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Hans Jürgen von Bardeleben

Publications and source records attributed to Hans Jürgen von Bardeleben.

5 recordsLinked to original sources

Computational identification of Ga-vacancy related electron paramagnetic resonance centers in $β$-Ga$_2$O$_3$

A combined experimental/theoretical study of the EPR in irradiated $β$-Ga$_2$O$_3$ is presented. Four EPR spectra, two $S=1/2$ and two $S=1$, are observed after high-energy proton or electron irradiation. One of the S=1/2 spectra (EPR1) can be observed at room temperature and below and is characterized by the spin Hamiltonian parameters $g_b=2.0313$, $g_c=2.0079$, $g_{a*}=2.0025$ and a quasi isotropic hyperfine interaction with two equivalent Ga neighbors of $~\sim$14 G on $^{69}$Ga. The second (EPR2) is observed after photoexcitation (with threshold 2.8 eV) at low temperature and is characterized by $g_b=2.0064$, $g_c=2.0464$, $g_{a*}=2.0024$ and a quasi isotropic hyperfine interaction with two equivalent Ga neighbors of 10 G. A spin $S=1$ spectrum with a similar g-tensor and a 50\% reduced hyperfine splitting accompanies each of these, which is indicative of a defect of two weakly coupled $S=1/2$ centers. DFT calculations of the magnetic resonance fingerprint of a wide variety of native defect models are carried out to identify these EPR centers in terms of specific defect configurations. The EPR1 center is proposed to correspond to a complex of two tetrahedral $V_\mathrm{Ga1}$ with an interstitial Ga in between them. This model was previously shown to have lower energy than the simple tetrahedral Ga vacancy and has a $2-/3-$ transition level higher than other $V_\mathrm{Ga}$ related models, which would explain why the other ones are already in their diamagnetic $3-$ state and are thus not observed if the Fermi level is pinned approximately at this level. The EPR2 spectra are proposed to correspond to the octahedral $V_\mathrm{Ga2}$. Models based on self-trapped holes and oxygen interstitials are ruled out because they would have hyperfine interaction with more than two Ga nuclei and because they can not support a corresponding $S=1$ center.

cond-mat.mtrl-sci↗

Proton Irradiation Induced Defects in \b{eta}-Ga2O3: a combined EPR and Theory Study

Proton irradiation of both n-type and semi-insulating bulk samples of \b{eta}-Ga2O3 leads to the formation of one paramagnetic defect with spin S=1/2, monoclinic point symmetry, a g-tensor with principal values of gb=2.0313, gc=2.0079, ga*= 2.0025 and quasi isotropic superhyperfine interaction of 13G with two equivalent Ga neigbours. Its high introduction rate indicates it to be a primary irradiation induced defect. At low temperature, photoexcitation transforms this defect into a different metastable S=1/2 center with principal g-values of gb=2.0064, gc=2.0464, ga*= 2.0024 and a reduced hyperfine interaction of 9G. This metastable defect is stable up to T=100K, when it switches back to the previous configuration. Density functional theory calculations of the Spin Hamiltonian parameters of various intrinsic defects are carried out using the Gauge Including Projector Augmented Wave method in order to determine the microscopic structure of these defects.Our results do not support the intuitive model of the isolated octahedral or tetrahedral gallium vacancy, VGa2-, but favor the model of a gallium vacancy complex VGa-Gai-VGa.

cond-mat.mtrl-sci↗

Bright room temperature single photon source at telecom range in cubic silicon carbide

Single photon emitters (SPEs) play an important role in a number of quantum information tasks such as quantum key distributions. In these protocols, telecom wavelength photons are desired due to their low transmission loss in optical fibers. In this paper, we present a study of bright single-photon emitters in cubic silicon carbide (3C-SiC) emitting in the telecom range. We find that these emitters are photostable and bright at room temperature with a count rate of ~ MHz. Together with the fact that SiC is a growth and fabrication-friendly material, our result may pave the way for its future application in quantum communication technology applications.

physics.optics↗

Surface acoustic wave driven ferromagnetic resonance in (Ga,Mn)(As,P) epilayers

Interdigitated transducers were used to generate and detect surface acoustic waves on a thin layer of (Ga,Mn)(As,P). The out-of-plane uniaxial magnetic anisotropy of this dilute magnetic semiconductor is very sensitive to the strain of the layer, making it an ideal test material for the dynamic control of magnetization via magneto-striction. The time-domain measurement of the amplitude and phase of the transmitted SAW during magnetic field sweeps indicated a clear resonant behavior at a field close to the one calculated to give a precession frequency equal to the SAW frequency. A resonance was observed from 5K to 85K, just below the Curie temperature of the layer. A full analytical treatment of the coupled magnetization/acoustic dynamics showed that the magneto-strictive coupling modifies the elastic constants of the material and accordingly the wave-vector solution to the elastic wave equation. The shape and position of the resonance were well reproduced by the calculations, in particular the fact that velocity (phase) variations resonated at lower fields than the acoustic attenuation variations.

cond-mat.mtrl-sci↗

Irreversible magnetization switching using surface acoustic waves

An analytical and numerical approach is developped to pinpoint the optimal experimental conditions to irreversibly switch magnetization using surface acoustic waves (SAWs). The layers are magnetized perpendicular to the plane and two switching mechanisms are considered. In precessional switching, a small in-plane field initially tilts the magnetization and the passage of the SAW modifies the magnetic anisotropy parameters through inverse magneto-striction, which triggers precession, and eventually reversal. Using the micromagnetic parameters of a fully characterized layer of the magnetic semiconductor (Ga,Mn)(As,P), we then show that there is a large window of accessible experimental conditions (SAW amplitude/wave-vector, field amplitude/orientation) allowing irreversible switching. As this is a resonant process, the influence of the detuning of the SAW frequency to the magnetic system's eigenfrequency is also explored. Finally, another - non-resonant - switching mechanism is briefly contemplated, and found to be applicable to (Ga,Mn)(As,P): SAW-assisted domain nucleation. In this case, a small perpendicular field is applied opposite the initial magnetization and the passage of the SAW lowers the domain nucleation barrier.

cond-mat.mtrl-sci↗