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Hangwen Guo

Publications and source records attributed to Hangwen Guo.

At least 19 recordsLinked to original sources

Multiferroicity in the two-dimensional limit in hexagonal LuFeO3 films

Multiferroic oxides, which combine coupled ferroelectric and magnetic orders, are central to understanding correlated quantum phenomena. Yet, as thickness approaches the two-dimensional (2D) limit, both ferroelectricity and magnetism are conventionally expected to vanish due to depolarization fields and finite-size effects, respectively. Here, we demonstrate that hexagonal LuFeO3 (h-LuFeO3) retains coupled ferroelectricity and magnetism at the 2D limit, with a thickness of just one and a half unit cells. Remarkably, the ferroelectric polarization remains comparable to bulk values at room temperature, while long-range magnetism and magnetoelectric coupling persist at low temperatures. We further show that the K3 phonon mode, which mediates the polarization-magnetism coupling, is stable down to the 2D limit. Our results establish h-LuFeO3 as the first oxide system to exhibit genuine 2D-limit multiferroicity, providing a fundamental breakthrough in the long-standing quest to understand and control coupled ferroic orders at the atomic scale.

cond-mat.mtrl-sci

Sign reversal of Berry curvature triple driven by magnetic phase transition in a ferromagnetic polar metal

While the time-reversal-even (T-even) nonlinear Hall effect has been extensively discussed in nonmagnetic materials, the impact of magnetic phase transition on it remains largely overlooked. Here, we report an abrupt enhancement of the T-even nonlinear Hall effect in non-centrosymmetric SrRuO3(111) thin films during the paramagnetic-ferromagnetic transition. Scaling analysis reveals a sign reversal of both the skew scattering and side jump contributions upon the emergence of magnetism, which we attribute to the sign change of Berry curvature triple on the Fermi surface. Density functional theory calculations support this interpretation, ascribing this behavior to distinctive origins of Berry curvature hot spots in paramagnetic and ferromagnetic phases. Our findings unveil the exchange-induced dramatic nonperturbative change of nonlinear Hall effect, and establish SrRuO3(111) thin films as a promising platform for exploring magnetically tunable nonlinear transport effects.

cond-mat.mtrl-sci

Unexpected large electrostatic gating by pyroelectric charge accumulation

Pyroelectricity refers to the accumulation of charges due to changes in the spontaneous polarization of ferroelectric materials when subjected to temperature variations. Typically, these pyroelectric charges are considered unstable and dissipate quickly through interactions with the external environment. Consequently, the pyroelectric effect has been largely overlooked in ferroelectric field-effect transistors. In this work, we leverage the van der Waals interface of hBN to achieve a substantial and long-term electrostatic gating effect in graphene devices via the pyroelectric properties of a ferroelectric LiNbO3 substrate. Upon cooling, the polarization change in LiNbO3 induces high doping concentrations up to 1013 cm-2 in the adjacent graphene. Through a combination of transport measurements and non-contact techniques, we demonstrate that the pyroelectric charge accumulation, as well as its enhancement in electric fields, are responsible for this unexpectedly high doping level. Our findings introduce a novel mechanism for voltage-free electrostatic gating control with long retention.

cond-mat.mtrl-sci

Superior probabilistic computing using operationally stable probabilistic-bit constructed by manganite nanowire

Probabilistic computing has emerged as a viable approach to treat optimization problems. To achieve superior computing performance, the key aspect during computation is massive sampling and tuning on the probability states of each probabilistic bit (p-bit), demanding its high stability under extensive operations. Here, we demonstrate a p-bit constructed by manganite nanowire that shows exceptionally high stability. The p-bit contains an electronic domain that fluctuates between metallic (low resistance) and insulating (high resistance) states near its transition temperature. The probability for the two states can be directly controlled by nano-ampere electrical current. Under extensive operations, the standard error of its probability values is less than 1.3%. Simulations show that our operationally stable p-bit plays the key role to achieve correct inference in Bayesian network by strongly suppressing the relative error, displaying the potential for superior computing performance. Our p-bit also serves as high quality random number generator without extra data-processing, beneficial for cryptographic applications.

physics.app-ph

A self-learning magnetic Hopfield neural network with intrinsic gradient descent adaption

Physical neural networks using physical materials and devices to mimic synapses and neurons offer an energy-efficient way to implement artificial neural networks. Yet, training physical neural networks are difficult and heavily relies on external computing resources. An emerging concept to solve this issue is called physical self-learning that uses intrinsic physical parameters as trainable weights. Under external inputs (i.e. training data), training is achieved by the natural evolution of physical parameters that intrinsically adapt modern learning rules via autonomous physical process, eliminating the requirements on external computation resources.Here, we demonstrate a real spintronic system that mimics Hopfield neural networks (HNN) and unsupervised learning is intrinsically performed via the evolution of physical process. Using magnetic texture defined conductance matrix as trainable weights, we illustrate that under external voltage inputs, the conductance matrix naturally evolves and adapts Oja's learning algorithm in a gradient descent manner. The self-learning HNN is scalable and can achieve associative memories on patterns with high similarities. The fast spin dynamics and reconfigurability of magnetic textures offer an advantageous platform towards efficient autonomous training directly in materials.

cond-mat.dis-nn

Collective Pinning and Vortex Dynamics in type 2 superconducting thin films with Varying Magnetic Field

A perpendicular magnetic field penetrating a thin type-II superconductor slab produces vortices, with one vortex per flux quantum, h/2e. The vortices interact repulsively and form an ordered array (Abrikosov lattice) in clean systems, while strong disorder changes the lattice into a vortex glass. Here we investigate type-II superconducting films (PdBi2 and NbSe2) with surface acoustic waves (SAWs) at mK temperature. When sweeping the magnetic field at an extremely slow rate, we observe a series of spikes in the attenuation and velocity of the SAW, on average separated in field by approximately Hc1. We suspect the following scenario: The vortex-free region at the edges of the film produces an edge barrier across which the vortices can enter or leave. When the applied field changes, the induced supercurrents flowing along this edge region lowers this barrier until there is an instability. At that point, vortices avalanche into (or out of) the bulk and change the vortex crystal, suggested by the sharp jump in each such spike. The vortices then gradually relax to a new stable pinned configuration, leading to a ~30s relaxation after the jump. Our observation enriches the limited experimental evidence on the important topic of real-time vortex dynamics in superconductors.

cond-mat.supr-con

Probing disorder-induced time-reversal symmetry breaking in Josephson junctions

The relation between superconductivity and time-reversal symmetry (TRS) is one of the most fascinating problems in condensed matter physics. Although most superconductors inherently possess TRS, nonmagnetic disorder can induce states that demonstrate the breaking of this symmetry. Yet, the identification of experimental signatures of superconductivity with broken TRS remains a challenge. Here, we fabricate vertical Josephson junctions using metallic superconductor (Al) and ion bombarded Sr2RuO4 to study disorder-driven TRS breaking effects. We observe persistent magnetoresistive hysteresis behavior dependent on the disorder deposition time that provides evidence of TRS breaking below the superconducting transition temperature. Field and temperature dependent measurements suggest that the observed effects arise from disorder-induced anomalous flux in Sr2RuO4 which can be sensitively detected by superconducting Al. Our experimental results can be accounted within a physical framework of disorder-induced reconstruction of the superconducting order parameter as described within a multiband Ginzburg-Landau approach.

cond-mat.supr-con

Physical Neural Networks with Self-Learning Capabilities

Physical neural networks are artificial neural networks that mimic synapses and neurons using physical systems or materials. These networks harness the distinctive characteristics of physical systems to carry out computations effectively, potentially surpassing the constraints of conventional digital neural networks. A recent advancement known as ``physical self-learning'' aims to achieve learning through intrinsic physical processes rather than relying on external computations. This article offers a comprehensive review of the progress made in implementing physical self-learning across various physical systems. Prevailing learning strategies are discussed that contribute to the realization of physical self-learning. Despite challenges in understanding fundamental mechanism of learning, this work highlights the progress towards constructing intelligent hardware from the ground up, incorporating embedded self-organizing and self-adaptive dynamics in physical systems.

physics.app-ph

Acousto-drag photovoltaic effect by piezoelectric integration of two-dimensional semiconductors

Light-to-electricity conversion is crucial for energy harvesting and photodetection, requesting efficient electron-hole pair separation to prevent recombination. Traditional junction-based mechanisms using built-in electric fields fail in non-barrier regions. Homogeneous material harvesting under photovoltaic effect is appealing but only realized in non-centrosymmetric systems via bulk photovoltaic effect. Here we report the realization of photovoltaic effect by employing surface acoustic waves (SAW) to generate zero-bias photocurrent in a conventional layered semiconductor MoSe2. SAW induces periodic modulation to electronic bands and drags the photoexcited pairs toward the travelling direction. The photocurrent is extracted by a local barrier. The separation of generation and extraction processes suppresses recombination and yields large nonlocal photoresponse. We distinguish acousto-electric drag and electron-hole pair separation effect by fabricating devices of different configurations. The acousto-drag photovoltaic effect, enabled by piezoelectric integration, offers an efficient light-to-electricity conversion method, independent of semiconductor crystal symmetry.

cond-mat.mes-hall

Correlation between magnetic domain structures and quantum anomalous Hall effect in epitaxial MnBi2Te4 thin films

We use magnetic force microscopy (MFM) to study spatial uniformity of magnetization of epitaxially grown MnBi2Te4 thin films. Compared to films which exhibit no quantum anomalous Hall effect (QAH), films with QAH are observed to have more spatial uniformity of magnetization with larger domain size. The domain evolution upon magnetic field sweeping indicates that the magnetic domains or the spatial nonuniformity of magnetization originates from the strong pinning of the inherent sample inhomogeneity. A direct correlation between the Hall resistivity and the domain size has been established by analyzing a series of thin films with and without QAH. Our observation shows that one has to suppress the spatial nonuniformity of magnetization to allow the Hall resistivity to be quantized. The fact that a sizable longitudinal resistivity remains even for the QAH sample suggests a quantized Hall insulator scenario. Our work provides important insights to the understanding of the quantization mechanism and the dissipation of the QAH state in MnBi2Te4 system.

cond-mat.mes-hall

Electronically phase separated nano-network in antiferromagnetic insulating LaMnO3/PrMnO3/CaMnO3 tricolor superlattice

Strongly correlated materials often exhibit an electronic phase separation (EPS) phenomena whose domain pattern is random in nature. The ability to control the spatial arrangement of the electronic phases at microscopic scales is highly desirable for tailoring their macroscopic properties and/or designing novel electronic devices. Here we report the formation of EPS nanoscale network in a mono-atomically stacked LaMnO3/CaMnO3/PrMnO3 superlattice grown on SrTiO3 (STO) (001) substrate, which is known to have an antiferromagnetic (AFM) insulating ground state. The EPS nano-network is a consequence of an internal strain relaxation triggered by the structural domain formation of the underlying STO substrate at low temperatures. The same nanoscale network pattern can be reproduced upon temperature cycling allowing us to employ different local imaging techniques to directly compare the magnetic and transport state of a single EPS domain. Our results confirm the one-to-one correspondence between ferromagnetic (AFM) to metallic (insulating) state in manganite. It also represents a significant step in a paradigm shift from passively characterizing EPS in strongly correlated systems to actively engaging in its manipulation.

cond-mat.str-el

Visualizing quantum phenomena at complex oxide interfaces: an atomic view from scanning transmission electron microscopy

Complex oxide interfaces have been one of the central focuses in condensed matter physics and material science. Over the past decade, aberration corrected scanning transmission electron microscopy and spectroscopy has proven to be invaluable to visualize and understand the emerging quantum phenomena at an interface. In this paper, we briefly review some recent progress in the utilization of electron microscopy to probe interfaces. Specifically, we discuss several important challenges for electron microscopy to advance our understanding on interface phenomena, from the perspective of variable temperature, magnetism, electron energy loss spectroscopy analysis, electronic symmetry, and defects probing.

cond-mat.str-el

Role of disorder and correlations in metal-insulator transition in ultrathin SrVO3 films

Metallic oxide SrVO3 represents a prototype system for the study of the mechanism behind thickness-induced metal-to-insulator transition (MIT) or crossover in thin films due to its simple cubic symmetry with one electron in the 3d state in the bulk. Here we report a deviation of chemical composition and distortion of lattice structure existing in the initial 3 unit cells of SrVO3 films grown on SrTiO3 (001) from its bulk form, which shows a direct correlation to the thickness-dependent MIT. In-situ photoemission and scanning tunneling spectroscopy indicate a MIT at the critical thickness of ~3 unit cell (u.c.), which coincides with the formation of a (root2Xroot2)R45 surface reconstruction. However, atomically resolved scanning transmission electron microscopy and electron energy loss spectroscopy show depletion of Sr, change of V valence, thus implying the existence of a significant amount of oxygen vacancies in the 3 u.c. of SrVO3 near the interface. Transport and magneto-transport measurements further reveal that disorder, rather than electron correlations, is likely to be the main cause for the MIT in the SrVO3 ultrathin films.

cond-mat.str-el

Surface and Interface Properties of La2/3Sr1/3MnO3 Thin Films on SrTiO3 (001)

Understanding and manipulating properties emerging at a surface or an interface require a thorough knowledge of structure-property relationships. We report a study of a prototype oxide system, La2/3Sr1/3MnO3 grown on SrTiO3(001), by combining in-situ angle-resolved x-ray photoelectron spectroscopy, ex-situ x-ray diffraction, and scanning transmission electron microscopy/spectroscopy with electric transport measurements. We find that La2/3Sr1/3MnO3 films thicker than 20 unit cells (u.c.) exhibit a universal behavior with no more than one u.c. intermixing at the interface but at least 3 u.c. of Sr segregation near the surface which is (La/Sr)O terminated. The conductivity vs film thickness shows the existence of nonmetallic layers with thickness ~ 6.5 +/- 0.9 u.c., which is independent of film thickness but mainly relates to the deviation of Sr concentration near the surface region. Below 20 u.c., the surface of the films appears mixed (La/Sr)O with MnO2 termination. Decreasing film thickness to less than 10 u.c. leads to the enhanced deviation of chemical composition in the films and eventually drives the film insulating. Our observation offers a natural explanation for the thickness-driven metal-nonmetal transition in thin films based on the variation of film stoichiometry.

cond-mat.str-el

Manipulating the Polar mismatch at LaNiO3/SrTiO3 (111) Interface

Heteroepitaxial growth of transition-metal oxide films on the open (111) surface of SrTiO3 results in significant restructuring due to the polar mismatch. Monitoring the structural and composition on an atomic scale of LaNiO3/SrTiO3 (111) interface as a function of processing conditions has enabled the avoidance of the expected polar catastrophe. Using atomically resolved transmission electron microscopy and spectroscopy as well as Low energy electron diffraction, the structure of the thin film, from interface to the surface, has been studied. In this paper, we show that the proper processing can lead to a structure that is ordered, coherent with the substrate without intermediate structural phase. Angle-resolved X-ray photoemission spectroscopy shows that the oxygen content of thin films increases with the film thickness, indicating that the polar mismatch is avoided by the presence of oxygen vacancies.

cond-mat.mtrl-sci

Unusual Fe-H bonding associated with oxygen vacancies at the (001) surface of Fe3O4

An unusual Fe-H bonding rather than conventional OH bonding is identified at Fe3O4 (001) surface. This abnormal behavior is associated with the oxygen vacancies which exist on the surface region but also penetrate deep into the bulk Fe3O4. In contrast, OH bonding becomes preferential as generally expected on an ozone processed surface, which has appreciably less oxygen vacancies. Such bonding site selective behavior, depending on oxygen vacancy concentrations, is further confirmed with DFT calculations. The results demonstrate an opportunity for tuning the chemical properties of oxide surfaces or oxide clusters.

cond-mat.str-el

Polar compensation at the surface of SrTiO3 (111)

We have systematically investigated the annealing effect on the structure and composition of the polar surface of SrTiO3 (111), starting with an ex-situ chemical etch. The relative surface concentration between Ti and Sr strongly depends on both the annealing temperature and the oxygen processing. There is a critical annealing temperature at which the maximum concentration ratio of Ti to Sr is achieved, while still maintaining a (1 x 1) surface structure. We demonstrate that with proper processing it is possible to avoid surface reconstruction over a broad temperature range. Our results provide an optimal temperature window for epitaxial film growth.

cond-mat.mtrl-sci

Strain Doping: Reversible Single-Axis Control of a Complex Oxide Lattice via Helium Implantation

We report on the use of helium ion implantation to independently control the out-of-plane lattice constant in epitaxial La0.7Sr0.3MnO3 thin films without changing the in-plane lattice constants. The process is reversible by a vacuum anneal. Resistance and magnetization measurements show that even a small increase in the out-of-plane lattice constant of less than 1% can shift the metal-insulator transition and Curie temperatures by more than 100 °C. Unlike conventional epitaxy-based strain tuning methods which are constrained not only by the Poisson effect but by the limited set of available substrates, the present study shows that strain can be independently and continuously controlled along a single axis. This permits novel control over orbital populations through Jahn-Teller effects, as shown by Monte Carlo simulations on a double-exchange model. The ability to reversibly control a single lattice parameter substantially broadens the phase space for experimental exploration of predictive models and leads to new possibilities for control over materials' functional properties.

cond-mat.str-el