field-Effect Junctions with WS$_2$ barrier

Transition metal dichalcogenides (TMDCs), with their two-dimensional structures and sizable bandgaps, are good candidates for barrier materials in tunneling field-effect transistor (TFET) formed from atomic precision vertical stacks of graphene and insulating crystals of a few atomic layers in thickness. We report first-principles study of the electronic properties of the Graphene/WS$_2$/Graphene sandwich structure revealing strong interface effects on dielectric properties and predicting a high ON/OFF ratio with an appropriate WS$_2$ thickness and a suitable range of the gate voltage. Both the band spin-orbit coupling splitting and the dielectric constant of the WS$_2$ layer depend on its thickness when in contact with the graphene electrodes, indicating strong influence from graphene across the interfaces. The dielectric constant is significantly reduced from the bulk WS$_2$ value. The effective barrier height varies with WS$_2$ thickness and can be tuned by a gate voltage. These results are critical for future nanoelectronic device designs.

cond-mat.mtrl-sci↗

Ferroelectricity in $\mathbf{BiMnO_3}$ Thin Films

The existence of ferroelectricity in {$\mathrm{BiMnO}_3$} has been a long-standing question for both experimentalists and theorists. In addition to a highly distorted bulk structure, the ionic crystal planes cause a large roughness in thin films that makes it extremely difficult to nail down the physical mechanisms underlying a possible ferroelectric-ferromagnetic phase. We approach the problem by including the substrate explicitly to study the polarization. With this model, we investigate mono-, di-, and trilayer {$\mathrm{BiMnO}_3$} thin films on $\mathrm{SrTiO}_3$ substrates. We find that thin film systems have both strong ferromagnetism and strong ferroelectricity. Substrate constraints weaken the competition between displacements induced by stereochemically active Bi-$6s^2$ lone pairs and by Jahn-Teller distortions around Mn ions found in the bulk, such that the sum of off-center displacements of Bi ions in bulk {$\mathrm{BiMnO}_3$} nearly cancel. In {$\mathrm{BiMnO}_3$} thin films, in contrast, all Bi ions displace roughly in parallel, resulting in a strongly polar structure. We also find spontaneous charge disproportionation of Mn ion pairs in {$\mathrm{BiMnO}_3$} thin films.

cond-mat.mtrl-sci↗

All-electron self-consistent GW in the Matsubara-time domain: implementation and benchmarks of semiconductors and insulators

The GW approximation is a well-known method to improve electronic structure predictions calculated within density functional theory. In this work, we have implemented a computationally efficient GW approach that calculates central properties within the Matsubara-time domain using the modified version of Elk, the full-potential linearized augmented plane wave (FP-LAPW) package. Continuous-pole expansion (CPE), a recently proposed analytic continuation method, has been incorporated and compared to the widely used Pade approximation. Full crystal symmetry has been employed for computational speedup. We have applied our approach to 18 well-studied semiconductors/insulators that cover a wide range of band gaps computed at the levels of single-shot G0W0, partially self-consistent GW0, and fully self-consistent GW (scGW). Our calculations show that G0W0 leads to band gaps that agree well with experiment for the case of simple s-p electron systems, whereas scGW is required for improving the band gaps in 3-d electron systems. In addition, GW0 almost always predicts larger band gap values compared to scGW, likely due to the substantial underestimation of screening effects. Both the CPE method and Pade approximation lead to similar band gaps for most systems except strontium titantate, suggesting further investigation into the latter approximation is necessary for strongly correlated systems. Our computed band gaps serve as important benchmarks for the accuracy of the Matsubara-time GW approach.

cond-mat.mtrl-sci↗

Electronic resistances of multilayered two-dimensional crystal junctions

We carry out a layer-by-layer investigation to understand electron transport across metal-insulator-metal junctions. Interfacial structures of junctions were studied and characterized using first-principles density functional theory within the generalized gradient approximation. We found that as a function of the number of crystal layers the calculated transmission coefficients of multilayer silicene junctions decay much slower than for BN-based junctions We revisited the semiclassical Boltzmann theory of electronic transport and applied to multilayer silicene and BN-based junctions. The calculated resistance in the high-transmission regime is smaller than that provided by the Landauer formula. As the thickness of the barrier increases, results from the Boltzmann and the Landauer formulae converge. We provide a upper limit in the transmission coefficient below which, the Landauer method becomes valid. Quantitatively, when the transmission coefficient is lower than $ \sim 0.05 $ per channel, the error introduced by the Landauer formula for calculating the resistance is negligible. In addition, we found that the resistance of a junction is not entirely determined by the averaged transmission, but also by the distribution of the transmission over the first Brillouin zone.

cond-mat.mes-hall↗

First-principles Simulations of a Graphene Based Field-Effect Transistor

We improvise a novel approach to carry out first-principles simulations of graphene-based vertical field effect tunneling transistors that consist of a graphene$|${\it h}-BN$|$graphene multilayer structure. Within the density functional theory framework, we exploit the effective screening medium (ESM) method to properly treat boundary conditions for electrostatic potentials and investigate the effect of gate voltage. The distribution of free carriers and the band structure of both top and bottom graphene layers are calculated self-consistently. The dielectric properties of {\it h}-BN thin films sandwiched between graphene layers are computed layer-by-layer following the theory of microscopic permittivity. We find that the permittivities of BN layers are very close to that of crystalline {\it h}-BN. The effect of interface with graphene on the dielectric properties of {\it h}-BN is weak, according to an analysis on the interface charge redistribution.

cond-mat.mtrl-sci↗

Preventing rapid energy loss from electron-hole pairs to phonons in graphene quantum dots

In semiconductors, photoexcited electrons and holes (carriers) initially occupy high-energy states, but quickly lose energy to phonons and relax to the band edge within a picosecond [1]. Increasing the lifetime of carriers in light-absorbing materials is necessary to improve open-circuit voltage in photovoltaics [2], charge separation in organic solar cells [3], and charge transfer in photodetection de vices [4]. Here we demonstrate long lifetimes over one hundred picoseconds for electron-hole pairs in graphene quantum dots (GQDs) due to large transition energies and weak coupling to excitonic states below the fundamental band gap. This possibility for a large transition energy to bound excitons is due to graphene's poor screening, illustrating a unique mechanism in this QD to occupy higher-energy states for long timescales. GQD edges can be terminated with either armchair or zigzag carbon patterns, and this edge structure changes excited state lifetimes by orders of magnitude. These results indicate nanoscale control of carrier lifetimes in optoelectronics.

cond-mat.mtrl-sci↗

Electron transport in graphene/graphene side-contact junction by plane-wave multiple scattering method

Electron transport in graphene is along the sheet but junction devices are often made by stacking different sheets together in a "side-contact" geometry which causes the current to flow perpendicular to the sheets within the device. Such geometry presents a challenge to first-principles transport methods. We solve this problem by implementing a plane-wave based multiple scattering theory for electron transport. This implementation improves the computational efficiency over the existing plane-wave transport code, scales better for parallelization over large number of nodes, and does not require the current direction to be along a lattice axis. As a first application, we calculate the tunneling current through a side-contact graphene junction formed by two separate graphene sheets with the edges overlapping each other. We find that transport properties of this junction depend strongly on the AA or AB stacking within the overlapping region as well as the vacuum gap between two graphene sheets. Such transport behaviors are explained in terms of carbon orbital orientation, hybridization, and delocalization as the geometry is varied.

physics.comp-ph↗

All-Electron GW Quasiparticle Band Structures of Group 14 Nitride Compounds

We have investigated the group 14 nitrides (M$_3$N$_4$) in the spinel phase ($γ$-M$_3$N$_4$ with M= C, Si, Ge and Sn) and $β$ phase ($β$-M$_3$N$_4$ with M= Si, Ge and Sn) using density functional theory with the local density approximation and the GW approximation. The Kohn-Sham energies of these systems have been first calculated within the framework of full-potential linearized augmented plane waves and then corrected using single-shot G$_0$W$_0$ calculations, which we have implemented in the modified version of the Elk full-potential LAPW code. Direct band gaps at the $Γ$ point have been found for spinel-type nitrides $γ$-M$_3$N$_4$ with M= Si, Ge and Sn. The corresponding GW-corrected band gaps agree with experiment. We have also found that the GW calculations with and without the plasmon-pole approximation give very similar results, even when the system contains semi-core $d$ electrons. These spinel-type nitrides are novel materials for potential optoelectronic applications because of their direct and tunable band gaps.

cond-mat.mtrl-sci↗

First-principles study of multi-control graphene doping using light-switching molecules

The high carrier mobility in graphene promises its utility in electronics applications. Azobenzene is a widely studied organic molecule for switchable optoelectronic devices that can be synthesized with a wide variety of ligands and deposited on graphene. Using first-principles calculations, we investigate graphene doping by physisorbed azobenzene molecules with various electron-donating and -accepting ligands. We confirm previous experimental results that demonstrate greater p-doping of graphene for the trans compared to cis configuration when using a SO$_3$ electron-accepting ligand, however we find that NO$_2$ ligands maximize the p-doping difference between isomers. We also examine how these doping effects change when the graphene monolayer is supported on a silica substrate. We then extend these findings by examining the doping effects of an applied electrical bias and mechanical strain to the graphene, which lead to changes in doping for both the trans and cis isomers. These results demonstrate a new type of multi-control device combining light, electric field, and strain to change carrier concentration in graphene.

cond-mat.mtrl-sci↗