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Hansika I. Sirikumara

Publications and source records attributed to Hansika I. Sirikumara.

2 recordsLinked to original sources

Stabilization of Stone-Wales Defects in Metal-supported Graphene

The characteristics of graphene-metal interfaces play a decisive role in their electronic, optoelectronic, and mechanical applications. Properties such as charge transfer across the interface become particularly significant in the presence of topological defects. The stability of Stone Wales (SW) defects in graphene is governed by the balance between three energy descriptors, the activation energy, formation energy, and restoration energy. By comparing the energy parameters obtained from first-principles density functional theory calculations, we show that SW defect formation is energetically more favorable on metal-supported graphene. Our calculations for SW defects in graphene/Cu(111) and graphene/Al(111) systems indicate only a little dependence of energy profile on the type of metal. The presence of the metal substrate leads to a $\sim$ 12\% increase in the formation energy and a $\sim$ 20\% reduction in the activation energy, which together favor the formation of Stone Wales defects. Although the restoration energy decreases by about $\sim$ 35\% in metal-supported graphene, it remains significantly higher to prevent self-healing. As a result, once formed, the Stone Wales defects are likely to remain stable, suggesting the possibility of terminal SW defect formation in metal-supported graphene.

cond-mat.mtrl-sci↗

Tunable Indirect-Direct Transition of Few-Layer SnSe via Interface Engineering

Tin Selenide (SnSe) is one of the best thermoelectric materials reported to date. The possibility of growing few-layer SnSe helped boost the interest in this long-known, earth abundant material. Pristine SnSe in bulk, mono- and few-layer forms are reported to have indirect electronic bandgaps. Possible indirect-direct transition in SnSe is attractive for its optoelectronic-related applications. Based on the results from first principles Density Functional Theory (DFT) calculations, we carefully analyzed electronic band structures of bulk, and bilayer SnSe with various interlayer stackings. We report the possible stacking-dependent indirect-direct transition of bilayer SnSe. By further analysis, our results reveal that it is the directionality of interlayer interactions that determine the critical features of their electronic band structures. In fact, by engineering the interface stacking between layers, it is possible to achieve few-layer SnSe with direct electronic band gap. This study provides fundamental insights to design few-layer SnSe and SnSe heterostructures for electronic/optoelectronic applications, where the interface geometry plays a fundamental role in device performance.

cond-mat.mtrl-sci↗