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Hans Peter Oepen

Publications and source records attributed to Hans Peter Oepen.

5 recordsLinked to original sources

Polarization amplification by spin-doping in nanomagnetic/graphene hybrid systems

The generation of non-equilibrium electron spin polarization, spin transport, and spin detection are fundamental in many quantum devices. We demonstrate that a lattice of magnetic nanodots enhances the electron spin polarization in monolayer graphene via carrier exchange. We probed the spin polarization through a resistively-detected variant of electron spin resonance (ESR) and observed resonance amplification mediated by the presence of the nanodots. Each nanodot locally injects a surplus of spin-polarized carriers into the graphene, and the ensemble of all "spin hot spots" generates a non-equilibrium electron spin polarization in the graphene layer at macroscopic lengths. This occurs whenever the interdot distance is comparable or smaller than the spin diffusion length.

cond-mat.mes-hall↗

Measuring the Dzyaloshinskii-Moriya interaction of the epitaxial Co/Ir(111) interface

The in-plane orientation of the magnetization in the center of domain walls is measured in Co/Ir(111) as a function of Co thickness via scanning electron microscopy with polarization analysis. Uncapped, thermally evaporated cobalt on an Ir(111) single-crystal surface is imaged in situ in ultra-high vacuum. The initial pseudomorphic growth with an atomically flat interface of cobalt on iridium ensures comparability to theoretical calculations and provides a study of an interface that is as ideal as possible. Below a cobalt thickness of 8.8 monolayers, the magnetic domain walls are purely Néel oriented and show a clockwise sense of rotation. For larger thicknesses the plane of rotation changes and the domain walls show a significant Bloch-like contribution, allowing to calculate the strength of the Dzyaloshinskii-Moriya interaction (DMI) from energy minimization. From the angle between the plane of rotation and the domain-wall normal an interfacial DMI parameter $D_s = -(1.07 \pm 0.05)$ pJ/m is determined, which corresponds to a DMI energy per bond between two Co atoms at the interface of $d_{tot} = -(1.04 \pm 0.05)$ meV.

cond-mat.mes-hall↗

Implications of a temperature-dependent magnetic anisotropy for superparamagnetic switching

The macroscopic magnetic moment of a superparamagnetic system has to overcome an energy barrier in order to switch its direction. This barrier is formed by magnetic anisotropies in the material and may be surmounted typically after 10^9 to 10^12 attempts per second by thermal fluctuations. In a first step, the associated switching rate may be described by a Neel-Brown-Arrhenius law, in which the energy barrier is assumed as constant or a given temperature. Yet, magnetic anisotropies in general depend on temperature themselves which is known to modify the Neel-Brown-Arrhenius law. We illustrate quantitatively the implications of a temperature-dependent anisotropy on the switching rate and in particular for the interpretation of the prefactor as an attempt frequency. In particular, we show that realistic numbers for the attempt frequency are obtained when the temperature dependence of the anisotropy is taken into account.

cond-mat.mes-hall↗

Scanning electron microscopy with polarization analysis for multilayered chiral spin textures

We show that scanning electron microscopy with polarization analysis (SEMPA) that is sensitive to both in-plane magnetization components can be used to image the out-of-plane magnetized multi-domain state in multilayered chiral spin textures. By depositing a thin layer of Fe on top of the multilayer we image the underlying out-of-plane domain state through the mapping of its stray fields in the Fe. We also demonstrate that SEMPA can be used to image the domain wall chirality in these systems after milling away the capping layer and imaging the topmost magnetic layer directly.

cond-mat.mes-hall↗

Influence of elastically pinned magnetic domain walls on magnetization reversal in multiferroic heterostructures

In elastically coupled multiferroic heterostructures that exhibit full domain correlations between ferroelectric and ferromagnetic sub-systems, magnetic domain walls are firmly pinned on top of ferroelectric domain boundaries. In this work we investigate the influence of pinned magnetic domain walls on the magnetization reversal process in a Co40Fe40B20 wedge film that is coupled to a ferroelectric BaTiO3 substrate via interface strain transfer. We show that the magnetic field direction can be used to select between two distinct magnetization reversal mechanisms, namely (1) double switching events involving alternate stripe domains at a time or (2) synchronized switching of all domains. Furthermore, scaling of the switching fields with domain width and film thickness is also found to depend on field orientation. These results are explained by considering the dissimilar energies of the two types of pinned magnetic domain walls that are formed in the system.

cond-mat.mtrl-sci↗