arXiv subjects

Hanwei Gao

Publications and source records attributed to Hanwei Gao.

5 recordsLinked to original sources

arXiv2025

Nonreciprocal Transport with Quantum Geometric Origin in Layered Hybrid Perovskite

Quantum geometry quantifies how the electron wavefunction evolves distinctly from conventional transport theory. In noncentrosymmetric materials, nonreciprocal transport with quantum geometric origin remains prominent with localized charge independent of vanished group velocity. The discovery of such nonreciprocal and nonlinear responses was realized by recent advances in two-dimensional materials. As a promising candidate, the electronic structure and symmetry of layered hybrid perovskites can be deliberately designed and manipulated by incorporating selected organic ligands. Despite the observation of exotic photogalvanic effects and chiral optical effects, the underlying mechanism how these nonlinear responses are enabled in the multi-quantum well structures remained unclear. Here we demonstrated the quantum geometric origin for interlayer spontaneous photocurrent in (PEA)2PbI4. Contrary to assumptions that charge transport across the 2D planes is limited, we observed a spontaneous photocurrent along this crystalline orientation. Theoretical analysis using a tight-binding model identifies shift current as the microscopic origin. This quantum geometric effect is enabled by ionic displacements from centrosymmetric coordinates and enhanced by multiband transition high-density bands of the layered hybrid crystal. We anticipate that such unique low-dimensional systems with structure can provide fertile ground for discovering novel optoelectronic functionalities.

cond-mat.mtrl-sci↗

arXiv2024

Super-Bandgap Electroluminescence from Cesium Lead Bromide

Halide perovskites is a new class of semiconductors with exceptional optoelectronic properties. Among many advantages offered by halide perovskites, the bandgap energy can be tuned in a much broader range than what was possible in conventional semiconductors. This was commonly achieved in previous research by mixing different species of halides into solid solutions. The tuned bandgap using this method, however, often underwent an energy shift under optical or electrical stimuli due to halide segregation. In this work, we discovered an alternative approach to achieve super-bandgap electroluminescence from CsPbBr3. The peak energy of the light emission can be 0.7 eV higher than the reported bandgap energy. Evidence pointed to the radiative recombination at the perovskite-PEDOT:PSS interface being responsible for the unexpected blueshift of electroluminescence. We speculated that perovskite nanocrystals were formed therein and produced higher-energy photons due to quantum confinement. The results suggested an alternative strategy to manipulate and stabilize the color of electroluminescence and achieve particularly blue emission in perovskite-based LEDs.

physics.app-ph↗

arXiv2024

Measuring Minority Carrier Diffusion Length Using High-Injection Scanning Photocurrent Microscopy

Scanning photocurrent microscopy (SPCM) has been widely used for characterizing charge transport properties, in particular, the minority carrier diffusion length of semiconductors. However, studying lightly doped or intrinsic semiconductors using SPCM remained challenging. Methods used in previous work required low levels of optical injection, which could not be fulfilled easily in semiconductors with lower carrier concentration. In this work, using finite-element simulation, we show that the minority diffusion length can also be quantified under high optical excitation. Not only being applicable both doped and intrinsic semiconductors, the method also lifted the restriction of implementing a Schottky contact in testing devices -- a condition assumed to be necessary in previous studies. The results significantly expanded the versatility of SPCM in studying a broad spectrum of semiconducting materials with unprecedented flexibility in experimental conditions.

cond-mat.mtrl-sci↗

arXiv2024

Chirality-Induced Magnet-Free Spin Generation in a Semiconductor

Electrical generation and transduction of polarized electron spins in semiconductors are of central interest in spintronics and quantum information science. While spin generation in semiconductors has been frequently realized via electrical injection from a ferromagnet, there are significant advantages in nonmagnetic pathways of creating spin polarization. One such pathway exploits the interplay of electron spin with chirality in electronic structures or real space. Here, utilizing chirality-induced spin selectivity (CISS), we demonstrate efficient creation of spin accumulation in n-doped GaAs via electric current injection from a normal metal (Au) electrode through a self-assembled monolayer of chiral molecules ({\alpha}-helix L-polyalanine, AHPA-L). The resulting spin polarization is detected as a Hanle effect in the n-GaAs, which is found to obey a distinct universal scaling with temperature and bias current consistent with chirality-induced spin accumulation. The experiment constitutes a definitive observation of CISS in a fully nonmagnetic device structure and demonstration of its ability to generate spin accumulation in a conventional semiconductor. The results thus place key constraints on the physical mechanism of CISS and present a new scheme for magnet-free semiconductor spintronics.

cond-mat.mes-hall↗

arXiv2022

Intrinsic ion migration dynamics in a one-dimensional organic metal halide hybrid

Metal halide perovskites possess many physical properties amenable to optoelectronic applications, whereas the realization of these potentials has been hampered by their environmental and electronic instabilities. The morphological and molecular low dimensional perovskites and perovskite related materials have shown much promise in enhancing the chemical stability due to their unique molecular structures. Here we report on robust and reproducible four-terminal (4T) electrical measurements in a one-dimensional (1D) organic metal halide hybrid, (R)-{\alpha}-methylbenzylammonium lead triiodide ((R-{\alpha}-MBA)PbI3) made possible by its chemical stability. The results reveal a distinct intrinsic ion migration dynamic of single exponential, which underlies the unique 4T I-V characteristics. The dynamic is directly verified by real-time measurements of the transient ionic current. Our observations are consistent with photo-activation and field-assisted ion migration. The elucidated intrinsic ion dynamics may provide the physical basis for understanding and modelling the ubiquitous hysteresis in metal halides based electronic devices and new insights into the dynamics of ion migration in metal halide perovskites and hybrids in general.

physics.app-ph↗