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Hanqi Pi

Publications and source records attributed to Hanqi Pi.

At least 19 recordsLinked to original sources

Organizing Principles for Moir\'e Quantum Matter

Moir\'e flat bands in van der Waals bilayers are usually discussed through a small set of mechanisms associated with the $\Gamma$ and $K$ valleys of hexagonal crystals, and more recently with $M$-valleys systems. Here we show that this view is incomplete. The momentum-space location and effective local orbital character of the monolayer's band edge, in conjunction with the moir\'e symmetry and the symmetry representations of the resulting bands, provide a general set of organizing variables for the emergent low-energy moir\'e Hamiltonian. Applying fully relaxed first-principles calculations, band unfolding and symmetry-representation analysis to more than 600 commensurate twisted bilayers spanning all 2D lattice classes, we identify several routes to moir\'e quantum matter beyond the conventional single-orbital paradigm. The resulting flat bands realize trigonal, honeycomb, square, checkerboard and kagome-like Hubbard models with single-orbital, multi-orbital and multi-site Hilbert spaces; spin-orbit-coupled multi-orbital flat bands exhibit symmetry-indicated topology beyond the conventional $K$-valley setting; and nonsymmorphic moir\'e symmetries enforce semimetallic flat-band connectivity. Analogous quasi-one-dimensional flat-band structures are found in $M$-valley hexagonal systems and $X$-valley square or rectangular systems resulting from emergent momentum-space nonsymmorphic symmetries. Separately, coupled multi-valley manifolds with kagome-like connectivity are identified in several systems whose parent band edges lie at non-high-symmetry points. These results establish a valley-orbital-symmetry framework for connecting parent-material electronic structure to emergent moir\'e Hamiltonians relevant to correlated, topological and symmetry-enforced moir\'e phases.

cond-mat.mtrl-sci

Quantum geometry and critical temperature enhancement in MgB$_2$ superconductivity

MgB$_2$, a phonon-mediated superconductor with record-high critical temperature $T_c\simeq 39$ K, is revisited to obtain a comprehensive theory of electrons, phonons, and their coupling with minimal ab initio input. We construct compact analytic models for the electronic structure, phonons, and electron-phonon coupling (EPC) of MgB$_2$. We show that strong in-plane B $sp^2$ bonding realizes an obstructed band structure whose natural description is a bond-centered kagome lattice, yielding small quasi-2D $\sigma$-band Fermi-surface cylinders and pronounced quantum-geometric effects. The phonon spectrum is found to closely track that of a graphene-like boron layer, but the heavy intercalated Mg atoms dominate the three acoustic branches and rigidly lift the boron modes into the optical sector, while the in-plane B-B bond-stretching mode exhibits a pronounced softening along $\Gamma$-A. By symmetry, this $\Gamma$-point bond-stretching mode is the only $\Gamma$ phonon that can couple to the $\sigma$ Fermi surface, explaining its dominant contribution to the EPC. Upon electron doping toward the doubly degenerate band edge of the $\sigma$ sheets, we find that a reduced density of states competes with enhanced EPC matrix elements. At light electron doping, ab initio calculations show that the EPC enhancement dominates, leading to an increase in $T_c$ (within the clean doping limit without disorder effects). Using the Gaussian approximation for the EPC tensor, we further show that this enhancement is overwhelmingly quantum geometric in origin, arising from a geometric EPC contribution of the small $\sigma$ Fermi surface peaked at $\Gamma$. Overall, our results provide a transparent, symmetry-based account of superconductivity in MgB$_2$ and suggest that quantum-geometric effects can be essential for shaping doping trends in phonon-mediated superconductors.

cond-mat.supr-con

Engineering topological flat bands in $\Gamma$-valley moir\'e systems with Ising-type SOC: twisted 1T-ZrS$_2$ and 1T-SnSe$_2$

Twisted moir\'e superlattices hosting topological flat bands provide a platform to explore the interplay between topology and correlations. Here we investigate topological band structures in $\Gamma$-valley moir\'e systems based on 1T-ZrS$_2$ and 1T-SnSe$_2$. Using large-scale ab initio calculations and continuum modelling, we demonstrate that both materials exhibit an approximate spin-$U(1)$ symmetry and host isolated topological moir\'e valence bands, including quantum spin Hall and high spin Chern states. By constructing a hierarchy of $\Gamma$-valley moir\'e continuum models, we show that isolated moir\'e bands carry a trivial $C_3$ symmetry indicator when the low-energy physics is described by a single effective orbital and a single layer-hybridized branch, either bonding or antibonding. Topological bands therefore arise from inter-branch and/or inter-orbital coupling. Moreover, we determine interaction-driven phase diagrams using Hartree--Fock and exact diagonalization, finding various phases tunable by twist angle, interaction strength, and displacement field. We identify specific conditions under which fractional Chern insulators are favored. Together with previous work showing that the moir\'e conduction bands of 1T-ZrS$_2$ and 1T-SnSe$_2$ realize $M$-valley twisting and host quasi-one-dimensional physics, our results establish these systems as ideal platforms for strongly correlated moir\'e physics and provide a systematic framework for understanding topological band structures in $\Gamma$-valley moir\'e materials.

cond-mat.mtrl-sci

New Crystal Structures Hide in Plain Sight: A Stress Test for AI-Guided Materials Discovery

New types of crystal structures are discovered only rarely, and the artificial intelligence (AI) models now reshaping materials discovery have so far produced new chemical compositions within known structural families rather than genuinely new structures. We report GdNiSn4 and LuNiSn4, intermetallics that adopt a previously unreported structure type, found not by computation but by exploratory synthesis. Single-crystal diffraction shows that the structure is an intergrowth of two known structural units. We then use this system as a benchmark for two leading generative models, MatterGen and DiffCSP++. For DiffCSP++, the benchmark is performed in its crystallographically constrained setting, using the required space-group and Wyckoff-position inputs. Under our sampling budget, neither model recovers the experimentally reported monoclinic structure within the structural-matching tolerance. The generated structures are evaluated without further structural relaxation using the nonmagnetic analog LuNiSn4, where we rule out 4f magnetism as the cause. Because the new structure is built from familiar building blocks, it should be derivable. We argue that encoding chemical reasoning, such as the stacking of known motifs, is a concrete path toward AI that can discover structurally novel materials.

cond-mat.mtrl-sci

Chern-Selective multi-valley Flat Bands in Twisted Mono-Bilayer and Mono-Trilayer MoTe$_2$

The interplay between moir\'e flat bands originating from different valleys can give rise to a variety of exotic quantum phases. In this work, we investigate the electronic properties of twisted mono-bilayer (A-AB) and mono-trilayer (A-ABA) MoTe$_2$ using first-principles calculations and continuum models. Unlike previous studies on twisted bilayer systems, in which low-energy flat bands originate solely from the $K/K'$ valleys, in A-AB and A-ABA twisted MoTe$_2$ (\tmt) the moir\'e bands at low energies arise from both the $\Gamma$ and $K/K'$ valleys, with spin Chern numbers $C_s=0$ (for $\Gamma$) and $C_{\uparrow/\downarrow}=\pm1$ (for $K/K'$), respectively. We show that the multi-valley moir\'e flat bands are governed by interlayer-hybridization effects, and that different stacking configurations and thicknesses tune the relative energy alignment between the $\Gamma$ and $K$ valley moir\'e flat bands. By constructing valley-resolved continuum models and performing Wannierization for the low-energy moir\'e bands, we further uncover that the Berry curvature and quantum metric distributions can be effectively tuned by the layer number and stacking configuration. Unlike other moir\'e systems, where only one kind of valley influenced the low energy physics, the simultaneous appearance of two distinct types of valleys, with different symmetries, establish A-AB and A-ABA \tmt\ as ideal platforms for studying layer-controlled multi-valley physics.

cond-mat.mtrl-sci

Emergent Interacting Phases in the Strong Coupling Limit of Twisted M-Valley Moir\'e Systems: Application to SnSe${}_2$

We construct an interacting Wannier model for both AA-stacked and AB-stacked twisted SnSe2, revealing a rich landscape of correlated quantum phases. For the AA-stacked case, the system is effectively described by a three-orbital triangular lattice model, where each orbital corresponds to a valley and exhibits an approximate one-dimensional hopping structure due to a new momentum-space non-symmorphic symmetry. By exploring the interacting phase diagram using a combination of theoretical methods, including Hartree-Fock mean-field theory and exact solutions of the spin model in certain limits, we identify several exotic quantum phases. These include a dimerized phase with finite residual entropy, valence bond solids, and quantum paramagnetism. In the AB-stacked case, the system realizes an interacting kagome lattice model, where the Wannier orbitals associated with the three valleys form three sublattices. In the strong coupling regime, we use cluster mean-field methods to demonstrate the emergence of a classical spin liquid phase due to the frustrated lattice structure. The high tunability of the moir\'e system, which allows control over both the filling and interaction strength (via twist angle), renders twisted SnSe2 a versatile platform for realizing a wide range of exotic correlated quantum phases.

cond-mat.str-el

Theory of Superconductivity in LaRu$_3$Si$_2$ and Predictions of New Kagome Flat Band Superconductors

We present a comprehensive investigation of the flat-band kagome superconductor LaRu$_3$Si$_2$, which has recently been reported to host charge density wave (CDW) order above room temperature ($T_{CDW} \simeq 400$ K). The stable crystal structure above the CDW transition is identified via soft phonon condensation and confirmed to be harmonically stable through ab initio calculations, consistent with recent X-ray diffraction refinements. The electron-phonon coupling (EPC) in LaRu$_3$Si$_2$ is found to be mode-selective, primarily driven by strong interactions between Ru-$B_{3u}$ phonons (local $x$-direction, pointing toward the hexagon center) and Ru-$A_g$ electrons (local $d_{x^2-y^2}$ orbital) within the kagome lattice. Using a spring-ball model, we identify this mode-selective EPC as a universal feature of kagome materials. Employing the newly developed Gaussian approximation of the hopping parameters, we derive an analytical expression for the EPC and demonstrate that superconductivity in LaRu$_3$Si$_2$ is mostly driven by the coupling between the kagome $B_{3u}$ phonons and the $A_g$ electrons. The impact of doping is also investigated, revealing that light hole doping (approximately one hole per unit cell) significantly enhances the superconducting critical temperature $T_c$ by 50%, whereas heavy doping induces structural instability and ferromagnetism. Furthermore, high-throughput screening identifies 3063 stable 1:3:2 kagome materials, of which 428 are predicted to exhibit superconductivity with $T_c > 1$ K, and the highest $T_c$ reaching 15 K. These findings establish LaRu$_3$Si$_2$ and related materials as promising platforms for exploring the interplay among kagome flat bands, EPC, and superconductivity. Additionally, they may offer valuable insights into potential limitations on the $T_c$ of flat-band superconductivity in real materials.

cond-mat.supr-con

A New Moir\'e Platform Based on M-Point Twisting

We introduce a new class of moir\'e systems and materials based on monolayers with triangular lattices and low-energy states at the M points of the Brillouin zone. These M-point moir\'e materials are fundamentally distinct from those derived from $\Gamma$- or K-point monolayers, featuring three time-reversal-preserving valleys related by three-fold rotational symmetry. We propose twisted bilayers of experimentally exfoliable 1T-SnSe$_2$ and 1T-ZrS$_2$ as realizations of this new class. Using extensive ab initio simulations, we develop quantitative continuum models and analytically show that the corresponding M-point moir\'e Hamiltonians exhibit emergent momentum-space non-symmorphic symmetries and a kagome plane-wave lattice in momentum space. This represents the first experimentally viable realization of a projective representation of crystalline space groups in a non-magnetic system. With interactions, these materials represent six-flavor Hubbard simulators with Mott physics, as can be seen by their flat Wilson loops. Furthermore, the presence of a non-symmorphic momentum-space in-plane mirror symmetry makes some of the M-point moir\'e Hamiltonians quasi-one-dimensional in each valley, suggesting the possibility of realizing Luttinger liquid physics. We predict the twist angles at which a series of (conduction) flat bands appear, provide a faithful continuum Hamiltonian, analyze its topology and charge density and briefly discuss several aspects of the physics of this new platform.

cond-mat.str-el

2D Theoretically Twistable Material Database

The study of twisted two-dimensional (2D) materials, where twisting layers create moir\'e superlattices, has opened new opportunities for investigating topological phases and strongly correlated physics. While systems such as twisted bilayer graphene (TBG) and twisted transition metal dichalcogenides (TMDs) have been extensively studied, the broader potential of a seemingly infinite set of other twistable 2D materials remains largely unexplored. In this paper, we define "theoretically twistable materials" as single- or multi-layer structures that allow for the construction of simple continuum models of their moir\'e structures. This excludes, for example, materials with a "spaghetti" of bands or those with numerous crossing points at the Fermi level, for which theoretical moir\'e modeling is unfeasible. We present a high-throughput algorithm that systematically searches for theoretically twistable semimetals and insulators based on the Topological 2D Materials Database. By analyzing key electronic properties, we identify thousands of new candidate materials that could host rich topological and strongly correlated phenomena when twisted. We propose representative twistable materials for realizing different types of moir\'e systems, including materials with different Bravais lattices, valleys, and strength of spin-orbital coupling. We provide examples of crystal growth for several of these materials and showcase twisted bilayer band structures along with simplified twisted continuum models. Our results significantly broaden the scope of moir\'e heterostructures and provide a valuable resource for future experimental and theoretical studies on novel moir\'e systems.

cond-mat.mtrl-sci

Universal Moir\'e-Model-Building Method without Fitting: Application to Twisted MoTe$_2$ and WSe$_2$

We develop a comprehensive method to construct analytical continuum models for moir\'e systems directly from first-principle calculations without any parameter fitting. The core idea of this method is to interpret the terms in the continuum model as a basis, allowing us to determine model parameters as coefficients of this basis through Gram-Schmidt orthogonalization. We apply our method to twisted MoTe$_2$ and WSe$_2$ with twist angles ranging from 2.13$^\circ$ to 3.89$^\circ$, producing continuum models that exhibit excellent agreement with both energy bands and wavefunctions obtained from first-principles calculations. We further propose a strategy to integrate out the higher-energy degrees of freedom to reduce the number of the parameters in the model without sacrificing the accuracy for low-energy bands. Our findings reveal that decreasing twist angles typically need an increasing number of harmonics in the moir\'e potentials to accurately replicate first-principles results. We provide parameter values for all derived continuum models, facilitating further robust many-body calculations. Our approach is general and applicable to any commensurate moir\'e materials accessible by first-principles calculations.

cond-mat.mes-hall

Discovery of a metallic room-temperature d-wave altermagnet KV2Se2O

Beyond conventional ferromagnetism and antiferromagnetism, altermagnetism is a recently discovered unconventional magnetic phase characterized by time-reversal symmetry breaking and spin-split band structures in materials with zero net magnetization. This distinct magnetic phase not only enriches the understanding of fundamental physical concepts but also has profound impacts on condense-matter physics research and practical device applications. Spin-polarized band structures have been recently observed in semiconductors MnTe and MnTe2 with vanishing net magnetization, confirming the existence of this unconventional magnetic order. Metallic altermagnets have unique advantages for exploring novel physical phenomena related to low-energy quasiparticle excitations and for applications in spintronics as electrical conductivity in metals allows the direct manipulation of spin current through electric field. Here, through comprehensive characterization and analysis of the magnetic and electronic structures of KV2Se2O, we have unambiguously demonstrated a metallic room-temperature altermaget with d-wave spin-momentum locking. The highly anisotropic spin-polarized Fermi surfaces and the spin-density-wave order emerging in the altermagnetic phase make it an extraordinary platform for designing high-performance spintronic devices and studying many-body effects coupled with the unconventional magnetism.

cond-mat.mtrl-sci

First-principles methodology for studying magnetotransport in narrow-gap semiconductors: an application to Zirconium Pentatelluride ZrTe5

The origin of anomalous resistivity peak and accompanied sign reversal of Hall resistivity of ZrTe$_5$ has been under debate for a long time. Although various theoretical models have been proposed to account for these intriguing transport properties, a systematic study from first principles view is still lacking. In this work, we present a first principles calculation combined with Boltzmann transport theory to investigate the transport properties in narrow-gap semiconductors at different temperatures and doping densities within the relaxation time approximation. Regarding the sensitive temperature-dependent chemical potential and relaxation time of semiconductors, we take proper approximation to simulate these two variables, and then comprehensively study the transport properties of ZrTe$_5$ both in the absence and presence of an applied magnetic field. Without introducing topological phases and correlation interactions, we qualitatively reproduced crucial features observed in experiments, including zero-field resistivity anomaly, nonlinear Hall resistivity with sign reversal, and non-saturating magnetoresistance at high temperatures. Our calculation allows a systematic interpretation of the observed properties in terms of multi-carrier and Fermi surface geometry. Our method can be extended to other narrow-gap semiconductors and further pave the way to explore interesting and novel transport properties of this field.

cond-mat.mtrl-sci

Complex field-, temperature-, and angle-dependent Hall effects from intrinsic Fermi surface revealed by first-principles calculations

The Hall effect, ever intriguing since its discovery, has spurred the exploration of its phenomena, intensified by advances in topology and novel materials. Differentiating the ordinary Hall effect from extraordinary properties like the anomalous Hall effect (AHE) is challenging, especially in materials with topological origins. In our study, we leverage semiclassical Boltzmann transport theory and first-principles calculations within the relaxation time approximation to analyze Hall effects comprehensively. We have found that the complex magnetic field dependence of ordinary Hall effect, including the sign reversals, appearing of plateau and nonlinearity, can be understood and reproduced by our approach both for multiband models and realistic topological materials of ZrSiS and PtTe2. The Hall resistivity versus temperature and magnetic fields can be well scaled, similar to Kohler's rule for longitudinal resistivity. This methodology can also accurately model the angular dependent Hall effects such as planar Hall effects of bismuth. These findings indicate that the dependencies of various Hall effects and magnetoresistance on magnetic fields are mainly determined by the details of Fermi surface and the relaxation time. The intrinsic Fermi surface determines the carriers' density, type, and velocity, while the later is mostly influenced by extrinsic factors, such as quality of sample with defects, impurities, and domains. This insight might simplify the understanding of several seemingly complex transport phenomena in nonmagnetic materials, with no need for hypotheses of other sophisticated mechanisms, such as magnetization-induced AHE, Lifshitz transition-induced changes in carrier type, exotic orders like charge density wave, or some delicate scattering of carriers with chiral or nonreciprocal dependence. Finally, we also discussed the Hall effects contribute from the Berry curvature.

cond-mat.mtrl-sci

Non-centrosymmetric, transverse structural modulation in SrAl4, and elucidation of its origin in the BaAl4 family of compounds

At ambient conditions SrAl4 adopts the BaAl4 structure type with space group I4/mmm. It undergoes a charge-density-wave (CDW) transition at TCDW = 243 K, followed by a structural transition at TS = 87 K. Temperature-dependent single-crystal X-ray diffraction (SXRD) leads to the observation of incommensurate superlattice reflections at q = \sigma c* with \sigma = 0.1116 at 200 K. The CDW has orthorhombic symmetry with the acentric superspace group F222(00sigma)00s, where F222 is a subgroup of Fmmm as well as of I4/mmm. Atomic displacements mainly represent a transverse wave, with displacements that are 90 deg out of phase between the two diagonal directions of the I-centered unit cell, resulting in a helical wave. Small longitudinal displacements are provided by the second harmonic modulation. The orthorhombic phase realized in SrAl4 is similar to that found in EuAl4. Electronic structure calculations and phonon calculations by density functional theory (DFT) have failed to reveal the mechanism of CDW formation. However, DFT reveals that Al atoms dominate the density of states near the Fermi level, thus, corroborating the SXRD measurements. SrAl4 remains incommensurately modulated at the structural transition, where the symmetry lowers from orthorhombic to b-unique monoclinic. We have identified a simple criterion, that correlates the presence of a phase transition with the interatomic distances. Only those compounds XAl4-xGax(X = Ba, Eu, Sr, Ca; 0 < x <4) undergo phase transitions, for which the ratio c/a falls within the narrow range 2.51 < c/a < 2.54.

cond-mat.str-el

Gate-tunable multiband transport in ZrTe5 thin devices

Interest in ZrTe5 has been reinvigorated in recent years owing to its potential for hosting versatile topological electronic states and intriguing experimental discoveries. However, the mechanism of many of its unusual transport behaviors remains controversial, for example, the characteristic peak in the temperature-dependent resistivity and the anomalous Hall effect. Here, through employing a clean dry-transfer fabrication method under inert environment, we successfully obtain high-quality ZrTe5 thin devices that exhibit clear dual-gate tunability and ambipolar field effects. Such devices allow us to systematically study the resistance peak as well as the Hall effect at various doping densities and temperatures, revealing the contribution from electron-hole asymmetry and multiple-carrier transport. By comparing with theoretical calculations, we suggest a simplified semiclassical two-band model to explain the experimental observations. Our work helps to resolve the long-standing puzzles on ZrTe5 and could potentially pave the way for realizing novel topological states in the two-dimensional limit.

cond-mat.mes-hall

Magnetic bulk photovoltaic effect as a probe of magnetic structures of $EuSn_2As_2$

The bulk photovoltaic effect (BPVE) is a second-order optical process in noncentrosymmetric materials that converts the light into DC currents. BPVE is classified into shift current and injection current according to the generation mechanisms, whose dependence on the polarization of light is sensitive to the spatial and time-reversal symmetry of materials. In this work, we present a comprehensive study on the BPVE response of $EuSn_2As_2$ with different magnetic structures through symmetry analysis and first-principles calculation. We demonstrate that the interlayer antiferromagnetic (AFM) $EuSn_2As_2$ of even-layer breaks the inversion symmetry and has the second-order optical responses. Moreover, the bilayer AFM $EuSn_2As_2$ not only displays distinct BPVE responses when magnetic moments align in different directions, but also shows symmetry-related responses in two phases which have mutually perpendicular in-plane magnetic moments. Due to the dependence of BPVE responses on the polarization of light and magnetic symmetry, these magnetic structures can be distinguished by the circular polarized light with well-designed experiments. Our work demonstrates the feasibility of the BPVE response as a tool to probe the magnetic structure.

cond-mat.mtrl-sci

Optical spectroscopy and band structure calculations of structural phase transition in the Vanadium-based kagome metal ScV$_6$Sn$_6$

In condensed matter physics, materials with kagome lattice display a range of exotic quantum states, including charge density wave (CDW), superconductivity and magnetism. Recently, the intermetallic kagome metal ScV6Sn6 was discovered to undergo a first-order structural phase transition with the formation of a root3xroot3x3 CDW at around 92 K. The bulk electronic band properties are crucial to understanding the origin of the structural phase transition. Here, we conducted an optical spectroscopy study in combination with band structure calculations across the structural transition. Our findings showed abrupt changes in the optical reflectivity/conductivity spectra as a result of the structural transition, without any observable gap formation behavior. The optical measurements and band calculations actually reveal a sudden change of the band structure after transition. It is important to note that this phase transition is of the first-order type, which distinguishes it from conventional density-wave type condensations. Our results provide an insight into the origin of the structural phase transition in this new and unique kagome lattice.

cond-mat.str-el

Highly in-plane anisotropic optical properties of fullerene monolayers

Both the intrinsic anisotropic optical materials and fullerene-assembled 2D materials have attracted a lot of interests in fundamental science and potential applications. The synthesis of a monolayer (ML) fullerene makes the combination of these two features plausible. In this work, using first-principles calculations, we systematically study the electronic structure, optical properties of quasi-hexagonal phase (qHP) ML and quasi-tetragonal phase (qTP) ML fullerenes. The calculations of qHP ML show that it is a semi-conductor with small anisotropic optical absorption, which agrees with the recent experimental measurements. However, the results for qTP ML reveal that it is a semimetal with highly in-plane anisotropic absorption. The dichroic ratio, namely the absorption ratio of $x$- and $y$-polarized light $\alpha$$_x$$_x$/$\alpha$$_y$$_y$, is around 12 at photon energy of 0.29 eV. This anisotropy is much more pronounced when the photon energy is between 0.7 and 1.4 eV, where $\alpha$$_x$$_x$ becomes nearly zero while $\alpha$$_y$$_y$ is more than two orders of magnitude larger. This indicates qTP ML as a candidate for long-pursuit lossless metal and a potential material for atomically thin polarizer. We hope this will stimulate further experimental efforts in the study of qTP ML and other fullerene-assembled 2D materials.

cond-mat.mtrl-sci