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Hamid R. Zarandi

Publications and source records attributed to Hamid R. Zarandi.

5 recordsLinked to original sources

Nanoscale memristive devices: Threats and solutions

Due to their incentivizing features, memristors are a promising candidate for replacing CMOS-based memories, which are faced with various functional challenges in deep submicron process technologies. Memristors are nonvolatile, have low leakage, and are dense in comparison to CMOS-based memories like SRAM. In this regard, resistive RAM (ReRAM) and spin-transfer-torque RAM (STT-RAM) memristors are distinguished among other memristor-based memory technologies, due to their superiority in process maturity and metrics such as memory operation energy, memory latency, and area. Hence, this chapter focuses on these two memristor-based memory technologies. Despite the good features of these types of memory, they suffer from some reliability threats. Reliability parameters affect each other, and examining their positive and negative effects has a significant impact on the effectiveness of the proposed solutions. In one view, the threats can be categorized into two classes: (1) read/write error and (2) soft error. In this chapter, we comprehensively describe these threats and present the state-of-the-art solutions that enable the widespread use of memristors, particularly ReRAM and STT-RAM, in different applications. Finally, we introduce the emerging ability of memristors as a computing unit aiming to minimize data restoration in computing, and we show how to perform logic and arithmetic computation in a crossbar array.

cs.ET

Fault Characterization and Hardening of Combinational Standard Cells Using 3D-TCAD Simulations for Cyber-Physical Systems

Cyber-physical systems (CPSs) are increasingly employed in applications with various levels of mission criticality, making the reliability of digital system components essential for maintaining service quality. On the other hand, advancements in technology nodes have heightened reliability concerns in these systems. This paper presents a method for characterizing and enhancing the fault tolerance of combinational standard cells using 3D-TCAD simulations. Through detailed simulations, we identify fault-sensitive regions in widely used standard cells under diverse scenarios that include variations in fault energy, particle angle, and the adjacency effect of identical and non-identical neighboring cells. Following this high-precision characterization, a hardened version of a universal logic NAND cell is proposed that mitigates its vulnerabilities. Simulation results demonstrate substantial improvements in resilience to particle-induced faults.

cs.AR

OptGM: An Optimized Gate Merging Method to Mitigate NBTI in Digital Circuits

This paper presents OptGM, an optimized gate merging method designed to mitigate negative bias temperature instability (NBTI) in digital circuits. First, the proposed approach effectively identifies NBTI-critical internal nodes, defined as those with a signal probability exceeding a predefined threshold. Next, based on the proposed optimized algorithm, the sensitizer gate (which drives the critical node) and the sensitive gate (which is fed by it) are merged into a new complex gate. This complex gate preserves the original logic while eliminating NBTI-critical nodes. Finally, to evaluate the effectiveness of OptGM, we assess it on several combinational and sequential benchmark circuits. Simulation results demonstrate that, on average, the number of NBTI-critical transistors (i.e., PMOS transistors connected to critical nodes), NBTI-induced delay degradation, and the total transistor count are reduced by 89.29%, 23.87%, and 6.47%, respectively. Furthermore, OptGM enhances performance per cost (PPC) by 12.8% on average, with minimal area overhead.

cs.AR

Stoch-IMC: A Bit-Parallel Stochastic In-Memory Computing Architecture Based on STT-MRAM

In-memory computing (IMC) offloads parts of the computations to memory to fulfill the performance and energy demands of applications such as neuromorphic computing, machine learning, and image processing. Fortunately, the main features that stochastic computing (SC) and IMC share, which are low computation complexity and high bit-parallel computation capability, promise great potential for integrating SC and IMC. In this paper, we exploit this potential by using stochastic computation as an approximation method to present effective in-memory computations with a good trade-off among design parameters. To this end, first, commonly used stochastic arithmetic operations of applications are effectively implemented using the primitive logic gates of the IMC method. Next, the in-memory scheduling and mapping of applications are obtained efficiently by a proposed algorithm. This algorithm reduces the computation latency by enabling intra-subarray parallelism while considering the IMC method constraints. Subsequently, a bit-parallel stochastic IMC architecture, Stoch-IMC, is presented that enables bit parallelization of stochastic computations over memory subarrays/banks. To evaluate Stoch-IMC's effectiveness, various analyses were conducted. Results show average performance improvements of 135.7X and 124.2X across applications compared to binary IMC and related in-memory SC methods, respectively. The results also demonstrate an average energy reduction of 1.5X compared to binary IMC, with limited energy overhead relative to the in-memory SC method. Furthermore, the results reveal average lifetime improvements of 4.9X and 216.3X over binary IMC and in-memory SC methods, respectively, along with high bitflip tolerance.

cs.AR

Leveraging the Potential of Control-Flow Error Resilient Techniques in Multithreaded Programs

This paper presents a software-based technique to recover control-flow errors in multithreaded programs. Control-flow error recovery is achieved through inserting additional instructions into multithreaded program at compile time regarding to two dependency graphs. These graphs are extracted to model control-flow and data dependencies among basic blocks and thread interactions between different threads of a program. In order to evaluate the proposed technique, three multithreaded benchmarks quick sort, matrix multiplication and linked list utilized to run on a multi-core processor, and a total of 5000 transient faults has been injected into several executable points of each program. The results show that this technique detects and corrects between 91.9% and 93.8% of the injected faults with acceptable performance and memory overheads.

cs.PL