arXiv subjects

Hangman Chen

Publications and source records attributed to Hangman Chen.

5 recordsLinked to original sources

arXiv2026

Fragmenting Diffusion Pathways Confers Extraordinary Radiation Resistance in Refractory Multicomponent Alloys

The accumulation and growth of vacancy clusters under irradiation is a pivotal degradation mode for structural materials in extreme environments. Even tungsten undergoes rapid defect coarsening compromising its integrity. Here we show a tungsten multicomponent alloy that effectively fragments the vacancy diffusion network, kinetically trapping defects within localized domains. This effect originates from a broad spectrum of migration barriers and substantial vacancy-jump heterogeneity, which drives the interconnectivity of diffusion paths below the percolation threshold. Starving clusters of the necessary vacancy supply, irradiation experiments and atomic-scale defect characterizations confirm negligible defect growth as radiation doses increase by four orders of magnitude. These results provide a fundamental paradigm for percolation-engineered kinetics, offering a predictive pathway for tailoring defect diffusion and discovering inherently radiation-tolerant materials.

cond-mat.mtrl-sci↗

arXiv2025

Phase transitions of eutectic high entropy alloy AlCoCrFeNi2.1 under shock compression

High entropy alloys (HEAs) are a new class of metals that exhibit unique mechanical performance. Among HEAs, additively manufactured eutectic high entropy alloys (AM-EHEAs) have recently emerged as candidate materials for use in extreme conditions due to their simultaneous high strength and ductility. However, the deformation and structural evolution of AM-EHEAs under conditions of high pressure have not been well characterized, limiting their use in extreme applications. We present dynamic compression experiments and molecular dynamics simulations studying the structural evolution of AM-EHEA AlCoCrFeNi2.1 when compressed to pressures up to 400 GPa. Our in-situ X-ray diffraction measurements capture the appearance of fcc and bcc phases at different pressure conditions, with pure- and mixed-phase regions. Understanding the phase stability and structural evolution of the AM EHEA offers new insights to guide the development of high-performance complex materials for extreme conditions.

cond-mat.mtrl-sci↗

arXiv2024

Divergent Evolution of Slip Banding in Alloys

Metallic materials under high stress often exhibit deformation localization, manifesting as slip banding. Over seven decades ago, Frank and Read introduced the well-known model of dislocation multiplication at a source, explaining slip band formation. Here, we reveal two distinct types of slip bands (confined and extended) in alloys through multi-scale testing and modeling from microscopic to atomic scales. The confined slip band, characterized by a thin glide zone, arises from the conventional process of repetitive full dislocation emissions at Frank-Read source. Contrary to the classical model, the extended band stems from slip-induced deactivation of dislocation sources, followed by consequent generation of new sources on adjacent planes, leading to rapid band thickening. Our findings provide critical insights into atomic-scale collective dislocation motion and microscopic deformation instability in advanced structural materials, marking a pivotal advancement in our fundamental understanding of deformation dynamics.

cond-mat.mtrl-sci↗

arXiv2024

Ubiquitous short-range order in multi-principal element alloys

Recent research in multi-principal element alloys (MPEAs) has increasingly focused on the exploration and exploitation of short-range order (SRO) to enhance material performance. However, the understanding of SRO formation and the precise tuning of it within MPEAs remains poorly understood, limiting the comprehension of its impact on material properties and impeding the advancement of SRO engineering. Here, leveraging advanced additive manufacturing techniques that produce samples with a wide range of cooling rates (up to 10^7 K/s) and an improved quantitative electron microscopy method, we characterize SRO in three CoCrNi-based MPEAs to unravel the role of processing route and thermal history on SRO. Surprisingly, irrespective of the processing and thermal treatment applied, all samples exhibit similar levels of SRO, suggesting that prevalent SRO may form during the solidification process. Atomistic simulations of solidification verify that local chemical ordering arises in the liquid-solid interface (solidification front) even under the extreme cooling rate of 10^11 K/s. This phenomenon stems from the swift atomic diffusion in the supercooled liquid, which matches or even surpasses the rate of solidification. Therefore, SRO is an inherent characteristic of most MPEAs, insensitive to variations in cooling rates and annealing treatments typically available in experiments. Integrating thermal treatment with other strategies, such as mechanical deformation and irradiation, might be more effective approaches for harnessing SRO to achieve controlled material properties.

cond-mat.mtrl-sci↗

arXiv2023

Exceptional electronic transport and quantum oscillations in thin bismuth crystals grown inside van der Waals materials

Confining materials to two-dimensional forms changes the behavior of electrons and enables new devices. However, most materials are challenging to produce as uniform thin crystals. Here, we present a new synthesis approach where crystals are grown in a nanoscale mold defined by atomically-flat van der Waals (vdW) materials. By heating and compressing bismuth in a vdW mold made of hexagonal boron nitride (hBN), we grow ultraflat bismuth crystals less than 10 nanometers thick. Due to quantum confinement, the bismuth bulk states are gapped, isolating intrinsic Rashba surface states for transport studies. The vdW-molded bismuth shows exceptional electronic transport, enabling the observation of Shubnikov-de Haas quantum oscillations originating from the (111) surface state Landau levels, which have eluded previous studies. By measuring the gate-dependent magnetoresistance, we observe multi-carrier quantum oscillations and Landau level splitting, with features originating from both the top and bottom surfaces. Our vdW-mold growth technique establishes a platform for electronic studies and control of bismuth's Rashba surface states and topological boundary modes. Beyond bismuth, the vdW-molding approach provides a low-cost way to synthesize ultrathin crystals and directly integrate them into a vdW heterostructure.

cond-mat.mes-hall↗