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Harshit Agarwal

Publications and source records attributed to Harshit Agarwal.

11 recordsLinked to original sources

A delay-programmable two-color femtosecond source for multiphoton ionization studies based on chirped-seed NOPA

We demonstrate a delay-programmable two-color femtosecond source based on a chirped-seed noncollinear optical parametric amplifier. Introducing controlled dispersion into the seed enables spectral selection through pump-seed delay, allowing flexible generation of two independently tunable pulse components with adjustable relative timing at high repetition rate. The temporal and spectral properties are characterized using nonlinear optical cross-correlation and dispersion-scan measurements. As a benchmark application, the source is employed in a COLTRIMS-based multiphoton ionization experiment on trapped Li atoms, revealing delay-dependent ionization pathways and demonstrating its suitability for bichromatic ultrafast spectroscopy.

physics.atom-ph

AC magnetic measurements with a self-oscillating LC circuit and its application to university education

Understanding the magnetic properties of matter plays a key role in materials physics. However, university education on fundamental magnetism is limited to a theoretical survey because of the lack of appropriate apparatus that can be applied for laboratory courses at the undergraduate level. In this work, we introduce an AC magnetometer based on the Colpitts self-oscillator with an inductor coil as a probe. We show that this type of self-oscillator can be adopted in a typical university laboratory course to learn the principles of magnetic measurement and to understand the fundamental magnetism of matter. We demonstrate the exceptional stability of the circuit with a working frequency range of ~10 kHz to 10 MHz and excellent performance to detect the diamagnetic signal from a superconductor at cryogenic temperature.

physics.ed-ph

Broken inversion symmetry in the charge density wave phase in EuAl$_4$

EuAl$_4$ exhibits a complex phase diagram, including the development of a charge density wave (CDW) below $T_{CDW} = 145$ K. Below $T_{N}=15.4$ K, a series of antiferromagnetically (AFM) ordered phases appear, while non-trivial topological phases, like skyrmion lattices, are stabilized under an applied magnetic field. The symmetries of the variously ordered phases are a major issue concerning the understanding of the stabilization of the ordered phases as well as concerning the interplay between the various types of order. EuAl$_4$ at room temperature has tetragonal symmetry with space group $I4/mmm$. The CDW phase has an incommensurately modulated crystal structure described by the modulation wave vector $\mathbf{q} \approx 0.17\mathbf{c}^{*}$. On the basis of various experiments, including elastic and inelastic x-ray scattering, and second-harmonic generation, it has been proposed that the symmetry of the CDW phase of EuAl$_4$ could be centrosymmetric orthorhombic, non-centrosymmetric orthorhombic or non-centrosymmetric tetragonal. Here, we report temperature-dependent, single-crystal x-ray diffraction experiments that show that the CDW is a transverse CDW with phason disorder, and with non-centrosymmetric symmetry according to the orthorhombic superspace group $F222(0\,0\,\sigma)00s$.Essential for this finding is the availability of a sufficient number of second-order ($2\mathbf{q}$) satellite reflections in the x-ray diffraction data set. The broken inversion symmetry implies that skyrmions might form due to Dzyaloshinskii-Moriya (DM) interactions, instead of a more exotic mechanism as it is required for centrosymmetric structures.

cond-mat.str-el

I-centered vs F-centered orthorhombic symmetry and negative thermal expansion of the charge density wave of EuAl2Ga2

Together with EuGa4 and EuAl4, EuAl2Ga2 belongs to the BaAl4 structure type with space group symmetry I4/mmm. EuAl2Ga2 develops an incommensurate charge density wave (CDW) at temperatures below TCDW = 51 K. On the basis of temperature dependent single-crystal X-ray diffraction (SXRD) data, the incommensurately modulated CDW crystal structure of EuAl2Ga2 is determined to possess orthorhombic superspace symmetry Immm(00g)s00. This symmetry is different from the orthorhombic Fmmm based symmetry of the CDW state of EuAl4. Nevertheless, both symmetries Immm(00g)s00 and Fmmm(00g)s00 lead to the same conclusion, that the CDW is supported by the layers of Al1 type atoms, while the Eu and Al2 or Ga atoms are not directly involved in CDW formation. The different symmetries of the CDW states of EuAl4 and EuAl2Ga2, as well as the observation of negative thermal expansion in the CDW state of EuAl2Ga2 might be explained by the effects of Ga substitution in the latter compound.

cond-mat.str-el

Annealing-induced long-range charge density wave order in magnetic kagome FeGe: fluctuations and disordered structure

Charge density wave (CDW) in kagome materials with the geometric frustration is able to carry unconventional characteristics. Recently, a CDW has been observed below the antiferromagnetic order in kagome FeGe, in which magnetism and CDW are intertwined to form an emergent quantum ground state. However, the CDW is only short-ranged and the structural modulation originating from it has yet to be determined experimentally. Here we realize a long-range CDW order by post-annealing process, and resolve the structure model through single crystal x-ray diffraction. Occupational disorder of Ge resulting from short-range CDW correlations above $T_\mathrm{CDW}$ is identified from structure refinements. The partial dimerization of Ge along the $c$ axis is unveiled to be the dominant distortion for the CDW. Occupational disorder of Ge is also proved to exist in the CDW phase due to the random selection of partially dimerized Ge sites. Our work provides useful insights for understanding the unconventional nature of the CDW in FeGe.

cond-mat.str-el

Room temperature charge density wave in a tetragonal polymorph of Gd2Os3Si5 and study of its origin in the RE2T3X5 (RE = Rare earth, T = transition metal, X = Si, Ge) series

Charge density wave (CDW) systems are proposed to exhibit application potential for electronic and optoelectronic devices. Therefore, identifying new materials that exhibit a CDW state at room temperature is crucial for the development of CDW-based devices. Here, we present a non-layered tetragonal polymorph of Gd2Os3Si5, which exhibits a CDW state at room temperature. Gd2Os3Si5 crystallizes in the U2Mn3Si5-type tetragonal crystal structure with the space group P4/mnc. Single-crystal x-ray diffraction (SXRD) analysis shows that Gd2Os3Si5 possesses an incommensurately modulated structure with modulation wave vector q = (0.53, 0, 0), while the modulation reduces the symmetry to orthorhombic Cccm(σ00)0s0. This differs in contrast to isostructural Sm2Ru3Ge5, where the modulated phase has been reported to possess the superspace symmetry Pm(α 0 γ)0. However, reinvestigation of Sm2Ru3Ge5 suggests that its modulated crystal structure can alternatively be described by Cccm(σ00)0s0, with modulations similar to Gd2Os3Si5. The magnetic susceptibility, \c{hi}(T), exhibits a maximum at low temperatures that indicates an antiferromagnetic transition at TN = 5.5 K. The \c{hi}(T) furthermore shows an anomaly at around 345 K, suggesting a CDW transition at TCDW = 345 K, that corroborates the result from high-temperature SXRD measurements. Interestingly, R2T3X5 compounds are known to crystallize either in the tetragonal Sc2Fe3Si5 type structure or in the orthorhombic U2Co3Si5 structure type. Not all of the compounds in the R2T3X5 series undergo CDW phase transitions. We find that R2T3X5 compounds will exhibit a CDW transition, if the condition : 0.526 < c/sqrt(ab) < 0.543 is satisfied. We suggest the wave vector-dependent electron-phonon coupling to be the dominant mechanism of CDW formation in the tetragonal polymorph of Gd2Os3Si5.

cond-mat.str-el

Charge density wave with suppressed long-range structural modulation in canted antiferromagnetic kagome FeGe

Kagome lattice can host abundant exotic quantum states such as superconductivity and charge density wave (CDW). Recently, successive orders of A-type antiferromagnetism (AFM), CDW and canted AFM have been manifested upon cooling in kagome FeGe. However, the mechanism of CDW and interaction with magnetism remains unclear. Here we investigate the evolution of CDW with temperature across the canted AFM by single-crystal x-ray diffraction, scanning tunneling microscope (STM) and resonant elastic x-ray scattering (REXS). Interestingly, CDW-induced superlattice reflections become weak after the canted AFM, although long-range CDW order is still detectable by STM and REXS. We uncover a novel long-range CDW order with suppressed structural modulation, likely due to the competition for the underlying crystal structure between CDW and canted AFM. Additionally, occupational modulations of Ge1 in the kagome plane and displacive modulations of all atoms were extracted. The results confirm Ge dimerization along the c axis and suggest a dynamic transformation between different CDW domains.

cond-mat.str-el

Non-centrosymmetric, transverse structural modulation in SrAl4, and elucidation of its origin in the BaAl4 family of compounds

At ambient conditions SrAl4 adopts the BaAl4 structure type with space group I4/mmm. It undergoes a charge-density-wave (CDW) transition at TCDW = 243 K, followed by a structural transition at TS = 87 K. Temperature-dependent single-crystal X-ray diffraction (SXRD) leads to the observation of incommensurate superlattice reflections at q = σc* with σ= 0.1116 at 200 K. The CDW has orthorhombic symmetry with the acentric superspace group F222(00sigma)00s, where F222 is a subgroup of Fmmm as well as of I4/mmm. Atomic displacements mainly represent a transverse wave, with displacements that are 90 deg out of phase between the two diagonal directions of the I-centered unit cell, resulting in a helical wave. Small longitudinal displacements are provided by the second harmonic modulation. The orthorhombic phase realized in SrAl4 is similar to that found in EuAl4. Electronic structure calculations and phonon calculations by density functional theory (DFT) have failed to reveal the mechanism of CDW formation. However, DFT reveals that Al atoms dominate the density of states near the Fermi level, thus, corroborating the SXRD measurements. SrAl4 remains incommensurately modulated at the structural transition, where the symmetry lowers from orthorhombic to b-unique monoclinic. We have identified a simple criterion, that correlates the presence of a phase transition with the interatomic distances. Only those compounds XAl4-xGax(X = Ba, Eu, Sr, Ca; 0 < x <4) undergo phase transitions, for which the ratio c/a falls within the narrow range 2.51 < c/a < 2.54.

cond-mat.str-el

Structural correlation to enhanced magnetodielectric properties of Pr-doped polycrystalline Gd$_{0.55}$Pr$_{0.45}$MnO$_3$ at low temperatures

The effect of improved dielectric properties in the presence of an applied magnetic field is discussed in Pr doped polycrystalline Gd$_{0.55}$Pr$_{0.45}$MnO$_3$ complemented by the structural properties down to 50 K and magnetic properties. Enhanced dielectric permittivity and low dielectric loss represent the strongly field-dependent dielectric behaviour of the sample. The structural characterizations using synchrotron angle dispersive X-ray diffraction confirm the orthorhombic symmetry of the polycrystalline sample with the Pnma space group from 300 K to 50 K. There is no structural transition at lower temperatures up to 50 K; however the Mn O octahedral distortion is reduced. The investigation of dielectric properties for frequencies range 500 Hz to 1 MHz was conducted in the temperature range 8 K to 300 K with and without a magnetic field of 7 Tesla, which shows the high dielectric constant in the 500 Hz frequency region. This confirms the relaxation phenomena in polycrystalline Gd$_{0.55}$Pr$_{0.45}$MnO$_3$. ac conductivity data shows the increasing trend for frequencies along with the activation energy which increases from low frequencies to higher frequencies. Temperature-dependent dc magnetization study shows the negative magnetization in polycrystalline Gd$_{0.55}$Pr$_{0.45}$MnO$_3$ at low temperature at 100 Oe applied field, due to spin canting of Mn-Mn magnetic lattice. High coercivity due to competition in between spin ordering of Mn and Gd,Pr magnetic lattice at 5 K are also observed in the field-dependent magnetization study.

cond-mat.str-el

Evolution from sinusoidal to collinear A-type antiferromagnetic spin-ordered magnetic phase transition in Tb0.6Pr0.4MnO3

The present study reports on the structural and magnetic phase transitions in Pr-doped polycrystalline Tb0.6Pr0.4MnO3, using high-resolution neutron powder diffraction (NPD) collected at SINQ spallation source (PSI), to emphasize the suppression of the sinusoidal magnetic structure of pure TbMnO3 and the evolution to a collinear A-type antiferromagnetic ordering. The phase purity, Jahn-Teller distortion, and one-electron bandwidth for eg orbital of Mn3+ cation have been calculated for polycrystalline Tb0.6Pr0.4MnO3, in comparison to the parent materials TbMnO3 and PrMnO3, through the Rietveld refinement study from X-ray diffraction data at room temperature. The temperature-dependent zero field-cooled and field-cooled dc magnetization study at low temperature down to 5 K reveals a variation in the magnetic phase transition due to the effect of Pr3+ substitution at the Tb3+ site, which gives the signature of the antiferromagnetic nature of the sample, with a weak ferromagnetic component at low temperature induced by an external magnetic field. The field-dependent magnetization study at low temperatures gives the weak coercivity having the order of 2 kOe, which is expected due to canted-spin arrangement or ferromagnetic nature of Terbium ordering. The NPD data for Tb0.6Pr0.4MnO3 confirms that the nuclear structure of the synthesized sample maintains its orthorhombic symmetry down to 1.5 K. Also, the magnetic structures have been solved at 50 K, 25 K, and 1.5 K through the NPD study, which shows A-type antiferromagnetic spin arrangement.

cond-mat.mtrl-sci

Negative Capacitance Enables FinFET Scaling Beyond 3nm Node

A comprehensive study of the scaling of negative capacitance FinFET (NC-FinFET) is conducted with TCAD. We show that the NC-FinFET can be scaled to "2.1nm node" and almost "1.5nm node" that comes two nodes after the industry "3nm node," which has 16nm Lg and is the last FinFET node according to the International Roadmap for Devices and Systems (IRDS). In addition, for the intervening nodes, NC-FinFET can meet IRDS Ion and Ioff target at target-beating VDD. The benefits of negative capacitance (NC) include improved subthreshold slope (SS), drain-induced barrier lowering (DIBL), Vt roll-off, transconductance over Id (Gm/Id), output conductance over Id (Gd/Id), and lower VDD. Further scaling may be achieved by improving capacitance matching between ferroelectric (FE) and dielectric (DE).

physics.app-ph