arXiv subjects

Hark Hoe Tan

Publications and source records attributed to Hark Hoe Tan.

31 records · Page 2Linked to original sources

arXiv2023

Pushing limits of photovoltaics and photodetection using radial junction nanowire devices

Nanowire devices have long been proposed as an efficient alternative to their planar counterparts for different optoelectronic applications. Unfortunately, challenges related to the growth and characterization of doping and p-n junction formation in nanowire devices (along axial or radial axis) have significantly impeded their development. The problems are further amplified if a p-n junction has to be implemented radially. Therefore, even though radial junction devices are expected to be on par with their axial junction counterparts, there are minimal reports on high-performance radial junction nanowire optoelectronic devices. This paper summarizes our recent results on the simulation and fabrication of radial junction nanowire solar cells and photodetectors, which have shown unprecedented performance and clearly demonstrate the importance of radial junction for optoelectronic applications. Our simulation results show that the proposed radial junction device is both optically and electrically optimal for solar cell and photodetector applications, especially if the absorber quality is extremely low. The radial junction nanowire solar cells could achieve a 17.2% efficiency, whereas the unbiased radial junction photodetector could show sensitivity down to a single photon level using an absorber with a lifetime of less than 50 ps. In comparison, the axial junction planar device made using same substrate as absorber showed less than 1% solar cell efficiency and almost no photodetection at 0 V. This study is conclusive experimental proof of the superiority of radial junction nanowire devices over their thin film or axial junction counterparts, especially when absorber lifetime is extremely low. The proposed device holds huge promise for III-V based photovoltaics and photodetectors.

cond-mat.mtrl-sci↗

arXiv2022

Nanoscale 3D tomography by in-flight fluorescence spectroscopy of atoms sputtered by a focused ion beam

Nanoscale fabrication and characterisation techniques critically underpin a vast range of fields, including materials science, nanoelectronics and nanobiotechnology. Focused ion beam (FIB) techniques are particularly appealing due to their high spatial resolution and widespread use for processing of nanostructured materials and devices. Here, we introduce FIB-induced fluorescence spectroscopy (FIB-FS) as a nanoscale technique for spectroscopic detection of atoms sputtered by an ion beam. We use semiconductor heterostructures to demonstrate nanoscale lateral and depth resolution and show that it is limited by ion-induced intermixing of nanostructured materials. Sensitivity is demonstrated qualitatively by depth-profiling of 3.5, 5 and 8 nm quantum wells, and quantitatively by detection of trace-level impurities present at parts-per-million levels. To showcase the utility of the FIB-FS technique, we use it to characterise quantum wells and Li-ion batteries. Our work introduces FIB-FS as a high-resolution, high sensitivity, 3D analysis and tomography technique that combines the versatility of FIB nanofabrication techniques with the power of diffraction-unlimited fluorescence spectroscopy. It is applicable to all elements in the periodic table, and enables real-time analysis during direct-write nanofabrication by focused ion beams.

physics.app-ph↗

arXiv2021

Self-powered InP Nanowire Photodetector for Single Photon Level Detection at Room Temperature

Highly sensitive photodetectors with single photon level detection is one of the key components to a range of emerging technologies, in particular the ever-growing field of optical communication, remote sensing, and quantum computing. Currently, most of the single-photon detection technologies require external biasing at high voltages and/or cooling to low temperatures, posing great limitations for wider applications. Here, we demonstrate InP nanowire array photodetectors that can achieve single-photon level light detection at room temperature without an external bias. We use top-down etched, heavily doped p-type InP nanowires and n-type AZO/ZnO carrier selective contact to form a radial p-n junction with a built-in electric field exceeding 3x10^5 V/cm at 0 V. The device exhibits broadband light sensitivity and can distinguish a single photon per pulse from the dark noise at 0 V, enabled by its design to realize near-ideal broadband absorption, extremely low dark current, and highly efficient charge carrier separation. Meanwhile, the bandwidth of the device reaches above 600 MHz with a timing jitter of 538 ps. The proposed device design provides a new pathway towards low-cost, high-sensitivity, self-powered photodetectors for numerous future applications.

physics.optics↗

arXiv2021

Ultralow Threshold, Single-Mode InGaAs/GaAs Multi-Quantum Disk Nanowire Lasers

We present single-mode nanowire (NW) lasers with ultralow threshold in the near-infrared spectral range. To ensure the single-mode operation, the NW diameter and length are reduced specifically to minimize the longitudinal and transverse modes of the NW cavity. Increased optical losses and reduced gain volume by the dimension reduction are compensated by excellent NW morphology and InGaAs/GaAs multi-quantum disks. At 5 K, a threshold low as 1.6 μJ/cm2 per pulse is achieved with a resulting quality factor exceeding 6400. By further passivating the NW with an AlGaAs shell to suppress surface non-radiative recombination, single-mode lasing operation is obtained with a threshold of only 48 μJ/cm2 per pulse at room temperature with a high characteristic temperature of 223 K and power output of ~ 0.9 μW. These single-mode, ultralow threshold, high power output NW lasers are promising for the development of near-infrared nanoscale coherent light sources for integrated photonic circuits, sensing, and spectroscopy.

physics.optics↗

arXiv2021

Axial vs. Radial Junction Nanowire Solar Cell

Both axial and radial junction nanowire solar cells have their challenges and advantages. However, so far, there is no review that explicitly provides a detailed comparative analysis of both axial and radial junction solar cells. This article reviews some of the recent results on axial and radial junction nanowire solar cells with an attempt to perform a comparative study between the optical and device behavior of these cells. In particular, we start by reviewing different results on how the absorption can be tuned in axial and radial junction solar cells. We also discuss results on some of the critical device concepts that are required to achieve high efficiency in axial and radial junction solar cells. We include a section on new device concepts that can be realized in nanowire structures. Finally, we conclude this review by discussing a few of the standing challenges of nanowire solar cells.

cond-mat.mes-hall↗

arXiv2021

Infrared up-conversion imaging in nonlinear metasurfaces

Infrared imaging is a crucial technique in a multitude of applications, including night vision, autonomous vehicles navigation, optical tomography, and food quality control. Conventional infrared imaging technologies, however, require the use of materials like narrow-band gap semiconductors which are sensitive to thermal noise and often require cryogenic cooling. Here, we demonstrate a compact all-optical alternative to perform infrared imaging in a metasurface composed of GaAs semiconductor nanoantennas, using a nonlinear wave-mixing process. We experimentally show the up-conversion of short-wave infrared wavelengths via the coherent parametric process of sum-frequency generation. In this process, an infrared image of a target is mixed inside the metasurface with a strong pump beam, translating the image from infrared to the visible in a nanoscale ultra-thin imaging device. Our results open up new opportunities for the development of compact infrared imaging devices with applications in infrared vision and life sciences.

physics.optics↗

arXiv2020

Identifying Carbon as the Source of Visible Single Photon Emission from Hexagonal Boron Nitride

Single photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered significant attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN and by comparing various synthesis methods, we provide direct evidence that the visible SPEs are carbon related. Room temperature optically detected magnetic resonance (ODMR) is demonstrated on ensembles of these defects. We also perform ion implantation experiments and confirm that only carbon implantation creates SPEs in the visible spectral range. Computational analysis of hundreds of potential carbon-based defect transitions suggest that the emission results from the negatively charged VBCN- defect, which experiences long-range out-of-plane deformations and is environmentally sensitive. Our results resolve a long-standing debate about the origin of single emitters at the visible range in hBN and will be key to deterministic engineering of these defects for quantum photonic devices.

physics.app-ph↗

arXiv2020

Exploring the Band Structure of Wurtzite InAs Nanowires Using Photocurrent Spectroscopy

We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of hexagonal Wurtzite InAs. Signatures of optical transitions between four valence bands and two conduction bands are observed which are consistent with the symmetries expected from group theory. The ground state transition energy identified from photocurrent spectra is seen to be consistent with photoluminescence emitted from a cluster of nanowires from the same growth substrate. From the energies of the observed bands we determine the spin orbit and crystal field energies in Wurtzite InAs. This information is essential to the development of crystal phase engineering of this important III-V semiconductor.

cond-mat.mes-hall↗

arXiv2020

Characterisation, Selection and Micro-Assembly of Nanowire Laser Systems

Semiconductor nanowire (NW) lasers are a promising technology for the realisation of coherent optical sources with extremely small footprint. To fully realize their potential as building blocks in on-chip photonic systems, scalable methods are required for dealing with large populations of inhomogeneous devices that are typically randomly distributed on host substrates. In this work two complementary, high-throughput techniques are combined: the characterisation of nanowire laser populations using automated optical microscopy, and a high accuracy transfer printing process with automatic device spatial registration and transfer. In this work a population of NW lasers is characterised, binned by threshold energy density and subsequently printed in arrays onto a secondary substrate. Statistical analysis of the transferred and control devices show that the transfer process does not incur measurable laser damage and the threshold binning can be maintained. Analysis is provided on the threshold and mode spectra of the device populations to investigate the potential for using NW lasers for integrated systems fabrication.

physics.app-ph↗

arXiv2017

Dynamics and control of gold-encapped gallium arsenide nanowires imaged by 4D electron microscopy

Eutectic related reaction is a special chemical/physical reaction involving multiple phases, solid and liquid. Visualization of phase reaction of composite nanomaterials with high spatial and temporal resolution provides a key understanding of alloy growth with important industrial applications. However, it has been a rather challenging task. Here we report the direct imaging and control of the phase reaction dynamics of a single, as-grown free-standing gallium arsenide nanowire encapped with a gold nanoparticle, free from environmental confinement or disturbance, using four-dimensional electron microscopy. The non-destructive preparation of as-grown free-standing nanowires without supporting films allows us to study their anisotropic properties in their native environment with better statistical character. A laser heating pulse initiates the eutectic related reaction at a temperature much lower than the melting points of the composite materials, followed by a precisely time-delayed electron pulse to visualize the irreversible transient states of nucleation, growth and solidification of the complex. Combined with theoretical modeling, useful thermodynamic parameters of the newly formed alloy phases and their crystal structures could be determined. This technique of dynamical control and 4D imaging of phase reaction processes on the nanometer-ultrafast time scale open new venues for engineering various reactions in a wide variety of other systems.

cond-mat.mtrl-sci↗

arXiv2015

Anomalous dynamic behaviour of optically trapped high aspect ratio nanowires

We investigate the dynamics of high aspect ratio nanowires trapped axially in a single gradient force optical tweezers. A power spectrum analysis of the Brownian dynamics reveals a broad spectral resonance of the order of a kHz with peak properties that are strongly dependent on the input trapping power. Modelling of the dynamical equations of motion of the trapped nanowire that incorporate non-conservative effects through asymmetric coupling between translational and rotational degrees of freedom provides excellent agreement with the experimental observations. An associated observation of persistent cyclical motion around the equilibrium trapping position using winding analysis provides further evidence for the influence of non-conservative forces.

physics.optics↗

arXiv2014

Carrier thermalization dynamics in single Zincblende and Wurtzite InP nanowires

Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band to band transition theory is developed to extract the electron-hole-plasma density and temperature as a function of time from TRS measurements of single nanowires which have complex valence band structures. We find that the thermalization dynamics of hot carriers depends strongly on material (GaAs NW vs. InP NW) and less strongly on crystal structure (ZB vs. WZ). The thermalization dynamics of ZB and WZ InP NWs are similar. But a comparison of the thermalization dynamics in ZB and WZ InP NWs with ZB GaAs NW reveals more than an order of magnitude slower relaxation for the InP NWs. We interpret these results as reflecting their distinctive phonon band structures which lead to different hot phonon effects. Knowledge of hot carrier thermalization dynamics is an essential component for effective incorporation of nanowire materials into electronic devices.

cond-mat.mes-hall↗

arXiv2008

Extraordinary transmission of nanohole lattices in gold films

We study experimentally the transmission of light through a square lattice of nanoholes perforated in a optically-thick gold film. We observe that the periodicity of the structure enhances the light transmission for specific wavelengths, and we analyze this effect theoretically by employing finite-difference time-domain numerical simulations. Furthermore, we investigate the possibilities for manipulation of the spectral transmission in quasi-periodic and chirped lattices consisting of square nanoholes with varying hole size or lattice periodicity.

physics.optics↗