arXiv subjects

Haiwen Liu

Publications and source records attributed to Haiwen Liu.

107 records · Page 6Linked to original sources

arXiv2015

Tunable Anderson metal-insulator transition in quantum-spin Hall insulators

We numerically study disorder effects in Bernevig-Hughes-Zhang (BHZ) model, and find that Anderson transition of quantum spin-Hall insulator (QSHI) is determined by model parameters. The BHZ Hamiltonian is equivalent to two decoupled spin blocks that belong to the unitary class. In contrast to the common belief that a two-dimensional unitary system scales to an insulator except at certain critical points, we find, through calculations scaling properties of the localization length, level statistics, and participation ratio, that a possible exotic metallic phase emerges between a QSHI and a normal insulator phases in InAs/GaSb-type BHZ model. On the other hand, direct transition from a QSHI to a normal insulator is found in HgTe/CdTe-type BHZ model. Furthermore, we show that the metallic phase originates from the Berry phase and can survive both inside and outside the gap.

cond-mat.mes-hall↗

arXiv2015

Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires

Cd3As2 is a newly booming Dirac semimetal with linear dispersion along all three momentum directions and can be viewed as 3D analog of graphene. As breaking of either time reversal symmetry or spatial inversion symmetry, the Dirac semimetal is believed to transform into Weyl semimetal with exotic chiral anomaly effect, while the experimental evidence of the chiral anomaly is still missing in Cd3As2. Here we report the magneto-transport properties of individual Cd3As2 nanowires. Large negative magnetoresistance (MR) with magnitude of -63% at 60 K and -11% at 300 K are observed when the magnetic field is parallel with the electric field direction, giving the evidence of the chiral magnetic effect in Cd3As2 nanowires. In addition, the critical magnetic field BC, where there is an extremum of the negative MR, increases with increasing temperature. As the first observation of chiral anomaly induced negative MR in Cd3As2 nanowires, it may offer valuable insights for low dimensional physics in Dirac semimetals.

cond-mat.mes-hall↗

arXiv2015

Building topological device through emerging robust helical surface states

We propose a nonlocal manipulation method to build topological devices through emerging robust helical surface states in Z_2=0 topological systems. Specifically, in a ribbon of Z_2=0 Bernevig- Hughes-Zhang (BHZ) model with finite-size effect, if magnetic impurities are doped on the top (bottom) edge, the edge states on the bottom (top) edge can be altered according to the strengths and directions of these magnetic impurities. Consequently, the backscattering between the emerging robust helical edge states and gapped normal edge states due to finite-size confinement is also changed, which makes the system alternate between a perfect one-channel conductor and a perfect insulator. This effect allows us to fabricate topological devices with high on-off ratio. Moreover, it can also be generalized to 3D model and more realistic Cd3As2 type Dirac semimetals.

cond-mat.mes-hall↗

arXiv2015

Anisotropic Magnetotransport and Exotic Longitudinal Linear Magnetoresistance in WTe2 Crystals

WTe2 semimetal, as a typical layered transition-metal dichalcogenide, has recently attracted much attention due to the extremely large, non-saturating parabolic magnetoresistance in perpendicular field. Here, we report a systematic study of the angular dependence of the magnetoresistance in WTe2 single crystal. The violation of the Kohler rule and a significant anisotropic magnetotransport behavior in different magnetic field directions are observed. Surprisingly, when the applied field is parallel to the tungsten chains of WTe2, an exotic large longitudinal linear magnetoresistance as high as 1200% at 15 T and 2 K is identified. Violation of the Kohler rule in transverse magnetoresistance can be understood based on a dual effect of the excitons formation and thermal activation, while large longitudinal linear magnetoresistance reflects perfectly the scattering and nesting of quasi-1D nature of this balanced hole-electron system. Our work will stimulate studies of such double-carrier correlated material and corresponding quantum physics.

cond-mat.mtrl-sci↗

arXiv2015

Ultraquantum magnetoresistance in single-crystalline $β$-Ag$_2$Se

In the history of condensed matter physics, reinvestigation of a well-studied material with enhanced quality sometimes led to important scientific discoveries. A well-known example is the discovery of fractional quantum Hall effect in high quality GaAs/AlGaAs heterojunctions. Here we report the first single crystal growth and magnetoresistance (MR) measurements of the silver chalcogenide $β$-Ag$_2$Se (Naumannite), a compound has been known for the unusual, linear-field-dependent MR in its polycrystalline form for over a decade. With the quantum limit (QL) as low as 3 Tesla, a moderate field produced by a superconductor magnet available in many laboratories can easily drive the electrons in Ag$_2$Se to an unprecedented state. We observed significant negative longitudinal MR beyond the QL, which was understood as a `charge-pumping' effect between the novel fermions with opposite chiralities. Characterization of the single-crystalline Ag$_2$Se and the fabrication of electric devices working above the QL, will represent a new direction for the study of these exotic electrons.

cond-mat.str-el↗

arXiv2015

Topological Imbert-Fedorov shift in Weyl semimetals

The Goos-Hänchen (GH) shift and the Imbert-Fedorov (IF) shift are optical phenomena which describe the longitudinal and transverse lateral shifts at the reflection interface, respectively. Here, we report the GH and IF shifts in Weyl semimetals (WSMs) - a promising material harboring low energy Weyl fermions, a massless fermionic cousin of photons. Our results show that GH shift in WSMs is valley-independent which is analogous to that discovered in a 2D relativistic material - graphene. However, the IF shift has never been explored in non-optical systems, and here we show that it is valley-dependent. Furthermore, we find that the IF shift actually originates from the topological effect of the system. Experimentally, the topological IF shift can be utilized to characterize the Weyl semimetals, design valleytronic devices of high efficiency, and measure the Berry curvature.

cond-mat.mes-hall↗

arXiv2015

Observation of superconductivity in 3D Dirac semimetal Cd3As2 crystal

Lately, the three-dimensional (3D) Dirac semimetal, which possesses 3D linear dispersion in electronic structure as a bulk analogue of graphene, has generated widespread interests in both material science and condensed matter physics. Very recently, crystalline Cd3As2 has been proposed and proved to be one of 3D Dirac semimetals which can survive in atmosphere. Here, by controlled point contact (PC) measurement, we observe the exotic superconductivity around point contact region on the surface of Cd3As2 crystal. The observation of zero bias conductance peak (ZBCP) and double conductance peaks (DCPs) symmetric to zero bias further reveal p-wave like unconventional superconductivity in Cd3As2 quantum matter. Considering the topological property of the 3D Dirac semimetal, our findings may indicate that the Cd3As2 crystal under certain conditions is a candidate of the topological superconductor, which is predicted to support Majorana zero modes or gapless Majorana edge/surface modes in the boundary depending on the dimensionality of the material.

cond-mat.supr-con↗

arXiv2014

Anisotropic Fermi Surface and Quantum Limit Transport in High Mobility 3D Dirac Semimetal Cd3As2

The three-dimensional (3D) topological Dirac semimetal is a new topological phase of matter, viewed as the 3D analogy of graphene with a linear dispersion in the 3D momentum space. Here, we report the angular dependent magnetotransport in Cd3As2 single crystal and clearly show how the Fermi surface evolves when tilting the magnetic field. Remarkably, when the magnetic field lies in [112] and [44-1] axis, only single oscillation period features present, however, the system shows double period oscillations when the field is applied along [1-10] direction. Moreover, tilting the magnetic field at certain direction also gives double period oscillations. We attribute the anomalous oscillation behavior to the sophisticated geometry of Fermi surface and illustrate a complete 3D Fermi surfaces with two nested anisotropic ellipsoids around the Dirac point. Additionally, a sub-millimeter mean free path at 6 K is observed in Cd3As2 crystal, indicating a large ballistic transport region in this material. Tracking the magnetoresistance oscillations to 60 T, we reach the quantum limit (n = 1 Landau Level) at about 43 T. These results improve the knowledge of the Dirac semimetal material Cd3As2, and also pave the way for proposing new electronic applications based on 3D Dirac materials.

cond-mat.mtrl-sci↗

arXiv2014

Floquet Majorana fermions in driven hexagonal lattice systems

We propose Floquet chiral topological superconducting systems hosting Floquet Majorana fermions, which consist of hexagonal lattices in proximity to superconductors with shining circularly polarized light. Specially for bilayer graphene system, we demonstrate that there exist three topological phases determined by certain parameters, namely, the amplitude and frequency of the induced light. The number of chiral Floquet Majorana edge states is confirmed by calculating Chern number analytically and energy spectrum in ribbon geometry. Moreover, this proposal is generalized to other hexagonal lattice systems, such as monolayer graphene and silicene. Notably, the parameter range of induced light to achieve the chiral Floquet Majorana edge states is experimentally feasible, and the corresponding Floquet Majorana fermions can be probed based on differential conductance using scanning tunneling spectroscopy.

cond-mat.mes-hall↗

arXiv2014

Crossover between Weak Antilocalization and Weak Localization of Bulk States in Ultrathin Bi2Se3 Films

We report transport studies on the 5 nm thick Bi2Se3 topological insulator films which are grown via molecular beam epitaxy technique. The angle-resolved photoemission spectroscopy data show that the Fermi level of the system lies in the bulk conduction band above the Dirac point, suggesting important contribution of bulk states to the transport results. In particular, the crossover from weak antilocalization to weak localization in the bulk states is observed in the parallel magnetic field measurements up to 50 Tesla. The measured magneto-resistance exhibits interesting anisotropy with respect to the orientation of B// and I, signifying intrinsic spin-orbit coupling in the Bi2Se3 films. Our work directly shows the crossover of quantum interference effect in the bulk states from weak antilocalization to weak localization. It presents an important step toward a better understanding of the existing three-dimensional topological insulators and the potential applications of nano-scale topological insulator devices.

cond-mat.mes-hall↗

arXiv2014

Surface plasmon polaritons in topological insulator

We study surface plasmon polaritons on topological insulator-vacuum interface. When the time-reversal symmetry is broken due to ferromagnetic coupling, the surface states exhibit magneto-optical Kerr effect. This effect gives rise to a novel transverse type surface plasmon polariton, besides the longitudinal type. In specific, these two types contain three different channels, corresponding to the pole of determinant of Fresnel reflection matrix. All three channels of surface plasmon polaritons display tight confinement, long lifetime and show strong light-matter coupling with a dipole emitter.

cond-mat.mes-hall↗

arXiv2014

Transport discovery of emerging robust helical surface states in $Z_2=0$ systems

We study the possibility of realizing robust helical surface states in $Z_2=0$ systems. We find that the combination of anisotropy and finite-size confinement leads to the emergence of robust helical edge states in both 2D and 3D $Z_2=0$ systems. By investigating an anisotropic Bernevig-Hughes-Zhang model in a finite sample, we demonstrate that the transport manifestation of the surface states is robust against non-magnetic disorder, resembling that of a $Z_2 = 1$ phase. Notably, the effective energy gap for the robust helical states can be efficiently engineered, allowing for potential applications as valley filters and valley valves. The realization of emerging robust helical surface states in realistic material is also discussed.

cond-mat.mes-hall↗

arXiv2013

One-dimensional quantum channel in a graphene line defect

Using a tight-binding model, we study a line defect in graphene where a bulk energy gap is opened by sublattice symmetry breaking. It is found that sublattice symmetry breaking may induce many configurations that correspond to different band spectra. In particular, a gapless state is observed for a configuration which hold a mirror symmetry with respect to the line defect. We find that this gapless state originates from the line defect and is independent of the width of the graphene ribbon, the location of the line defect, and the potentials in the edges of the ribbon. In particular, the gapless state can be controlled by the gate voltage embedded below the line defect. Finally, this result is supported with conductance calculations. This study shows how a quantum channel could be constructed using a line defect, and how the quantum channel can be controlled by tuning the gate voltage embedded below the line defect.

cond-mat.mes-hall↗

arXiv2013

Disorder induced field effect transistor in bilayer and trilayer graphene

We propose use of disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the disorder's effects are confined to only one of the graphene layers. This effect is based on the bias voltage's ability to select which of the graphene layers carries current, and is not tied to the presence of a gap in the density of states. In particular, we demonstrate this effect in models of gapless ABA-stacked trilayer graphene, gapped ABC-stacked trilayer graphene, and gapped bilayer graphene.

cond-mat.mes-hall↗

arXiv2012

The dependence of topological Anderson insulator on the type of disorder

This paper details the investigation of the influence of different disorders in two-dimensional topological insulator systems. Unlike the phase transitions to topological Anderson insulator induced by normal Anderson disorder, a different physical picture arises when bond disorder is considered. Using Born approximation theory, an explanation is given as to why bond disorder plays a different role in phase transition than does Anderson disorder. By comparing phase diagrams, conductance, conductance fluctuations, and the localization length for systems with different types of disorder, a consistent conclusion is obtained. The results indicate that a topological Anderson insulator is dependent on the type of disorder. These results are important for the doping processes used in preparation of topological insulators.

cond-mat.dis-nn↗

arXiv2012

Stabilizing topological phases in graphene via random adsorption

We study the possibility of realizing topological phases in graphene with randomly distributed adsorbates. When graphene is subjected to periodically distributed adatoms, the enhanced spin-orbit couplings can result in various topological phases. However, at certain adatom coverages, the intervalley scattering renders the system a trivial insulator. By employing a finite-size scaling approach and Landauer-Büttiker formula, we show that the randomization of adatom distribution greatly weakens the intervalley scattering, but plays a negligible role in spin-orbit couplings. Consequently, such a randomization turns graphene from a trivial insulator into a topological state.

cond-mat.mes-hall↗

arXiv2011

Quantum anomalous Hall effect with tunable Chern number in magnetic topological insulator film

We study the possibility of realizing quantum anomalous Hall effect (QAHE) with tunable Chern number through doping magnetic elements in the multi-layer topological insulator film. We find that high Chern number QAHE phases exist in the ideal neutral samples and it can make transition to another QAHE phase directly by means of tuning the exchange field strength or sample thickness. With the help of an extended Haldane model, we demonstrate the physical mechanism of the tunable Chern number QAHE phase. Further, we study the phenomena in the realistic samples with the Fermi energy being gating-modulated, where the multiple-integer QAHE plateaus remain and two separated QAHE phase are connected by metallic phase. The stability of the high Chern number QAHE phase is also discussed.

cond-mat.mes-hall↗