arXiv subjects

Haneul Kang

Publications and source records attributed to Haneul Kang.

6 recordsLinked to original sources

arXiv2023

Interfacial-Water-Modulated Photoluminescence of Single-Layer WS$_2$ on Mica

Because of their bandgap tunability and strong light-matter interactions, two-dimensional (2D) semiconductors are considered promising candidates for next-generation optoelectronic devices. However, their photophysical properties are greatly affected by environments because of their 2D nature. In this work, we report that the photoluminescence (PL) of single-layer WS$_2$ is substantially affected by interfacial water that is inevitably present between itself and supporting mica substrates. Using PL spectroscopy and wide-field imaging, we show that the emission signals from A excitons and their negative trions decreased at distinctively different rates with increasing excitation power, which can be attributed to the more efficient annihilation between excitons than trions. By gas-controlled PL imaging, we also prove that interfacial water converts trions into excitons by depleting native negative charges through an oxygen reduction reaction, which renders excited WS$_2$ more susceptible to nonradiative decay via exciton-exciton annihilation. Understanding the roles of nanoscopic water in complex low-dimensional materials will eventually contribute to devising their novel functions and devices.

physics.chem-ph↗

arXiv2021

Redox and Molecular Diffusion in 2D van der Waals Space

Understanding charge transfer (CT) between two chemical entities and subsequent change in their charge densities is essential not only for molecular species but also for various low-dimensional materials. Because of their extremely high fraction of surface atoms, two-dimensional (2-D) materials are most susceptible to charge exchange and exhibit drastically different physicochemical properties depending on their charge density. In this regard, spontaneous and uncontrollable ionization of graphene in the ambient air has caused much confusion and technical difficulty in achieving experimental reproducibility since its first report in 2004. Moreover, the same ambient hole doping was soon observed in 2-D semiconductors, which implied that a common mechanism should be operative and apply to other low-dimensional materials universally. In this Account, we review our breakthroughs in unraveling the chemical origin and mechanistic requirements of the hidden CT reactions using 2-D crystals. We developed in-situ optical methods to quantify charge density using Raman and photoluminescence (PL) spectroscopy and imaging. Using gas and temperature-controlled in-situ measurements, we revealed that the electrical holes are injected by the oxygen reduction reaction (ORR): $O_{2}$ + $4H^{+}$ + $4e^{-}$ $\rightleftharpoons$ $2H_{2}O$, which was independently verified by pH dependence in HCl solutions. In addition to oxygen and water vapor, the overall CT reaction requires hydrophilic dielectric substrates, which assist hydration of the sample-substrate interface. The interface-localized reaction allowed us to visualized and control interfacial molecular diffusion and CT by varing the 2-D gap spacing and introducing defects. The complete mechanism of the fundamental charge exchange summarized in this Account will be essential in exploring material and device properties of other low dimensional materials.

cond-mat.mtrl-sci↗

arXiv2021

Optically Facet-Resolved Reaction Anisotropy in Two-Dimensional Transition Metal Dichalcogenides

Quantifying anisotropy in the chemical reactions of mesoscopic crystals has mostly resorted on the combination of electron microscopy and diffraction. In this work, we established crystal-facet-resolved kinetic measurements of oxidation reactions in 2D transition metal dichalcogenides (TMDs) using optical second-harmonic generation spectroscopy and scanning probe microscopy. We show the in-plane anisotropy of their bond-breaking reactions is governed by their structure and strongly material-dependent among four TMDs. The facet-resolved analysis directly revealed that the reactions proceed fastest (slowest) for chalcogen (metal)-terminated zigzag edges with armchair edges in the middle. The degree of the anisotropy inducing trigonal oxidation patterns was much higher in MoS2 and MoSe2 than WS2 and WSe2. Kinetic Wulff construction based on edge-specific reaction rates verified the material-dependent mesoscopic reaction patterns. We also show that the reactions are initiated at substrate-mediated defects located on the bottom and top surfaces of 2D TMDs.

physics.chem-ph↗

arXiv2021

Optical Imaging of Chemically and Geometrically Controlled Interfacial Diffusion and Redox in 2D van der Waals Space

Molecular motions and chemical reactions occurring in constrained space play key roles in many catalysis and energy storage applications. However, its understanding has been impeded by difficulty in detection and lack of reliable model systems. In this work, we report geometric and chemical manipulation of O2 diffusion and ensuing O2-mediated charge transfer (CT) that occur in the 2D space between single-layer transition metal dichalcogenides (TMDs) and dielectric substrates. As a sensitive real-time wide-field imaging signal, charge-density-dependent photoluminescence (PL) from TMDs was used. The two sequential processes inducing spatiotemporal PL change could be drastically accelerated by increasing the interfacial gap size or introducing artificial defects serving as CT reaction centers. We also show that widely varying CT kinetics of four TMDs are rate-determined by the degree of hydration required for the reactions. The reported findings will be instrumental in designing novel functional nanostructures and devices.

cond-mat.mtrl-sci↗

arXiv2020

Interface-Confined Doubly Anisotropic Oxidation of Two-Dimensional MoS2

Despite their importance, chemical reactions confined in a low dimensional space are elusive and experimentally intractable. In this work, we report doubly anisotropic, in-plane and out-of-plane, oxidation reactions of two-dimensional crystals, by resolving interface-confined thermal oxidation of a single and multilayer MoS2 supported on silica substrates from their conventional surface reaction. Using optical second-harmonic generation spectroscopy of artificially stacked multilayers, we directly proved that crystallographically oriented triangular oxides (TOs) were formed in the bottommost layer while triangular etch pits (TEs) were generated in the topmost layer and that both structures were terminated with zigzag edges. The formation of the Mo oxide layer at the interface demonstrates that O2 diffuses efficiently through the van der Waals (vdW) gap but not MoO3, which would otherwise sublime. The fact that TOs are several times larger than TEs indicates that oxidation is greatly enhanced when MoS2 is in direct contact with silica substrates, which suggests a catalytic effect. This study indicates that the vdW-bonded interfaces are essentially open to mass transport and can serve as a model system for investigating chemistry in low dimensional spaces.

cond-mat.mtrl-sci↗

arXiv2020

Redox-Governed Charge Doping Dictated by Interfacial Diffusion in Two-Dimensional Materials

Controlling extra charge carriers is pivotal in manipulating electronic, optical, and magnetic properties of various two-dimensional (2D) materials. Nonetheless, the ubiquitous hole doping of 2D materials in the air and acids has been controversial in its mechanistic details. Here we show their common origin is an electrochemical reaction driven by redox couples of oxygen and water molecules. Using real-time photoluminescence imaging of WS2 and Raman spectroscopy of graphene, we capture molecular diffusion through the 2D nanoscopic space between 2D materials and hydrophilic substrates, and show that the latter accommodate water molecules also serving as a hydrating solvent. We also demonstrate that HCl-induced doping is governed by dissolved O2 and pH in accordance with the Nernst equation. The nanoscopic electrochemistry anatomized in this work sets an ambient limit to material properties, which is universal to not only 2D but also other forms of materials.

cond-mat.mes-hall↗