arXiv subjects

Haitian Su

Publications and source records attributed to Haitian Su.

10 recordsLinked to original sources

arXiv2026

Microwave Response of the Superconducting Diode Effect in Proximitized Bilayer Graphene Interferometers

Microwave irradiation has emerged as a promising means to tune the superconducting diode effect (SDE) in Josephson junction devices. Previous experimental studies have mainly focused on the adiabatic-driving regime, in which the diode efficiency increases monotonically with microwave power and can approach the ideal value of unity. Beyond this regime, however, the microwave response of the SDE remains largely unexplored experimentally. In this work, we investigate the microwave response of the SDE in bilayer-graphene-based superconducting quantum interference devices (SQUIDs) under a broad range of driving frequencies. We show that increasing the driving frequency changes the response characteristics of the diode efficiency to microwave power--the dependence of the diode efficiency evolves from monotonic enhancement with increasing microwave power in the adiabatic regime to non-monotonic behavior beyond this regime, and ultimately to sign-reversal as well oscillatory characteristics at sufficiently high frequencies. We find that these experimentally observed frequency-dependent power response characteristics of the diode efficiency can be qualitatively captured by simulations based on the resistively shunted junction model using the device current-phase relations extracted from the experiments. These results establish SQUIDs made from bilayer graphene as a versatile platform for studying dynamic properties of superconducting junction devices.

cond-mat.mes-hall↗

arXiv2026

Spin splitting, Kondo correlation and singlet-doublet quantum phase transition in a superconductor-coupled InSb nanosheet quantum dot

We realize a superconductor-coupled quantum dot (QD) in an InSb nanosheet, a 2D platform promising for studies of topological superconductivity. The device consists of a superconductor-QD-superconductor junction, where a bottom bilayer gate defines the QD and allows tuning of its coupling to the superconducting leads. The QD exhibits large $g$-factors and strong spin-orbit coupling. Transport measurements reveal Coulomb diamond-shaped differential conductance features with even-odd alternating sizes and pronounced conductance lines associated with the superconducting gap, confirming a few-electron, superconductor-coupled regime. At an odd electron occupation, Kondo signatures emerge, including a zero-bias peak that splits with magnetic field and is logarithmically suppressed at elevated temperatures. We further observe a doublet-singlet quantum phase transition, manifested by a clear change of Andreev bound states from crossing to anticrossing as the coupling strength increases. These results underscore the rich physics of InSb nanosheet QDs and their promise for topological quantum devices.

cond-mat.supr-con↗

arXiv2025

Gate Tunable Josephson Diode Effect in Josephson Junctions made from InAs Nanosheets

We report the observation of Josephson diode effect (JDE) in hybrid devices made from semiconductor InAs nanosheets and superconductor Al contacts. By applying an in-plane magnetic field ($B_{\mathrm{xy}}$), we detect non-reciprocal superconducting switching current as well as non-reciprocal superconducting retrapping current. The strength of the JDE depends on the angle between the in-plane magnetic field and the bias current ($I_{\mathrm{b}}$), reaching its maximum when $B_{\mathrm{xy}} \perp I_{\mathrm{b}}$ and dropping to nearly zero when $B_{\mathrm{xy}}\parallel I_{\mathrm{b}}$. Additionally, the diode efficiency is tunable via an electrostatic gate with a complete suppression at certain gate voltages. Our findings indicate that the observed JDE in InAs nanosheet-based Josephson junctions most likely arises from the Rashba spin-orbit interaction (SOI) in the nanosheets. Such gate-tunable JDE in Josephson junctions made from semiconductor materials with SOI is useful not only for constructing advanced superconducting electronics but also for detecting novel superconducting states.

cond-mat.mes-hall↗

arXiv2025

Tunable superconducting diode effect in higher-harmonic InSb nanosheet interferometers

Superconducting diodes, characterized by the nonreciprocal supercurrent flow, have gained significant attention for their potential in dissipationless electronics. This study presents a superconducting quantum interference device (SQUID) composed of two Al-InSb nanosheet Josephson junctions. Utilizing prepatterned local backgates, we achieve a gate- and flux-tunable superconducting diode with controllable efficiency in both amplitude and sign. Numerical simulations attribute the diode effect to higher harmonics in the current-phase relation. Crucially, fractional Shapiro step experiments provide direct insights into the evolution of these higher harmonics with flux tuning, showcasing significant enhancements in the second-harmonic signatures of the SQUID near half-integer flux quanta. Furthermore, we investigate the microwave-assisted diode response and experimentally show that the polarity of the diode effect can be switched by the microwave power. These results demonstrate the potential of InSb nanosheet-based hybrid devices as highly tunable elements for use in dissipationless electronics.

cond-mat.supr-con↗

arXiv2024

Microwave-assisted unidirectional superconductivity in Al-InAs nanowire-Al junctions under magnetic fields

Under certain symmetry-breaking conditions, a superconducting system exhibits asymmetric critical currents, dubbed the ``superconducting diode effect". Recently, systems with the ideal superconducting diode efficiency or unidirectional superconductivity have received considerable interest. In this work, we report the study of Al-InAs nanowire-Al Josephson junctions under microwave irradiation and magnetic fields. We observe an enhancement of superconducting diode effect under microwave driving, featured by a horizontal offset of the zero-voltage step in the voltage-current characteristic that increases with microwave power. Devices reach the unidirectional superconductivity regime at sufficiently high driving amplitudes. The offset changes sign with the reversal of the magnetic field direction. Meanwhile, the offset magnitude exhibits a roughly linear response to the microwave power in dBm when both the power and the magnetic field are large. The signatures observed are reminiscent of a recent theoretical proposal using the resistively shunted junction (RSJ) model. However, the experimental results are not fully explained by the RSJ model, indicating a new mechanism for unidirectional superconductivity that is possibly related to non-equilibrium dynamics or dissipation in periodically driven superconducting systems.

cond-mat.mes-hall↗

arXiv2024

One-dimensional quantum dot array integrated with charge sensors in an InAs nanowire

We report an experimental study of a one-dimensional quintuple-quantum-dot array integrated with two quantum dot charge sensors in an InAs nanowire. The device is studied by measuring double quantum dots formed consecutively in the array and corresponding charge stability diagrams are revealed with both direct current measurements and charge sensor signals. The one-dimensional quintuple-quantum-dot array are then tuned up and its charge configurations are fully mapped out with the two charge sensors. The energy level of each dot in the array can be controlled individually by using a compensated gate architecture (i.e., "virtual gate"). After that, four dots in the array are selected to form two double quantum dots and ultra strong inter-double-dot interaction is obtained. A theoretical simulation based on a 4-dimensional Hamiltonian confirms the strong coupling strength between the two double quantum dots. The highly controllable one-dimensional quantum dot array achieved in this work is expected to be valuable for employing InAs nanowires to construct advanced quantum hardware in the future.

cond-mat.mes-hall↗

arXiv2024

Gate-defined quantum point contacts in a germanium quantum well

We report an experimental study of quantum point contacts defined in a high-quality strained germanium quantum well with layered electric gates. At zero magnetic field, we observe quantized conductance plateaus in units of 2$e^2/h$. Bias-spectroscopy measurements reveal that the energy spacing between successive one-dimensional subbands ranges from 1.5 to 5\,meV as a consequence of the small effective mass of the holes and the narrow gate constrictions. At finite magnetic fields perpendicular to the device plane, the edges of the conductance plateaus get splitted due to the Zeeman effect and Landé $g$ factors are estimated to be $\sim6.6$ for the holes in the germanium quantum well. We demonstrate that all quantum point contacts in the same device have comparable performances, indicating a reliable and reproducible device fabrication process. Thus, our work lays a foundation for investigating multiple forefronts of physics in germanium-based quantum devices that require quantum point contacts as a building block.

cond-mat.mes-hall↗

arXiv2024

Ubiquitous missing first Shapiro step in Al-InSb nanosheet Josephson junctions

The absence of odd-order Shapiro steps is a predicted signature of topological superconductors. Experimentally, the missing first-order Shapiro step has been reported in both putative topological superconducting systems and topologically trivial superconductor-semiconductor Josephson junctions. Here, we revisit this phenomenon in topologically trivial Al-InSb nanosheet Josephson junctions under microwave irradiation. The missing first Shapiro step coincides with a sharp voltage jump during superconducting switching, yet reappears when the jump is lowered and softened by increasing microwave power, temperature, or magnetic field. It also reappears at higher microwave frequencies, consistent with qualitative results from an RSJ model incorporating the sharp jump. These observations indicate that the absence of the first Shapiro step, associated with the sharp switching jump, simply results from their location within the measurement blind region. This work identifies a common but overlooked mechanism underlying the missing first Shapiro step, offering new insights into fractional Josephson effect experiments.

cond-mat.supr-con↗

arXiv2023

Supercurrent, Multiple Andreev Reflections and Shapiro Steps in InAs Nanosheet Josephson Junctions

High-quality free-standing InAs nanosheets are emerging layered semiconductor materials with potentials in designing planar Josephson junction devices for novel physics studies due to their unique properties including strong spin-orbit couplings, large Landé g-factors and the two dimensional nature. Here, we report an experimental study of proximity induced superconductivity in planar Josephson junction devices made from free-standing InAs nanosheets. The nanosheets are grown by molecular beam epitaxy and the Josephson junction devices are fabricated by directly contacting the nanosheets with superconductor Al electrodes. The fabricated devices are explored by low-temperature carrier transport measurements. The measurements show that the devices exhibit a gate-tunable supercurrent, multiple Andreev reflections, and a good quality superconductor-semiconductor interface. The superconducting characteristics of the Josephson junctions are investigated at different magnetic fields and temperatures, and are analyzed based on the Bardeen-Cooper-Schrieffer (BCS) theory. The measurements of ac Josephson effect are also conducted under microwave radiations with different radiation powers and frequencies, and integer Shapiro steps are observed. Our work demonstrates that InAs nanosheet based hybrid devices are desired systems for investigating forefront physics, such as the two-dimensional topological superconductivity.

cond-mat.mes-hall↗

arXiv2022

Electron transport properties of a narrow-bandgap semiconductor Bi$_2$O$_2$Te nanosheet

A thin, narrow-bandgap semiconductor Bi$_2$O$_2$Te nanosheet is obtained via mechanical exfoliation and a Hall-bar device is fabricated from it on a heavily doped Si/SiO$_2$ substrate and studied at low temperatures. Gate transfer characteristic measurements show that the transport carriers in the nanosheet are of $n$-type. The carrier density, mobility, and mean free path in the nanosheet are determined by measurements of the Hall resistance and the longitudinal resistance of the Hall-bar device and it is found that the electron transport in the nanosheet is in a quasi-two-dimensional (2D), strongly disordered regime. Magnetotransport measurements for the device at magnetic fields applied perpendicular to the nanosheet plane show dominantly weak antilocalization (WAL) characteristics at low fields and a linear magnetoresistance (LMR) behavior at large fields. We attribute the WAL characteristics to strong spin-orbit interaction (SOI) and the LMR to the classical origin of strong disorder in the nanosheet. Low-field magnetoconductivity measurements are also performed and are analyzed based on the multi-channel Hikami-Larkin-Nagaoka theory with the LMR correction being taken into account. The phase coherence length, spin relaxation length, effective 2D conduction channel number and coefficient in the linear term due to the LMR in the nanosheet are extracted. It is found that the spin relaxation length in the Bi$_2$O$_2$Te nanosheet is several times smaller than it in its counterpart Bi$_2$O$_2$Se nanosheet and thus an ultra-strong SOI is present in the Bi$_2$O$_2$Te nanosheet. Our results reported in this study would greatly encourage further studies and applications of this emerging narrow-bandgap semiconductor 2D material.

cond-mat.mes-hall↗