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Haoyu Yang

Publications and source records attributed to Haoyu Yang.

60 records · Page 4Linked to original sources

DAMO: Deep Agile Mask Optimization for Full Chip Scale

Continuous scaling of the VLSI system leaves a great challenge on manufacturing and optical proximity correction (OPC) is widely applied in conventional design flow for manufacturability optimization. Traditional techniques conducted OPC by leveraging a lithography model and suffered from prohibitive computational overhead, and mostly focused on optimizing a single clip without addressing how to tackle the full chip. In this paper, we present DAMO, a high performance and scalable deep learning-enabled OPC system for full chip scale. It is an end-to-end mask optimization paradigm which contains a Deep Lithography Simulator (DLS) for lithography modeling and a Deep Mask Generator (DMG) for mask pattern generation. Moreover, a novel layout splitting algorithm customized for DAMO is proposed to handle the full chip OPC problem. Extensive experiments show that DAMO outperforms the state-of-the-art OPC solutions in both academia and industrial commercial toolkit.

cs.AR↗

Attacking Split Manufacturing from a Deep Learning Perspective

The notion of integrated circuit split manufacturing which delegates the front-end-of-line (FEOL) and back-end-of-line (BEOL) parts to different foundries, is to prevent overproduction, piracy of the intellectual property (IP), or targeted insertion of hardware Trojans by adversaries in the FEOL facility. In this work, we challenge the security promise of split manufacturing by formulating various layout-level placement and routing hints as vector- and image-based features. We construct a sophisticated deep neural network which can infer the missing BEOL connections with high accuracy. Compared with the publicly available network-flow attack [1], for the same set of ISCAS-85 benchmarks, we achieve 1.21X accuracy when splitting on M1 and 1.12X accuracy when splitting on M3 with less than 1% running time.

cs.CR↗

VLSI Mask Optimization: From Shallow To Deep Learning

VLSI mask optimization is one of the most critical stages in manufacturability aware design, which is costly due to the complicated mask optimization and lithography simulation. Recent researches have shown prominent advantages of machine learning techniques dealing with complicated and big data problems, which bring potential of dedicated machine learning solution for DFM problems and facilitate the VLSI design cycle. In this paper, we focus on a heterogeneous OPC framework that assists mask layout optimization. Preliminary results show the efficiency and effectiveness of proposed frameworks that have the potential to be alternatives to existing EDA solutions.

cs.LG↗

Automatic Layout Generation with Applications in Machine Learning Engine Evaluation

Machine learning-based lithography hotspot detection has been deeply studied recently, from varies feature extraction techniques to efficient learning models. It has been observed that such machine learning-based frameworks are providing satisfactory metal layer hotspot prediction results on known public metal layer benchmarks. In this work, we seek to evaluate how these machine learning-based hotspot detectors generalize to complicated patterns. We first introduce a automatic layout generation tool that can synthesize varies layout patterns given a set of design rules. The tool currently supports both metal layer and via layer generation. As a case study, we conduct hotspot detection on the generated via layer layouts with representative machine learning-based hotspot detectors, which shows that continuous study on model robustness and generality is necessary to prototype and integrate the learning engines in DFM flows. The source code of the layout generation tool will be available at https://github. com/phdyang007/layout-generation.

cs.LG↗

Are Adversarial Perturbations a Showstopper for ML-Based CAD? A Case Study on CNN-Based Lithographic Hotspot Detection

There is substantial interest in the use of machine learning (ML) based techniques throughout the electronic computer-aided design (CAD) flow, particularly those based on deep learning. However, while deep learning methods have surpassed state-of-the-art performance in several applications, they have exhibited intrinsic susceptibility to adversarial perturbations --- small but deliberate alterations to the input of a neural network, precipitating incorrect predictions. In this paper, we seek to investigate whether adversarial perturbations pose risks to ML-based CAD tools, and if so, how these risks can be mitigated. To this end, we use a motivating case study of lithographic hotspot detection, for which convolutional neural networks (CNN) have shown great promise. In this context, we show the first adversarial perturbation attacks on state-of-the-art CNN-based hotspot detectors; specifically, we show that small (on average 0.5% modified area), functionality preserving and design-constraint satisfying changes to a layout can nonetheless trick a CNN-based hotspot detector into predicting the modified layout as hotspot free (with up to 99.7% success). We propose an adversarial retraining strategy to improve the robustness of CNN-based hotspot detection and show that this strategy significantly improves robustness (by a factor of ~3) against adversarial attacks without compromising classification accuracy.

cs.LG↗

Bridging the Gap Between Layout Pattern Sampling and Hotspot Detection via Batch Active Learning

Layout hotpot detection is one of the main steps in modern VLSI design. A typical hotspot detection flow is extremely time consuming due to the computationally expensive mask optimization and lithographic simulation. Recent researches try to facilitate the procedure with a reduced flow including feature extraction, training set generation and hotspot detection, where feature extraction methods and hotspot detection engines are deeply studied. However, the performance of hotspot detectors relies highly on the quality of reference layout libraries which are costly to obtain and usually predetermined or randomly sampled in previous works. In this paper, we propose an active learning-based layout pattern sampling and hotspot detection flow, which simultaneously optimizes the machine learning model and the training set that aims to achieve similar or better hotspot detection performance with much smaller number of training instances. Experimental results show that our proposed method can significantly reduce lithography simulation overhead while attaining satisfactory detection accuracy on designs under both DUV and EUV lithography technologies.

cs.LG↗