arXiv subjects

Hang Chi

Publications and source records attributed to Hang Chi.

15 recordsLinked to original sources

arXiv2026

Proximity Magnetism in Mn(Bi,Sb)2Te4-(Bi,Sb)2Te3/MnTe Natural Heterostructures

Magnetic topological insulators and their heterostructures provide great opportunities in coupling band topology with nontrivial spin configuration for enhanced spintronic device performance as well as designing totally new magnetoelectric systems and functionalities. We find that Mn interdiffusion from MnTe when interfaced with (Bi,Sb)2Te3 stabilizes as self-organized Mn(Bi,Sb)2Te4 septuple lamellae amongst alternating (Bi,Sb)2Te3 quintuple layers, as observed using scanning transmission electron microscopy and depth-sensitive polarized neutron reflectometry. We further demonstrate a valuable combination of magnetic and topological orders in these naturally formed Mn(Bi,Sb)2Te4-(Bi,Sb)2Te3 heterostructures that are exchange coupled with MnTe. Magnetotransport experiments and quantum magnetism simulations reveal that, above its own Neel temperature TN of 20 K, Mn(Bi,Sb)2Te4 mediates the exchange field leading to an anomalous Hall effect at the (Bi,Sb)2Te3/MnTe interface, with an enhanced interfacial TN exceeding 200 K. This novel magnetic interface in turn allows a robust and deterministic spin-orbit torque switching without an external magnetic field at a low critical current density of 300 kA cm-2. The antiferromagnetically coupled architecture of Mn(Bi,Sb)2Te4-(Bi,Sb)2Te3/MnTe, featuring unique magnetic and topological proximity effects across a chalcogenide backbone, is rich in fundamental interface physics and holds potential for practical applications in spintronics.

cond-mat.mtrl-sci↗

arXiv2025

Sb doping effect on transport behavior in the topological insulator Bi2Se3

Bismuth selenide (Bi2Se3) is a good topological insulator (TI) with its surface band Dirac point inside the bulk bandgap. However, Bi2Se3 films grown by molecular beam epitaxy (MBE) often require tuning of Fermi level near the Dirac point for optimal proximity effect with magnetic or superconducting materials. In this study, we achieve the control of the Fermi level in MBE-grown Bi2Se3 thin films by antimony (Sb) doping and systematically investigate the transport properties of these Bi2-xSbxSe3 films with different doping concentrations. Excellent topological surface conduction is attained, and weak antilocalization is observed in all Sb-doped Bi2Se3 films. While the carrier mobility shows no dependence on the Sb concentrations, indicating that the phonon scattering dominates over the impurity scattering from Sb dopants, the coherence length varies significantly with the Sb doping level at low temperatures (< 30 K), highlighting the non-negligible electron-electron interactions in the low temperature regime. Furthermore, EuS/Bi2-xSbxSe3 heterostructures are fabricated to explore proximity-induced ferromagnetism in the TI surface states. However, the long-range magnetic order is not formed in the TI surface states under our growth conditions. Our results emphasize the critical role of interface quality for realizing exchange coupling. This work offers new insights into the interplay of disorder, decoherence, and scattering mechanisms in Sb-doped Bi2Se3 thin films, providing guidance for the future study of the proximity effect in heterostructures involving Sb-doped Bi2Se3.

cond-mat.mes-hall↗

arXiv2025

Differentiating anomalous and topological Hall effects using first-order reversal curve measurements

Next generation magnetic memories rely on novel magnetic phases for information storage. Novel spin textures such as skyrmions provide one possible avenue forward due to their topological protection and controllability via electric fields. However, the common signature of these spin textures, the topological Hall effect (THE), can be mimicked by other trivial effects. Competing anomalous Hall effect (AHE) components can produce a peak in the Hall voltage similar to that of the THE, making clear identification of the THE difficult. By applying the first-order reversal curve (FORC) technique to the Hall effect in candidate topological Hall systems we can clearly distinguish between the THE and AHE. This technique allows for quantitative investigation of the THE and AHE in magnetic materials and heterostructures with topologically non-trivial spin textures. We demonstrate the technique and apply it to several examples.

cond-mat.mes-hall↗

arXiv2024

Evolution of Berry Phase and Half-Metallicity in Cr$_2$Te$_3$ in Response to Strain, Filling, Thickness, and Surface Termination

Cr$_2$Te$_3$ is a ferromagnetic, quasi-two-dimensional layered material with perpendicular magnetic anisotropy, strong spin-orbit coupling, and non-trivial band topology. The non-trivial topology results in an intrinsic anomalous Hall conductivity (AHC) that switches sign under filling and biaxial strain. Thin films can exhibit half metallicity. Using density functional theory combined with maximally localized Wannier functions, we reveal the physical origins of the sensitivity of the sign of the AHC to strain and filling, and we determine the effect of surface termination on the half metallicity. We find that thin films terminated on the Te layers are the most energetically stable, but only the thin films terminated on both sides with the partially occupied Cr layers are half metals. In bulk Cr$_2$Te$_3$, the sensitivity of the sign of the AHC to strain and filling results from the complex Fermi surface comprised of three bands. Filling of local minima and bands near anti-crossings alters the local Berry curvature consistent with the negative to positive switching of the AHC. Similarly, strain depopulates a local minimum, shifts a degenerate point closer to the Fermi energy, and causes two spin-orbit split bands to reverse their order. These findings provide a physical understanding of the evolution of the Berry phase, AHC, and half-metallicity in Cr$_2$Te$_3$.

cond-mat.mtrl-sci↗

arXiv2023

Enhanced Ferromagnetism in Monolayer Cr2Te3 via Topological Insulator Coupling

Exchange-coupled interfaces are pivotal in exploiting two-dimensional (2D) ferromagnetism. Due to the extraordinary correlations among charge, spin, orbital and lattice degrees of freedom, layered magnetic transition metal chalcogenides (TMCs) bode well for exotic topological phenomena. Here we report the realization of wafer-scale Cr2Te3 down to monolayer (ML) on insulating SrTiO3(111) and/or Al2O3(001) substrates using molecular beam epitaxy. Robust ferromagnetism persists in the 2D limit. In particular, the Curie temperature TC of 2 ML Cr2Te3 increases from 100 K to ~ 120 K when proximitized to topological insulator (TI) (Bi,Sb)2Te3, with substantially boosted magnetization as observed via polarized neutron reflectometry. Our experiments and theory strongly indicate that the Bloembergen-Rowland interaction is likely universal underlying TC enhancement in TI-coupled magnetic heterostructures. The topological-surface-enhanced magnetism in 2D TMC enables further exchange coupling physics and quantum hybrid studies, including paving the way to realize interface-modulated topological electronics.

cond-mat.mtrl-sci↗

arXiv2023

Ubiquitous Superconducting Diode Effect in Superconductor Thin Films

The macroscopic coherence in superconductors supports dissipationless supercurrents which could play a central role in emerging quantum technologies. Accomplishing unequal supercurrents in the forward and backward directions would enable unprecedented functionalities. This nonreciprocity of critical supercurrents is called superconducting (SC) diode effect. We demonstrate strong SC diode effect in conventional SC thin films, such as niobium and vanadium, employing external magnetic fields as small as 1 Oe. Interfacing the SC layer with a ferromagnetic semiconductor EuS, we further accomplish non-volatile SC diode effect reaching a giant efficiency of 65%. By careful control experiments and theoretical modeling, we demonstrate that the critical supercurrent nonreciprocity in SC thin films could be easily accomplished with asymmetrical vortex edge/surface barriers and the universal Meissner screening current governing the critical currents. Our engineering of the SC diode effect in simple systems opens door for novel technologies. Meanwhile, we reveal the ubiquity of Meissner screening effect induced SC diode effect in superconducting films, which should be eliminated with great care in the search of exotic superconducting states harboring finite-momentum Cooper pairing.

cond-mat.supr-con↗

arXiv2022

Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride

Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magnetism. Here we show that the anomalous Hall effect in pristine Cr2Te3 thin films manifests a unique temperature-dependent sign reversal at nonzero magnetization, resulting from the momentum-space Berry curvature as established by first-principles simulations. The sign change is strain tunable, enabled by the sharp and well-defined substrate/film interface in the quasi-two-dimensional Cr2Te3 epitaxial films, revealed by scanning transmission electron microscopy and depth-sensitive polarized neutron reflectometry. This Berry phase effect further introduces hump-shaped Hall peaks in pristine Cr2Te3 near the coercive field during the magnetization switching process, owing to the presence of strain-modulated magnetic domains. The versatile interface tunability of Berry curvature in Cr2Te3 thin films offers new opportunities for topological electronics.

cond-mat.mtrl-sci↗

arXiv2022

Progress and prospects in the quantum anomalous Hall effect

The quantum anomalous Hall effect refers to the quantization of Hall effect in the absence of applied magnetic field. The quantum anomalous Hall effect is of topological nature and well suited for field-free resistance metrology and low-power information processing utilizing dissipationless chiral edge transport. In this Perspective, we provide an overview of the recent achievements as well as the materials challenges and opportunities, pertaining to engineering intrinsic/interfacial magnetic coupling, that are expected to propel future development of the field.

cond-mat.mes-hall↗

arXiv2022

Sensing the local magnetic environment through optically active defects in a layered magnetic semiconductor

Atomic-level defects in van der Waals (vdW) materials are essential building blocks for quantum technologies and quantum sensing applications. The layered magnetic semiconductor CrSBr is an outstanding candidate for exploring optically active defects owing to a direct gap in addition to a rich magnetic phase diagram including a recently hypothesized defect-induced magnetic order at low temperature. Here, we show optically active defects in CrSBr that are probes of the local magnetic environment. We observe spectrally narrow (1 meV) defect emission in CrSBr that is correlated with both the bulk magnetic order and an additional low temperature defect-induced magnetic order. We elucidate the origin of this magnetic order in the context of local and non-local exchange coupling effects. Our work establishes vdW magnets like CrSBr as an exceptional platform to optically study defects that are correlated with the magnetic lattice. We anticipate that controlled defect creation allows for tailor-made complex magnetic textures and phases with the unique ingredient of direct optical access.

cond-mat.mes-hall↗

arXiv2022

A van der Waals Interface Hosting Two Groups of Magnetic Skyrmions

Multiple magnetic skyrmion phases add an additional degree of freedom for skyrmion based ultrahigh-density spin memory devices. Extending the field to two-dimensional van der Waals magnets is a rewarding challenge, where the realizable degree of freedoms (e.g. thickness, twisting angle and electrical gating) and high skyrmion density result in intriguing new properties and enhanced functionality. We report a van der Waals interface, formed by two 2D ferromagnets Cr2Ge2Te6 and Fe3GeTe2 with a Curie temperature of ~65 K and ~205 K, respectively, hosting two groups of magnetic skyrmions. Two sets of topological Hall effect are observed below 60 K when Cr2Ge2Te6 is magnetically ordered. These two groups of skyrmions are directly imaged using magnetic force microscopy. Interestingly, the magnetic skyrmions persist in the heterostructure in the remanent state with zero applied magnetic field. Our results are promising for the realization of skyrmionic devices based on van der Waals heterostructures hosting multiple skyrmion phases.

cond-mat.mes-hall↗

arXiv2020

Strain-Tuned Magnetic Anisotropy in Sputtered Thulium Iron Garnet Ultrathin Films and TIG/Au/TIG Valve Structures

Defining the magnetic anisotropy for in-plane or out-of-plane easy axis in ferrimagnetic insulators films by controlling the strain, while maintaining high-quality surfaces, is desirable for spintronic and magnonic applications. We investigate ways to tune the anisotropy of amorphous sputtered ultrathin thulium iron garnet (TIG) films, and thus tailor their magnetic properties by the thickness (7.5 to 60 nm), substrate choice (GGG and SGGG), and crystallization process. We correlate morphological and structural properties with the magnetic anisotropy of post-growth annealed films. 30 nm thick films annealed at 600 °C show compressive strain favoring an in-plane magnetic anisotropy (IPMA), whereas films annealed above 800 °C are under a tensile strain leading to a perpendicular magnetic anisotropy (PMA). Air-annealed films present a high degree of crystallinity and magnetization saturation close to the bulk value. These results lead to successful fabrication of trilayers TIG/Au/TIG, with coupling between the TIG layers depending on Au thickness. These results will facilitate the use of TIG to create various in situ clean hybrid structures for fundamental interface exchange studies, and towards the development of complex devices. Moreover, the sputtering technique is advantageous as it can be easily scaled up for industrial applications.

physics.app-ph↗

arXiv2018

Electron and hole contributions to normal-state transport in the superconducting system Sn$_{1-x}$In$_x$Te

Indium-doped SnTe has been of interest because the system can exhibit both topological surface states and bulk superconductivity. While the enhancement of the superconducting transition temperature is established, the character of the electronic states induced by indium doping remains poorly understood. We report a study of magneto-transport in a series of Sn$_{1-x}$In$_x$Te single crystals with $0.1\le x \le 0.45$. From measurements of the Hall effect, we find that the dominant carrier type changes from hole-like to electron-like at $x\sim0.25$; one would expect electron-like carriers if the In ions have a valence of $+3$. For single crystals with $x = 0.45$, corresponding to the highest superconducting transition temperature, pronounced Shubnikov-de Haas oscillations are observed in the normal state. In measurements of magnetoresistance, we find evidence for weak anti-localization (WAL). We attribute both the quantum oscillations and the WAL to bulk Dirac-like hole pockets, previously observed in photoemission studies, which coexist with the dominant electron-like carriers.

cond-mat.supr-con↗

arXiv2018

Evidence for magnetic-field-induced decoupling of superconducting bilayers in La$_{2-x}$Ca$_{1+x}$Cu$_{2}$O$_{6}$

We report a study of magnetic susceptibility and electrical resistivity as a function of temperature and magnetic field in superconducting crystals of La$_{2-x}$Ca$_{1+x}$Cu$_{2}$O$_{6}$ with $x=0.10$ and 0.15 and transition temperature $T_{c}^{\rm m} = 54$ K (determined from the susceptibility). When an external magnetic field is applied perpendicular to the CuO$_2$ bilayers, the resistive superconducting transition measured with currents flowing perpendicular to the bilayers is substantially lower than that found with currents flowing parallel to the bilayers. Intriguingly, this anisotropic behavior is quite similar to that observed for the magnetic irreversibility points with the field applied either perpendicular or parallel to the bilayers. We discuss the results in the context of other studies that have found evidence for the decoupling of superconducting layers induced by a perpendicular magnetic field.

cond-mat.supr-con↗

arXiv2017

Lifshitz transition mediated electronic transport anomaly in bulk ZrTe5

Zirconium pentatelluride ZrTe$_5$, a fascinating topological material platform, hosts exotic chiral fermions in its highly anisotropic three-dimensional Dirac band and holds great promise advancing the next-generation information technology. However, the origin underlying its anomalous resistivity peak has been under debate for decades. Here we provide transport evidence substantiating the anomaly to be a direct manifestation of a Lifshitz transition in the Dirac band with an ultrahigh carrier mobility exceeding 3$\times$10$^5$ cm$^2$ V$^{-1}$ s$^{-1}$. We demonstrate that the Lifshitz transition is readily controllable by means of carrier doping, which sets the anomaly peak temperature $T_p$. $T_p$ is found to scale approximately as $n_H^{0.27}$, where the Hall carrier concentration $n_H$ is linked with the Fermi level by $ε_F$ $\propto$ $n_H^{1/3}$ in a linearly dispersed Dirac band. This relation indicates $T_p$ monotonically increases with $ε_F$, which serves as an effective knob for fine tuning transport properties in pentatelluride-based Dirac semimetals.

cond-mat.mtrl-sci↗

arXiv2015

Understanding the role and interplay of heavy hole and light hole valence bands in the thermoelectric properties of PbSe

The thermoelectric properties of PbSe have significantly improved in recent years reaching figures of merit ZT 1.6. The transport properties of the hole doped high temperature thermoelectric material PbSe are particularly interesting and play a key role in this. Here they were analyzed over a wide temperature and hole concentration ranges. The special features observed in the variation of the experimental Seebeck coefficient, and Hall coefficient can be accounted for within the framework of a two band model. Two valence bands separated by a temperature dependent energy offset are considered. The extremum of the light hole band has a density of states mass 0.27mo at room temperature. It is non-parabolic and anisotropic and can be described by the Kane model. The extremum of the heavy hole band is isotropic and parabolic with a much larger density of states mass 2.5mo. We find that for heavily doped compositions the high mass band contributes the Seebeck coefficient even at room temperature. With rising temperature holes are transferred from the light hole to the heavy hole branch giving rise to the anomalous temperature dependent Hall coefficient which is found peaked near 650 K.

cond-mat.mtrl-sci↗