arXiv subjects

Haibo Xie

Publications and source records attributed to Haibo Xie.

4 recordsLinked to original sources

arXiv2026

Odd-Parity Chiral Magnons in Collinear Antiferromagnetic Multiferroics

Odd-parity magnetism represents an intriguing frontier in unconventional magnets; however, its realization has traditionally relied on noncollinear magnetic orders accompanied by broken spin conservation, which inevitably causes spin relaxation and dissipative transport of spin-encoded information. Here, we uncover a distinct route toward spin-conserving odd-parity magnon splitting enabled by antichiral Haldane-like flux (AHF) in collinear antiferromagnetic multiferroics. Symmetry analysis reveals that such AHF driven by intra-sublattice Dzyaloshinskii-Moriya interactions (DMI) gives rise to symmetry-dependent odd-parity magnon splittings, ranging from $p$-wave and $f$-wave to nodeless forms. Moreover, the coupling between ferroelectric modes and DMI provides an electric-field knob for manipulating chiral band splitting and magnon transport. Combining density functional theory (DFT) calculations, we identify a series of promising candidate materials in both 2D and bulk antiferromagnetic multiferroics. Our work provides new insights into the realization of odd-parity chiral magnons in collinear antiferromagnets and magnetoelectric coupling mechanisms in multiferroics.

cond-mat.mtrl-sci↗

arXiv2025

Topological Valley Transport in Bilayer Graphene Induced by Interlayer Sliding

Interlayer sliding, together with twist angle, is a crucial parameter that defines the atomic registry and thus determines the properties of two-dimensional (2D) material homobilayers. Here, we theoretically demonstrate that controlled interlayer sliding in bilayer graphene induces Berry curvature reversals, leading to topological states confined within a one-dimensional moir\'e channel. We experimentally realize interlayer sliding by bending the bilayer graphene geometry across a nanoridge. Systematic electronic transport measurements reveal topological valley transport when the Fermi energy resides within the band gap, consistent with theoretical predictions of eight topological channels. Our findings establish interlayer sliding as a powerful tool for tuning the electronic properties of bilayer graphene and underscore its potential for broad application across 2D material systems.

cond-mat.mes-hall↗

arXiv2024

Inducing Berry Curvature Dipole in Multilayer Graphene through Inhomogeneous Interlayer Sliding

Breaking lattice symmetry is crucial for generating a nonzero Berry curvature. While manipulating twisting angles between adjacent layers has successfully broken lattice symmetry through strain field and generated nonzero Berry curvature, interlayer sliding in principle offers a promising alternative route. However, realizing uniform interlayer sliding faces experimental challenges due to its energetic instability. In this work, we introduce an experimentally feasible method, using a corrugated substrate to induce an inhomogeneous but energetically more stable interlayer sliding in multilayer graphene. Our simulations demonstrate that inhomogeneous interlayer sliding produces a sizable Berry curvature dipole, which can be further tuned by varying the interlayer sliding distances and potential differences. The resulting Berry curvature dipole magnitude is remarkably up to 100 times greater than the maximum displacement involved in the inhomogeneous sliding. Our results highlight inhomogeneous interlayer sliding as a viable and effective method to induce a significant Berry curvature dipole in graphene systems and propose the experimentally feasible way to realize it.

cond-mat.mes-hall↗

arXiv2024

Bias Voltage Driven Tunneling Magnetoresistance Polarity Reversal in 2D Stripy Antiferromagnet CrOCl

Atomically thin materials with coupled magnetic and electric polarization are critical for developing energy-efficient and high-density spintronic devices, yet they remain scarce due to often conflicting requirements of stabilizing both magnetic and electric orders. The recent discovery of the magnetoelectric effect in the 2D stripy antiferromagnet CrOCl highlights this semiconductor as a promising platform to explore electric field effects on magnetoresistance. In this study, we systematically investigate the magnetoresistance in tunneling junctions of bilayer and monolayer CrOCl. We observe that the transition from antiferromagnetic to ferrimagnetic phases in both cases induces a positive magnetoresistance at low bias voltages, which reverses to a negative value at higher bias voltages. This polarity reversal is attributed to the additional electric dipoles present in the antiferromagnetic state, as supported by our theoretical calculations. These findings suggest a pathway for the electric control of spintronic devices and underscore the potential of 2D magnets like CrOCl in advancing energy-efficient spintronic applications.

cond-mat.mes-hall↗