arXiv subjects

Haimeng Huang

Publications and source records attributed to Haimeng Huang.

3 recordsLinked to original sources

arXiv2024

Taylor Modeling and Comparative Research Containing Aspect-Ratio Dependent Optimization of Three-Dimensional Hk Superjunction MOSFETs

This paper presents a comprehensive study on aspect-ratio dependent optimization for specific on-resistance of three-dimensional high-k superjunction MOSFETs. The research introduces a Taylor modeling method, overcoming the computational limitations of the Bessel method. It also employs the Chynoweth model for more accurate breakdown voltage determination. The study provides a comparative analysis of four different superjunction structures, across five aspects: electric field, impact ionization integral, aspect ratio dependent optimization, charge imbalance effect and temperature. The findings offer valuable insights for the manufacturing guidance of superjunction structure selection

physics.app-ph↗

arXiv2024

Design and Process Analysis of a Split-Gate Trench Power MOSFET with Bottom-Trench Hk-Pillar Superjunction for Enhanced Performance

In this paper, we propose a simulation-based novel Split-Gate Trench MOSFET structure with an optimized fabrication process to enhance power efficiency, switching speed, and thermal stability for high-performance semiconductor applications. Integrating high-k pillars with superjunction structures beneath the split gate enhancing breakdown performance by reducing critical field intensity by up to 35%, the device achieves a 15% improvement in Figures of Merit (FOMs) for BV2/Ron,sp. Dynamic testing reveals approximately a 25% reduction in both input and output capacitance, as well as gate-to-drain charge (QGD). This reduction, coupled with an approximately 40% improvement in Baliga's High-Frequency Figure of Merit (BHFFOM) and over 20% increase in the New High-Frequency Figure of Merit (NHFFOM), underscores the design's suitability for high-speed, high-efficiency power electronics. Simulations examining the effects of high-k pillar depth indicate that an optimal depth of 3.5 um achieves a balanced performance between BV and Ron,sp. The influence of high-k materials on BT-Hk-SJ MOSFET performance was investigated by comparing hafnium dioxide (HfO2), nitride, and oxynitride. Among these, HfO2 demonstrated optimal performance across static, dynamic, and diode characteristics due to its high dielectric constant, while material choice had minimal impact, with variations kept within 5%.

physics.app-ph↗

arXiv2024

TCAD Simulation of Novel Multi-Spacer HK/MG 28nm Planar MOSFET for Sub-threshold Swing and DIBL Optimization

This study optimizes 28 nm planar MOSFET technology to reduce device leakage current and enhance switching speed. The specific aims are to decrease subthreshold swing (S.S.) and mitigate drain induced barrier lowering (DIBL) effect. Silvaco TCAD software is used for process (Athena) and device (Atlas) simulations. For the further development of MOSFET technology, we implemented our device (planar 28 nm n-MOSFET) with high-k metal-gate (HK/MG), lightly doped drain (LDD), multiple spacers (mult-spacers), and silicide. Simulation validation shows improvements over other 28 nm devices, with lower static power consumption and notable optimizations in both S.S. (69.8 mV/dec) and DIBL effect (30.5 mV/V).

physics.app-ph↗