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Hang Xie

Publications and source records attributed to Hang Xie.

At least 19 recordsLinked to original sources

Bilevel Programming Approach for Image Restoration Problems with Automatically Hyperparameter Selection

In optimization-based image restoration models, the correct selection of hyperparameters is crucial for achieving superior performance. However, current research typically involves manual tuning of these hyperparameters, which is highly time-consuming and often lacks accuracy. In this paper, we concentrate on the automated selection of hyperparameters in the context of image restoration and present a bilevel programming approach that can simultaneously select the optimal hyperparameters and achieve high-quality restoration results. For implementation, we reformulate the bilevel programming problem that incorporates an inequality constraint related to the difference-of-convex functions. Following this, we address a sequence of nonsmooth convex programming problems by employing a feasibility penalty function along with a proximal point term. In this context, the nonsmooth convex programming problem uses the solution of the lower-level problem, which is derived through the alternating direction method of multipliers. Theoretically, we prove that the sequence generated by the algorithm converges to a Karush-Kuhn-Tucker stationary point of the inequality-constrained equivalent bilevel programming problem. We conduct a series of tests on both simulations and real images, which demonstrate that the proposed algorithm achieve superior restoration quality while requiring less computing time compared to other hyperparameter selection methods.

math.OC

Anomalous inverse Faraday effect for graphene quantum dots in optical vortices

Chiral photon interactions with two-dimensional (2D) materials enable unprecedented control of quantum phenomena. In this paper, we report anomalous inverse Faraday effects (IFE) in graphene quantum dots (GQDs) under linearly polarized optical vortex illumination, where transferred orbital angular momentum (OAM) generates light-induced magnetic moments. Employing our recently developed time-dependent quantum perturbation framework [Phys. Rev. B 110, 085425 (2024)], we demonstrate a counterintuitive observation: some reversed magnetic moments at off-axis positions occur-manifested as counter-rotating currents to the vortex helical wavefront. Phase-difference analysis and eigenmode decomposition resolve this anomaly, revealing that the OAM transfer efficiency is orders of magnitude weaker than its spin counterpart. This work establishes a new paradigm for optical OAM-to-magnetization conversion in quantum-engineered 2D systems.

cond-mat.mes-hall

Angular Position Sensor Based on Anisotropic Magnetoresistive and Anomalous Nernst Effect

Magnetic position sensors find extensive applications in various industrial sectors and consumer products. However, measuring angles in the full range of 0° to 360° in a wide field range using a single magnetic sensor remains a challenge. Here, we propose a magnetic position sensor based on a single Wheatstone bridge structure made from a single ferromagnetic layer. By measuring the anisotropic magnetoresistance (AMR) signal from the bridge and two sets of anomalous Nernst effect (ANE) signals from the transverse ports on two perpendicular Wheatstone bridge arms concurrently, we show that it is possible to achieve 0° to 360° angle detection using a single bridge sensor. The combined use of AMR and ANE signals allows to achieve a mean angle error in the range of 0.51° to 1.05° within a field range of 100 Oe to 10,000 Oe.

physics.app-ph

The valleytronic topological filters in silicene-like inner-edge systems

Inner edge state with spin and valley degrees of freedom is a promising candidate to design a dissipationless device due to the topological protection. The central challenge for the application of inner edge state is to generate and modulate the polarized currents. In this work, we discover a new mechanism to generate fully valley- and spin-valley-polarized current caused by the Bloch wavevector mismatch (BWM). Based on this mechanism, we design some serial-typed inner-edge filters. With once of the BWM, the coincident states could be divided into transmitted and reflected modes, which can serve as a valley or spin-valley filter. In particular, while with twice of the BWM, the incident current is absolutely reflected to support an off state with a specified valley and spin, which is different from the gap effect. These findings give rise to a new platform for designing valleytronics and spin-valleytronics.

cond-mat.mes-hall

Efficient non-collinear antiferromagnetic state switching induced by orbital Hall effect in chromium

Recently orbital Hall current has attracted attention as an alternative method to switch the magnetization of ferromagnets. Here we present our findings on electrical switching of antiferromagnetic state in Mn3Sn/Cr, where despite the much smaller spin Hall angle of Cr, the switching current density is comparable to heavy metal based heterostructures. On the other hand, the inverse process, i.e., spin-to-charge conversion in Cr-based heterostructures is much less efficient than the Pt-based equivalents, as manifested in the almost one order of magnitude smaller terahertz emission intensity and spin current induced magnetoresistance in Cr-based structures. These results in combination with the slow decay of terahertz emission against Cr thickness (diffusion length of ~11 nm) suggest that the observed magnetic switching can be attributed to orbital current generation in Cr, followed by efficient conversion to spin current. Our work demonstrates the potential of light metals like Cr as an efficient orbital/spin current source for antiferromagnetic spintronics.

cond-mat.mtrl-sci

Magnetization switching in polycrystalline Mn3Sn thin film induced by self-generated spin-polarized current

Electrical manipulation of spins is essential to design state-of-the-art spintronic devices and commonly relies on the spin current injected from a second heavy-metal material. The fact that chiral antiferromagnets produce spin current inspires us to explore the magnetization switching of chiral spins using self-generated spin torque. Here, we demonstrate the electric switching of noncollinear antiferromagnetic state in Mn3Sn by observing a crossover from conventional spin-orbit torque to the self-generated spin torque when increasing the MgO thickness in Ta/MgO/Mn3Sn polycrystalline films. The spin current injection from the Ta layer can be controlled and even blocked by varying the MgO thickness, but the switching sustains even at a large MgO thickness. Furthermore, the switching polarity reverses when the MgO thickness exceeds around 3 nm, which cannot be explained by the spin-orbit torque scenario due to spin current injection from the Ta layer. Evident current-induced switching is also observed in MgO/Mn3Sn and Ti/Mn3Sn bilayers, where external injection of spin Hall current to Mn3Sn is negligible. The inter-grain spin-transfer torque induced by spin-polarized current explains the experimental observations. Our findings provide an alternative pathway for electrical manipulation of non-collinear antiferromagnetic state without resorting to the conventional bilayer structure.

cond-mat.mtrl-sci

A vector magnetometer based on a single spin-orbit torque anomalous Hall device

In many applications, the ability to measure the vector information of a magnetic field with high spatial resolution and low cost is essential, but it is still a challenge for existing magnetometers composed of multiple sensors. Here, we report a single-device based vector magnetometer, which is enabled by spin-orbit torque, capable of measuring a vector magnetic field using the harmonic Hall resistances of a superparamagnetic ferromagnet (FM)/heavy metal (HM) bilayer. Under an ac driving current, the first and second harmonic Hall resistances of the FM/HM bilayer show a linear relationship with the vertical and longitudinal component (along the current direction) of the magnetic field, respectively. By employing a L-shaped Hall device with two orthogonal arms, we can measure all the three field components simultaneously, so as to detect both the amplitude and direction of magnetic field in a three-dimensional space. As proof of concepts, we demonstrate both angular position sensing on the three coordinate planes and vector mapping of magnetic field generated by a permanent magnet, both of which are in good agreement with the simulation results. Crosstalk between vertical and longitudinal field components at large field is discussed using theoretical models.

cond-mat.mes-hall

Giant enhancement of anomalous Hall effect in Cr modulation-doped non-collinear antiferromagnetic Mn3Sn thin films

We report on Cr doping effect in Mn3Sn polycrystalline films with both uniform and modulation doping. It is found that Cr doping with low concentration does not cause notable changes to the structural and magnetic properties of Mn3Sn, but it significantly enhances the anomalous Hall conductivity, particularly for modulation-doped samples at low temperature. A Hall conductivity as high as 184.8 Ω-1 cm-1 is obtained for modulation-doped samples at 50 K, in a sharp contrast to vanishingly small values for undoped samples at the same temperature. We attribute the enhancement to the change of Fermi level induced by Cr doping

cond-mat.mtrl-sci

Spin torque gate magnetic field sensor

Spin-orbit torque provides an efficient pathway to manipulate the magnetic state and magnetization dynamics of magnetic materials, which is crucial for energy-efficient operation of a variety of spintronic devices such as magnetic memory, logic, oscillator, and neuromorphic computing. Here, we describe and experimentally demonstrate a strategy for the realization of a spin torque gate magnetic field sensor with extremely simple structure by exploiting the longitudinal field dependence of the spin torque driven magnetization switching. Unlike most magnetoresistance sensors which require a delicate magnetic bias to achieve a linear response to the external field, the spin torque gate sensor can achieve the same without any magnetic bias, which greatly simplifies the sensor structure. Furthermore, by driving the sensor using an ac current, the dc offset is automatically suppressed, which eliminates the need for a bridge or compensation circuit. We verify the concept using the newly developed WTe2/Ti/CoFeB trilayer and demonstrate that the sensor can work linearly in the range of 3-10 Oe with negligible dc offset.

cond-mat.mes-hall

Spin Hall magnetoresistance sensor using Au$_x$Pt$_{1-x}$ as the spin-orbit torque biasing layer

We report on investigation of spin Hall magnetoresistance sensor based on NiFe/AuxPt1-x bilayers. Compared to NiFe/Pt, the NiFe/AuxPt1-x sensor exhibits a much lower power consumption (reduced by about 57%), due to 80% enhancement of spin-orbit torque efficiency of AuxPt1-x at an optimum composition of x = 0.19 as compared to pure Pt. The enhanced spin-orbit torque efficiency allows to increase the thickness of NiFe from 1.8 nm to 2.5 nm without significantly increasing the power consumption. We show that, by increasing the NiFe thickness, we were able to improve the working field range (0.86 Oe), operation temperature range (150 degree C) and detectivity (0.71 nT/sqrt(Hz) at 1 Hz) of the sensor, which is important for practical applications.

physics.app-ph

In-situ study of oxygen exposure effect on spin-orbit torque in Pt/Co bilayers in ultrahigh vacuum

Oxygen incorporation has been reported to increase the current-induced spin-orbit torque in ferromagnetic heterostructures, but the underlying mechanism is still under active debate. Here, we report on an in-situ study of the oxygen exposure effect on spin-orbit torque in Pt/Co bilayers via controlled oxygen exposure, Co and Mg deposition, and electrical measurements in ultrahigh vacuum. We show that the oxygen exposure on Pt/Co indeed leads to an increase of spin-orbit torque, but the enhancement is not as large as those reported previously. Similar enhancement of spin-orbit torque is also observed after the deposition of an MgO capping layer. The results of ab initio calculations on the Rashba splitting of Pt/Co and Pt/Co/O suggest that the enhancement is due to enhanced Rashba-Edelstein effect by surface-adsorbed oxygen. Our findings shed some light on the varying roles of oxygen in modifying the spin torque efficiency reported previously.

cond-mat.mes-hall

Steady and dynamic magnetic phase transitions in interacting quantum dots arrays coupled with leads

We apply the Hubbard model, non-equilibrium Green's function (NEGF) theory, exact diagonalization (ED) and the hierarchical equations of motion (HEOM) method to investigate abundant magnetic phase transitions in the 1D interacting quantum dots arrays (QDA) sandwiched by non-interaction leads. The spin polarization phase transitions are firstly studied with a mean-field approximation. The many-body calculation of the ED method is then used to verify such transitions. We find with the weak device-leading couplings, the anti-ferromagnetic (AF) state only exists in the uniform odd-numbered QDA or the staggered-hopping QDA systems. With increasing the coupling strength or the bias potentials, there exists the magnetism-to non-magnetism phase transition. With the spin-resolved HEOM method we also investigate the detailed dynamic phase transition process of these lead-QDA-lead systems.

cond-mat.str-el

Topological and magnetic phase transition in silicene-like zigzag nanoribbons

Spin-orbital interactions (SOI) in silicene results in the quantum spin Hall effect, while the Hubbard-induced Coulomb interaction in zigzag nanoribbons often generates a band gap with the anti-ferromagnetic (AF) spin orders on two edges. In this paper we systematically study these two joint contributions to the zigzag silicene-like nanoribbons (zSiNR). Some topological and magnetic phase transitions are investigated with different material parameters and external fields. We find when the ribbon width or the SOI value exceeds some critical value, the SOI may overcome the Coulomb interaction and the system transits from a band insulator to a topological insulator: the quantum-spin-Hall or the spin quantum-anomalous Hall state. We also find some magnetic phase transition exist in the Hubbard-dominated zSiNR systems when the exchange field or the electric field goes beyond some critical values. At last we observe a double topological/magnetic phase transition in a Hubbard-SOI-balanced zSiNR system before the magnetic and topological phases are destroyed by a strong electric field.

cond-mat.mes-hall

Modeling Three-dimensional Invasive Solid Tumor Growth in Heterogeneous Microenvironment under Chemotherapy

A systematic understanding of the evolution and growth dynamics of invasive solid tumors in response to different chemotherapy strategies is crucial for the development of individually optimized oncotherapy. Here, we develop a hybrid three-dimensional (3D) computational model that integrates pharmacokinetic model, continuum diffusion-reaction model and discrete cell automaton model to investigate 3D invasive solid tumor growth in heterogeneous microenvironment under chemotherapy. Specifically, we consider the effects of heterogeneous environment on drug diffusion, tumor growth, invasion and the drug-tumor interaction on individual cell level. We employ the hybrid model to investigate the evolution and growth dynamics of avascular invasive solid tumors under different chemotherapy strategies. Our simulations reproduce the well-established observation that constant dosing is generally more effective in suppressing primary tumor growth than periodic dosing, due to the resulting continuous high drug concentration. In highly heterogeneous microenvironment, the malignancy of the tumor is significantly enhanced, leading to inefficiency of chemotherapies. The effects of geometrically-confined microenvironment and non-uniform drug dosing are also investigated. Our computational model, when supplemented with sufficient clinical data, could eventually lead to the development of efficient in silico tools for prognosis and treatment strategy optimization.

q-bio.TO

Charge Separation and Dissipation in Molecular Wires under a Light Radiation

Photo-induced charge separation in nanowires or molecular wires had been studied in previous experiments and simulations. Most researches deal with the carrier diffusions with the classical phenomenological models, or the static energy levels by quantum mechanics calculations. Here we give a dynamic quantum investigation on the charge separation and dissipation in molecule wires. The method is based on the time-dependent non-equilibrium Green's function theory. Polyacetylene chain and poly-phenylene are used as model systems with a tight-binding Hamiltonian and the wide band limit approximation in this study. A light pulse with the energy larger than the band gap is radiated on the system. The evolution and dissipation of the non-equilibrium carriers in the open nano systems are studied. With an external electric potentials or impurity atoms, the charge separation is observed. Our calculations show that the separation behaviors of the electron/hole wave packets are related to the Coulomb interaction, light intensity and the effective masses of electron/hole in the molecular wire.

cond-mat.mes-hall

Semitransparent anisotropic and spin Hall magnetoresistance sensor enabled by spin-orbit toque biasing

We demonstrate an ultrathin and semitransparent anisotropic and spin Hall magnetoresistance sensor based on NiFe/Pt heterostructure. The use of spin-orbit torque effective field for transverse biasing allows to reduce the total thickness of the sensors down to 3 - 4 nm and thereby leading to the semitransparency. Despite the extremely simple design, the spin-orbit torque effective field biased NiFe/Pt sensor exhibits level of linearity and sensitivity comparable to those of sensors using more complex linearization schemes. In a proof-of-concept design using a full Wheatstone bridge comprising of four sensing elements, we obtained a sensitivity up to 202.9 mΩ/Oe, linearity error below 5%, and a detection limit down to 20 nT. The transmittance of the sensor is over 50% in the visible range.

cond-mat.mtrl-sci

The band calculation and local state analysis for armchair graphene-like nanoribbons with line defects

In this paper we propose an analytical method to calculate the band structures of graphene-like nanoribbons of the armchair type with arbitrary line defects or uniaxial strains. The model is based on the tight-binding model and the standing wave assumption for the armchair nanoribbons. It gives accurate band results for large supercell systems. Within this method, we analyze different local states near the line defect in the graphene and boron-nitride nanoribbons. We also derive the analytical expression for the local states in a semi-infinite graphene nanoribbon by this method and the transfer matrix technique. The criteria condition for the local states in the semi-infinite nanoribbons is also given.

cond-mat.mes-hall

Possible excited spin density wave states in zigzag graphene nanoribbons

We theoretically examine the possible spin ordered states in zigzag graphene nanoribbon in a large supercell by the self-consistent mean field method as well as the first principle calculation. In addition to the well-known anti-ferromagnetic (AF) and ferromagnetic (FM) edge states, we find that there are also some excited spin density wave (ESDW) states, the energy of which are close to the AF edge state (ground state). We thus argue that these ESDW states may coexist in experiment when the temperature is not too low. Our numerical results indicate that the allowed ESDW are commensurate; and their dispersion curve is plotted. This interesting feature results from the fact the there is a flat edge band near the Fermi surface in the graphene zigzag ribbon. Finally we use the non-equilibrium Green function theory combined with the Hubbard model to calculate some possible spin polarization states localized in the middle and terminal parts of graphene nanoribbons.

cond-mat.mes-hall