arXiv subjects

Hari Babu Vasili

Publications and source records attributed to Hari Babu Vasili.

7 recordsLinked to original sources

arXiv2026

Reversible Magneto-ionic Modification of Metallic Magnetic Thin Films

Magnetic multilayers with structural inversion asymmetry, perpendicular magnetic anisotropy (PMA), and large Dzyaloshinskii-Moriya interaction (DMI) are widely studied for magnetic domain wall- and skyrmion-based data processing applications. In this work, we report a controlled, nonvolatile, but reversible local modification of such a system by electrically driven oxygen migration through the metallic film structure by using ionic liquid gating. Our findings provide direct evidence for the modification of the oxidation state at the heavy metal (HM)/ferromagnet (FM) interface. As a result, we observed changes in fundamental magnetic properties, such as an increase in the effective anisotropy constant (Keff) and coercive field (Hc) with oxidation, and a decrease with the reduction of oxygen ions. Positive gate voltages relative to the thin film extract oxygen ions from the magnetic layer, significantly reducing the domain nucleation field. In contrast, negative voltages drive oxygen ions into the magnetic layer, leading to a reversible increase in the extent of domain wall pinning near saturation. We observe a corresponding decrease in the magnetic moment and DMI, with negative voltage reducing both. This magneto-ionic modulation in fully metallic structures is beneficial for spintronic device applications, particularly in field-programmable domain wall and skyrmion devices.

cond-mat.mtrl-sci↗

arXiv2025

Low-energy, ultrafast spin reorientation at competing hybrid interfaces with tunable operating temperature

Information can be stored in magnetic materials by encoding with the direction of the magnetic moment of elements. A figure of merit for these systems is the energy needed to change the information rewrite the storage by changing the magnetic moment. Organic molecules offer a playground to manipulate spin order, with metallo molecular interfaces being a promising direction for sustainable devices. Here, we demonstrate a spin reorientation transition in molecular interfaces of high magnetisation 3d ferromagnetic films due to a competition between a perpendicular magnetic anisotropy (PMA) induced by a heavy metal that dominates at high temperatures, and an in-plane anisotropy generated by molecular coupling at low temperatures. The transition can be tuned around room temperature by varying the ferromagnet thickness (1.4 to 1.9 nm) or the choice of molecular overlayer, with the organic molecules being C60, hydrogen and metal (Cu, Co) phthalocyanines. Near the transition temperature, the magnetisation easy axis can be switched with a small energy input, either electrically with a current density of 10^5 A per cm2, or optically by a fs laser pulse of fluence as low as 0.12 mJ per cm2, suggesting heat assisted technology applications. Magnetic dichroism measurements point toward a phase transition at the organic interface being responsible for the spin reorientation transition.

cond-mat.mes-hall↗

arXiv2023

Spin re-orientation induced anisotropic magnetoresistance switching in LaCo$_{0.5}$Ni$_{0.5}$O$_{3-δ}$ thin films

Realization of novel functionalities by tuning magnetic interactions in rare earth perovskite oxide thin films opens up exciting technological prospects. Strain-induced tuning of magnetic interactions in rare earth cobaltates and nickelates is of central importance due to their versatility in electronic transport properties. Here we reported the spin re-orientation induced switching of anisotropic magnetoresistance (AMR) and its tunability with strain in epitaxial LaCo$_{0.5}$Ni$_{0.5}$O$_{3-δ}$ thin films across the ferromagnetic transition. Moreover, with strain tuning, we could observe a two-fold to four-fold symmetry crossover in AMR across the magnetic transition temperature. The magnetization measurements revealed an onset of ferromagnetic transition around 50 K, and a further reduction in temperature showed a subtle change in the magnetization dynamics, which reduced the ferromagnetic long-range ordering and introduced glassiness in the system. X-ray absorption and X-ray magnetic circular dichroism spectroscopy measurements over Co and Ni L edges revealed the Co spin state transition below the magnetic transition temperature leading to the AMR switching and also the presence of Ni$^{2+}$ and Co$^{4+}$ ions evidencing the charge transfer from Ni to Co ions. Our work demonstrated the tunability of magnetic interactions mediated electronic transport in cobaltate-nickelate thin films, which is relevant in understanding Ni-Co interactions in oxides for their technological applications such as in AMR sensors.

cond-mat.mtrl-sci↗

arXiv2021

Orbital Occupancy and Hybridization in Strained SrVO$_3$ Epitaxial Films

Oxygen packaging in transition metal oxides determines the metal-oxygen hybridization and electronic occupation at metal orbitals. Strontium vanadate (SrVO$_3$), having a single electron in a $3d$ orbital, is thought to be the simplest example of strongly correlated metallic oxides. Here, we determine the effects of epitaxial strain on the electronic properties of SrVO$_3$ thin films, where the metal-oxide sublattice is corner-connected. Using x-ray absorption and x-ray linear dichroism at the V $L_{2,3}$ and O $K$-edges, it is observed that tensile or compressive epitaxial strain change the hierarchy of orbitals within the $t_{2g}$ and $e_g$ manifolds. Data show a remarkable $2p-3d$ hybridization, as well as a strain-induced reordering of the V $3d$($t_{2g}$, $e_g$) orbitals. The latter is itself accompanied by a consequent change of hybridization that modulates the hybrid $π^*$ and $σ^*$ orbitals and the carrier population at the metal ions, challenging a rigid band picture.

cond-mat.str-el↗

arXiv2020

Ubiquitous impact of localised impurity states on the exchange coupling mechanism in magnetic topological insulators

Since the discovery of the quantum anomalous Hall effect in the magnetically doped topological insulators (MTI) Cr:(Bi,Sb)$_2$Te$_3$ and V:(Bi,Sb)$_2$Te$_3$, the search for the exchange coupling mechanisms underlying the onset of ferromagnetism has been a central issue, and a variety of different scenarios have been put forward. By combining resonant photoemission, X-ray magnetic dichroism and multiplet ligand field theory, we determine the local electronic and magnetic configurations of V and Cr impurities in (Bi,Sb)$_2$Te$_3$. While strong pd hybridisation is found for both dopant types, their 3d densities of states show pronounced differences. State-of-the-art first-principles calculations show how these impurity states mediate characteristic short-range pd exchange interactions, whose strength sensitively varies with the position of the 3d states relative to the Fermi level. Measurements on films with varying host stoichiometry support this trend. Our results establish the essential role of impurity-state mediated exchange interactions in the magnetism of MTI.

cond-mat.str-el↗

arXiv2019

Topological electronic structure and intrinsic magnetization in MnBi$_4$Te$_7$: a Bi$_2$Te$_3$-derivative with a periodic Mn sublattice

Combinations of non-trivial band topology and long-range magnetic order hold promise for realizations of novel spintronic phenomena, such as the quantum anomalous Hall effect and the topological magnetoelectric effect. Following theoretical advances material candidates are emerging. Yet, a compound with a band-inverted electronic structure and an intrinsic net magnetization remains unrealized. MnBi$_2$Te$_4$ is a candidate for the first antiferromagnetic topological insulator and the progenitor of a modular (Bi$_2$Te$_3$)$_n$(MnBi$_2$Te$_4$) series. For $n$ = 1, we confirm a non-stoichiometric composition proximate to MnBi$_4$Te$_7$ and establish an antiferromagnetic state below 13 K followed by a state with net magnetization and ferromagnetic-like hysteresis below 5 K. Angle-resolved photoemission experiments and density-functional calculations reveal a topological surface state on the MnBi$_4$Te$_7$(0001) surface, analogous to the non-magnetic parent compound Bi$_2$Te$_3$. Our results render MnBi$_4$Te$_7$ as a band-inverted material with an intrinsic net magnetization and a complex magnetic phase diagram providing a versatile platform for the realization of different topological phases.

cond-mat.mtrl-sci↗

arXiv2018

Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction

Pure spin currents hold promises for an energy-friendlier spintronics. They can be generated by a flow of charge along a non-magnetic metal having a large spin-orbit coupling. It produces a spin accumulation at its surfaces, controllable by the magnetization of an adjacent ferromagnetic layer. Paramagnetic metals typically used are close to a ferromagnetic instability and thus magnetic proximity effects can contribute to the observed angular-dependent magnetoresistance (ADMR). As interface phenomena govern the spin conductance across the metal/ferromagnetic-insulator heterostructures, unraveling these distinct contributions is pivotal to full understanding of spin current conductance. We report here x-ray absorption and magnetic circular dichroism (XMCD) at Pt-M and (Co,Fe)-L absorption edges and atomically-resolved energy loss electron spectroscopy (EELS) data of Pt/CoFe2O4 bilayers where CoFe2O4 layers have been capped by Pt grown at different temperatures. It turns out that the ADMR differs dramatically, being either dominated by spin Hall magnetoresistance (SMR) associated to spin Hall effect or anisotropic magnetoresistance (AMR). The XMCD and EELS data indicate that the Pt layer grown at room temperature does not display any magnetic moment, whereas when grown at higher temperature it is magnetic due to interfacial Pt-(Co,Fe) alloying. These results allow disentangling spin accumulation from interfacial chemical reconstructions and for tailoring the angular dependent magnetoresistance.

cond-mat.mtrl-sci↗