SearcharxivSearch

arXiv subjects

Haiqing Zhou

Publications and source records attributed to Haiqing Zhou.

4 recordsLinked to original sources

Axion-like particle production from kaon decays within U(3) chiral theory

Kaon decays provide important constraints on the axion-like particle (ALP), particularly through the $K\toπa$ processes. In this work, we compute the $K\toπa$ decay amplitudes, as well as the $K\toππ$ decay amplitudes, at leading order within U(3) chiral perturbation theory. The $ππ$ final-state interaction effects in both processes are implemented by employing the chiral unitarization approach. The relevant weak low-energy constants are determined by fitting to the experimental data on $K\toππ$ decays. Our numerical analysis shows that the explicit $η_0$ contribution to the $K\toπa$ amplitudes is small, whereas the new weak operator unique to the U(3) theory can give a sizable contribution. The $ππ$ final-state interactions are found to be insignificant in the $K^\pm\toπ^\pm a$ decays, but give pronounced effects in the $K^0/\bar{K}^0\toπ^0a$ channels. Constraints on the ALP couplings are derived from the most recent NA62 upper limit on the $K^+\toπ^+ +invisible$ decay. For completeness, we also include constraints from the KOTO search for $K_L\toπ^0+ invisible$, the NA62 measurement of $K^+\toπ^+γγ$, and the NA48 measurement of $K_S\toπ^0γγ$.

hep-ph

Ultra-low Power Nanoelectromechanical Memory Based on Location-controllable Nanogap System

Nanogap engineering of low-dimensional nanomaterials, has received considerable interest in a variety of fields, ranging from molecular electronics to memories. Creating nanogaps at a certain position is of vital importance for the repeatable fabrication of the devices. In this work, we report a rational design of non-volatile memories based on sub-5 nm nanogaped single-walled carbon nanotubes (SWNTs) via the electromechanical motion. The nanogaps are readily realized by electroburning in a partially suspended SWNTs device with nanoscale region. The SWNT memory devices are applicable for both metallic and semiconducting SWNTs, resolving the challenge of separation of semiconducting SWNTs from metallic ones. Meanwhile, the memory devices exhibit excellent performance: ultra-low writing energy (4.1*10-19 J per bit), ON/OFF ratio of 105, stable switching ON operations and over 30 hours retention time in ambient conditions, which are of great potential for applications.

cond-mat.mes-hall

Generation and Detection of Surface Plasmon Polaritons by Transition Metal Dichalcogenides for Chip-level Electronic-Photonic Integrated Circuits

The monolithic integration of electronics and photonics has attracted enormous attention due to its potential applications. However, the realization of such hybrid circuits has remained a challenge because it requires optical communication at nanometer scales. A major challenge to this integration is the identification of a suitable material. After discussing the material aspect of the challenge, we identified atomically thin transition metal dichalcogenides (TMDs) as a perfect material platform to implement the circuit. The selection of TMDs is based on their very distinct property: monolayer TMDs are able to emit and absorb light at the same wavelength determined by direct exciton transitions. To prove the concept, we fabricated simple devices consisting of silver nanowires as plasmonic waveguides and monolayer TMDs as active optoelectronic media. Using photoexcitation, direct optical imaging and spectral analysis, we demonstrated generation and detection of surface plasmon polaritons by monolayer TMDs. Regarded as novel materials for electronics and photonics, transition metal dichalcogenides are expected to find new applications in next generation integrated circuits.

cond-mat.mes-hall

Thickness-Dependent Morphologies of Gold on N-Layer Graphenes

We report that gold thermally deposited onto n-layer graphenes interacts differently with these substrates depending on the number layer, indicating the different surface properties of graphenes. This results in thickness-dependent morphologies of gold on n-layer graphenes, which can be used to identify and distinguish graphenes with high throughput and spatial resolution. This technique may play an important role in checking if n-layer graphenes are mixed with different layer numbers of graphene with a smaller size, which cannot be found by Raman spectra. The possible mechanisms for these observations are discussed.

physics.chem-ph