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Han-Bing Li

Publications and source records attributed to Han-Bing Li.

2 recordsLinked to original sources

Mirror-symmetry engineering of altermagnetism based on monolayer hexagonal lattices

Altermagnetism (AM) is a novel collinear antiferromagnetic phase characterized by spin-polarized bands and zero net magnetization. However, realizing AM in monolayer hexagonal lattices is strongly constrained by lattice symmetry. Here, we propose a mirror-symmetry-based design principle and implementation scheme for realizing AM based on monolayer hexagonal lattices and validate it using holey graphyne (HGY) as a representative system. By examining hydrogenated nonmetal units X$-$H (X = B, C, N, P, and S) introduced along the mirror-symmetry axis and extending the analysis to N$-$F, we identify the configurations that form two antiparallel spin sublattices related by mirror reflection. The N$-$H structure forms a stable altermagnetic ground state, with a momentum-dependent spin splitting up to 148.2 meV. The magnetism originates from $π-π$ superexchange interactions, and H/F functionalization stabilizes intrinsic AM by regulating the local charge distribution. Our work offers insights into the design of light-element altermagnetic materials.

cond-mat.mtrl-sci↗

Achieving Altermagnetism in Monolayer Holey Graphyne via Atomic Manipulation

Achieving altermagnetism (AM) in two-dimensional materials is crucial for advancing the development of novel spintronic devices. This study introduces an innovative strategy to realize AM in monolayer materials by adsorbing non-magnetic $sp$ impurity atoms to construct planar bridges. Using holey graphyne (HGY) as the research object, first-principles calculations reveal that B and S impurity atoms can modulate the local electronic structure and trigger a superexchange mechanism, inducing a collinear compensated antiferromagnetic ground state with pronounced altermagnetic properties. Among these, the B adsorption system exhibits the best magnetic performance, with a N$\rm \acute{e}$el temperature reaching approximately 210 K. This work offers a flexible and effective strategy to achieve AM in single-atomic-layer materials and $p$-electron systems.

cond-mat.mtrl-sci↗