arXiv subjects

Harshan Reddy Gopidi

Publications and source records attributed to Harshan Reddy Gopidi.

10 recordsLinked to original sources

arXiv2026

Revealing low-energy surfaces of multinary compounds by controlling surface coordination environments

When modeling surfaces of multinary compounds, conventional cleavage planes often cut through strongly bonded polyhedra, resulting in unphysical surface energies. Here, we introduce SALAMI (Symmetric Atomic Layers for Arbitrary Multinary Interfaces), a Python package that generates symmetric, charge-neutral, dipole-free, and low-energy slab models for multinary compounds. SALAMI performs combinatorial searches to selectively remove surface atoms and generate corrugated terminations that preserve optimal coordination environments. We applied this workflow to all symmetrically inequivalent crystallographic orientations with Miller indices up to 2 for two prototypical structures: the solid-state electrolyte Li3PS4 and the transparent conducting oxide ZnSb2O6. Density functional theory calculations reveal that Li3PS4 must preserve all PS4 units to achieve the minimum surface energy. For ZnSb2O6, low-energy surfaces are achieved by partial undercoordination of surface Sb atoms to SbO5 or SbO4 from the bulk SbO6, depending on the surface orientations. Compared to surface models generated with unconstrained coordination, applying constraints to achieve optimal local coordination environments significantly lowers surface energies, shrinking the volume of the predicted Wulff shape by approximately 20%. Our results demonstrate that meticulous control of local coordination environments is necessary for accurately predicting the surface energetics of multinary compounds.

cond-mat.mtrl-sci↗

arXiv2026

Reducing Self-Interaction Error in Transition-Metal Oxides with Different Exact-Exchange Fractions for Energy and Density

Density functional theory (DFT) in chemistry and materials science aims for "chemical accuracy," but this goal is challenged by the need to approximate the exact exchange-correlation (XC) energy functional. The r$^2$SCAN, meta-generalized gradient approximation to the XC functional fulfills 17 exact constraints of the XC energy, and has significantly boosted prediction accuracy for molecules and materials. However, r$^2$SCAN remains inadequate at predicting properties of open \textit{d} and \textit{f} transition-metal strongly correlated compounds, such as band gaps, magnetic moments, and oxidation energies. Prediction inaccuracies of r$^2$SCAN energies arise from functional and density-driven errors, mainly resulting from the DFT self-interaction error. We propose the r$^2$SCANY@r$^2$SCANX method to mitigate the self-interaction error of XC functionals for the accurate simulations of electronic, magnetic, and thermochemical properties of transition metal oxides. r$^2$SCANY@r$^2$SCANX uses different fractions of exact Hartree-Fock exchange: X for the electronic density and Y for the density functional approximation of the total energy, thereby simultaneously addressing functional-driven and density-driven inaccuracies. Building just on 1 (or maximum 2) parameters that apply unchanged to \emph{s-p}-bonded systems, we demonstrate that, r$^2$SCANY@r$^2$SCANX improves upon the r$^2$SCAN predictions for 20 highly correlated oxides and even outperforms the highly parameterized DFT(r$^2$SCAN)+\emph{U} method -- the state-of-the-art approach to predict strongly correlated materials. Prediction uncertainties for oxidation energies and magnetic moments of transition metal oxides are significantly reduced by r$^2$SCAN10@r$^2$SCAN50 and band gaps with r$^2$SCAN10@r$^2$SCAN. r$^2$SCAN10@r$^2$SCAN50 diminishes the density-driven error of the energy in r$^2$SCAN and r$^2$SCAN10.

cond-mat.mtrl-sci↗

arXiv2025

Search for Active and Inactive Ion Insertion Sites in Organic Crystalline Materials

The position of mobile active and inactive ions, specifically ion insertion sites, within organic crystals, significantly affects the properties of organic materials used for energy storage and ionic transport. Identifying the positions of these atom (and ion) sites in an organic crystal is difficult, especially when the element has a low X-ray scattering power, such as lithium (Li) and hydrogen, which are difficult to detect with powder X-ray diffraction (XRD) methods. First-principles calculations, exemplified by density functional theory (DFT), are very effective for confirming the relative stability of ion positions in materials. However, the lack of effective strategies to identify ion sites in these organic crystalline frameworks renders this task extremely challenging. This work presents two algorithms: (i) Efficient Location of Ion Insertion Sites from Extrema in electrostatic local potential and charge density (ELIISE), and (ii) ElectRostatic InsertioN (ERIN), which leverage charge density and electrostatic potential fields accessed from first-principles calculations, combined with the Simultaneous Ion Insertion and Evaluation (SIIE) workflow -- that inserts all ions simultaneously -- to determine ion positions in organic crystals. We demonstrate that these methods accurately reproduce known ion positions in 16 organic materials and also identify previously overlooked low-energy sites in tetralithium 2,6-naphthalenedicarboxylate (Li$_4$NDC), an organic electrode material, highlighting the importance of inserting all ions simultaneously as done in the SIIE workflow.

cond-mat.mtrl-sci↗

arXiv2023

Unveiling Defect Physics in Gapped Metals: A Theoretical Investigation into Defect Formation and Electronic Structure Interplay

In materials science, point defects play a crucial role in materials properties. This is particularly well known for the wide band gap insulators where the defect formation/compensation determines the equilibrium Fermi level and generally the doping response of a given material. Similarly, the main defect trends are also widely understood for regular metals (e.g., Cu and Zn discussed herein). With the development of electronic structure theory, a unique class of quantum materials - gapped metals (e.g., Ca6Al7O16, SrNbO3, In15SnO24, and CaN2) that exhibit characteristics of both metals and insulators - has been identified. While these materials have internal band gaps similar to insulators, their Fermi level is within one of the main band edges, giving a large intrinsic free carrier concentration. Such unique electronic structures give rise to unique defect physics, where the formation of acceptor or donor defect directly affects not only the electronic structure but also can substantially shift the Fermi level. Motivated by this, herein, we develop a fundamental first-principles theory of defect formation in gapped metal with a primary focus on accurate calculations of defect formation energy. We demonstrate that due to electron-hole recombination, the formation of acceptor defects in n-type gapped metals results in significant dependence of defect formation energy on supercell size, which we explain by the change of band filling and its effect on the defect formation energetics. To accurately describe defect formation energy, we revisit the phenomenology of band-filling corrections and demonstrate the effect of this correction, accurate potential alignment, and other factors that can affect defect energetics. Thus, this work not only sheds light on the intrinsic properties of gapped metals but, in general, establishes a theoretical foundation for analyzing defects in gapped metals.

cond-mat.mtrl-sci↗

arXiv2023

Temperature-induced suppression of structural disproportionation in paramagnetic quantum materials

With the development of electronic structure theory, a new class of materials - quantum ones has been recognized by the community. Traditionally, it has been believed that the properties of such compounds cannot be described within the framework of modern density functional theory, and indeed, more advanced post-mean-field theory methods are needed. Motivated by this, herein, we develop a fundamental understanding of such complex materials using the example of paramagnetic YNiO3, which is experimentally known to exhibit metal-to-insulator phase transition. We show that this material has a temperature-dependent distribution of local structural and spin motifs. Thus, while at low temperatures, YNiO3 has distinct structural disproportionation with the formation of large and small octahedra, as the temperature increases, this disproportionation is suppressed. We also explain the paramagnetic monoclinic to paramagnetic orthorhombic phase transition within the double-well to single-well energy profile, predicting the variation of the corresponding energy profile as a function of octahedral size distribution. In this way, we demonstrate a fundamental understanding of structural phase transitions in quantum materials, giving insight into how it can be used for different applications and what minimum level of theory is needed to describe such types of complex materials correctly.

cond-mat.mtrl-sci↗

arXiv2023

Physics of band-filling correction in defect calculations of solid-state materials

In solid-state physics/chemistry, a precise understanding of defect formation and its impact on the electronic properties of wide-bandgap insulators is a cornerstone of modern semiconductor technology. However, complexities arise in the electronic structure theory of defect formation when the latter triggers partial occupation of the conduction/valence band, necessitating accurate post-process correction to the energy calculations. Herein, we dissect these complexities, focusing specifically on the post-process band-filling corrections, a crucial element that often demands thorough treatment in defect formation studies. We recognize the importance of these corrections in maintaining the accuracy of electronic properties predictions in wide-bandgap insulators and their role in reinforcing the importance of a reliable common reference state for defect formation energy calculations. We explored solutions such as aligning deep states and electrostatic potentials, both of which have been used in previous works, showing the effect of band alignment on defect formation energy. Our findings demonstrate that the impact of defect formation on electronic structure (even deep states) can be significantly dependent on the supercell size. We also show that within band-filling calculations, one needs to account for the possible change of electronic structure induced by defect formation, which requires sufficient convergence of electronic structure with supercell size. Thus, this work emphasizes the critical steps to predict defect formation energy better and paves the way for future research to overcome these challenges and advance the field with more efficient and reliable predictive models.

cond-mat.mtrl-sci↗

arXiv2023

Noble gas functional defect with unusual relaxation pattern in solids

The conventional understanding has always been that noble gases are chemically inert and do not affect materials properties. This belief has led to their use as a standard reference in various experimental applications through noble gas implantation. However, in our research, using first-principles calculations, we delve into the effects of noble gas defects on the properties of several functional oxides, thereby questioning this long-held assumption. We provide evidence that noble gases can indeed serve as functional defects. They have the potential to decentralize the localized defect states and prompt a shift of electrons from a localized state to the main conduction band. Our investigation unveils that noble gas defects can indeed significantly alter material properties. Thus, we underscore the importance of factoring in such defects when assessing material properties.

cond-mat.mtrl-sci↗

arXiv2023

Optical Properties and Electronic Structures of Intrinsic Gapped Metals: Inverse Materials Design Principles for Transparent Conductors

Traditional solid-state physics has long correlated the optical properties of materials with their electronic structures. However, recent discoveries of intrinsic gapped metals have challenged this classical view. Gapped metals possess electronic properties distinct from both metals and insulators, with a large concentration of free carriers without any intentional doping and an internal band gap. This unique electronic structure makes gapped metals potentially superior to materials designed by intentional doping of the wide band gap insulators. Despite their promising applications, such as transparent conductors, designing gapped metals for specific purposes remains challenging due to the lack of understanding of the correlation between their electronic band structures and optical properties. This study focuses on representative examples of gapped metals and demonstrates the cases of (i) gapped metals (e.g., CaN2) with strong intraband absorption in the visible range, (ii) gapped metals (e.g., SrNbO3) with strong interband absorption in the visible range, (iii) gapped metals (e.g., Sr5Nb5O17) that are potential transparent conductors. We explore the complexity of identifying potential gapped metals for transparent conductors and propose inverse materials design principles for discovering new-generation transparent conductors.

cond-mat.mtrl-sci↗

arXiv2023

Spontaneous off-stoichiometry as the knob to control dielectric properties of gapped metals

Using the first-principles calculations and La3Te4 as an example of an n-type gapped metal, we demonstrate that gapped metals can develop spontaneous defect formation resulting in off-stoichiometric compounds. Importantly, these compounds have different free carrier concentrations and can be realized by optimizing synthesis conditions. The ability to manipulate the free carrier concentration allows to tailor intraband and interband transitions, thus controlling the optoelectronic properties of materials in general. Specifically, by realizing different off-stochiometric La3-xTe4 compounds, it is possible to reach specific crossings of the real part of the dielectric function with the zero line, reduce plasma frequency contribution to absorption spectra, or, more generally, induce metal-to-insulator transition. This is particularly important in the context of optoelectronic, plasmonic, and epsilon-near-zero materials, as it enables materials design with a target functionality. While this work is limited to the specific gapped metal, we demonstrate that the fundamental physics is transferable to other gapped metals and can be generally used to design a wide class of new optoelectronic/plasmonic materials.

cond-mat.mtrl-sci↗

arXiv2022

Fermi Level Instability as a Way to Tailor Properties of La3Te4

Traditionally, the formation of off-stoichiometric compounds is believed to be the growth effect rather than the intrinsic tendency of the system. However, here, using the example of La3Te4, we demonstrate that in n-type gapped metals having a large internal gap between principal band edges and the Fermi level inside of the principal conduction band, Fermi-level instability can develop, resulting in a reduction of formation energy for acceptor defects. Specifically, La vacancies in La3Te4 form spontaneously to produce the acceptor states and remove a fraction of free carriers from the principal conduction band via electron-hole recombination. Such a unique self-doping mechanism allows to stabilize a range of off-stoichiometric La3-xTe4 compounds, which have different electronic properties. Moreover, we thus show how controlling synthesis conditions can be used as a knob to reach the target functionality, including controllable metal-to-insulator transition.

cond-mat.mtrl-sci↗