arXiv subjects

Hartmut Bracht

Publications and source records attributed to Hartmut Bracht.

6 recordsLinked to original sources

arXiv2024

Optimizing ToF-SIMS Depth Profiles of Semiconductor Heterostructures

The continuous technological development of electronic devices and the introduction of new materials leads to ever greater demands on the fabrication of semiconductor heterostructures and their characterization. This work focuses on optimizing Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) depth profiles of semiconductor heterostructures aiming at a minimization of measurement-induced profile broadening. As model system, a state-of-the-art Molecular Beam Epitaxy (MBE) grown multilayer homostructure consisting of $^{\textit{nat}}$Si/$^{28}$Si bilayers with only 2 nm in thickness is investigated while varying the most relevant sputter parameters. Atomic concentration-depth profiles are determined and an error function based description model is used to quantify layer thicknesses as well as profile broadening. The optimization process leads to an excellent resolution of the multilayer homostructure. The results of this optimization guide to a ToF-SIMS analysis of another MBE grown heterostructure consisting of a strained and highly purified $^{28}$Si layer sandwiched between two Si$_{0.7}$Ge$_{0.3}$ layers. The sandwiched $^{28}$Si layer represents a quantum well that has proven to be an excellent host for the implementation of electron-spin qubits.

physics.app-ph↗

arXiv2024

Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells

Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope composition depth profiles in a SiGe/$^{28}$Si/SiGe heterostructure are analyzed with atom probe tomography (APT) and time-of-flight secondary-ion mass spectrometry. Spin-echo dephasing times $T_2^{echo}=128 μs$ and valley energy splittings around $200 μeV$ have been observed for single spin qubits in this quantum well (QW) heterostructure, pointing towards the suppression of qubit decoherence through hyperfine interaction or via scattering between valley states. The concentration of nuclear spin-carrying $^{29}$Si is 50 ppm in the $^{28}$Si QW. APT allows to uncover that both the top SiGe/$^{28}$Si and the bottom $^{28}$Si/SiGe interfaces of the QW are shaped by epitaxial growth front segregation signatures on a few monolayer scale. A subsequent thermal treatment broadens the top interface by about two monolayers, while the width of the bottom interface remains unchanged. Using a tight-binding model including SiGe alloy disorder, these experimental results suggest that the combination of the slightly thermally broadened top interface and of a minimal Ge concentration of $0.3 \%$ in the QW, resulting from segregation, is instrumental for the observed large valley splitting. Minimal Ge additions $< 1 \%$, which get more likely in thin QWs, will hence support high valley splitting without compromising coherence times. At the same time, taking thermal treatments during device processing as well as the occurrence of crystal growth characteristics into account seems important for the design of reproducible qubit properties.

cond-mat.mes-hall↗

arXiv2022

Atomic mechanisms of self-diffusion in amorphous silicon

Based on recent calculations of the self-diffusion (SD) coefficient in amorphous silicon (a-Si) by classical Molecular Dynamics simulation [M. Posselt, H. Bracht, and D. Radić, J. Appl. Phys. 131, 035102 (2022)] detailed investigations on atomic mechanisms are performed. For this purpose two Stillinger-Weber-type potentials are employed, one strongly overestimates the SD coefficient, while the other leads to values much closer to the experimental data. By taking into account the individual squared displacements (or diffusion lengths) of atoms the diffusional and vibrational contributions to the total mean squared displacement can be determined separately. It is shown that the diffusional part is not directly correlated with the concentration of coordination defects. The time-dependent distribution of squared displacements of atoms indicates that in a-Si a well-defined elemental diffusion length does not exist, in contrast to SD in the crystalline Si. The analysis of atoms with large squared displacements reveals that the mechanisms of SD in a-Si are characterized by complex rearrangements of bonds or exchange of neighbors. These are mono- and bi-directional exchanges of neighbors and neighbor replacements. Exchanges or replacements may concern up to three neighbors and may occur in relatively short periods of some ps. Bi- or mono-directional exchange or replacement of one neighbor atom happen more frequently than processes including more neighbors. A comparison of results for the two interatomic potentials shows that an increased three-body parameter only slows down the migration, but does not change the migration mechanisms fundamentally.

cond-mat.mtrl-sci↗

arXiv2021

Tracing boron diffusion into a textured silicon solar cell using electron beam induced current in a scanning transmission electron microscope

The light absorption of [001] grown single-crystalline silicon wafers can be enhanced by chemical etching, e.g., with potassium hydroxide, resulting in a pyramid-like surface texture. Alongside advantageous photon harvesting in solar cells, the surface roughness leads to drawbacks when measuring diffusion behaviour of dopants in the heterogeneous structure. In this paper, we employ experimental and simulated scanning transmission electron beam induced current in combination with simulation of boron diffusion in a self-consistent framework to trace the dopant distribution underneath the pyramid-like surface texture. In order to account for surface recombination, an effective model projecting the system along the electron beam propagation direction is used in the EBIC simulation enabling a comparison to entire two-dimensional experimental maps. We find a good agreement between simulated and experimental data and thoroughly discuss how EBIC can be used in future experiments to quantify weak electric fields.

physics.app-ph↗

arXiv2020

Dissolution of donor-vacancy clusters in heavily doped n-type germanium

The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4V cluster dissolution increases the carrier concentration by more than three-fold together with a suppression of phosphorus diffusion. Electrochemical capacitance-voltage measurements in conjunction with secondary ion mass spectrometry, positron annihilation lifetime spectroscopy and theoretical calculations enabled us to address and understand a fundamental problem that has hindered so far the full integration of Ge with complementary-metal-oxide-semiconductor technology.

cond-mat.mtrl-sci↗

arXiv2004

Nanoscopic Study of the Ion Dynamics in a LiAlSiO$_4$ Glass Ceramic by means of Electrostatic Force Spectroscopy

We use time-domain electrostatic force spectroscopy (TD-EFS) for characterising the dynamics of mobile ions in a partially crystallised LiAlSiO$_4$ glass ceramic, and we compare the results of the TD-EFS measurements to macroscopic electrical conductivity measurements. While the macroscopic conductivity spectra are determined by a single dynamic process with an activation energy of 0.72 eV, the TD-EFS measurements provide information about two distinct relaxation processes with different activation energies. Our results indicate that the faster process is due to ionic movements in the glassy phase and at the glass-crystal interfaces, while the slower process is caused by ionic movements in the crystallites. The spatially varying electrical relaxation strengths of the fast and of the slow process provide information about the nano- and mesoscale structure of the glass ceramic.

cond-mat.mtrl-sci↗