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Hanu Arava

Publications and source records attributed to Hanu Arava.

9 recordsLinked to original sources

Flux Jamming and Bimodal Dynamics in Bounded Spin Networks

We present a quantitative framework for predicting how kinetic barriers governing temperature dependent relaxation arise in finite square magnetic networks. By formulating a series of non homogeneous transfer matrices from the adjacency spectrum of the underlying graph, we show how local coordination shapes the energy landscape and identifies geometric regions that act as bottlenecks for flux transport. Our approach predicts bimodal kinetic behavior, in which long intervals of trapping within charge compensated manifolds are interrupted by sudden, avalanche like relaxation episodes. Representing finite systems with a Husimi tree, we find that low temperature data from forty generations collapse onto a single curve consistent with a power law scaling form, implying that boundary truncation alone can give rise to scale invariant flux arrest, analogous to athermal granular jamming. By employing transition probabilities constructed from local Boltzmann factors, this framework connects equilibrium energy landscape concepts to non equilibrium phenomena, including kinetic arrest and telegraph noise, thereby enabling the prediction and design of intermittent transport in finite, frustrated networks.

cond-mat.mtrl-sci

Physics-Informed Deep Image Prior Reconstruction of In-Plane Magnetization from Scanning NV Magnetometry

Reconstructing magnetization in nanoscale magnetic thin films is essential for developing next-generation memory, sensors, and various spintronic technologies. However, this remains challenging due to the ill-posed nature of the stray field inverse problem, i.e., there are infinitely many magnetization solutions to a given stray field distribution. Here, we demonstrate that a physics-informed deep image prior (DIP) framework, using a simple convolutional autoencoder conditionally achieves a reasonable qualitative and quantitative reconstruction of complex in-plane magnetization patterns from scanning NV magnetometry. We find that the orientation of user-defined masks implemented to restrict the reconstruction solution space dramatically affects convergence. The optimal alignment of the mask improves the reconstruction signal-to-noise ratio by up to $\SI{3}{\decibel}$, thereby also serving as a diagnostic tool. The DIP approach requires no pre-trained datasets and is considered computationally less intensive as compared to supervised learning approaches. We analyze both Landau and dipole domain structures in lithographically patterned Permalloy nanostructures by incorporating experimentally-guided spatial constraints. Complementary magnetic force microscopy measurements were carried out to support the Scanning NV measurements.

cond-mat.dis-nn

Synthesis and transport properties of epitaxial Bi (111) films on GaAs (111) substrates

In recent decades, the growth of ultrathin epitaxial bismuth (Bi) films on various substrates has garnered interest due to their unique electronic properties. We report upon the growth and electrical transport properties of epitaxial Bi (111) films in the thickness range of 5-32 nm deposited directly on GaAs (111) substrates, without a buffer layer. The quality of Bi films is found to depend on conditions for substrate treatment using Ar+ ion-milling and annealing. Substrates milled at low ion beam currents display poor surface reconstruction after annealing, which hinders the growth of high-quality films. In contrast, substrates milled under optimized conditions led to reconstructed surfaces upon annealing, resulting in epitaxial Bi films with predominantly single-domain orientation. Although epitaxial films formed in both cases, transport measurements indicated significantly higher conductivity for films grown on optimally treated substrates. Measurements at low temperatures suggest that the transport properties are dominated by a surface state with high mobility electrons. Magneto-transport measurements suggest that conductivity and mobility improve progressively with increasing film thickness. For the thinnest 5 nm film, a hole-like state emerges, presumably as the electron-like state is gapped out. These results provide a robust methodology for growing high-quality epitaxial Bi films on GaAs (111) and offer insights into their unique transport properties, and our ability to tune them.

cond-mat.mtrl-sci

Automated Imaging of the Annihilation of a Transverse Domain Wall in Patterned Magnetic Thin Films

Imaging the magnetic domain wall behavior in patterned thin films under external stimuli can enable understanding the underlying energy landscape as well as the role of local microstructure and defects. We present an automated workflow for in-situ Lorentz transmission electron microscopy to image magnetic domain walls at the nanometer length scale and at a time resolution in the sub-millisecond regime - the latter of which is limited by the speed of the available camera. Our workflow is modular and can be broadly applied to various types of in-situ experiments, taking us a step closer to the future of autonomous imaging of nanomagnetic films with electron microscopy. Using our workflow, we show the transformation of a transverse domain wall with sub-millisecond time resolution under the application of an in-situ transverse magnetic field, a study of whose dynamics are essential in the design of future domain wall mediated spintronic device applications.

cond-mat.mtrl-sci

Real Space Imaging of Field-Driven Decision-Making in Nanomagnetic Galton Boards

A possible spintronic route to hardware implementation for decision making involves injecting a domain wall into a bifurcated magnetic nanostrip resembling a Y-shaped junction. A decision is made when the domain wall chooses a particular path through the bifurcation. Recently, it was shown that a structure like a nanomagnetic Galton Board, which is essentially an array of interconnected Y-shaped junctions, produces outcomes that are stochastic and therefore relevant to artificial neural networks. However, the exact mechanism leading to the robust nature of randomness is unknown. Here, we directly image the decision-making process in nanomagnetic Galton Boards using Lorentz transmission electron microscopy. We identify that the stochasticity in nanomagnetic Galton Boards arises as a culmination of: (1) topology of the injected domain wall, (2) local disorder, and (3) strength of the applied field. Our results pave the way to a detailed understanding of stochasticity in nanomagnetic networks.

physics.app-ph

A15 Phase Ta3Sb Thin Films: Direct Synthesis, Charge Transport and Spin-Orbit Torque

Ta3Sb is one of the A15 compounds that have been predicted to have giant spin Hall conductivities due to the gapped Dirac-like band crossings in their electronic structures. We use co-sputtering to directly synthesize thin films of Ta3Sb and identify a large window of Ta:Sb flux ratio that permits the formation of single-phase A15 structure. These sputtered films have an actual Ta:Sb atomic ratio of 4:1 as determined from Rutherford backscattering spectrometry. Their high resistivity, at the Mott-Ioffe-Regel limit, suggests that the electron mean free path is comparable to interatomic distances. From harmonic Hall and spin-torque ferromagnetic resonance measurements, the intrinsic spin Hall conductivity of thin film Ta3Sb is estimated to be in the range of -526 to -1230 (hbar/e) S/cm at 300 K, lower in magnitude than the predicted value of -1400 (hbar/e) S/cm. First-principles calculations of the electronic structure show that the discrepancy is consistent with an increase of the Fermi level due to the non-ideal stoichiometry needed to stabilize the A15 structure.

cond-mat.mtrl-sci

Large Exotic Spin Torques in Antiferromagnetic Iron Rhodium

Spin torque is a promising tool for driving magnetization dynamics for novel computing technologies. These torques can be easily produced by spin-orbit effects, but for most conventional spin source materials, a high degree of crystal symmetry limits the geometry of the spin torques produced. Magnetic ordering is one way to reduce the symmetry of a material and allow exotic torques, and antiferromagnets are particularly promising because they are robust against external fields. We present spin torque ferromagnetic resonance measurements and second harmonic Hall measurements characterizing the spin torques in antiferromagnetic iron rhodium alloy. We report extremely large, strongly temperature-dependent exotic spin torques with a geometry apparently defined by the magnetic ordering direction. We find the spin torque efficiency of iron rhodium to be (330$\pm$150) % at 170 K and (91$\pm$32) % at room temperature. We support our conclusions with theoretical calculations showing how the antiferromagnetic ordering in iron rhodium gives rise to such exotic torques.

cond-mat.mtrl-sci

Large Spin-to-Charge Conversion in Ultrathin Gold-Silicon Multilayers

Investigation of the spin Hall effect in gold has triggered increasing interest over the past decade, since gold combines the properties of a large bulk spin diffusion length and strong interfacial spin-orbit coupling. However, discrepancies between the values of the spin Hall angle of gold reported in the literature have brought into question the microscopic origin of the spin Hall effect in Au. Here, we investigate the thickness dependence of the spin-charge conversion efficiency in single Au films and ultrathin Au/Si multilayers by non-local transport and spin-torque ferromagnetic resonance measurements. We show that the spin-charge conversion efficiency is strongly enhanced in ultrathin Au/Si multilayers, reaching exceedingly large values of 0.99 +/- 0.34 when the thickness of the individual Au layers is scaled down to 2 nm. These findings reveal the coexistence of a strong interfacial spin-orbit coupling effect which becomes dominant in ultrathin Au, and bulk spin Hall effect with a relatively low bulk spin Hall angle of 0.012 +/- 0.005. Our experimental results suggest the key role of the Rashba-Edelstein effect in the spin-to-charge conversion in ultrathin Au.

cond-mat.mtrl-sci

Engineering Relaxation Pathways in Building Blocks of Artificial Spin Ice for Computation

Nanomagnetic logic, which makes use of arrays of dipolar-coupled single domain nanomagnets for computation, holds promise as a low power alternative to traditional computation with CMOS. Beyond the use of nanomagnets for Boolean logic, nanomagnets can also be exploited for non-deterministic computational schemes such as edge detection in images and for solving the traveling salesman problem. Here, we demonstrate the potential of arrangements of thermally-active nanomagnets based on artificial spin ice for both deterministic and probabilistic computation. This is achieved by engineering structures that follow particular thermal relaxation pathway consisting of a sequence of reorientations of magnet moments from an initial field-set state to a final low energy output state. Additionally, we demonstrate that it is possible to tune the probability of attaining a particular final low-energy state, and therefore the likelihood of a given output, by modifying the intermagnet distance. Finally, we experimentally demonstrate a scheme to connect several computational building blocks for complex computation.

physics.app-ph